arXiv subjects

Sebastian Randel

Publications and source records attributed to Sebastian Randel.

At least 37 records · Page 2Linked to original sources

arXiv2022

3D-printed facet-attached optical elements for connecting VCSEL and photodiodes to fiber arrays and multi-core fibers

Multicore optical fibers and ribbons based on fiber arrays allow for massively parallel transmission of signals via spatially separated channels, thereby offering attractive bandwidth scaling with linearly increasing technical effort. However, low-loss coupling of light between fiber arrays or multicore fibers and standard linear arrays of vertical-cavity surface-emitting lasers (VCSEL) or photodiodes (PD) still represents a challenge. In this paper, we demonstrate that 3D-printed facet-attached microlenses (FaML) offer an attractive path for connecting multimode fiber arrays as well as individual cores of multimode multicore fibers to standard arrays of VCSEL or PD. The freeform coupling elements are printed in situ with high precision on the device and fiber facets by high-resolution multi-photon lithography. We demonstrate coupling losses down to 0.35 dB along with lateral 1 dB alignment tolerances in excess of 10 $μ$m, allowing to leverage fast passive assembly techniques that rely on industry-standard machine vision. To the best of our knowledge, our experiments represent the first demonstration of a coupling interface that connects individual cores of a multicore fiber to VCSEL or PD arranged in a standard linear array without the need for additional fiber-based or waveguide-based fan-out structures. Using this approach, we build a 3 x 25 Gbit/s transceiver assembly which fits into a small form-factor pluggable module and which fulfills many performance metrics specified in the IEEE 802.3 standard.

physics.optics↗

arXiv2021

Ultra-broadband polarization beam splitter and rotator based on 3D-printed waveguides

Multi-photon lithography has emerged as a powerful tool for photonic integration, allowing to complement planar photonic circuits by 3D-printed freeform structures such as waveguides or micro-optical elements. These structures can be fabricated with high precision on the facets of optical devices and lend themselves to highly efficient package-level chip-chip-connections in photonic assemblies. However, plain light transport and efficient coupling is far from exploiting the full geometrical design freedom that is offered by 3D laser lithography. Here, we extend the functionality of 3D-printed optical structures to manipulation of optical polarization states. We demonstrate compact ultra-broadband polarization beam splitters (PBS) that can be combined with polarization rotators (PR) and mode-field adapters into a monolithic 3D-printed structure, fabricated directly on the facets of optical devices. In a proof-of-concept experiment, we demonstrate measured polarization extinction ratios beyond 11 dB over a bandwidth of 350 nm at near-infrared (NIR) telecommunication wavelengths around 1550 nm. We demonstrate the viability of the device by receiving a 640 Gbit/s dual-polarization data signal using 16-state quadrature amplitude modulation (16QAM), without any measurable optical-signal-to-noise-ratio (OSNR) penalty compared to a commercial PBS.

physics.optics↗

arXiv2020

Hybrid Electro-Optic Modulator Combining Silicon Photonic Slot Waveguides with High-k Radio-Frequency Slotlines

Electro-optic (EO) modulators rely on interaction of optical and electrical signals with second-order nonlinear media. For the optical signal, this interaction can be strongly enhanced by using dielectric slot-waveguide structures that exploit a field discontinuity at the interface between a high-index waveguide core and the low-index EO cladding. In contrast to this, the electrical signal is usually applied through conductive regions in the direct vicinity of the optical waveguide. To avoid excessive optical loss, the conductivity of these regions is maintained at a moderate level, thus leading to inherent RC-limitations of the modulation bandwidth. In this paper, we show that these limitations can be overcome by extending the slot-waveguide concept to the modulating radio-frequency (RF) signal. Our device combines an RF slotline that relies on BaTiO3 as a high-k dielectric material with a conventional silicon photonic slot waveguide and a highly efficient organic EO cladding material. In a proof-of-concept experiment, we demonstrate a 1 mm-long Mach-Zehnder modulator that offers a 3 dB-bandwidth of 76 GHz and a 6 dB-bandwidth of 110 GHz along with a small π-voltage of 1.3 V (UπL = 1.3 V mm). To the best of our knowledge, this represents the largest EO bandwidth so far achieved with a silicon photonic modulator based on dielectric waveguides. We further demonstrate the viability of the device in a data transmission experiment using four-state pulse-amplitude modulation (PAM4) at line rates up to 200 Gbit/s. Our first-generation devices leave vast room for further improvement and may open an attractive route towards highly efficient silicon photonic modulators that combine sub-1 mm device lengths with sub-1 V drive voltages and modulation bandwidths of more than 100 GHz.

physics.app-ph↗

arXiv2020

Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulators for 100 GBd PAM4 Signaling With Sub-1 dB Phase-Shifter Loss

We report on compact and efficient silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) with low phase shifter insertion loss of 0.7 dB. The 280 $μ$m-long phase shifters feature a $π$-voltage-length product of 0.41 Vmm and a loss-efficiency product as small as $aU_πL = 1.0\space\rm{VdB}$. The device performance is demonstrated in a data transmission experiment, where we generate on-off-keying (OOK) and four-level pulse-amplitude modulation (PAM4) signals at symbol rates of 100 GBd, resulting in line rates of up to 200 Gbit/s. Bit error ratios are below the threshold for hard-decision forward error correction (HD-FEC) with 7 % coding overhead, leading to net data rates of 187 Gbit/s. This is the highest PAM4 data rate ever achieved for a sub-1 mm silicon photonic MZM.

physics.app-ph↗

arXiv2019

Hardwire-Configurable Photonic Integrated Circuits Enabled by 3D Nano-Printing

Photonic integrated circuits (PIC) currently rely on application-specific designs that are geared towards a particular functionality. Development of such application-specific PIC requires considerable effort and often involves several design, fabrication, and characterization iterations, each with cycle times of several months, to reach acceptable performance. At the same time, the number of chips that is eventually needed to serve a certain application is often too small to benefit from the scalability of advanced photonic integration platforms. As a consequence, large-scale photonic integration has hitherto been unable to unfold its full economic advantages within the highly fragmented application space of photonics. Here we introduce a novel approach to configurable PIC that can overcome these challenges. The concept exploits generic PIC designs consisting of standard building blocks that can be concatenated to provide an application-specific functionality. Configuration of the PIC relies on establishing hardwired optical connections between suitable ports of an optical wire board using highly flexible 3D direct-write laser lithography. Hardwire-configurable PIC allow to exploit high-throughput production of generic chips in large-scale fabrication facilities for serving a wide variety of applications with small or medium volumes of specifically configured devices.

physics.app-ph↗

arXiv2019

A verified equivalent-circuit model for slotwaveguide modulators

We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travellingwave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF transmission characteristics. We experimentally verify the validity of our model, and we formulate design guidelines for an optimum trade-off between optical loss due to free-carrier absorption (FCA), electro-optic bandwidth, and π-voltage of SOH slot-waveguide modulators.

physics.app-ph↗

arXiv2019

Coherent WDM transmission using quantum-dash mode-locked laser diodes as multi-wavelength source and local oscillator

Quantum-dash (QD) mode-locked laser diodes (MLLD) lend themselves as chip-scale frequency comb generators for highly scalable wavelength-division multiplexing (WDM) links in future data-center, campus-area, or metropolitan networks. Driven by a simple DC current, the devices generate flat broadband frequency combs, containing tens of equidistant optical tones with line spacings of tens of GHz. Here we show that QD-MLLDs can not only be used as multi-wavelength light sources at a WDM transmitter, but also as multi-wavelength local oscillators (LO) for parallel coherent reception. In our experiments, we demonstrate transmission of an aggregate data rate of 4.1 Tbit/s (23x45 GBd PDM-QPSK) over 75 km standard single-mode fiber (SSMF). To the best of our knowledge, this represents the first demonstration of a coherent WDM link that relies on QD-MLLD both at the transmitter and the receiver.

physics.app-ph↗

arXiv2019

Electrically packaged silicon-organic hybrid (SOH) I/Q-modulator for 64 GBd operation

Silicon-organic hybrid (SOH) electro-optic (EO) modulators combine small footprint with low operating voltage and hence low power dissipation, thus lending themselves to on-chip integration of large-scale device arrays. Here we demonstrate an electrical packaging concept that enables high-density radio-frequency (RF) interfaces between on-chip SOH devices and external circuits. The concept combines high-resolution $\mathrm{Al_2O_3}$ printed-circuit boards with technically simple metal wire bonds and is amenable to packaging of device arrays with small on-chip bond pad pitches. In a set of experiments, we characterize the performance of the underlying RF building blocks and we demonstrate the viability of the overall concept by generation of high-speed optical communication signals. Achieving line rates (symbols rates) of 128 Gbit/s (64 GBd) using quadrature-phase-shiftkeying (QPSK) modulation and of 160 Gbit/s (40 GBd) using 16-state quadrature-amplitudemodulation (16QAM), we believe that our demonstration represents an important step in bringing SOH modulators from proof-of-concept experiments to deployment in commercial environments.

physics.app-ph↗

arXiv2019

Generalized Kramers-Kronig Receiver for Coherent THz Communications

High-speed communication systems rely on spectrally efficient modulation formats that encode information both on the amplitude and on the phase of an electromagnetic carrier. Coherent detection of such signals typically uses rather complex receiver schemes, requiring a continuous-wave (c.w.) local oscillator (LO) as a phase reference and a mixer circuit for spectral down-conversion. In optical communications, the so-called Kramers-Kronig (KK) scheme has been demonstrated to greatly simplify the receiver, reducing the hardware to a single photodiode. In this approach, an LO tone is transmitted along with the signal, and the amplitude and phase of the complex signal envelope are reconstructed from the photocurrent by digital signal processing. This reconstruction exploits the fact that the real and the imaginary part, or, equivalently, the amplitude and the phase of an analytic signal are connected by a KK-type relation. Here, we transfer the KK scheme to high-speed wireless communications at THz carrier frequencies. We use a Schottky-barrier diode (SBD) as a nonlinear element and generalize the theory of KK processing to account for the non-quadratic characteristics of this device. Using 16-state quadrature amplitude modulation (16QAM), we transmit a net data rate of 115 Gbit/s at a carrier frequency of 0.3 THz over a distance of 110 m.

physics.app-ph↗

arXiv2019

OSNR limitations of chip-based optical frequency comb sources for WDM coherent communications

Optical frequency combs have the potential to become key building blocks of optical communication subsystems. The strictly equidistant, narrow-band spectral lines of a frequency comb can serve both as carriers for massively parallel data transmission and as local oscillator for coherent reception. Recent experiments have demonstrated the viability of various chip-based comb generator concepts for communication applications, offering transmission capacities of tens of Tbit/s. Here, we investigate the influence of the comb line power and of the carrier-to-noise power ratio on the performance of a frequency comb in a WDM system. We distinguish two regimes of operation depending on whether the comb source or the transmission link limits the performance of the system, i.e., defines the link reach, restricts the choice of modulation format and sets the maximum symbol rate. Finally, we investigate the achievable OSNR and channel capacity when using the tones of a soliton Kerr frequency comb as multi-wavelength carriers for WDM systems.

eess.SP↗

arXiv2019

Comb-based WDM transmission at 10 Tbit/s using a DC-driven quantum-dash mode-locked laser diode

Chip-scale frequency comb generators have the potential to become key building blocks of compact wavelength-division multiplexing (WDM) transceivers in future metropolitan or campus-area networks. Among the various comb generator concepts, quantum-dash (QD) mode-locked laser diodes (MLLD) stand out as a particularly promising option, combining small footprint with simple operation by a DC current and offering flat broadband comb spectra. However, the data transmission performance achieved with QD-MLLD was so far limited by strong phase noise of the individual comb tones, restricting experiments to rather simple modulation formats such as quadrature phase shift keying (QPSK) or requiring hard-ware-based compensation schemes. Here we demonstrate that these limitations can be over-come by digital symbol-wise phase tracking algorithms, avoiding any hardware-based phase-noise compensation. We demonstrate 16QAM dual-polarization WDM transmission on 38 channels at an aggregate net data rate of 10.68 Tbit/s over 75 km of standard single-mode fiber. To the best of our knowledge, this corresponds to the highest data rate achieved through a DC-driven chip-scale comb generator without any hardware-based phase-noise reduction schemes.

eess.SP↗

arXiv2019

Hybrid 2D/3D photonic integration for non-planar circuit topologies

Complex photonic integrated circuits (PIC) may have strongly non-planar topologies that require waveguide crossings (WGX) when realized in single-layer integration platforms. The number of WGX increases rapidly with the complexity of the circuit, in particular when it comes to highly interconnected optical switch topologies. Here, we present a concept for WGX-free PIC that rely on 3D-printed freeform waveguide overpasses (WOP). We experimentally demonstrate the viability of our approach using the example of a $4 \times 4$ switch-and-select (SAS) circuit realized on the silicon photonic platform. We further present a comprehensive graph-theoretical analysis of different $n \times n$ SAS circuit topologies. We find that for increasing port counts $n$ of the SAS circuit, the number of WGX increases with $n^4$, whereas the number of WOP increases only in proportion to $n^2$.

cs.ET↗

arXiv2019

Wireless THz link with optoelectronic transmitter and receiver

Photonics might play a key role in future wireless communication systems that operate at THz carrier frequencies. A prime example is the generation of THz data streams by mixing optical signals in high-speed photodetectors. Over the previous years, this concept has enabled a series of wireless transmission experiments at record-high data rates. Reception of THz signals in these experiments, however, still relied on electronic circuits. In this paper, we show that wireless THz receivers can also greatly benefit from optoelectronic signal processing techniques, in particular when carrier frequencies beyond 0.1 THz and wideband tunability over more than an octave is required. Our approach relies on a high-speed photoconductor and a photonic local oscillator for optoelectronic down-conversion of THz data signals to an intermediate frequency band that is easily accessible by conventional microelectronics. By tuning the frequency of the photonic local oscillator, we can cover a wide range of carrier frequencies between 0.03 THz and 0.34 THz. We demonstrate line rates of up to 10 Gbit/s on a single channel and up to 30 Gbit/s on multiple channels over a distance of 58 m. To the best of our knowledge, our experiments represent the first demonstration of a THz transmission link that exploits optoelectronic signal processing techniques both at the transmitter and the receiver.

physics.app-ph↗

arXiv2018

THz-to-Optical Conversion in Wireless Communications Using an Ultra-Broadband Plasmonic Modulator

Future wireless communication networks have to handle data rates of tens or even hundreds of Gbit/s per link, requiring carrier frequencies in the unallocated terahertz (THz) spectrum. In this context, seamless integration of THz links into existing fiber-optic infrastructures is of great importance to complement the inherent portability and flexibility advantages of wireless networks by the reliable and virtually unlimited capacity of optical transmission systems. On the technological level, this requires novel device and signal processing concepts for direct conversion of data streams between the THz and the optical domains. Here, we report on the first demonstration of a THz link that is seamlessly integrated into a fiber-optic network using direct terahertz-to-optical (T/O) conversion at the wireless receiver. We exploit an ultra-broadband silicon-plasmonic modulator having a 3 dB bandwidth in excess of 0.36 THz for T/O conversion of a 50 Gbit/s data stream that is transmitted on a 0.2885 THz carrier over a 16 m-long wireless link. Optical-to-terahertz (O/T) conversion at the wireless transmitter relies on photomixing in a uni-travelling-carrier photodiode.

physics.app-ph↗

arXiv2018

Demonstration of long-term thermally stable Silicon-Organic Hybrid Modulators at 85 °C

We report on the first demonstration of long-term thermally stable silicon-organic hybrid (SOH) modulators in accordance with Telcordia standards of high-temperature storage. The devices rely on an organic electro-optic sidechain polymer with a high glass transition temperature of 172 °C. In our high-temperature storage experiments at 85 °C, we find that the electro-optic activity converges to a constant long-term stable level after an initial decay. If we consider a burn-in time of 300 h, the π-voltage of the modulators increases on average by less than 15 % if we store the devices for additional 2400 h. The performance of the devices is demonstrated by generating high-quality 40 Gbit/s OOK signals both after the burn-in period and after extended high-temperature storage.

physics.app-ph↗

arXiv2018

Ultra-High Electro-Optic Activity Demonstrated in a Silicon-Organic Hybrid (SOH) Modulator

Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultra-high in-device EO figures of merit of up to n3r33 = 2300 pm/V achieved in a silicon-organic hybrid (SOH) Mach-Zehnder Modulator (MZM) using the EO chromophore JRD1. This is the highest material-related in-device EO figure of merit hitherto achieved in a high-speed modulator at any operating wavelength. The π-voltage of the 1.5 mm-long device amounts to 210 mV, leading to a voltage-length product of UπL = 320 Vμm - the lowest value reported for MZM that are based on low-loss dielectric waveguides. The viability of the devices is demonstrated by generating high-quality on-off-keying (OOK) signals at 40 Gbit/s with Q factors in excess of 8 at a drive voltage as low as 140 mVpp. We expect that efficient high-speed EO modulators will not only have major impact in the field of optical communications, but will also open new avenues towards ultra-fast photonic-electronic signal processing.

physics.app-ph↗

arXiv2018

Hybrid integration of silicon photonics circuits and InP lasers by photonic wire bonding

Efficient coupling of III-V light sources to silicon photonic circuits is one of the key challenges of integrated optics. Important requirements are low coupling losses, as well as small footprint and high yield of the overall assembly, along with the ability to use automated processes for large-scale production. In this paper, we demonstrate that photonic wire bonding addresses these challenges by exploiting direct-write two-photon lithography for in-situ fabrication of three-dimensional freeform waveguides between optical chips. In a series proof-of-concept experiments, we connect InP-based horizontal-cavity surface emitting lasers (HCSEL) to passive silicon photonic circuits with insertion losses down to 0.4 dB. To the best of our knowledge, this is the most efficient interface between an InP light source and a silicon photonic chip that has so far been demonstrated. Our experiments represent a key step in advancing photonic wire bonding to a universal integration platform for hybrid photonic multi-chip assemblies that combine known-good dies of different materials to high-performance hybrid multi-chip modules.

physics.app-ph↗

arXiv2017

Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices

We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which combines silicon-on-insulator waveguides with highly efficient organic electro-optic (EO) cladding materials to enable small drive voltages and sub-millimeter device lengths. In our experiments, we use an SOH IQ modulator with a π-voltage of 1.6 V to generate 100 GBd 16QAM signals. This is the first time that the 100 GBd mark is reached with an IQ modulator realized on a semiconductor substrate, leading to a single-polarization line rate of 400 Gbit/s. The peak-to-peak drive voltages amount to 1.5 Vpp, corresponding to an electrical energy dissipation in the modulator of only 25 fJ/bit.

physics.app-ph↗