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Sebastian Weidt

Publications and source records attributed to Sebastian Weidt.

10 recordsLinked to original sources

Ablation Removal of Transport-Blocking Defects in Surface-Electrode Ion Traps

We demonstrate in situ removal of a transport-blocking defect on a surface-electrode ion trap device using a Q-switched Nd:YAG 532 nm pulsed ablation laser. This approach eliminates the need to vent and rebake the vacuum system, providing a low-overhead defect-remediation technique well suited for ion-shuttling architectures where system modifications typically incur substantial downtime - particularly in shuttling focussed experiments operating at temperatures that necessitate bakes. Additionally, the hardware used is readily available in many ion trap laboratories, making this solution attractive to experiments operating in such regimes. Following ablation, we observe near-unity shuttling success rates across the previously obstructed region and measure micromotion levels that remain within acceptable limits. This technique enables rapid, reliable restoration of transport pathways without interruption to experimental operation.

quant-ph

In-vacuum surface flashover of SiN, AlN, and etched SiO2 thin films at micrometre scales

We investigate the surface flashover voltage threshold for SiO$_2$, SiN, and AlN thin films over micrometre scale lengths. Furthermore, we test the effects of different etching chemistries on SiO$_2$ layers. We find that there is little significant difference between untreated SiO$_2$ samples and those that have been etched with hydrogen fluoride or Transene AlPad Etch 639. SiN and AlN samples performed significantly better than all SiO$_2$ samples giving a 45% increase in surface flashover voltage at a distance of 5 $\mu$m with the difference increasing with electrode spacing.

cond-mat.mtrl-sci

Fast-response low power atomic oven for integration into an ion microchip

We present a novel microfabricated neutral atom source for quantum technologies that can be easily integrated onto microchip devices using well-established MEMS fabrication techniques, and contrast this to conventional off-chip ion loading mechanisms. The heating filament of the device is shown to be as small as 90$\times$90 $\mu$m$^2$. Testing of the $^{171}$Yb fluorescence response is found to be in the low tens of milliseconds, two orders of magnitude faster compared to previous literature at a power of milliwatts making it desirable for low-power device packages. We demonstrate how the evaporation material can be capped in vacuum to work with materials such as Ba that oxidise easily in air, which can avoid the need for ablation lasers in the loading process. We calculate oven lifetimes to be over 10 years of continuous use for commonly used ion species in quantum technology.

physics.app-ph

Quantum control methods for robust entanglement of trapped ions

A major obstacle in the way of practical quantum computing is achieving scalable and robust high-fidelity entangling gates. To this end, quantum control has become an essential tool, as it can make the entangling interaction resilient to sources of noise. Nevertheless, it may be difficult to identify an appropriate quantum control technique for a particular need given the breadth of work pertaining to robust entanglement. To this end, we attempt to consolidate the literature by providing a non-exhaustive summary and critical analysis. The quantum control methods are separated into two categories: schemes which extend the robustness to (i) spin or (ii) motional decoherence. We choose to focus on extensions of the $σ_x\otimesσ_x$ Molmer-Sorensen interaction using microwaves and a static magnetic field gradient. Nevertheless, some of the techniques discussed here can be relevant to other trapped ion architectures or physical qubit implementations. Finally, we experimentally realize a proof-of-concept interaction with simultaneous robustness to spin and motional decoherence by combining several quantum control methods presented in this manuscript.

quant-ph

Fabrication of Surface Ion Traps with Integrated Current Carrying Wires enabling High Magnetic Field Gradients

A major challenge for quantum computers is the scalable simultaneous execution of quantum gates. One approach to address this in trapped ion quantum computers is the implementation of quantum gates based on static magnetic field gradients and global microwave fields. In this paper, we present the fabrication of surface ion traps with integrated copper current carrying wires embedded inside the substrate below the ion trap electrodes, capable of generating high magnetic field gradients. The copper layer's measured sheet resistance of 1.12 m$\Omega$/sq at room temperature is sufficiently low to incorporate complex designs, without excessive power dissipation at high currents causing a thermal runaway. At a temperature of 40 K the sheet resistance drops to 20.9 $\mu\Omega$/sq giving a lower limit for the residual resistance ratio of 100. Continuous currents of 13 A can be applied, resulting in a simulated magnetic field gradient of 144 T/m at the ion position, which is 125 $\mu$m from the trap surface for the particular anti-parallel wire pair in our design.

quant-ph

The Impact of Hardware Specifications on Reaching Quantum Advantage in the Fault Tolerant Regime

We investigate how hardware specifications can impact the final run time and the required number of physical qubits to achieve a quantum advantage in the fault tolerant regime. Within a particular time frame, both the code cycle time and the number of achievable physical qubits may vary by orders of magnitude between different quantum hardware designs. We start with logical resource requirements corresponding to a quantum advantage for a particular chemistry application, simulating the FeMoco molecule, and explore to what extent slower code cycle times can be mitigated by using additional qubits. We show that in certain situations architectures with considerably slower code cycle times will still be able to reach desirable run times, provided enough physical qubits are available. We utilize various space and time optimization strategies that have been previously considered within the field of error-correcting surface codes. In particular, we compare two distinct methods of parallelization, Game of Surface Code's Units, and AutoCCZ factories, both of which enable one to incrementally speed up the computation until the reaction limited rate is reached. Finally we calculate the number of physical qubits which would be required to break the 256 bit elliptic curve encryption of keys in the Bitcoin network, within the small available time frame in which it would actually pose a threat to do so. It would require approximately 317 million physical qubits to break the encryption within one hour using the surface code, a code cycle time of 1 $ \mu s$, a reaction time of 10 $ \mu s$, and physical gate error of $10^{-3}$. To break the encryption instead within one day it would require 13 million physical qubits.

quant-ph

A scalable helium gas cooling system for trapped-ion applications

Microfabricated ion-trap devices offer a promising pathway towards scalable quantum computing. Research efforts have begun to focus on the engineering challenges associated with developing large-scale ion-trap arrays and networks. However, increasing the size of the array and integrating on-chip electronics can drastically increase the power dissipation within the ion-trap chips. This leads to an increase in the operating temperature of the ion-trap and limits the device performance. Therefore, effective thermal management is an essential consideration for any large-scale architecture. Presented here is the development of a modular cooling system designed for use with multiple ion-trapping experiments simultaneously. The system includes an extensible cryostat that permits scaling of the cooling power to meet the demands of a large network. Following experimental testing on two independent ion-trap experiments, the cooling system is expected to deliver a net cooling power of 111 W at ~70 K to up to four experiments. The cooling system is a step towards meeting the practical challenges of operating large-scale quantum computers with many qubits.

quant-ph

Efficient Qubit Routing for a Globally Connected Trapped Ion Quantum Computer

The cost of enabling connectivity in Noisy-Intermediate-Scale-Quantum devices is an important factor in determining computational power. We have created a qubit routing algorithm which enables efficient global connectivity in a previously proposed trapped ion quantum computing architecture. The routing algorithm was characterized by comparison against both a strict lower bound, and a positional swap based routing algorithm. We propose an error model which can be used to estimate the achievable circuit depth and quantum volume of the device as a function of experimental parameters. We use a new metric based on quantum volume, but with native two qubit gates, to assess the cost of connectivity relative to the upper bound of free, all to all connectivity. The metric was also used to assess a square grid superconducting device. We compare these two architectures and find that for the shuttling parameters used, the trapped ion design has a substantially lower cost associated with connectivity.

quant-ph

Engineering of Microfabricated Ion Traps and Integration of Advanced On-Chip Features

Trapped atomic ions are a proven and powerful tool for the fundamental research of quantum physics. They have emerged in recent years as one of the most promising candidates for several practical technologies including quantum computers, quantum simulators, atomic clocks, mass spectrometers and quantum sensors. Advanced fabrication techniques, taken from established and nascent disciplines, are being deployed to create novel, reliable devices with a view to large scale integration and commercial compatibility. This review will cover the fundamentals of ion trapping before proceeding with a discussion of the design of ion traps for the aforementioned applications. We will analyse current microfabrication techniques that are being utilised, as well as various considerations which motivate the choice of materials and processes. Finally, we discuss current efforts to include advanced, on-chip features into next generation ion traps.

physics.app-ph

Roadmap on STIRAP applications

STIRAP (Stimulated Raman Adiabatic Passage) is a powerful laser-based method, usually involving two photons, for efficient and selective transfer of population between quantum states. A particularly interesting feature is the fact that the coupling between the initial and the final quantum states is via an intermediate state even though the lifetime of the latter can be much shorter than the interaction time with the laser radiation. Nevertheless, spontaneous emission from the intermediate state is prevented by quantum interference. Maintaining the coherence between the initial and final state throughout the transfer process is crucial. STIRAP was initially developed with applications in chemical dynamics in mind. That is why the original paper of 1990 was published in The Journal of Chemical Physics. However, as of about the year 2000, the unique capabilities of STIRAP and its robustness with respect to small variations of some experimental parameters stimulated many researchers to apply the scheme in a variety of other fields of physics. The successes of these efforts are documented in this collection of articles.

quant-ph