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Sergey Shchanikov

Publications and source records attributed to Sergey Shchanikov.

3 recordsLinked to original sources

Dual-Timescale Memory in a Spiking Neuron-Astrocyte Network for Efficient Navigation

Biological agents navigate complex environments by combining long-term memory of successful actions with short-term suppression of recently visited locations-a capability that remains difficult to replicate in artificial systems, especially under partial observability. Inspired by the complementary timescales of neural and astrocytic dynamics, we introduce a spiking neuron-astrocyte network (SNAN) where spike-timing-dependent plasticity (STDP) reinforces successful action sequences on a distant time scale, while astrocytic calcium transients suppress recently visited states on a short-term time scale, effectively blocking locations already explored. This dual-timescale memory mechanism biases the agent toward unexplored regions, accelerating goal finding without requiring explicit global statistics. We show that in grid-world navigation tasks with extreme partial observability, SNAN reduces median path length by up to sixfold and drastically improves goal completion rates compared to baseline agents. The astrocytic modulation inherently mitigates the exploration-exploitation trade-off as an emergent consequence of local state suppression. This kind of local sensory data modulation can be considered as a new type of working memory referred to as a "Topological-Context Memory". To validate hardware feasibility using neuromorphic approaches, we map STDP to a memristive VTEAM model and implement a subset of the network on a crossbar array, achieving order-of-magnitude gains in speed per area and energy per decision over CPU implementations. Our results establish astrocyte-inspired dual-timescale memory as a scalable, hardware-realizable principle for neuromorphic robotics and edge-AI systems.

q-bio.QM

Neuropunk Revolution. Hacking Cognitive Systems towards Cyborgs 3.0

This work is dedicated to the review and perspective of the new direction that we call "Neuropunk revolution" resembling the cultural phenomenon of cyberpunk. This new phenomenon has its foundations in advances in neuromorphic technologies including memristive and bio-plausible simulations, BCI, and neurointerfaces as well as unconventional approaches to AI and computing in general. We present the review of the current state-of-the-art and our vision of near future development of scientific approaches and future technologies. We call the "Neuropunk revolution" the set of trends that in our view provide the necessary background for the new generation of approaches technologies to integrate the cybernetic objects with biological tissues in close loop system as well as robotic systems inspired by the biological processes again integrated with biological objects. We see bio-plausible simulations implemented by digital computers or spiking networks memristive hardware as promising bridge or middleware between digital and (neuro)biological domains.

cs.ET

Design and Simulation of Memristor-Based Artificial Neural Network for Bidirectional Adaptive Neural Interface

This article proposes a general approach to the simulation and design of a multilayer perceptron (MLP) network on the basis of cross-bar arrays of metal-oxide memristive devices. The proposed approach uses the ANNM theory, tolerance theory, simulation methodology and experiment design. The tolerances analysis and synthesis process is performed for the ANNM hardware implementation on the basis of two arrays of memristive microdevices in the original 16x16 cross-bar topology being a component of bidirectional adaptive neural interface for automatic registration and stimulation of bioelectrical activity of a living neuronal culture used in robotics control system. The ANNM is trained for solving a nonlinear classification problem of stable information characteristics registered in the culture grown on a multi-electrode array. Memristive devices are fabricated on the basis of a newly engineered Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti multilayer structure, which contains self-organized interface oxide layers, nanocrystals and is specially developed to obtain robust resistive switching with low variation of parameters. An array of memristive devices is mounted into a standard metal-ceramic package and can be easily integrated into the neurointerface circuit. Memristive devices demonstrate bipolar switching of anionic type between the high-resistance state and low-resistance state and can be programmed to set the intermediate resistive states with a desired accuracy. The ANNM tuning, testing and control are implemented by the FPGA-based control subsystem. All developed models and algorithms are implemented as Python-based software.

cs.ET