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Seung-Hyun Kim

Publications and source records attributed to Seung-Hyun Kim.

4 recordsLinked to original sources

Topology, dynamics, and control of an octopus-analog muscular hydrostat

Muscular hydrostats, such as octopus arms or elephant trunks, lack bones entirely, endowing them with exceptional dexterity and reconfigurability. Key to their unmatched ability to control nearly infinite degrees of freedom is the architecture into which muscle fibers are weaved. Their arrangement is, effectively, the instantiation of a sophisticated mechanical program that mediates, and likely facilitates, the control and realization of complex, dynamic morphological reconfigurations. Here, by combining medical imaging, biomechanical data, live behavioral experiments and numerical simulations, we synthesize a model octopus arm entailing ~200 continuous muscles groups, and begin to unravel its complexity. We show how 3D arm motions can be understood in terms of storage, transport, and conversion of topological quantities, effected by simple muscle activation templates. These, in turn, can be composed into higher-level control strategies that, compounded by the arm's compliance, are demonstrated in a range of object manipulation tasks rendered additionally challenging by the need to appropriately align suckers, to sense and grasp. Overall, our work exposes broad design and algorithmic principles pertinent to muscular hydrostats, robotics, and dynamics, while significantly advancing our ability to model muscular structures from medical imaging, with potential implications for human health and care.

cs.RO

Domain Wall Enabled Steep Slope Switching in MoS$_2$ Transistors Towards Hysteresis-Free Operation

The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation mechanisms remain a central topic of debate. In this work, we report steep slope switching in MoS$_2$ transistors back-gated by single-layer polycrystalline PbZr$_{0.35}$Ti$_{0.65}$O$_3$. The devices exhibit current on/off ratios up to 8$\times$10$^6$ within an ultra-low gate voltage window of $V_g$ = $\pm$0.5 V and subthreshold swing (SS) as low as 9.7 mV decade$^{-1}$ at room temperature, transcending the 60 mV decade$^{-1}$ Boltzmann limit without involving additional dielectric layers. Theoretical modeling reveals the dominant role of the metastable polar states within domain walls in enabling the NC mode, which is corroborated by the relation between SS and domain wall density. Our findings shed light on a hysteresis-free mechanism for NC operation, providing a simple yet effective material strategy for developing low-power 2D nanoelectronics.

physics.app-ph

Thermoelectric Signal Enhancement by Reconciling the Spin Seebeck and Anomalous Nernst Effects in Ferromagnet/Non-magnet Multilayers

The utilization of ferromagnetic (FM) materials in thermoelectric devices allows one to have a simpler structure and/or independent control of electric and thermal conductivities, which may further remove obstacles for this technology to be realized. The thermoelectricity in FM/non-magnet (NM) heterostructures using an optical heating source is studied as a function of NM materials and a number of multilayers. It is observed that the overall thermoelectric signal in those structures which is contributed by spin Seebeck effect and anomalous Nernst effect (ANE) is enhanced by a proper selection of NM materials with a spin Hall angle that matches to the sign of the ANE. Moreover, by an increase of the number of multilayer, the thermoelectric voltage is enlarged further and the device resistance is reduced, simultaneously. The experimental observation of the improvement of thermoelectric properties may pave the way for the realization of magnetic-(or spin-) based thermoelectric devices.

cond-mat.mtrl-sci

Imaging Mechanism of Piezoresponse Force Microscopy in Capacitor Structures

The image formation mechanism in Piezoresponse Force Microscopy (PFM) of capacitor structures is analyzed. We demonstrate that the spatial resolution is a bilinear function of film and top electrode thicknesses, and derive the corresponding analytical expressions. For many perovskites, the opposite contributions of d31 and d33 components can result in anomalous domain wall profiles. This analysis establishes the applicability limits of PFM for polarization dynamics studies in capacitors, and applies to other structural probes, including focused X-ray studies of capacitor structures.

cond-mat.mtrl-sci