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Seung Zeon Han

Publications and source records attributed to Seung Zeon Han.

2 recordsLinked to original sources

Precipitate phase selection and grain boundary morphology in Cu-Ni-Si-Mn alloys: A machine-learning interatomic potential study

Alloys inevitably contain interphase boundaries, whose energetics govern nucleation processes and precipitate morphology. In Cu-Ni-Si alloys, Mn addition markedly changes grain boundary (GB) precipitation behavior. While GB precipitation of stable Ni$_2$Si in Mn-free alloys is associated with degraded mechanical properties, Mn addition instead promotes film-shaped Mn$_6$Ni$_{16}$Si$_7$ (G-phase) precipitation, which is correlated improved mechanical properties. However, the atomic origin of the contrasting GB phase selection and morphology remains unclear. Here we perform machine-learning interatomic potential (MLIP) calculations to investigate the effect of interphase-boundary atomic structure on GB precipitates in Cu-Ni-Si alloys with and without Mn. The MLIP calculations reliably reproduce DFT-level energetics for interfacial bonding and microstructural configurations, and further predict that Mn addition favors GB precipitation of Mn$_6$Ni$_{16}$Si$_7$ rather than Ni$_2$Si. Experimentally, Mn-free alloys are observed to exhibit irregularly-shaped Ni$_2$Si precipitates with open-boundary-like Cu/Ni$_2$Si interfaces, whereas Mn-added alloys exhibit film-like G-phase at GBs. Large-scale atomistic interface calculations reveal that the coherent interface structure between Cu and Ni$_2$Si favors the formation of plate-like strained Ni$_2$Si precipitates in the matrix. Upon coarsening and stress release, an out-of-phase coherent-like interface can form at GBs, generating a local repulsive region that gives rise to surface-like open-boundary structures and explains the irregular morphology of GB stable Ni$_2$Si precipitates. In contrast, Cu/Mn$_6$Ni$_{16}$Si$_7$ interfaces remain predominantly incoherent with moderate boundary energies and no pronounced repulsive regime, thereby stabilizing continuous interfacial contact and explaining film-shaped GB precipitation.

cond-mat.mtrl-sci

Asymmetric Electronic Band Alignment and Potentially Enhanced Thermoelectric Properties in Phase-Separated Mg2X (X=Si,Ge,Sn) Alloys

The Mg2X (X=Si, Ge, Sn) based alloy is an eco-friendly thermoelectric material for mid-temperature applications. The Mg2Si1-xSnx and Mg2Ge1-xSnx alloys can be phase-separated into Si(Ge)- and Sn-rich phases during material synthesis, leading to a nanocomposite with locally varying electronic band structure. First-principles calculations reveal that the valence band offset is eight-times larger than the conduction band offset at the interface between Si- and Sn-rich phases for x=0.6, showing type-I and asymmetric band alignment (0.092 eV versus 0.013 eV). Using Boltzmann transport theory and thermionic emission calculations, we show that the large valence band energy discontinuity could allow for energy filtering effects to take place that can potentially increase the power factor substantially in the p-type material system if designed appropriately.

cond-mat.mtrl-sci