arXiv subjects

Sebastian Beckert

Publications and source records attributed to Sebastian Beckert.

12 recordsLinked to original sources

arXiv2025

Direct demonstration of time-reversal-symmetry-breaking spin injection from a compensated magnet

The injection, propagation and detection of spin currents are essential physical processes in spintronics. So far, the separation of charge and spin currents was facilitated by the electrical spin injection from a ferromagnet (FM) or the injection by a relativistic spin Hall effect. The devices employed are lateral spin valves comprising spatially separated injection and detection electrodes, connected by a spin-propagation channel. The time-reversal symmetry (TRS) breaking FM spin injection is realized in a geometry with an electrical bias applied between the injection electrode and the channel and is modelled by a conserved spin-polarized drift current. In contrast, the spin injection by the T-symmetric relativistic spin Hall mechanism is driven by an electrical bias applied across the injection electrode alone, and is modelled by a non-conserved spin current transverse to the applied bias. In this work, we use a lateral spin valve with a Mn5Si3 injection electrode to directly demonstrate a TRS-breaking spin injection from a compensated magnet with a vanishing net magnetization. Specifically, the TRS-breaking is demonstrated by the fact that switching between time-reversed states of the compensated magnet changes the detected spin signal. Moreover, the TRS-breaking nature of the spin injection is observed in both experimental geometries with the different electrical biasing, while using the same detection electrode. We show that this unconventional spin-injection is consistent with different magnitudes and propagation angles of electrical currents in the spin-up and spin-down channel in a d-wave altermagnet. Here our symmetry analysis and first-principles calculations are based on the compensated collinear altermagnetic order which has provided a comprehensive microscopic interpretation of earlier structural, magnetic, and anomalous Hall and Nernst measurements in Mn5Si3 thin films.

cond-mat.mes-hall↗

arXiv2025

STEM EBIC as a Quantitative Probe of Semiconductor Devices

Electron beam-induced current (EBIC) imaging in the scanning transmission electron microscope (STEM), STEM-EBIC, provides direct access to carrier transport at the nanoscale. While well established in bulk SEM geometries, its application to thin TEM lamellae remains largely unexplored. Here, we present a systematic STEM-EBIC study of silicon photodiode lamellae prepared by gallium and xenon focused ion beam (FIB) milling. We directly visualize the p-n junctions in thin cross sections and extract effective diffusion lengths for electrons and holes as a function of local thickness. The values are orders of magnitude smaller than those obtained by SEM-EBIC on bulk silicon, reflecting pronounced surface recombination and FIB-induced surface modifications. Current-voltage measurements further reveal severe deviations from the expected diode-like behavior, which we attribute to ohmic metal-semiconductor contacts in the emasurement setup. Our analysis establishes STEM-EBIC as a quantitative probe of carrier transport in nanoscale devices.

cond-mat.mes-hall↗

arXiv2025

Magnetic aftereffect and Barkhausen effect in thin films of the altermagnetic candidate Mn5Si3

Altermagnetism as a third distinct type of collinear magnetic ordering lately attracts vivid attention. We here study the Hall effect response of micron-scale Hall bars patterned into Mn5Si3 thin films, an altermagnet candidate material. Recording transport data as a function of time, at fixed magnetic field magnitude, we observe a time-dependent relaxation of the Hall voltage qualitatively and quantitatively similar to the magnetic viscosity response well established in ferromagnetic films. In addition, the Hall voltage time traces feature clear unilateral steps, which we interpret as Barkhausen steps, i.e., as experimental evidence for abrupt reorientations of magnetic (Hall vector) domains in the altermagnetic candidate material. A quantitative analysis yields a Barkhausen length of around 18nm in the Hall bar devices with the smallest width of 100 nm.

cond-mat.mtrl-sci↗

arXiv2024

Altermagnetic variants in thin films of Mn5Si3

The altermagnet candidate Mn5Si3 has attracted wide attention in the context of non-relativistic spin physics, due to its composition of light elements. However, the presumed structure of the altermagnetic phase had yet to be demonstrated. In this study, we demonstrate a hallmark of altermagnetism in Mn5Si3 thin films, namely the three options, or variants, for the checkerboard distribution of the magnetic Mn atoms. The magnetic symmetries were altered by field-rotation of the N\'eel vector along relevant crystal directions, resulting in anomalous Hall effect anisotropy. The experimental results in nanoscale devices were corroborated by a theoretical model involving atomic site dependent anisotropy and bulk Dzyaloshinskii-Moriya interaction for a single variant.

cond-mat.mes-hall↗

arXiv2024

In-situ monitoring the magnetotransport signature of topological transitions in the chiral magnet Mn$_{1.4}$PtSn

Emerging magnetic fields related to the presence of topologically protected spin textures such as skyrmions are expected to give rise to additional, topology-related contributions to the Hall effect. In order to doubtlessly identify this so-called topological Hall effect, it is crucial to disentangle such contributions from the anomalous Hall effect. This necessitates a direct correlation of the transversal Hall voltage with the underlying magnetic textures. We utilize a novel measurement platform that allows to acquire high-resolution Lorentz transmission electron microscopy images of magnetic textures as a function of an external magnetic field and to concurrently measure the (anomalous) Hall voltage in-situ in the microscope on one and the same specimen. We use this approach to investigate the transport signatures of the chiral soliton lattice and antiskyrmions in Mn$_{1.4}$PtSn. Notably, the observed textures allow to fully understand the measured Hall voltage without the need of any additional contributions due to a topological Hall effect, and the field-controlled formation and annihilation of anstiskyrmions are found to have no effect on the measurend Hall voltage.

cond-mat.mes-hall↗

arXiv2024

Detecting slow magnetization relaxation via magnetotransport measurements based on the current-reversal method

Slow magnetization relaxation processes are an important time-dependent property of many magnetic materials. We show that magnetotransport measurements based on a well-established current-reversal method can be utilized to implement a simple and robust screening scheme for such relaxation processes. We demonstrate our approach considering the anomalous Hall effect in a Pt/Co/AlOx trilayer model system, and then explore relaxation in {\tau} -MnAl films. Compared to magnetotransport experiments based on ac lock-in techniques, we find that the dc current-reversal method is particulary sensitive to relaxation processes with relaxation time scales on the order of seconds, comparable to the current-reversal measurement time scales.

cond-mat.mtrl-sci↗

arXiv2024

Anisotropy of the anomalous Hall effect in the altermagnet candidate Mn$_5$Si$_3$ films

Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rotations, which results in an unconventional spin-polarized band structure in the momentum space. This low symmetry of the crystal structure is expected to be reflected in the anisotropy of the anomalous Hall effect. In this work, we study the anisotropy of the anomalous Hall effect in epitaxial thin films of Mn$_5$Si$_3$, an altermagnetic candidate material. We first demonstrate a change in the relative N\'eel vector orientation when rotating the external field orientation through systematic changes in both the anomalous Hall effect and the anisotropic longitudinal magnetoresistance. We then show that the anomalous Hall effect in this material is anisotropic with the N\'eel vector orientation relative to the crystal structure and that this anisotropy requires high crystal quality and unlikely correlates with the magnetocrystalline anisotropy. Our results provide further systematic support to the case for considering epitaxial thin films of Mn$_5$Si$_3$ as an altermagnetic candidate material.

cond-mat.mes-hall↗

arXiv2023

Even-in-magnetic field part of transverse resistivity as a probe of magnetic transitions

The component of the resistivity tensor $\rho_{ij}$ corresponding to voltage transverse to both an applied current and a magnetic field can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effect. The latter is often ascribed to experimental artefacts and ignored. Here, we show that upon suppressing these artefacts in carefully controlled experiments, useful information remains. We first investigate the well-explored ferromagnet CoFeB, where the even part of $\rho_{yx}$ contains a contribution from the anisotropic magnetoresistance, which we confirm by Stoner--Wohlfarth modelling. We then apply our approach to magnetotransport measurements of $\rm Mn_5Si_3$ thin films, which undergo a transition from non-collinear to an altermagnetic collinear state. In this material, the even part of the transverse signal is sizable only in the low-spin-symmetry phase below $\approx 80$~K. Transverse resistivity measurements thus offer a simple and readily available probe of magnetic order transitions.

cond-mat.mes-hall↗

arXiv2023

Anomalous Nernst effect in perpendicularly magnetised {\tau}-MnAl thin films

$\tau$-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here we report on the anomalous Nernst effect of sputter deposited $\tau$-MnAl thin films. We demonstrate a robust anomalous Nernst effect at temperatures of 200 K and 300 K with a hysteresis similar to the anomalous Hall effect and the magnetisation of the material. The anomalous Nernst coefficient of (0.6$\pm$0.24) $\mu$V/K at 300 K is comparable to other perpendicular magnetic anisotropy thin films. Therefore $\tau$-MnAl is a promising candidate for spin-caloritronic research.

cond-mat.mtrl-sci↗

arXiv2023

Probing magnetic properties at the nanoscale: In-situ Hall measurements in a TEM

We report on advanced in-situ magneto-transport measurements in a transmission electron microscope. The approach allows for concurrent magnetic imaging and high resolution structural and chemical characterization of the same sample. Proof-of-principle in-situ Hall measurements on presumably undemanding nickel thin films supported by micromagnetic simulations reveal that in samples with non-trivial structures and/or compositions, detailed knowledge of the latter is indispensable for a thorough understanding and reliable interpretation of the magneto-transport data. The proposed in-situ approach is thus expected to contribute to a better understanding of the Hall signatures in more complex magnetic textures.

cond-mat.other↗

arXiv2022

Anomalous Nernst effect in Mn$_3$NiN thin films

The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect and its magnitude in this class of materials are, however, very limited. This scarcity may be partly due to the experimental difficulty of reliably quantifying the anomalous Nernst coefficient. Here, we report experiments on the anomalous Nernst effect in antiferromagnetic antiperovskite Mn$_3$NiN thin films. Measurement of both the anomalous Hall and Nernst effects using the same sample and measurement geometry makes it possible to directly compare these two effects and quantify the anomalous Nernst coefficient and conductivity in Mn$_3$NiN. We carefully evaluate the spatial distribution of the thermal gradient in the sample and use finite element modeling to corroborate our experimental results.

cond-mat.mtrl-sci↗

arXiv2018

Large anomalous Nernst effect in thin films of the Weyl semimetal Co2MnGa

The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co$_2$MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co$_2$MnGa strongly varies with temperature. We exploit the on-chip thermometry technique to quantify the thermal gradient, which enables us to directly evaluate the anomalous Nernst coefficient. We compare these results to a reference CoFeB thin film. We show that the 50-nm-thick Co$_2$MnGa films exhibit a large anomalous Nernst effect of -2$\mu$V/K at 300 K, whereas the 10-nm-thick Co$_2$MnGa film exhibits a significantly smaller anomalous Nernst coefficient despite having similar volume magnetizations. These findings suggest that the microscopic origin of the anomalous Nernst effect in Co$_2$MnGa is complex and may contain contributions from skew-scattering, side-jump or intrinsic Berry phase. In any case, the large anomalous Nernst coefficent of Co$_2$MnGa thin films at room temperature makes this material system a very promising candidate for efficient spin-caloritronic devices.

cond-mat.mes-hall↗