arXiv subjects

See-Hun Yang

Publications and source records attributed to See-Hun Yang.

At least 19 recordsLinked to original sources

arXiv2024

Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization

Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of the memory storage layer. Here we show that fast and highly reliable switching is possible using a very low magnetization ferrimagnetic Heusler alloy, Mn3Ge. Moreover, the tunneling magnetoresistance is the highest yet achieved for a ferrimagnetic material at ambient temperature. Furthermore, the devices were prepared on technologically relevant amorphous substrates using a novel combination of a nitride seed layer and a chemical templating layer. These results show a clear path to the lowering of switching currents using ferrimagnetic Heusler materials and, therefore, to the scaling of high performance magnetic random access memories beyond those nodes possible with ferromagnetic devices.

cond-mat.mtrl-sci↗

arXiv2022

Generation of out-of-plane polarized spin current by spin swapping

The generation of spin currents and their application to the manipulation of magnetic states is fundamental to spintronics. Of particular interest are chiral antiferromagnets that exhibit properties typical of ferromagnetic materials even though they have negligible magnetization. Here, we report the generation of a robust spin current with both in-plane and out-of-plane spin polarization in epitaxial thin films of the chiral antiferromagnet Mn3Sn in proximity to permalloy thin layers. By employing temperature-dependent spin-torque ferromagnetic resonance, we find that the chiral antiferromagnetic structure of Mn3Sn is responsible for an in-plane polarized spin current that is generated from the interior of the Mn3Sn layer and whose temperature dependence follows that of this layer's antiferromagnetic order. On the other hand, the out-of-plane spin polarized spin current is unrelated to the chiral antiferromagnetic structure and is instead the result of scattering from the Mn3Sn/permalloy interface. We substantiate the later conclusion by performing studies with several other non-magnetic metals all of which are found to exhibit out-of-plane polarized spin currents arising from the spin swapping effect.

cond-mat.mtrl-sci↗

arXiv2021

Giant oscillatory Gilbert damping in superconductor/ferromagnet/superconductor junctions

Interfaces between materials with differently ordered phases present unique opportunities for exotic physical properties, especially the interplay between ferromagnetism and superconductivity in the ferromagnet/superconductor heterostructures. The investigation of zero- and pi-junctions has been of particular interest for both fundamental physical science and emerging technologies. Here, we report the experimental observation of giant oscillatory Gilbert damping in the superconducting Nb/NiFe/Nb junctions with respect to the NiFe thickness. This observation suggests an unconventional spin pumping and relaxation via zero-energy Andreev bound states that exist only in the Nb/NiFe/Nb pi-junctions, but not in the Nb/NiFe/Nb zero-junctions. Our findings could be important for further exploring the exotic physical properties of ferromagnet/superconductor heterostructures, and potential applications of ferromagnet pi-junctions in quantum computing, such as half-quantum flux qubits.

cond-mat.supr-con↗

arXiv2021

Half-integer Shapiro Steps in Strong Ferromagnetic Josephson Junctions

We report the experimental observation of half-integer Shapiro steps in the strong ferromagnetic Josephson junction (Nb-NiFe-Nb) by investigating the current-phase relation under radiofrequency microwave excitation. The half-integer Shapiro steps are robust in a wide temperature range from T = 4 to 7 K. The half-integer Shapiro steps could be attributed to co-existence of 0- and pi-states in the strong ferromagnetic NiFe Josephson junctions with the spatial variation of the2 NiFe thickness. This scenario is also supported by the high-resolution transmission electron microscopy characterization of the Nb/NiFe/Nb junction.

cond-mat.supr-con↗

arXiv2021

Determination of the spin Hall angle by the inverse spin Hall effect, device level ferromagnetic resonance, and spin torque ferromagnetic resonance: a comparison of methods

The spin torque ferromagnetic resonance (STFMR) is one of the popular methods for measurement of the spin Hall angle (SHA). However, in order to accurately determine SHA from STFMR measurements, the acquired data must be carefully analyzed: The resonance linewidth should be determined to an accuracy of a fraction of an Oe, while the dynamical interaction leading to the measured response consists of the conventional field-induced ferromagnetic resonance (FMR), spin-torque induced FMR, and of the inverse spin Hall effect (ISHE). Additionally, the signal often deteriorates when DC current is passed through the device. In this work we compare the STFMR method with two other FMR-based methods that are used to extract SHA. The first is a device-level FMR and the second is based on the ISHE. We identify artefacts that are caused by the noise floor of the instrumentation that make the measurement of SHA illusive even when the signal to noise ratio seems to be reasonable. Additionally, we estimate a 10% error in SHA that results from neglecting the magnetic anisotropies as in conventional measurements. Overall, we find the STFMR to be the most robust of the three methods despite the complexity of the interaction taking place therein. The conclusions of our work lead to a more accurate determination of SHA and will assist in the search of novel materials for energy efficient spin-based applications.

cond-mat.str-el↗

arXiv2021

Roadmap of spin-orbit torques

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.

cond-mat.mes-hall↗

arXiv2020

Spintronics on Chiral Objects

Chirality, handedness, is one of the most fundamental intriguing asymmetries in nature. By definition, chiral objects cannot be superimposed onto each other after mirror reflection operation. Numerous examples of chiral structures can be found in nature, for example, chiral molecules and chiral magnetic nanostructures. Moving electrons are associated with handedness by their own spins due to spin-orbit interaction thus exhibiting various emergent phenomena as they interact with chiral materials, which otherwise would not be observed in achiral systems. This new paradigm allows the potential development of new forms of devices or methods by utilizing reciprocal interaction of chiral objects with moving electron spins. This review updates the remarkable progresses in Spintronics on Chiral Objects that have been made over the past few years providing provides an outlook for new opportunities and potential applications with new insights.

cond-mat.mes-hall↗

arXiv2019

Electric-Field Control of the Interlayer Exchange Coupling for Magnetization Switching

We propose an electric-field-controlled mechanism for magnetization switching assisted solely by the interlayer-exchange coupling (IEC) between the fixed and the free magnets, which are separated by two oxide barriers sandwiching a spacer material known for exhibiting large IEC. The basic idea relies on the formation of a quantum-well (QW) within the spacer material and controlling the transmission coefficient across the structure with an electric-field via the resonant tunneling phenomena. Using non-equilibrium Green's function (NEGF) method, we show that the structure can exhibit a bias-dependent oscillatory IEC that can switch the free magnet to have either a parallel or an antiparallel configuration with respect to the fixed magnet, depending on the sign of the IEC. Such bi-directional switching can be achieved with the same voltage polarity but different magnitudes. With proper choice of the spacer material, the current in the structure can be significantly reduced. Due to the conservative nature of the exerted torque by the IEC, the switching threshold of the proposed mechanism is decoupled from the switching speed, while the conventional spin-torque devices exhibit a trade-off due to the non-conservative nature of the exerted torque.

cond-mat.mes-hall↗

arXiv2019

Nonlinear magnetization dynamics driven by strong terahertz fields

We present a comprehensive experimental and numerical study of magnetization dynamics triggered in a thin metallic film by single-cycle terahertz pulses of $\sim20$ MV/m electric field amplitude and $\sim1$ ps duration. The experimental dynamics is probed using the femtosecond magneto-optical Kerr effect (MOKE), and it is reproduced numerically using macrospin simulations. The magnetization dynamics can be decomposed in three distinct processes: a coherent precession of the magnetization around the terahertz magnetic field, an ultrafast demagnetization that suddenly changes the anisotropy of the film, and a uniform precession around the equilibrium effective field that is relaxed on the nanosecond time scale, consistent with a Gilbert damping process. Macrospin simulations quantitatively reproduce the observed dynamics, and allow us to predict that novel nonlinear magnetization dynamics regimes can be attained with existing table-top terahertz sources.

cond-mat.mes-hall↗

arXiv2016

Classical limit of Rabi nutations in spins of ferromagnets

Rabi oscillations describe the interaction of a two-level system with a rotating electromagnetic field. As such, they serve as the principle method for manipulating quantum bits. By using a combination of femtosecond laser pulses and microwave excitations, we have observed the classical form of Rabi nutations in a ferromagnetic system whose equations of motion mirror the case of a precessing quantum two-level system. Key to our experiments is the selection of a subset of spins that is in resonance with the microwave excitation and whose coherence time is thereby extended. Taking advantage of Gilbert damping, the relaxation times are further increased such that mode-locking takes place. The observation of such Rabi nutations is the first step towards potential applications based on phase-coherent spin manipulation in ferromagnets.

cond-mat.mes-hall↗

arXiv2016

Experimental Investigation of Temperature-Dependent Gilbert Damping in Permalloy Thin Films

The Gilbert damping of ferromagnetic materials is arguably the most important but least understood phenomenological parameter that dictates real-time magnetization dynamics. Understanding the physical origin of the Gilbert damping is highly relevant to developing future fast switching spintronics devices such as magnetic sensors and magnetic random access memory. Here, we report an experimental study of temperature-dependent Gilbert damping in permalloy (Py) thin films of varying thicknesses by ferromagnetic resonance. From the thickness dependence, two independent contributions to the Gilbert damping are identified, namely bulk damping and surface damping. Of particular interest, bulk damping decreases monotonically as the temperature decreases, while surface damping shows an enhancement peak at the temperature of ~50 K. These results provide an important insight to the physical origin of the Gilbert damping in ultrathin magnetic films.

cond-mat.mtrl-sci↗

arXiv2015

Giant thermal spin torque assisted magnetic tunnel junction switching

Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin dependent thermoelectric properties of magnetic materials, novel means of generating spin-currents from temperature gradients, and their associated thermal spin torques (TSTs) have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge-currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe.

cond-mat.mes-hall↗

arXiv2015

Role of transparency of platinum-ferromagnet interface in determining intrinsic magnitude of spin Hall effect

The spin Hall effect (SHE) converts charge current to pure spin currents in orthogonal directions in materials that have significant spin-orbit coupling.The efficiency of the conversion is described by the spin Hall Angle (SHA). The SHA can most readily be inferred by using the generated spin currents to excite or rotate the magnetization of ferromagnetic films or nano-elements via spin-transfer torques.Some of the largest spin torque derived spin Hall angles (ST-SHA) have been reported in platinum. Here we show, using spin torque ferromagnetic resonance (ST-FMR) measurements, that the transparency of the Pt-ferromagnet interface to the spin current plays a central role in determining the magnitude of the ST-SHA. We measure a much larger ST-SHA in Pt/cobalt (~0.11) compared to Pt/permalloy (~0.05) bilayers when the interfaces are assumed to be completely transparent. Taking into account the transparency of these interfaces, as derived from spin-mixing conductances, we find that the intrinsic SHA in platinum has a much higher value of 0.19 +- 0.04 as compared to the ST-SHA. The importance of the interface transparency is further exemplified by the insertion of atomically thin magnetic layers at the Pt/permalloy interface that we show strongly modulates the magnitude of the ST-SHA.

cond-mat.mes-hall↗

arXiv2013

Domain wall trajectory determined by its fractional topological edge defects

A domain wall (DW) in a ferromagnetic nanowire is composed of elementary topological bulk and edge defects with integer and fractional winding numbers, respectively, whose relative spatial arrangement determines the chirality of the DW. Here we show how we can understand and control the trajectory of DWs in magnetic branched networks, composed of connected nanowires, by considering their fractional elementary topological defects and how they interact with those innate to the network. We first develop a highly reliable mechanism for the injection of a DW of a given chirality into a nanowire and show that its chirality determines which branch the DW follows at a symmetric Y-shaped magnetic junction - the fundamental building block of the network. Using these concepts, we unravel the origin of the one-dimensional nature of magnetization reversal of connected artificial spin ice systems that have been observed in the form of Dirac strings.

cond-mat.mes-hall↗

arXiv2013

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

There has been much interest in the injection and detection of spin polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized carriers into Nb-doped strontium titanate (STO) single crystals and La-doped STO epitaxial thin films using MgO tunnel barriers and the three-terminal Hanle technique. Spin lifetimes of up to ~100 ps are measured at room temperature and vary little as the temperature is decreased to low temperatures. However, the mobility of the STO has a strong temperature dependence. This behavior and the carrier doping dependence of the spin lifetime suggest that the spin lifetime is limited by spin-dependent scattering at the MgO/STO interfaces, perhaps related to the formation of doping induced Ti3+. Our results reveal a severe limitation of the three-terminal Hanle technique for measuring spin lifetimes within the interior of the subject material.

cond-mat.mtrl-sci↗

arXiv2011

The Kondo effect in magnetic impurities and ferromagnetic contacts

Planar macroscopic magnetic tunnel junctions exhibit well defined zero bias anomalies when a thin layer of ferromagnetic CoFe(B) nanodots is inserted within a MgO based tunnel barrier. The conductance curves exhibit a single and a double peak, respectively, for anti-parallel and parallel alignment of the magnetizations of the electrodes which sandwich the tunnel barrier. This leads to a suppression of the tunneling magnetoresistance near zero bias. We show that the double peak structure indicates that the zero-bias anomaly is spin-split due to a magnetic exchange interaction between the magnetic nanodots and the ferromagnetic electrodes. Using a model based on an Anderson quantum dot coupled to ferromagnetic leads, we show that these results imply the coexistence of a Kondo effect and ferromagnetism.

cond-mat.str-el↗

arXiv2011

Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers

The influence of insertion of an ultra-thin NiO layer between the MgO barrier and ferromagnetic electrode in magnetic tunnel junctions has been investigated by measuring the tunneling magnetoresistance and the X-ray magnetic circular dichroism (XMCD). The magnetoresistance shows a high asymmetry with respect to bias voltage, giving rise to a negative value of -16% at 2.8 K. We attribute this to the formation of non-collinear spin structures in the NiO layer as observed by XMCD. The magnetic moments of the interface Ni atoms tilt from the easy axis due to exchange interaction and the tilting angle decreases with increasing the NiO thickness. The experimental observations are further support by non-collinear spin density functional theory.

cond-mat.mtrl-sci↗

arXiv2010

Extremely long quasiparticle spin lifetimes in superconducting aluminium using MgO tunnel spin injectors

There has been an intense search in recent years for long-lived spin-polarized carriers for spintronic and quantum-computing devices. Here we report that spin polarized quasi-particles in superconducting aluminum layers have surprisingly long spin-lifetimes, nearly a million times longer than in their normal state. The lifetime is determined from the suppression of the aluminum's superconductivity resulting from the accumulation of spin polarized carriers in the aluminum layer using tunnel spin injectors. A Hanle effect, observed in the presence of small in-plane orthogonal fields, is shown to be quantitatively consistent with the presence of long-lived spin polarized quasi-particles. Our experiments show that the superconducting state can be significantly modified by small electric currents, much smaller than the critical current, which is potentially useful for devices involving superconducting qubits.

cond-mat.mes-hall↗