arXiv subjects

Seongshik Oh

Publications and source records attributed to Seongshik Oh.

At least 37 records · Page 2Linked to original sources

arXiv2024

Signatures of Majorana Bound States in the Diffraction Patterns of Extended Superconductor-Topological Insulator-Superconductor Josephson Junctions

In an extended superconductor-topological insulator-superconductor (S-TI-S) Josephson junction in a magnetic field, localized Majorana bound states (MBS) are predicted to exist at the cores of Josephson vortices where the local phase difference across the junction is an odd-multiple of $π$. These states contribute a supercurrent with a $4π$-periodic current-phase relation (CPR) that adds to the conventional $2π$-periodic sinusoidal CPR. In this work, we present a comprehensive experimental study of the critical current vs. applied magnetic field diffraction patterns of lateral Nb-Bi$_2$Se$_3$-Nb Josephson junctions. We compare our observations to a model of the Josephson dynamics in the S-TI-S junction system to explore what feature of MBS are, or are not, exhibited in these junctions. Consistent with the model, we find several distinct deviations from a Fraunhofer diffraction pattern that is expected for a uniform sin$(ϕ)$ CPR. In particular, we observe abrupt changes in the diffraction pattern at applied magnetic fields in which the current-carrying localized MBS are expected to enter the junction, and a lifting of the odd-numbered nodes consistent with a $4π$-periodic sin$(ϕ/2)$-component in the CPR. We also see that although the even-numbered nodes often remain fully-formed, we sometimes see deviations that are consistent with quasiparticle-induced fluctuations in the parity of the MBS pairs that encodes quantum information.

cond-mat.supr-con↗

arXiv2024

Buffer-layer-controlled Nickeline vs Zinc-Blende/Wurtzite-type MnTe growths on c-plane Al2O3 substrates

In the recent past, MnTe has proven to be a crucial component of the intrinsic magnetic topological insulator (IMTI) family [MnTe]m[Bi2Te3]n, which hosts a wide range of magneto-topological properties depending on the choice of m and n. However, bulk crystal growth allows only a few combinations of m and n for these IMTIs due to the strict limitations of the thermodynamic growth conditions. One way to overcome this challenge is to utilize atomic layer-by-layer molecular beam epitaxy (MBE) technique, which allows arbitrary sequences of [MnTe]m and [Bi2Te3]n to be formed beyond the thermodynamic limit. For such MBE growth, finding optimal growth templates and conditions for the parent building block, MnTe, is a key requirement. Here, we report that two different hexagonal phases of MnTe-nickeline (NC) and zinc-blende/wurtzite (ZB-WZ) structures, with distinct in-plane lattice constants of 4.20 +/- 0.04 A and 4.39 +/- 0.04 A, respectively-can be selectively grown on c-plane Al2O3 substrates using different buffer layers and growth temperatures. Moreover, we provide the first comparative studies of different MnTe phases using atomic-resolution scanning transmission electron microscopy and show that ZB and WZ-like stacking sequences can easily alternate between the two. Surprisingly, In2Se3 buffer layer, despite its lattice constant (4.02 A) being closer to that of the NC phase, fosters the ZB-WZ instead, whereas Bi2Te3, sharing the same lattice constant (4.39 A) with the ZB-WZ phase, fosters the NC phase. These discoveries suggest that lattice matching is not always the most critical factor determining the preferred phase during epitaxial growth. Overall, this will deepen our understanding of epitaxial growth modes for chalcogenide materials and accelerate progress toward new IMTI phases as well as other magneto-topological applications.

cond-mat.mtrl-sci↗

arXiv2024

Electrodynamics of the quantum anomalous Hall state in a magnetically doped topological insulator

Magnetically doped topological insulators have been extensively studied over the past decade as a material platform to exhibit quantum anomalous Hall effect. Most material realizations are magnetically doped and despite material advances suffer from large disorder effects. In such systems, it is believed that magnetic disorder leads to a spatially varying Dirac mass gap and chemical potential fluctuations, and hence quantized conductance is only observed at very low temperatures. Here, we use a recently developed high-precision time-domain terahertz (THz) polarimeter to study the low-energy electrodynamic response of Cr-doped (Bi,Sb)$_2$Te$_3$ thin films. These films have been recently shown to exhibit a dc quantized anomalous Hall response up to T = 2 K at zero gate voltage. We show that the real part of the THz range Hall conductance $σ_{xy}(ω)$ is slightly smaller than $e^2/h$ down to T = 2 K with an unconventional decreasing dependence on frequency. The imaginary (dissipative) part of $σ_{xy}(ω)$ is small, but increasing as a function of omega. We connect both aspects of our data to a simple model for effective magnetic gap disorder. Our work highlights the different effect that disorder can have on the dc vs. ac quantum anomalous Hall effect.

cond-mat.mes-hall↗

arXiv2023

Emergent magnetism with continuous control in the ultrahigh conductivity layered oxide PdCoO2

The current challenge to realizing continuously tunable magnetism lies in our inability to systematically change properties such as valence, spin, and orbital degrees of freedom as well as crystallographic geometry. Here, we demonstrate that ferromagnetism can be externally turned on with the application of low-energy helium implantation and subsequently erased and returned to the pristine state via annealing. This high level of continuous control is made possible by targeting magnetic metastability in the ultra-high conductivity, non-magnetic layered oxide PdCoO2 where local lattice distortions generated by helium implantation induce emergence of a net moment on the surrounding transition metal octahedral sites. These highly-localized moments communicate through the itinerant metal states which triggers the onset of percolated long-range ferromagnetism. The ability to continuously tune competing interactions enables tailoring precise magnetic and magnetotransport responses in an ultra-high conductivity film and will be critical to applications across spintronics.

cond-mat.mtrl-sci↗

arXiv2023

High temperature, gate-free quantum anomalous Hall effect with an active capping layer

Quantum anomalous Hall effect (QAHE) was discovered a decade ago, but is still not utilized beyond a handful of research groups, due to numerous limitations such as extremely low temperature, electric field-effect gating requirement, small sample sizes and environmental aging effect. Here, we present a robust platform that provides effective solutions to these problems. Specifically, on this platform, we observe QAH signatures at record high temperatures, with the Hall conductance of 1.00 e2/h at 2.0 K, 0.98 e2/h at 4.2 K, and 0.92 e2/h at 10 K, on centimeter-scale substrates, without electric-field-effect gating. The key ingredient is an active CrOx capping layer, which substantially boosts the ferromagnetism while suppressing environmental degradation. With this development, QAHE will now be accessible to much broader applications than before.

cond-mat.mes-hall↗

arXiv2023

Thickness-dependent, tunable anomalous Hall effect in hydrogen-reduced PdCoO$_2$ thin films

It was recently reported that hydrogen-reduced PdCoO$_2$ films exhibit strong perpendicular magnetic anisotropy (PMA) with sign tunable anomalous Hall effect (AHE). Here, we provide extensive thickness-dependent study of this system, and show that the electronic and magnetic properties are strongly dependent on the thickness and annealing conditions. Below a critical thickness of 25 nm, AHE shows clear PMA with hysteresis, and its sign changes from positive to negative, and back to positive as the annealing temperature increases from 100 $^\circ$C to 400 $^\circ$C. Beyond the critical thickness, both PMA and AHE hysteresis disappear and the AHE sign remains positive regardless of the annealing parameters. Our results show that PMA may have a large role on AHE sign-tunability and that below the critical thickness, competition between different AHE mechanisms drives this sign change.

cond-mat.mtrl-sci↗

arXiv2023

Interaction of in-plane Drude carrier with c-axis phonon in $\rm PdCoO_2$

We performed polarized reflection and transmission measurements on the layered conducting oxide $\rm PdCoO_2$ thin films. For the ab-plane, an optical peak near $Ω$ $\approx$ 750 cm$^{-1}$ drives the scattering rate $γ^{*}(ω)$ and effective mass $m^{*}(ω)$ of the Drude carrier to increase and decrease respectively for $ω$ $\geqq$ $Ω$. For the c-axis, a longitudinal optical phonon (LO) is present at $Ω$ as evidenced by a peak in the loss function Im[$-1/\varepsilon_{c}(ω)$]. Further polarized measurements in different light propagation (q) and electric field (E) configurations indicate that the Peak at $Ω$ results from an electron-phonon coupling of the ab-plane carrier with the c-LO phonon, which leads to the frequency-dependent $γ^{*}(ω)$ and $m^{*}(ω)$. This unusual interaction was previously reported in high-temperature superconductors (HTSC) between a non-Drude, mid-infrared band and a c-LO. On the contrary, it is the Drude carrier that couples in $\rm PdCoO_2$. The coupling between the ab-plane Drude carrier and c-LO suggests that the c-LO phonon may play a significant role in the characteristic ab-plane electronic properties of $\rm PdCoO_2$ including the ultra-high dc-conductivity, phonon-drag, and hydrodynamic electron transport.

cond-mat.mtrl-sci↗

arXiv2022

Diffusion-assisted molecular beam epitaxy of CuCrO$_2$ thin films

Using molecular beam epitaxy (MBE) to grow multi-elemental oxides (MEO) is generally challenging, partly due to difficulty in stoichiometry control. Occasionally, if one of the elements is volatile at the growth temperature, stoichiometry control can be greatly simplified using adsorption-controlled growth mode. Otherwise, stoichiometry control remains one of the main hurdles to achieving high quality MEO film growths. Here, we report another kind of self-limited growth mode, dubbed diffusion-assisted epitaxy, in which excess species diffuses into the substrate and leads to the desired stoichiometry, in a manner similar to the conventional adsorption-controlled epitaxy. Specifically, we demonstrate that using diffusion-assisted epitaxy, high-quality epitaxial CuCrO$_2$ films can be grown over a wide growth window without precise flux control using MBE.

cond-mat.mtrl-sci↗

arXiv2022

Disorder-enhanced effective masses and deviations from Matthiessen's rule in PdCoO$_2$ thin films

The observation of hydrodynamic transport in the metallic delafossite PdCoO$_2$ has increased interest in this family of highly conductive oxides, but experimental studies so far have mostly been confined to bulk crystals. In this work, the development of high-quality thin films of PdCoO$_2$ has enabled a thorough study of the conductivity as a function of film thickness using both dc transport and time-domain THz spectroscopy. With increasing film thickness from 12 nm to 102 nm, the residual resistivity decreases and we observe a large deviation from Matthiessen's rule (DMR) in the temperature dependence of the resistivity. We find that the complex THz conductivity is well fit by a single Drude term. We fit the data to extract the spectral weight and scattering rate simultaneously. The temperature dependence of the Drude scattering rate is found to be nearly independent of the residual resistivity and cannot be the primary mechanism for the observed DMR. Rather, we observe large changes in the spectral weight as a function of disorder, changing by a factor of 1.5 from the most disordered to least disordered films. We believe this corresponds to a mass enhancement of $\geq 2$ times the value of the bulk effective mass which increases with residual disorder. This suggests that the mechanism behind the DMR observed in dc resistivity is primarily driven by changes in the electron mass. We discuss the possible origins of this behavior including the possibility of disorder-enhanced electron-phonon scattering, which can be systematically tuned by film thickness.

cond-mat.str-el↗

arXiv2022

Monolayer superconductivity and tunable topological electronic structure at the Fe(Te,Se)/Bi2Te3 interface

The interface between two-dimensional topological Dirac states and an s-wave superconductor is expected to support Majorana bound states that can be used for quantum computing applications. Realizing these novel states of matter and their applications requires control over superconductivity and spin-orbit coupling to achieve spin-momentum locked topological surface states which are simultaneously superconducting. While signatures of Majorana bound states have been observed in the magnetic vortex cores of bulk FeTe0.55Se0.45, inhomogeneity and disorder from doping makes these signatures unclear and inconsistent between vortices. Here we report superconductivity in monolayer FeTe1-ySey (Fe(Te,Se)) grown on Bi2Te3 by molecular beam epitaxy. Spin and angle resolved photoemission spectroscopy directly resolve the interfacial spin and electronic structure of Fe(Te,Se)/Bi2Te3 heterostructures. We find that for y = 0.25 the Fe(Te,Se) electronic structure overlaps with the topological Bi2Te3 interfacial states which disrupts the desired spin-momentum locking. In contrast, for y = 0.1 a smaller Fe(Te,Se) Fermi surface allows for clear spin-momentum locking observed in the topological states. Hence, we demonstrate the Fe(Te,Se)/Bi2Te3 system is a highly tunable platform for realizing Majorana bound states where reduced doping can improve characteristics important for Majorana interrogation and potential applications.

cond-mat.supr-con↗

arXiv2022

Superconducting four-fold Fe(Te,Se) film on six-fold magnetic MnTe via hybrid symmetry epitaxy

Epitaxial Fe(Te,Se) thin films have been grown on various substrates but never been realized on magnetic layers. Here we report the epitaxial growth of four-fold Fe(Te,Se) film on a six-fold antiferromagnetic insulator, MnTe. The Fe(Te,Se)/MnTe heterostructure shows a clear superconducting transition at around 11 K and the critical magnetic field measurement suggests the origin of the superconductivity to be bulk-like. Structural characterizations suggest that the uniaxial lattice match between Fe(Te,Se) and MnTe allows a hybrid symmetry epitaxy mode, which was recently discovered between Fe(Te,Se) and Bi2Te3. Furthermore, Te/Fe flux ratio during deposition of the Fe(Te,Se) layer is found to be critical for its superconductivity. Now that superconducting Fe(Te,Se) can be grown on two related hexagonal platforms, Bi2Te3 and MnTe, this result opens a new possibility of combining topological superconductivity of Fe(Te,Se) with the rich physics in the intrinsic magnetic topological materials (MnTe)n(Bi2Te3)m family.

cond-mat.supr-con↗

arXiv2022

A new type of cyclotron resonance from charge-impurity scattering in the bulk-insulating Bi$_2$Se$_3$ thin films

This work focuses on the low frequency Drude response of bulk-insulating topological insulator Bi$_2$Se$_3$ films. The frequency and field dependence of the mobility and carrier density are measured simultaneously via time-domain terahertz spectroscopy. These films are grown on buffer layers, capped by Se, and have been exposed in air for months. Under a magnetic field up to 7 Tesla, we observe prominent cyclotron resonances (CRs). We attribute the sharp CR to two different topological surface states (TSSs) from both surfaces of the films. The CR sharpens at high fields due to an electron-impurity scattering. By using magneto-terahertz spectroscopy, we confirm that these films are bulk-insulating, which paves the way to use intrinsic topological insulators without bulk carriers for applications including topological spintronics and quantum computing.

cond-mat.mtrl-sci↗

arXiv2022

Anomalous Hall effect in electrolytically reduced PdCoO$_2$ thin films

PdCoO$_2$, being highly conductive and anisotropic, is a promising material for fundamental and technological applications. Recently, reduced PdCoO$_2$ thin films were shown to exhibit ferromagnetism after hydrogen annealing. Here, we demonstrate that when PdCoO$_2$ film is used as a cathode for dissociation of water, hydrogen generated around the film reduces the material and leads to the emergence of anomalous Hall effect (AHE). Moreover, we demonstrate that the sign of the AHE signal can also be changed with the electrolytic process. Electrolytically-modified PdCoO$_2$ films may open a door to applications in spintronics.

cond-mat.mtrl-sci↗

arXiv2021

From classical to quantum regime of topological surface states via defect engineering

Since the notion of topological insulator (TI) was envisioned in late 2000s, topology has become a new paradigm in condensed matter physics. Realization of topology as a generic property of materials has led to numerous predictions of topological effects. Although most of the classical topological effects, directly resulting from the presence of the spin-momentum-locked topological surface states (TSS), were experimentally confirmed soon after the theoretical prediction of TIs, many topological quantum effects remained elusive for a long while. It turns out that native defects, particularly interfacial defects, have been the main culprit behind this impasse. Even after quantum regime is achieved for the bulk states, TSS still tends to remain in the classical regime due to high density of interfacial defects, which frequently donate mobile carriers due to the very nature of the topologically-protected surface states. However, with several defect engineering schemes that suppress these effects, a series of topological quantum effects have emerged including quantum anomalous Hall effect, quantum Hall effect, quantized Faraday/Kerr rotations, topological quantum phase transitions, axion insulating state, zeroth-Landau level state, etc. Here, we review how these defect engineering schemes have allowed topological surface states to pull out of the murky classical regime and reveal their elusive quantum signatures, over the past decade.

cond-mat.mtrl-sci↗

arXiv2021

Suppressing carrier density in (BixSb1-x)2Te3 films using Cr2O3 interfacial layers

Band structure engineering and interfacial buffer layers have been demonstrated as effective means to tune the Fermi level in topological insulators (TI). In particular, the charge compensated compound (BixSb1-x)2Te3 (BST) plays a critical role in the molecular beam epitaxy growth of magnetic TIs. Here we introduce a strategy of exploiting epitaxial Cr2O3 as a buffer layer and amorphous Cr2O3 as a capping layer in the growth of BST films. These films exhibit carrier density lower than 1012/cm2 over a wide range of Bi contents and higher mobility than BST films directly grown on Al2O3 substrate, shedding light on the importance of interfacial layers for TI films and paving a new avenue to the application of magnetic BST films.

cond-mat.mtrl-sci↗

arXiv2021

Hybrid symmetry epitaxy of superconducting Fe(Te,Se) film on a topological insulator

It is challenging to grow an epitaxial four-fold compound superconductor (SC) on six-fold topological insulator (TI) platform due to stringent lattice-matching requirement. Here, we demonstrate that Fe(Te,Se) can grow epitaxially on a TI (Bi2Te3) layer due to accidental, uniaxial lattice match, which is dubbed as "hybrid symmetry epitaxy". This new growth mode is critical to stabilizing robust superconductivity with TC as high as 13 K. Furthermore, the superconductivity in this FeTe1-xSex/Bi2Te3 system survives in Te-rich phase with Se content as low as x = 0.03 but vanishes at Se content above x = 0.56, exhibiting a phase diagram that is quite different from that of the conventional Fe(Te,Se) systems. This unique heterostructure platform that can be formed in both TI-on-SC and SC-on-TI sequences opens a route to unprecedented topological heterostructures.

cond-mat.supr-con↗

arXiv2021

Spacer-layer-tunable magnetism and high-field topological Hall effect in topological insulator heterostructures

Controlling magnetic order in magnetic topological insulators (MTIs) is a key to developing spintronic applications with MTIs, and is commonly achieved by changing the magnetic doping concentration, which inevitably affects spin-orbit-coupling strength and the very topological properties. Here, we demonstrate tunable magnetic properties in topological heterostructures over a wide range, from a ferromagnetic phase with Curie temperature of around 100 K all the way to a paramagnetic phase, while keeping the overall chemical composition the same, by controlling the thickness of non-magnetic spacer layers between two atomically-thin magnetic layers. This work showcases that spacer-layer control is a powerful tool to manipulate magneto-topological functionalities in MTI heterostructures. Furthermore, the interaction between the MTI and the Cr2O3 buffer layers also led to robust topological Hall effect surviving up to a record-high 6 T of magnetic field, shedding light on the critical role of interfacial layers in thin film topological materials.

cond-mat.mes-hall↗

arXiv2021

Layer-Resolved Many-Electron Interactions in Delafossite PdCoO2 from Standing-Wave Photoemission Spectroscopy

When a three-dimensional material is constructed by stacking different two-dimensional layers into an ordered structure, new and unique physical properties can emerge. An example is the delafossite PdCoO2, which consists of alternating layers of metallic Pd and Mott-insulating CoO2 sheets. To understand the nature of the electronic coupling between the layers that gives rise to the unique properties of PdCoO2, we revealed its layer-resolved electronic structure combining standing-wave X-ray photoemission spectroscopy and ab initio many-body calculations. Experimentally, we have decomposed the measured valence band spectrum into contributions from Pd and CoO2 layers. Computationally, we find that many-body interactions in Pd and CoO2 layers are highly different. Holes in the CoO2 layer interact strongly with charge-transfer excitons in the same layer, whereas holes in the Pd layer couple to plasmons in the Pd layer. Interestingly, we find that holes in states hybridized across both layers couple to both types of excitations (charge-transfer excitons or plasmons), with the intensity of photoemission satellites being proportional to the projection of the state onto a given layer. This establishes satellites as a sensitive probe for inter-layer hybridization. These findings pave the way towards a better understanding of complex many-electron interactions in layered quantum materials.

cond-mat.mtrl-sci↗