arXiv subjects

Seo-Won Lee

Publications and source records attributed to Seo-Won Lee.

13 recordsLinked to original sources

arXiv2019

Topological waveguide based on metamaterials of magnetic solitons

We theoretically investigate coupled gyration modes of magnetic solitons whose distances to the nearest neighbors are staggered. In a one-dimensional bipartite lattice, analogous to the Su-Schrieffer-Heeger model, there is a mid-gap gyration mode bounded at the domain wall connecting topologically distinct two phases. As a technological application, we show that a one-dimensional domain-wall string in a two-dimensional soliton lattice can serve as a topological waveguide of magnetic excitations, which offers functionalities of a signal localization and a selective propagation of the frequency modes. Our result offers an alternative way to control of the magnetic excitation modes by using a magnetic metamaterial for future spintronic devices.

cond-mat.mes-hall↗

arXiv2019

Unidirectional Magnon-Driven Domain Wall Motion Due to the Interfacial Dzyaloshinskii-Moriya Interaction

We demonstrate a unidirectional motion of a quasiparticle without an explicit symmetry breaking along the space-time coordinate of the particle motion. This counterintuitive behavior originates from a combined action of two intrinsic asymmetries in the other two directions. We realize this idea with the magnon-driven motion of a magnetic domain wall in thin films with interfacial asymmetry. Contrary to previous studies, the domain wall moves along the same direction regardless of the magnon-flow direction. Our general symmetry analysis and numerical simulation reveal that the odd order contributions from the interfacial asymmetry is unidirectional, which is dominant over bidirectional contributions in the realistic regime. We develop a simple analytic theory on the unidirectional motion, which provides an insightful description of this counterintuitive phenomenon.

cond-mat.mes-hall↗

arXiv2018

Long spin coherence length and bulk-like spin-orbit torque in ferrimagnetic multilayers

Ferromagnetic spintronics has been a main focus as it offers non-volatile memory and logic applications through current-induced spin-transfer torques. Enabling wider applications of such magnetic devices requires a lower switching current for a smaller cell while keeping the thermal stability of magnetic cells for non-volatility. As the cell size reduces, however, it becomes extremely difficult to meet this requirement with ferromagnets because spin-transfer torque for ferromagnets is a surface torque due to rapid spin dephasing, leading to the 1/ferromagnet-thickness dependence of the spin-torque efficiency. Requirement of a larger switching current for a thicker and thus more thermally stable ferromagnetic cell is the fundamental obstacle for high-density non-volatile applications with ferromagnets. Theories predicted that antiferromagnets have a long spin coherence length due to the staggered spin order on an atomic scale, thereby resolving the above fundamental limitation. Despite several spin-torque experiments on antiferromagnets and ferrimagnetic alloys, this prediction has remained unexplored. Here we report a long spin coherence length and associated bulk-like-torque characteristic in an antiferromagnetically coupled ferrimagnetic multilayer. We find that a transverse spin current can pass through > 10 nm-thick ferrimagnetic Co/Tb multilayers whereas it is entirely absorbed by 1 nm-thick ferromagnetic Co/Ni multilayer. We also find that the switching efficiency of Co/Tb multilayers partially reflects a bulk-like-torque characteristic as it increases with the ferrimagnet-thickness up to 8 nm and then decreases, in clear contrast to 1/thickness-dependence of Co/Ni multilayers. Our results on antiferromagnetically coupled systems will invigorate researches towards energy-efficient spintronic technologies.

cond-mat.mtrl-sci↗

arXiv2017

Anomalous spin-orbit torque switching due to field-like torque-assisted domain wall reflection

Spin-orbit torques (SOT) allow the electrical control of magnetic states. Current-induced SOT switching of the perpendicular magnetization is of particular technological importance. The SOT consists of damping-like and field-like torques so that the efficient SOT switching requires to understand combined effects of the two torque-components. Previous quasi-static measurements have reported an increased switching probability with the width of current pulses, as predicted with considering the damping-like torque only. Here we report a decreased switching probability at longer pulse-widths, based on time-resolved measurements. Micromagnetic analysis reveals that this anomalous SOT switching results from domain wall reflections at sample edges. The domain wall reflection is found to strongly depend on the field-like torque and its relative sign to the damping-like torque. Our result demonstrates a key role of the field-like torque in the deterministic SOT switching and notifies the importance of sign correlation of the two torque-components, which may shed light on the SOT switching mechanism.

cond-mat.mtrl-sci↗

arXiv2017

Spin-wave propagation in cubic anisotropic materials

The information carrier of modern technologies is the electron charge whose transport inevitably generates Joule heating. Spin-waves, the collective precessional motion of electron spins, do not involve moving charges and thus avoid Joule heating. In this respect, magnonic devices in which the information is carried by spin-waves attract interest for low-power computing. However implementation of magnonic devices for practical use suffers from low spin-wave signal and on/off ratio. Here we demonstrate that cubic anisotropic materials can enhance spin-wave signals by improving spin-wave amplitude as well as group velocity and attenuation length. Furthermore, cubic anisotropic material shows an enhanced on/off ratio through a laterally localized edge mode, which closely mimics the gate-controlled conducting channel in traditional field-effect transistors. These attractive features of cubic anisotropic materials will invigorate magnonics research towards wave-based functional devices.

cond-mat.mtrl-sci↗

arXiv2017

Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers

An asymmetric magnetoresistance (MR) is investigated in Py/Pt bilayers. The asymmetric MR linearly increases with current density up to a threshold, and increases more rapidly above the threshold. To reveal the origin of threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of asymmetric MR.

cond-mat.mtrl-sci↗

arXiv2017

Chiral magnetoresistance in Pt/Co/Pt zigzag wires

The Rashba effect leads to a chiral precession of the spins of moving electrons while the Dzyaloshinskii-Moriya interaction (DMI) generates preference towards a chiral profile of local spins. We predict that the exchange interaction between these two spin systems results in a 'chiral' magnetoresistance depending on the chirality of the local spin texture. We observe this magnetoresistance by measuring the domain wall (DW) resistance in a uniquely designed Pt/Co/Pt zigzag wire, and by changing the chirality of the DW with applying an in-plane magnetic field. A chirality-dependent DW resistance is found, and a quantitative analysis shows a good agreement with a theory based on the Rashba model. Moreover, the DW resistance measurement allows us to independently determine the strength of the Rashba effect and the DMI simultaneously, and the result implies a possible correlation between the Rashba effect, the DMI, and the symmetric Heisenberg exchange.

cond-mat.mes-hall↗

arXiv2016

Antiferromagnetic domain wall motion driven by spin-orbit torques

We theoretically investigate dynamics of antiferromagnetic domain walls driven by spin-orbit torques in antiferromagnet/heavy metal bilayers. We show that spin-orbit torques drive antiferromagnetic domain walls much faster than ferromagnetic domain walls. As the domain wall velocity approaches the maximum spin-wave group velocity, the domain wall undergoes Lorentz contraction and emits spin-waves in the terahertz frequency range. The interplay between spin orbit torques and the relativistic dynamics of antiferromagnetic domain walls leads to the efficient manipulation of antiferromagnetic spin textures and paves the way for the generation of high frequency signals in antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2015

Detrimental Effect of Interfacial Dzyaloshinskii-Moriya Interaction on Perpendicular Spin-Transfer-Torque Magnetic Random Access Memory

Interfacial Dzyaloshinskii-Moriya interaction in ferromagnet/heavy metal bilayers is recently of considerable interest as it offers an efficient control of domain walls and the stabilization of magnetic skyrmions. However, its effect on the performance of perpendicular spin transfer torque memory has not been explored yet. We show based on numerical studies that the interfacial Dzyaloshinskii-Moriya interaction decreases the thermal energy barrier while increases the switching current. As high thermal energy barrier as well as low switching current is required for the commercialization of spin torque memory, our results suggest that the interfacial Dzyaloshinskii-Moriya interaction should be minimized for spin torque memory applications.

cond-mat.mtrl-sci↗

arXiv2015

Magnetization dynamics driven by angle-dependent spin-orbit spin transfer torque

Spin-orbit spin transfer torque allows an efficient control of magnetization by an in-plane current. Recent experiments found that the spin-orbit torque has strong dependence on the magnetization angle [Garello et al., Nature Nanotechnol. 8, 587 (2013); Qiu et al., Sci. Rep. 4, 4491 (2014)]. We theoretically investigate magnetization switching and domain wall motion in a perpendicularly magnetized layer, induced by angle-dependent spin-orbit torque. We obtain analytic expressions of the switching current and domain wall velocity, in agreement with numerical results. Based on the expressions, we find that the spin-orbit torque increasing with the polar angle of magnetization is beneficial for both switching and domain wall motion. Our result will serve as a guideline to design and interpret switching and domain wall experiments based on spin-orbit torque.

cond-mat.mtrl-sci↗

arXiv2014

Thermally activated switching of perpendicular magnet by spin-orbit spin torque

We theoretically investigate the threshold current for thermally activated switching of a perpendicular magnet by spin-orbit spin torque. Based on the Fokker-Planck equation, we obtain an analytic expression of the switching current, in agreement with numerical result. We find that thermal energy barrier exhibits a quasi-linear dependence on the current, resulting in an almost linear dependence of switching current on the log-scaled current pulse-width even below 10 ns. This is in stark contrast to standard spin torque switching, where thermal energy barrier has a quadratic dependence on the current and the switching current rapidly increases at short pulses. Our results will serve as a guideline to design and interpret switching experiments based on spin-orbit spin torque

cond-mat.mtrl-sci↗

arXiv2013

Self-consistent calculation of spin transport and magnetization dynamics

A spin-polarized current transfers its spin-angular momentum to a local magnetization, exciting current-induced magnetization dynamics. So far, most studies in this field have focused on the direct effect of spin transport on magnetization dynamics, but ignored the feedback from the magnetization dynamics to the spin transport and back to the magnetization dynamics. Although the feedback is usually weak, there are situations when it can play an important role in the dynamics. In such situations, self-consistent calculations of the magnetization dynamics and the spin transport can accurately describe the feedback. This review describes in detail the feedback mechanisms, and presents recent progress in self-consistent calculations of the coupled dynamics. We pay special attention to three representative examples, where the feedback generates non-local effective interactions for the magnetization. Possibly the most dramatic feedback example is the dynamic instability in magnetic nanopillars with a single magnetic layer. This instability does not occur without non-local feedback. We demonstrate that full self-consistent calculations generate simulation results in much better agreement with experiments than previous calculations that addressed the feedback effect approximately. The next example is for more typical spin valve nanopillars. Although the effect of feedback is less dramatic because even without feedback the current can induce magnetization oscillation, the feedback can still have important consequences. For instance, we show that the feedback can reduce the linewidth of oscillations, in agreement with experimental observations. Finally, we consider nonadiabatic electron transport in narrow domain walls. The non-local feedback in these systems leads to a significant renormalization of the effective nonadiabatic spin transfer torque.

cond-mat.mtrl-sci↗

arXiv2013

Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect

We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that, in the high damping regime, the threshold switching current is independent of the damping constant, and is almost linearly proportional to both effective perpendicular magnetic anisotropy field and external in-plane field applied along the current direction. We obtain an analytic expression of the threshold current, in excellent agreement with numerical results. This expression can be used to determine the physical quantities associated with spin Hall effect, and to design relevant magnetic devices based on the switching of perpendicular magnetic layers.

cond-mat.mes-hall↗