Enhanced Superconductivity in Multilayer FeSe Films by Simplified Molecular Beam Epitaxy
Multi-unit-cell (UC) \b{eta}-FeSe films grown on SrTiO3(100) continue to attract attention because of the significant enhancement in the superconducting transition temperature (Tc) compared to that in bulk FeSe. In prior reports of molecular beam epitaxy (MBE)-grown \b{eta}-FeSe/SrTiO3(100), elaborate growth protocols have been used to achieve enhanced Tc, leading to a general belief that careful pre-treatment of the SrTiO3 substrate and post-growth annealing in ultrahigh vacuum (UHV) are essential. Here, we report a greatly simplified protocol for the MBE growth of superconducting multi-UC \b{eta}-FeSe films on SrTiO3(100), eliminating the need for careful substrate pre-treatment and post-growth UHV annealing while still achieving an enhanced Tc. With appropriate capping, epitaxial films with 14 UC thickness exhibit a zero-resistance transition temperature Tc ~ 20 K in ex situ electrical transport measurements. The MBE optimization process is guided by the growth-parameter dependencies of film morphology and structural properties, as characterized by reflection high-energy electron diffraction, X-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy.