arXiv subjects

Serhii Kryvyi

Publications and source records attributed to Serhii Kryvyi.

6 recordsLinked to original sources

arXiv2026

Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations

Previous studies of the growth of two-dimensional (2D) gallium selenide (GaSe) by molecular beam epitaxy (MBE) on a gallium arsenide (GaAs) three-dimensional (3D) substrate have reported significant differences in growth morphology, polytype, and the nature of the interface. The results differ, ranging from GaSe 2D film growth at tilted 2D planes to observed spiral structures, thereby calling for a deeper understanding of the impact of the substrate interface on the growth of GaSe films. In this paper, we conduct a comprehensive reexamination of the growth mechanism of GaSe on GaAs substrates with (211)B and (001)B orientations, investigating the nature of the 2D/3D interface and the resulting morphology of the 2D GaSe films. We do this by investigating different methods of preparation of the GaAs substrate surface before the growth of GaSe by MBE, the importance of which has not been considered before. Our results resolve the mechanistic origin of tilted versus non-tilted 2D growth and establish a general interface-driven orientation selection rule linking substrate symmetry and dangling-bond coordination to layered heteroepitaxy. This framework provides a scalable interface-engineering pathway for deterministic control of layered chalcogenide heterostructures and enables wafer-scale integration with established semiconductor device platforms.

cond-mat.mtrl-sci↗

arXiv2026

Canonical Byte-String Encoding for Finite-Ring Cryptosystems

Ring-mapping protocols need a canonical byte-to-residue layer before any algebraic encryption step can begin. This paper isolates that layer and presents the base-m length codec, a canonical map from byte strings of length less than 2^64 to lists of residues modulo m. The encoder builds on and adapts an rANS-based system proposed by Duda. Decoding is exact for all moduli satisfying the paper's parameter bounds. Because the encoding carries the byte length in its fixed-width header, decoding is also tolerant to appended valid suffix digits. The paper is accompanied by a Rust implementation of the described protocol, a Lean 4 formalization of the abstract codec with machine-checked proofs, and performance benchmarks. The Lean 4 formalization establishes fixed-width prefix inversion and payload-state bounds below 2^64, stream-level roundtrip correctness, and that every emitted symbol is a valid residue modulo m. We conclude with a complexity analysis and a discussion of practical considerations arising in real-world use of the codec.

cs.CR↗

arXiv2025

Large Negative Magnetoresistance in Antiferromagnetic Gd2Se3

Rare earth chalcogenides provide a great platform to study exotic quantum phenomena such as superconductivity and charge density waves. Among various interesting properties, the coupling between magnetism and electronic transport has attracted significant attention. Here, we report the investigation of such coupling in {alpha}-Gd2Se3 single crystals through magnetic, calorimetric, and transport property measurements. {alpha}-Gd2Se3 is found to display an antiferromagnetic ground state below 11 K with metamagnetic spin-flop transitions. The magnetic fluctuations remain strong above the transition temperature. Transport measurements reveal an overall metallic transport behavior with a large negative magnetoresistance of ~ 65% near the magnetic transition temperature, together with positive MR near the field-induced spin-flop transitions, which can be understood in terms of the suppression of spin scattering by the magnetic field.

cond-mat.mtrl-sci↗

arXiv2024

Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy

The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16 % on GaAs (001) substrates via molecular beam epitaxy. Within we demonstrate composition targeting and logarithmic gradients to achieve linearly graded pseudomorph Ge1-xSnx compositions up to 10 % before partial relaxation of the structure and a continued gradient up to 16 % GeSn. In this report, we use X-ray diffraction, simulation, SIMS and atomic force microscopy to analyze and demonstrate some of the possible growths that can be produced with the enclosed algorithm. This methodology of growth is a major step forward in the field of GeSn development and the first demonstration of algorithmically driven, linearly graded GeSn films.

cond-mat.mtrl-sci↗

arXiv2023

Reconstruction of three-dimensional strain field in an asymmetrical curved core-shell hetero-nanowire

Crystal orientation and strain mapping of an individual curved and asymmetrical core-shell hetero-nanowire is performed based on transmission electron microscopy. It relies on a comprehensive analysis of scanning nanobeam electron diffraction data obtained for 1.3 nm electron probe size. The proposed approach handles also the problem of appearing twinning defects on diffraction patterns and allows for investigation of materials with high defect densities. On the basis of the experimental maps and their comparison to finite element simulations, a hidden core-shell geometry and full three-dimensional strain distribution within the curved core-shell nanowire are obtained. As effect, a low-dose quasi-tomography data using only single zone axis diffraction experiment is received. Our approach is applicable also for electron beam sensitive materials for which performing conventional tomography is a difficult task.

cond-mat.mtrl-sci↗

arXiv2022

Bi Incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires

Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio ~ 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments.

cond-mat.mtrl-sci↗