arXiv subjects

Seng Ghee Tan

Publications and source records attributed to Seng Ghee Tan.

40 records · Page 3Linked to original sources

arXiv2012

Electrical modulation of the edge channel transport in topological insulators coupled to ferromagnetic leads

The counterpropagating edge states of a two-dimensional topological insulator (TI) carry electrons of opposite spins. We investigate the transport properties of edge states in a two-dimensional TI which is contacted to ferromagnetic leads. The application of a side-gate voltage induces a constriction or quantum point contact (QPC) which couples the two edge channels. The transport properties of the system is calculated via the Keldysh nonequilibrium Green's function method. We found that inter-edge spin-flip coupling can significantly enhance (suppress) the charge current when the magnetization of the leads are anti-parallel (parallel) to one another. On the other hand, spin-conserving inter-edge coupling generally reduces the current by backscattering regardless of the magnetization configuration. The charge current and the conductance as a function of the bias voltage, also exhibit similar trends with respect to spin-flip coupling strength, for both parallel and anti-parallel configurations. Hence, gate voltage modulation of edge states via a QPC can provide a means of modulating the spin or charge current flow in TI-based spintronics devices.

cond-mat.mes-hall↗

arXiv2012

Spin torque due to non-uniform Rashba spin orbit effect

Following the early theoretical descriptions of the spin-orbit-induced spin torque [S.G. Tan et al., arXiv:0705.3502 (2007); S.G.Tan et al., Ann. Phys.326, 207 (2011)], the first experimental observation of such effect was reported by L. M. Miron et al., Nature Mater, 9, 230 (2010). We present in this article three additional spin torque terms that arise from the non-uniformity in magnetization space of the Rashba spin-orbit effect. We propose a simple Rashba gradient device which could potentially lower switching current by n orders of magnitude, where large n measures a small magnetization change.

cond-mat.mes-hall↗

arXiv2012

Nonequilibrium Keldysh Formalism for Interacting Leads -- Application to Quantum Dot Transport Driven by Spin Bias

The conductance through a mesoscopic system of interacting electrons coupled to two adjacent leads is conventionally derived via the Keldysh nonequilibrium Green's function technique, in the limit of noninteracting leads [see Y. Meir \emph{et al.}, Phys. Rev. Lett. \textbf{68}, 2512 (1991)]. We extend the standard formalism to cater for a quantum dot system with Coulombic interactions between the quantum dot and the leads. The general current expression is obtained by considering the equation of motion of the time-ordered Green's function of the system. The nonequilibrium effects of the interacting leads are then incorporated by determining the contour-ordered Green's function over the Keldysh loop and applying Langreth's theorem. The dot-lead interactions significantly increase the height of the Kondo peaks in density of states of the quantum dot. This translates into two Kondo peaks in the spin differential conductance when the magnitude of the spin bias equals that of the Zeeman splitting. There also exists a plateau in the charge differential conductance due to the combined effect of spin bias and the Zeeman splitting. The low-bias conductance plateau with sharp edges is also a characteristic of the Kondo effect. The conductance plateau disappears for the case of asymmetric dot-lead interaction.

cond-mat.str-el↗

arXiv2012

Inverse Spin Hall Effect in Ferromagnetic Metal with Rashba Spin Orbit Coupling

We report an intrinsic form of the inverse spin Hall effect (ISHE) in ferromagnetic (FM) metal with Rashba spin orbit coupling (RSOC), which is driven by a normal charge current. Unlike the conventional form, the ISHE can be induced without the need for spin current injection from an external source. Our theoretical results show that Hall voltage is generated when the FM moment is perpendicular to the ferromagnetic layer. The polarity of the Hall voltage is reversed upon switching the FM moment to the opposite direction, thus promising a useful readback mechanism for memory or logic applications.

cond-mat.mes-hall↗