arXiv subjects

Sebastiano Battisti

Publications and source records attributed to Sebastiano Battisti.

9 recordsLinked to original sources

arXiv2026

Extremely weak electron-phonon coupling in Josephson junctions built on InAs on Insulator

InAs-on-Insulator (InAsOI) enables an effective superconducting proximity effect and extremely weak electron-phonon (e-ph) coupling, allowing precise electronic-temperature control with minimal power. Using Josephson junction thermometry, we extract sub-Kelvin e-ph coupling parameters, confirming strong thermal decoupling and robust superconducting performance. The combination of weak e-ph interaction and full electrostatic tunability makes InAsOI a powerful platform for coherent caloritronics, ultrasensitive bolometry, single-photon detection, and gate-controlled superconducting thermal circuits.

cond-mat.supr-con↗

arXiv2025

Giant thermal modulation via a semiconductor-superconductor photonic field-effect heat transistor

We present a groundbreaking demonstration of thermal modulation in a field-effect-controllable semiconductor-superconductor hybrid structure, wherein the heating mechanism is exclusively radiative. The architecture comprises two reservoirs separated by $\sim 1$ mm and interconnected via a completely non-galvanic electrical circuit, enabling the transfer of black-body radiation from the hot to the cold reservoir. Our device utilizes a superconducting Josephson field-effect transistor to achieve magnetic-field-free gate-tunable regulation of heat currents within the circuit. While prior studies have indicated the potential for electrostatic modulation of thermal transport properties, our framework demonstrates a temperature modulation of up to $\sim 45$ mK, exceeding prior findings by more than an order of magnitude. Furthermore, it proves a thermal transimpedance of $\sim 20$ mK/V at a bath temperature of $30$ mK. The development of such systems holds substantial promise for advancing heat management and routing in quantum chips and radiation sensors, as it enables precise nonlocal control of heat flow towards a designated structure, even when the heat source is distant and non-galvanically coupled.

cond-mat.mes-hall↗

arXiv2025

Streamline controlled rectification of supercurrent in thin-film asymmetric weak links

In this study, we examined the supercurrent diode effect (SDE) in mesoscopic superconducting weak links formed by asymmetric Dayem bridges. These planar metallic constrictions, which naturally exhibit Josephsonlike behavior, offer a fundamental platform for investigating nonreciprocal transport phenomena in a regime where the bridge width aligns with the superconducting coherence length. The foundational concept is inspired by the Tesla valve, a classical fluidic device that achieves flow rectification through interference and turbulence between fluid streams enabled by geometric asymmetry. Analogously, we demonstrate that spatial asymmetry within superconducting structures can result in rectification due to the polarity-dependent interaction between transport and screening currents. By implementing controlled geometric defects at the junction between the constriction and superconducting leads, we induce current crowding and disrupt spatial inversion symmetry, thus facilitating directional switching behavior. Experimental results indicate a linear-in-field rectification regime at low magnetic fields, driven by the interaction between transport and screening currents, which is succeeded by complex vortex dynamics within the superconducting banks at elevated fields. Time-dependent Ginzburg-Landau simulations replicate significant features of the experimental observations and substantiate the influence of both screening currents and rearrangements of Abrikosov vortices. A comparative study across various geometries highlights the crucial role of defect shape and spatial confinement in determining the rectification efficiency, revealing a minimum threshold in bridge width below which crowding-induced SDE is significantly reduced. Our findings advocate for mesoscopic Dayem bridges as a flexible platform for designing and controlling superconducting diode functionalities.

cond-mat.supr-con↗

arXiv2025

Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics

InAs on Insulator (InAsOI) has been recently demonstrated as a promising platform to develop hybrid semiconducting-superconducting Josephson Junctions (JJs) and Josephson Field Effect Transistors (JoFETs). The InAsOI consists of an InAs epilayer grown onto a cryogenic-electrically-insulating InAlAs metamorphic buffer, which allows the electrical decoupling of surface-exposed adjacent devices together with a high critical current density integration. The miniaturization of Si microchips has progressed significantly due to the integration of high permittivity (high-k) gate insulators, allowing an increased gate coupling with the transistor channel with consequent reduced gate operating voltages and leakages. As well as for Si-based FETs, integrating high-k gate insulators with JoFETs promises similar advantages in superconducting electronics. Here, we investigate the gate-tunable electrical properties of InAsOI-based JoFETs featuring different high-k gate insulators, namely, HfO2 and Al2O3. We found that both the ungated and gate-tunable electrical properties of the JoFETs are strongly dependent on the insulator chosen. With both dielectrics, the JoFETs can entirely suppress the switching current and increase the normal state resistance by 10-20 times using negative gate voltages. The HfO2-JoFETs exhibit improved gate-tunable electrical performance compared to those achieved with Al2O3-JoFETs, which is related to the higher permittivity of the insulator. Gate-dependent electrical properties of InAsOI-based JoFETs were evaluated in the temperature range from 50 mK to 1 K. Moreover, under the influence of an out-of-plane magnetic field, JoFETs exhibited an unconventional Fraunhofer diffraction pattern, from which an edge-peaked supercurrent density distribution was calculated.

cond-mat.supr-con↗

arXiv2025

Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithographic Patterning Method

Dielectrics featuring a high relative permittivity, i.e., high-k dielectrics, have become the standard insulators in gate architectures, enhancing the electrical performance of both room temperature and cryogenic electronics. This study delves into the cryogenic (3 K) performance of high-k dielectrics commonly used as gate insulators. We fabricated Al2O3 and HfO2 layers via Atomic Layer Deposition (ALD) and we extrapolated relative permittivity (k) and dielectric strength (E_BD) from AC (100 Hz to 100 kHz) and DC measurements on metal-insulator-metal capacitors. Our findings reveal a strong dependence of HfO2 cryogenic performance on the ALD growth temperature, while the latter shows a negligible impact on Al2O3. We estimated a ~9 % and ~14 % reduction of the relative permittivity of HfO2 and Al2O3, respectively, from 300 K to 3 K. Additionally, we designed and fabricated Al2O3/HfO2 bilayers and we checked their properties at cryogenic temperatures. The study also investigates the impact of the patterning method, namely, UV or electron-beam lithography (acceleration voltage of 10, 20, or 30 kV), on the high-k dielectric properties.

cond-mat.mtrl-sci↗

arXiv2024

Extremely weak sub-kelvin electron-phonon coupling in InAs On Insulator

We are proposing, as an ideal candidate for caloritronic devices operating at subKelvin temperatures, a hybrid superconductor-semiconductor platform named InAs on insulator (InAsOI). This heterostructure is made by doped InAs grown on an insulating buffer of InAlAs on a GaAs substrate. Caloritronic devices aim to heat or cool electrons out of equilibrium with respect to the phonon degree of freedom. However, their performances are usually limited by the strength of the electron-phonon (e-ph) coupling and the associated power loss. Our work discusses the advantages of the InAsOI platform, which are based on the significantly low e-ph coupling measured compared to all-metallic state-of-the-art caloritronic devices. Our structure demonstrates values of the e-ph coupling constant up to two orders of magnitude smaller than typical values in metallic structures.

cond-mat.supr-con↗

arXiv2023

Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium

The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological reasons. To gain a deeper understanding of this effect and develop superconducting technologies based on it, the material and physical parameters crucial for GCS must be identified. Top-down fabrication protocols should be also optimized to increase device scalability, although studies suggest that top-down fabricated devices are more resilient to show GCS. Here, we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the non-centrosymmetric superconductor NbRe. Unlike other devices previously reported, our NbRe devices systematically exhibit GCS, when made in specific conditions, which paves the way for higher device scalability. Our results also suggest that surface properties of NbRe nanobridges and their modification during fabrication are key for GCS.

cond-mat.supr-con↗

arXiv2023

Bipolar thermoelectric superconducting single-electron transistor

Thermoelectric effects in normal metals and superconductors are usually very small due to the presence of electron-hole symmetry. Here, we show that superconducting junctions brought out of equilibrium manifest a sizable bipolar thermoelectric effect that stems from a strong violation of the detailed balance. To fully control the effect, we consider a thermally biased SIS'IS junction where the capacitance of the central S' region is small enough to establish a Coulomb blockade regime. By exploiting charging effects we are able to tune the Seebeck voltage, the thermocurrent, and thereby the power output of this structure, via an external gate. We then analyse the main figures of merit of bipolar thermoelectricity and we prospect for possible applications.

cond-mat.supr-con↗

arXiv2021

Gate-control of the current-flux relation of a Josephson quantum interferometer based on proximitized metallic nanojuntions

We demonstrate an Al superconducting quantum interference device in which the Josephson junctions are implemented through gate-controlled proximitized Cu mesoscopic weak-links. The latter behave analogously to genuine superconducting metals in terms of the response to electrostatic gating, and provide a good performance in terms of current-modulation visibility. We show that, through the application of a static gate voltage, we are able to modify the interferometer current-flux relation in a fashion which seems compatible with the introduction of $π$-channels within the gated weak-link. Our results suggest that the microscopic mechanism at the origin of the suppression of the switching current in the interferometer is apparently phase coherent, resulting in an overall damping of the superconducting phase rigidity. We finally tackle the performance of the interferometer in terms of responsivity to magnetic flux variations in the dissipative regime, and discuss the practical relevance of gated proximity-based all-metallic SQUIDs for magnetometry at the nanoscale.

cond-mat.supr-con↗