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Sevan Gharabeiki

Publications and source records attributed to Sevan Gharabeiki.

3 recordsLinked to original sources

Loss analysis of Low Bandgap (Ag,Cu)(In,Ga)Se2 Solar Cells for Tandem Applications

Tandem solar cells can better harness the energy of the solar spectrum. Chalcopyrite solar cells have drawn attention, being the only highly efficient devices with bandgap around 1.0 eV, suitable for bottom cells. In the quest for better efficiencies, we conduct a complete loss analysis of 1.0 eV bandgap (Ag,Cu)(In,Ga)Se2 cells with efficiencies around 18.5%. We perform absolute photoluminescence, electroluminescence, JV and EQE measurements on the absorber and the finished cells to analyze losses of short-circuit current, open-circuit voltage and fill factor. The relevant losses in current are due to absorption losses in the absorber and could only be mitigated by light management structures. But the most significant losses are found in the voltage, due to non-radiative recombination in the absorber, and the fill factor, due to a high diode factor. The diode factor of the cells is significantly higher than in the absorber alone, indicating a strong influence of recombination in the space charge region.

cond-mat.mtrl-sci

Sodium induced beneficial effects in wide bandgap Cu(In,Ga)S2 solar cell with 15.7% efficiency

This study underscores the pivotal role of sodium (Na) supply in optimizing the optoelectronic properties of wide bandgap (~1.6 eV) Cu(In,Ga)S2 (CIGS) thin film absorbers for high efficiency solar cells. Our findings demonstrate that the synergistic use of Na from the glass substrate, in conjunction with in-situ sodium fluoride (NaF) co-evaporation, significantly enhances the structural and optoelectronic properties of the CIGS. CIGS grown under either Na-deficient or excess conditions exhibits inferior microstructural and optoelectronic properties, whereas an optimal Na supply leads to enhanced photovoltaic performance. Optimal Na incorporation minimizes vertical gallium fluctuations and improves the grain size and crystallinity. An absolute 1 sun calibrated photoluminescence (PL) measurement reveals a substantial suppression of bulk defects and a reduction in non-radiative losses, resulting in a high quasi-fermi level splitting (ΔEF) of 1.07 eV, 93 meV higher than in Na-deficient CIGS with the same bandgap. Optimal Na supply further increases excited carrier decay time, as revealed from time-resolved PL, and hole doping density. Cross-sectional hyperspectral cathodoluminescence mapping reveals that optimal Na supply significantly reduces defect density near the surface, thereby effectively translating ΔEF to open-circuit voltage (VOC). As a result, a champion wide bandgap CIGS solar cell with a cadmium-free ZnSnO buffer layer achieved an impressive VOC of 971 meV and an active area power conversion efficiency of 15.7%, highlighting its potential for advancing tandem photovoltaic technologies with stable inorganic top cell.

cond-mat.mtrl-sci

The effect of a band gap gradient on the radiative losses in the open circuit voltage of solar cells

The radiative open circuit voltage loss in a solar cell occurs because the absorptance spectrum near the band gap shows gradual increase rather than sharp step function like transition. This broadening effect has been attributed to band gap fluctuations and or to Urbach tails. In this report, we use modelling based on Planck s generalized law to distinguish between these two effects. Our results demonstrate that Urbach tails have only a minimal effect on the absorptance edge broadening and clarify that even an ideal direct semiconductor with no band gap fluctuations shows broadening at the absorptance onset. Furthermore, state of the art inorganic thin film solar cells often incorporate a band gap gradient across their thickness, which can further contribute to absorptance broadening. Using Cu(In,Ga)Se2 (CIGSe) absorbers as a case study, we perform a comprehensive analysis of voltage losses through absolute photoluminescence and electroluminescence spectroscopy, combined with photospectrometry and high-spatial-resolution cathodoluminescence measurements. We find that the loss analysis based on the combination of radiative, generation and non-radiative losses is complete. Samples with a graded band gap profile show more pronounced broadening of the absorptance onset and up to 16 mV higher radiative losses compared to the samples with uniform band gap. There is indication, that band gap-graded samples also have larger lateral band gap inhomogeneity.

cond-mat.mtrl-sci