arXiv subjects

Se-Young Jeong

Publications and source records attributed to Se-Young Jeong.

5 recordsLinked to original sources

arXiv2026

Ballistic transport in nanodevices based on single-crystalline Cu thin film

In ballistic transport, the movement of charged carriers is essentially unimpeded by scattering events. In this limit, microscopic parameters such as crystal momentum, spin and quantum phases are well conserved, allowing electrons to maintain their quantum coherence over longer distances. Nanoscale materials, like carbon nanotubes, graphene, and nanowires, exhibit ballistic transport. However, their scalability in devices is significantly limited. While deposited metal films offer excellent scalability for nanodevices, achieving ballistic transport in these films poses a challenge due to their short electronic mean free path. Here, we investigated the electronic transport in cross-geometry devices fabricated with 90 nm-thick copper films without grain boundaries. We observed ballistic transport in devices with channel width smaller than 150 nm below 85 K by measuring negative bend resistance. Our findings would open the opportunity for probing intrinsic quantum properties of Cu, and for realizing scalable low-loss signal transmission and high-quality interconnects in semiconductor devices.

cond-mat.mes-hall↗

arXiv2025

Beyond Seamless: Unexpected Defective Merging in Single-Orientation Graphene

Single-orientation stitching of graphene has emerged as the predominant method for growth of large-area, high-quality graphene films. Particularly noteworthy is graphene grown on single-crystalline Cu(111)/sapphire substrates, which exhibits exceptionally planar oriented stitching due to the atomically smooth substrate, facilitating the formation of continuous, high-quality graphene monolayer. These single-orientation stitches have conventionally been regarded as seamless with negligible defect concentrations. In this report, we present experimental observations regarding graphene grown on single-crystalline Cu(111)/sapphire substrates. Among the graphene flakes with single-orientation, our findings reveal two major merging behaviors: one producing the expected seamless stitching, and another unexpectedly generating structural defects that create nanoscale pathways permitting water permeation. Notably, we identify a unique merging structure--overlapped junction, in which the edge of one graphene flake overlaps and lies atop the edge of another flake, rather than forming a continuous atomic stitch. This discovery challenges the conventional anticipation of single-orientation stitched graphene films as seamless single crystalline film, while offers unique perspective for graphene applications in molecular sieving, selective filtration membranes, and protective coatings.

cond-mat.mtrl-sci↗

arXiv2025

Stray light in 3D porous nanostructures of single crystalline copper film

In the design of optical devices and components, geometric structures and optical properties of materials, such as absorption, refraction, reflection, diffraction, scattering, and trapping, have been utilized. Finding the ideal material with certain optical and geometric characteristics is essential for a customized application. Here, we fabricated unoxidizable achromatic copper films (ACFs) on Al2O3 substrates utilizing an atomic sputtering epitaxy apparatus. ACFs are made up of two regions vertically: a comparatively flat layer region and a three-dimensional (3D) porous nanostructured region on top of the flat region. The measured specular reflectance displayed low-pass filter behaviour with a sharp cutoff frequency in the infrared spectrum. Furthermore, the measured diffusive reflectance spectra showed light-trapping behaviour in the spectral region above the cutoff frequency, where there are no known absorption mechanisms, such as phonons and interband transitions. A focused ion beam scanning electron microscope was utilized to study the thin film's nanostructured region through 3D tomographic analysis in order to comprehend the phenomena that were observed. This work will shed fresh light on the design and optimization of optical filters and light-trapping employing porous nanostructured metallic thin films.

physics.optics↗

arXiv2022

Preparation of large Cu3Sn single crystal by Czochralski method

Cu3Sn was recently predicted to host topological Dirac fermions, but related research is still in its infancy. The growth of large and high-quality Cu3Sn single crystals is, therefore, highly desired to investigate the possible topological properties. In this work, we report the single crystal growth of Cu3Sn by Czochralski (CZ) method. Crystal structure, chemical composition, and transport properties of Cu3Sn single crystals were analyzed to verify the crystal quality. Notably, compared to the mm-sized crystals from a molten Sn-flux, the cm-sized crystals obtained by the CZ method are free from contamination from flux materials, paving the way for the follow-up works.

cond-mat.mtrl-sci↗

arXiv2021

Color of Copper/Copper oxide

Stochastic inhomogeneous oxidation is an inherent characteristic of copper (Cu), often hindering color tuning and bandgap engineering of oxides. Coherent control of the interface between metal and metal oxide remains unresolved. We demonstrate coherent propagation of an oxidation front in single-crystal Cu thin film to achieve a full-color spectrum for Cu by precisely controlling its oxide-layer thickness. Grain boundary-free and atomically flat films prepared by atomic-sputtering epitaxy allow tailoring of the oxide layer with an abrupt interface via heat treatment with a suppressed temperature gradient. Color tuning of nearly full-color RGB indices is realized by precise control of oxide-layer thickness; our samples covered ~50.4% of the sRGB color space. The color of copper/copper oxide is realized by the reconstruction of the quantitative yield color from oxide pigment (complex dielectric functions of Cu2O) and light-layer interference (reflectance spectra obtained from the Fresnel equations) to produce structural color. We further demonstrate laser-oxide lithography with micron-scale linewidth and depth through local phase transformation to oxides embedded in the metal, providing spacing necessary for semiconducting transport and optoelectronics functionality.

cond-mat.mtrl-sci↗