arXiv subjects

Servet Ozdemir

Publications and source records attributed to Servet Ozdemir.

10 recordsLinked to original sources

arXiv2026

Observation of single antiferromagnetic magnon modes through tunnelling spectroscopy of spin-1/2 Kitaev system a-RuCl3

The small-gap room-temperature semiconductor a-RuCl3, which is known to undergo a Mott-Hubbard transition at low temperatures, is one of the most promising candidates for realisation of an exotic matter form, the quantum spin liquid state, which may have applications in quantum computing. Although extensively investigated by neutron scattering techniques, electronic study of this system in the form of van der Waals heterostructures has been limited mainly to graphene proximity. Here we report a systematic study of planar and tunnelling electronic properties of a-RuCl3 films, where we observe an n-type field effect on a-RuCl3 films at room temperature, with a Mott insulator nature onset below 120 K. For films of three-layer thickness and below we find inelastic scattering features, below the Néel temperature of 7-14.5 K, which we attribute to single magnon modes. Our study confirms preserved low-temperature signatures of the zigzag antiferromagnetic order in the atomically thin limit and its single magnon modes within the continuum through tunnelling spectroscopy.

cond-mat.mes-hall↗

arXiv2026

Probing frustrated metallo-molecular spin Kondo lattice interfaces through anomalous Nernst effect

Frustrated Kondo spin lattice (KSL) systems away from the antiferromagnetic (AFM) ground state have been found to display strange metal behaviour. A signature of strange metals in correlated systems is large Nernst response. Metallo-molecular interfaces of supramolecular lattices have been demonstrated as 2D KSL systems in STM studies. Here going beyond STM experiments we report a frustrated AFM state on molecular interfaces of Pt(111) and Pt(111)/Co films with around room temperature spin freezing transitions. Near these transitions we measure an anomalous Nernst coefficient of at least 3 $μ$V/K.

cond-mat.str-el↗

arXiv2025

Low-energy, ultrafast spin reorientation at competing hybrid interfaces with tunable operating temperature

Information can be stored in magnetic materials by encoding with the direction of the magnetic moment of elements. A figure of merit for these systems is the energy needed to change the information rewrite the storage by changing the magnetic moment. Organic molecules offer a playground to manipulate spin order, with metallo molecular interfaces being a promising direction for sustainable devices. Here, we demonstrate a spin reorientation transition in molecular interfaces of high magnetisation 3d ferromagnetic films due to a competition between a perpendicular magnetic anisotropy (PMA) induced by a heavy metal that dominates at high temperatures, and an in-plane anisotropy generated by molecular coupling at low temperatures. The transition can be tuned around room temperature by varying the ferromagnet thickness (1.4 to 1.9 nm) or the choice of molecular overlayer, with the organic molecules being C60, hydrogen and metal (Cu, Co) phthalocyanines. Near the transition temperature, the magnetisation easy axis can be switched with a small energy input, either electrically with a current density of 10^5 A per cm2, or optically by a fs laser pulse of fluence as low as 0.12 mJ per cm2, suggesting heat assisted technology applications. Magnetic dichroism measurements point toward a phase transition at the organic interface being responsible for the spin reorientation transition.

cond-mat.mes-hall↗

arXiv2024

Optical contrast analysis of α-RuCl$_3$ nanoflakes on oxidized silicon wafers

α-RuCl$_3$, a narrow-band Mott insulator with large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl$_3$ nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of α-RuCl$_3$ nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of α-RuCl$_3$ nanoflakes with thicknesses below 100 nm on SiO$_2$/Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from optical microscopy images and obtain good agreement. Finally, we show that optical contrast imaging allows us to retrieve the thickness of the RuCl$_3$ nanoflakes exfoliated on an oxidized silicon substrate with a mean deviation of -0.2 nm for thicknesses below 100 nm with a standard deviation of only 1 nm. Our results demonstrate that optical contrast can be used as a non-invasive, fast, and reliable technique to estimate the α-RuCl$_3$ thickness.

cond-mat.mtrl-sci↗

arXiv2019

Electronic phase separation in topological surface states of rhombohedral graphite

Of the two stable forms of graphite, hexagonal (HG) and rhombohedral (RG), the former is more common and has been studied extensively. RG is less stable, which so far precluded its detailed investigation, despite many theoretical predictions about the abundance of exotic interaction-induced physics. Advances in van der Waals heterostructure technology have now allowed us to make high-quality RG films up to 50 graphene layers thick and study their transport properties. We find that the bulk electronic states in such RG are gapped and, at low temperatures, electron transport is dominated by surface states. Because of topological protection, the surface states are robust and of high quality, allowing the observation of the quantum Hall effect, where RG exhibits phase transitions between gapless semimetallic phase and gapped quantum spin Hall phase with giant Berry curvature. An energy gap can also be opened in the surface states by breaking their inversion symmetry via applying a perpendicular electric field. Moreover, in RG films thinner than 4 nm, a gap is present even without an external electric field. This spontaneous gap opening shows pronounced hysteresis and other signatures characteristic of electronic phase separation, which we attribute to emergence of strongly-correlated electronic surface states.

cond-mat.mes-hall↗

arXiv2019

Stacking Order in Graphite Films Controlled by Van der Waals Technology

In graphite crystals, layers of graphene reside in three equivalent, but distinct, stacking positions typically referred to as A, B, and C projections. The order in which the layers are stacked defines the electronic structure of the crystal, providing an exciting degree of freedom which can be exploited for designing graphitic materials with unusual properties including predicted high-temperature superconductivity and ferromagnetism. However, the lack of control of the stacking sequence limits most research to the stable ABA form of graphite. Here we demonstrate a strategy to control the stacking order using van der Waals technology. To this end, we first visualise the distribution of stacking domains in graphite films and then perform directional encapsulation of ABC-rich graphite crystallites with hexagonal boron nitride (hBN). We found that hBN-encapsulation which is introduced parallel to the graphite zigzag edges preserves ABC stacking, while encapsulation along the armchair edges transforms the stacking to ABA. The technique presented here should facilitate new research on the important properties of ABC graphite.

cond-mat.mes-hall↗

arXiv2019

Stacking transition in rhombohedral graphite

Few layer graphene (FLG) has been recently intensively investigated for its variable electronic properties defined by a local atomic arrangement. While the most natural layers arrangement in FLG is ABA (Bernal) stacking, a metastable ABC (rhombohedral) stacking characterized by a relatively high energy barrier can also occur. When both stacking occur in the same FLG device this results in in-plane heterostructure with a domain wall (DW). We show that ABC stacking in FLG can be controllably and locally turned into ABA stacking by two following approaches. In the first approach, Joule heating was introduced and the transition was characterized by 2D-peak Raman spectra at a submicron spatial resolution. The observed transition was initiated at a small region and then the DW controllably shifted until the entire device became ABA stacked. In the second approach, the transition was achieved by illuminating the ABC region with a train of laser pulses of 790 nm wavelength, while the transition was visualized by transmission electron microscopy in both diffraction and dark field modes. Also, with this approach, a DW was visualized in the dark-field imaging mode, at a nanoscale spatial resolution.

cond-mat.mes-hall↗

arXiv2019

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices.

cond-mat.mes-hall↗

arXiv2018

Dimensional reduction, quantum Hall effect and layer parity in graphite films

The quantum Hall effect (QHE) originates from discrete Landau levels forming in a two-dimensional (2D) electron system in a magnetic field. In three dimensions (3D), the QHE is forbidden because the third dimension spreads Landau levels into multiple overlapping bands, destroying the quantisation. Here we report the QHE in graphite crystals that are up to hundreds of atomic layers thick - thickness at which graphite was believed to behave as a 3D bulk semimetal. We attribute the observation to a dimensional reduction of electron dynamics in high magnetic fields, such that the electron spectrum remains continuous only in the direction of the magnetic field, and only the last two quasi-one-dimensional (1D) Landau bands cross the Fermi level. In sufficiently thin graphite films, the formation of standing waves breaks these 1D bands into a discrete spectrum, giving rise to a multitude of quantum Hall plateaux. Despite a large number of layers, we observe a profound difference between films with even and odd numbers of graphene layers. For odd numbers, the absence of inversion symmetry causes valley polarisation of the standing-wave states within 1D Landau bands. This reduces QHE gaps, as compared to films of similar thicknesses but with even layer numbers because the latter retain the inversion symmetry characteristic of bilayer graphene. High-quality graphite films present a novel QHE system with a parity-controlled valley polarisation and intricate interplay between orbital, spin and valley states, and clear signatures of electron-electron interactions including the fractional QHE below 0.5 K.

cond-mat.mes-hall↗

arXiv2017

Graphene hot-electron light bulb: incandescence from hBN-encapsulated graphene in air

The excellent electronic and mechanical properties of graphene allow it to sustain very large currents, enabling its incandescence through Joule heating in suspended devices. Although interesting scientifically and promising technologically, this process is unattainable in ambient environment, because graphene quickly oxidises at high temperatures. Here, we take the performance of graphene-based incandescent devices to the next level by encapsulating graphene with hexagonal boron nitride (hBN). Remarkably, we found that the hBN encapsulation provides an excellent protection for hot graphene filaments even at temperatures well above 2000 K. Unrivalled oxidation resistance of hBN combined with atomically clean graphene/hBN interface allows for a stable light emission from our devices in atmosphere for many hours of continuous operation. Furthermore, when confined in a simple photonic cavity, the thermal emission spectrum is modified by a cavity mode, shifting the emission to the visible range spectrum. We believe our results demonstrate that hBN/graphene heterostructures can be used to conveniently explore the technologically important high-temperature regime and to pave the way for future optoelectronic applications of graphene-based systems.

cond-mat.mes-hall↗