Searcharxiv⌕ Search

arXiv subjects

Shaham Jafarpisheh

Publications and source records attributed to Shaham Jafarpisheh.

2 recordsLinked to original sources

Non-local electrical detection of spin-polarized surface currents in the 3D topological insulator BiSbTeSe$_{2}$

The spin-polarized surface states in topological insulators offer unique transport characteristics that make them distinguishable from trivial conductors. Here, we detect the impact of these surface states in the topological insulator BiSbTeSe$_{2}$ by electrical means using a non-local transport configuration with ferromagnetic Co/Al$_2$O$_3$ electrodes. We show that the non-local measurement allows to probe the surface currents flowing along the whole surface, i.e.~from the top along the side to the bottom surface and back to the top surface along the opposite side. Increasing the temperature increases the interaction between bulk and surface states, which shortens this non-local current path along the surface and hence leads to a complete disappearance of the non-local signal at around 20K. Interestingly, we observe that the ratio between spin signal to background signal is much larger in the non-local geometry compared to the local one. Given that the observed ratio in the non-local geometry aligns well with expectations for spin-polarized surface states, our findings suggest that an as-yet unresolved mechanism diminishes the spin signal in the local geometry.

cond-mat.mes-hall↗

Reducing the impact of bulk doping on transport properties of Bi-based 3D topological insulators

The observation of helical surface states in Bi-based three-dimensional topological insulators has been a challenge since their theoretical prediction. The main issue raises when the Fermi level shifts deep into the bulk conduction band due to the unintentional doping. This results in a metallic conduction of the bulk which dominates the transport measurements and hinders the probing of the surface states in these experiments. In this study, we investigate various strategies to reduce the residual doping in Bi-based topological insulators. Flakes of Bi$_2$Se$_3$ and Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ are grown by physical vapor deposition and their structural and electronic properties are compared to mechanically exfoliated flakes. Using Raman spectroscopy, we explore the role of the substrate in this process and present the optimal conditions for the fabrication of high quality crystals. Despite of this improvement, we show that the vapor phase deposited flakes still suffer from structural disorder which leads to the residual n-type doping of the bulk. Using magneto-measurements we show that exfoliated flakes have better electrical properties and are thus more promising for the probing of surface states.

cond-mat.mes-hall↗