arXiv subjects

Seul-Ki Bac

Publications and source records attributed to Seul-Ki Bac.

7 recordsLinked to original sources

arXiv2026

Disorder-driven symmetry suppression by van der Waals planar defects in a magnetic topological insulator

Magnetic topological insulators offer a platform to control electronic topology through magnetic order, yet reliable routes to tune their properties remain limited. Here, we show that ion irradiation allows to modify the magnetic and the topological properties of the van der Waals magnetic topological insulator MnBi$_2$Te$_4$. Using inert ion beams, intrinsic defects are introduced via collision cascades without chemical doping. We identify two distinct regimes. At low fluence, cation antisite disorder leads to a near-complete redistribution of Bi over cation sites while preserving long-range crystallographic order, accompanied by a transition from $p$-type to $n$-type transport. At high fluence, cation-anion intermixing drives the formation of a previously unreported layer-disordered phase characterized by a high density of van der Waals-specific planar defects, including swapped bilayers. Despite significant structural disorder, the system retains partial periodic order up to high displacement levels. Magnetometry and X-ray spectroscopy show that the Mn high-spin state and antiferromagnetic interactions persist, while magnetic anisotropy is strongly reduced. At the same time, the anomalous Hall conductivity is suppressed fivefold, far exceeding the change in magnetization, indicating a direct modification of Berry curvature. These results establish ion irradiation as a means to tune topology through defect engineering and reveal a disorder-driven approach to control symmetry and electronic structure in van der Waals magnetic materials.

cond-mat.mtrl-sci↗

arXiv2025

Spectral analysis of the magneto-optical response in valley polarized Pb$_{1-x}$Sn$_x$Se

Since the last century, considerable efforts have been devoted to the study of valley-degenerate narrow gap semiconductors, such as the Pb$_{1-x}$Sn$_x$Se alloy. This material possesses band edges at the $L$-points of their Brillouin zone, yielding a valley degeneracy of four. However, in (111)-oriented films, it is still not fully understood how differences between the longitudinal valley, oriented along the growth axis, and the oblique valleys, oriented at an angle with respect to that axis, appear in infrared magneto-optical spectroscopy. In this work, we report a magneto-optical study on this family of alloys, focusing on an anomaly in the interband transition of the absorption strength ratio between longitudinal and oblique valleys under a magnetic field applied along the [111] direction. Based on the Mitchell-Wallis model, we provide a theoretical fit for the experimental transmission data, which quantitatively explains the spectral shape of the data at magnetic fields as high as 35T. In particular, we attribute this anomalous absorption strength variation to the carrier density difference between the two types of valleys as well as the field-dependent multiple-beam interference or the Fabry-Pérot interference. Our analysis also allows for the extraction of the real and imaginary parts of the dielectric function.

cond-mat.mes-hall↗

arXiv2024

Probing Berry curvature in magnetic topological insulators through resonant infrared magnetic circular dichroism

Probing the quantum geometry and topology in condensed matter systems has relied heavily on static electronic transport experiments in magnetic fields. Yet, contact-free optical measurements have rarely been explored. Magnetic dichroism (MCD), the nonreciprocal absorption of circular polarized light, was theoretically linked to the quantized anomalous Hall effect in magnetic insulators and can identify the bands and momenta responsible for the underlying Berry Curvature (BC). Detecting BC through MCD faces two challenges: First, the relevant inter-band transitions usually generate MCD in the infrared (IR) range, requiring large samples with high quality. Second, while most magnetic materials are metallic, the relation between MCD and BC in metals remains unclear. Here, we report the observation of MCD in the IR range along with the anomalous Hall effect in thin film MnBi2Te4. Both phenomena emerge with a field-driven phase transition from an antiferromagnet to a canted ferromagnet. By theoretically relating the MCD to the anomalous Hall effect via BC in a metal, we show that this transition accompanies an abrupt onset of BC, signaling a topological phase transition from a topological insulator to a doped Chern insulator. Our density functional theory calculation suggests the MCD signal mainly originates from an optical transition at the Brillouin zone edge, hinting at a potential new source of BC away from the commonly considered Γ point. Our findings demonstrate a novel experimental approach for detecting BC and identifying the responsible bands and momenta, generally applicable to magnetic materials.

cond-mat.mes-hall↗

arXiv2023

Energy gap of topological surface states in proximity to a magnetic insulator

Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized anomalous Hall effect and can allow the control of the magnetic state of the insulator in a spintronic device. In this work, we observe the energy gap of topological surface-states in proximity to a magnetic insulator using magnetooptical Landau level spectroscopy. We measure Pb1-xSnxSe/EuSe heterostructures grown by molecular beam epitaxy exhibiting a record mobility and low Fermi energy. Through temperature dependent measurements and theoretical calculations, we show this gap is likely due to quantum confinement and conclude that the magnetic proximity effect is weak in this system. This weakness is disadvantageous for the realization of the quantum anomalous Hall effect, but favorable for spintronic devices which require the preservation of spin-momentum locking at the Fermi level.

cond-mat.mes-hall↗

arXiv2021

Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films

Topological superconductors have attracted tremendous excitement as they are predicted to host Majorana zero modes that can be utilized for topological quantum computing. Candidate topological superconductor Sn1-xInxTe thin films (0<x<0.3) grown by molecular beam epitaxy and strained in the (111) plane are shown to host three coexisting quantum effects: localization, antilocalization and superconducting fluctuations above the critical temperature Tc. An analysis of the normal state magnetoresistance reveals these effects. Weak localization is consistently observed in superconducting samples, indicating that superconductivity originates dominantly from trivial valence band states that may be strongly spin-orbit split. A large enhancement of the conductivity is observed above Tc, indicating that quantum coherent quasiparticle effects coexist with superconducting fluctuations. Our results motivate a re-examination of the debated pairing symmetry of this material when subjected to quantum confinement and lattice strain.

cond-mat.supr-con↗

arXiv2021

Fermi level tuning and band alignment in Mn doped InAs/GaSb

InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band alignment of the system. The measurement of Shubnikov-de-Haas oscillations, cyclotron resonance, and a non-linear Hall effect in Mn-doped samples indicate the coexistence of a high mobility two-dimensional electron gas and a hole gas. Conversely, in undoped InAs/GaSb, pure-n-type transport is observed. We hypothesize that Mn acceptor levels can pin the Fermi energy near the valence band edge of InAs, far from the interface, which introduces a strong band bending to preserve the band offset at the InAs/GaSb interface. The realization of the QAHE in this structure will thus require a careful control of the band alignment to preserve topological insulating character.

cond-mat.mes-hall↗

arXiv2021

Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements reveal an abrupt and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found strong hysteresis for the antiferromagnetic-ferrimagnetic transition. An ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator.

cond-mat.mtrl-sci↗