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Shahar Kvatinsky

Publications and source records attributed to Shahar Kvatinsky.

At least 19 recordsLinked to original sources

On the Role of Preprocessing and Memristor Dynamics in Reservoir Computing for Image Classification

Reservoir computing (RC) is an emerging recurrent neural network architecture that has attracted growing attention for its low training cost and modest hardware requirements. Memristor-based circuits are particularly promising for RC, as their intrinsic dynamics can reduce network size and parameter overhead in tasks such as time-series prediction and image recognition. Although RC has been demonstrated with several memristive devices, a comprehensive evaluation of device-level requirements remains limited. In this paper, we analyze and explain the operation of a parallel delayed feedback network (PDFN) RC architecture with volatile memristors, focusing on how device characteristics -- such as decay rate, quantization, and variability -- affect reservoir performance. We further discuss strategies to improve data representation in the reservoir using preprocessing methods and suggest potential improvements. The proposed approach achieves 95.89% classification accuracy on MNIST, comparable with the best reported memristor-based RC implementations. Furthermore, the method maintains high robustness under 20% device variability, achieving an accuracy of up to 94.2%. These results demonstrate that volatile memristors can support reliable spatio-temporal information processing and reinforce their potential as key building blocks for compact, high-speed, and energy-efficient neuromorphic computing systems.

cs.NE

Harnessing the VO2 Phase Transition for Automatic Gain Control in Transimpedance Amplifiers

Transimpedance amplifiers (TIAs) are essential in sensor electronics, converting input currents into output voltages. Conventional TIAs utilize fixed-gain resistors, which saturate under high input currents and consequently result in undesirable recovery times. To overcome this limitation, volatile resistive switching devices have emerged as a promising alternative, offering intrinsic automatic gain control (AGC). Among these, vanadium dioxide (VO2) devices stand out for their reversible insulator-metal transition (IMT), producing abrupt, energy-efficient resistance changes near the transition temperature (67 C). In this work, a switching device was fabricated by sputtering a VO2 thin film and patterning 200 nm electrode gaps atop it. Before integrating this device into the TIA circuit, its switching dynamics were characterized under electrical pulse excitation. Slightly exceeding the temperature-dependent IMT threshold voltage (Vth) yielded fast and reproducible switching. Complementary pump-probe measurements showed that operating well below TC effectively suppresses short-term memory effects linked to the stochastic nature of the first-order transition. Leveraging these insights, a custom VO2-based TIA was developed, demonstrating variable gain and AGC functionality. Furthermore, applying a constant DC current bias during switching induced self-sustained oscillations (2 pJ per spike) with frequencies up to 60 MHz, consistent with the thermal timescale of the VO2 devices. Overall, these results provide a detailed understanding of VO2 switching dynamics and demonstrate their potential for enabling compact, energy-efficient AGC in high-speed TIAs for advanced sensing applications.

cond-mat.str-el

A Comparative Study of Digital Memristor-Based Processing-In-Memory from a Device and Reliability Perspective

As data-intensive applications increasingly strain conventional computing systems, processing-in-memory (PIM) has emerged as a promising paradigm to alleviate the memory wall by minimizing data transfer between memory and processing units. This review presents the recent advances in both stateful and non-stateful logic techniques for PIM, focusing on emerging nonvolatile memory technologies such as resistive random-access memory (RRAM), phase-change memory (PCM), and magnetoresistive random-access memory (MRAM). Both experimentally demonstrated and simulated logic designs are critically examined, highlighting key challenges in reliability and the role of device-level optimization in enabling scalable and commercial viable PIM systems. The review begins with an overview of relevant logic families, memristive device types, and associated reliability metrics. Each logic family is then explored in terms of how it capitalizes on distinct device properties to implement logic techniques. A comparative table of representative device stacks and performance parameters illustrates trade-offs and quality indicators. Through this comprehensive analysis, the development of optimized, robust memristive devices for next-generation PIM applications is supported.

cs.ET

Stateful Logic In-Memory Using Gain-Cell eDRAM

Modern data-intensive applications demand memory solutions that deliver high-density, low-power, and integrated computational capabilities to reduce data movement overhead. This paper presents the use of Gain-Cell embedded DRAM (GC-eDRAM) - a compelling alternative to traditional SRAM and eDRAM - for stateful, in-memory logic. We propose a circuit design that exploits GC-eDRAM's dual-port architecture and nondestructive read operation to perform logic functions directly within the GC-eDRAM memory array. Our simulation results demonstrate a 5us retention time coupled with a 99.5% success rate for computing the logic gates. By incorporating processing-in-memory (PIM) functionality into GC-eDRAM, our approach enhances memory and compute densities, lowers power consumption, and improves overall performance for data-intensive applications.

cs.ET

Preprocessing Methods for Memristive Reservoir Computing for Image Recognition

Reservoir computing (RC) has attracted attention as an efficient recurrent neural network architecture due to its simplified training, requiring only its last perceptron readout layer to be trained. When implemented with memristors, RC systems benefit from their dynamic properties, which make them ideal for reservoir construction. However, achieving high performance in memristor-based RC remains challenging, as it critically depends on the input preprocessing method and reservoir size. Despite growing interest, a comprehensive evaluation that quantifies the impact of these factors is still lacking. This paper systematically compares various preprocessing methods for memristive RC systems, assessing their effects on accuracy and energy consumption. We also propose a parity-based preprocessing method that improves accuracy by 2-6% while requiring only a modest increase in device count compared to other methods. Our findings highlight the importance of informed preprocessing strategies to improve the efficiency and scalability of memristive RC systems.

cs.NE

IMPACT:InMemory ComPuting Architecture Based on Y-FlAsh Technology for Coalesced Tsetlin Machine Inference

The increasing demand for processing large volumes of data for machine learning models has pushed data bandwidth requirements beyond the capability of traditional von Neumann architecture. In-memory computing (IMC) has recently emerged as a promising solution to address this gap by enabling distributed data storage and processing at the micro-architectural level, significantly reducing both latency and energy. In this paper, we present the IMPACT: InMemory ComPuting Architecture Based on Y-FlAsh Technology for Coalesced Tsetlin Machine Inference, underpinned on a cutting-edge memory device, Y-Flash, fabricated on a 180 nm CMOS process. Y-Flash devices have recently been demonstrated for digital and analog memory applications, offering high yield, non-volatility, and low power consumption. The IMPACT leverages the Y-Flash array to implement the inference of a novel machine learning algorithm: coalesced Tsetlin machine (CoTM) based on propositional logic. CoTM utilizes Tsetlin automata (TA) to create Boolean feature selections stochastically across parallel clauses. The IMPACT is organized into two computational crossbars for storing the TA and weights. Through validation on the MNIST dataset, IMPACT achieved 96.3% accuracy. The IMPACT demonstrated improvements in energy efficiency, e.g., 2.23X over CNN-based ReRAM, 2.46X over Neuromorphic using NOR-Flash, and 2.06X over DNN-based PCM, suited for modern ML inference applications.

cs.AR

Accelerating DNA Read Mapping with Digital Processing-in-Memory

Genome analysis has revolutionized fields such as personalized medicine and forensics. Modern sequencing machines generate vast amounts of fragmented strings of genome data called reads. The alignment of these reads into a complete DNA sequence of an organism (the read mapping process) requires extensive data transfer between processing units and memory, leading to execution bottlenecks. Prior studies have primarily focused on accelerating specific stages of the read-mapping task. Conversely, this paper introduces a holistic framework called DART-PIM that accelerates the entire read-mapping process. DART-PIM facilitates digital processing-in-memory (PIM) for an end-to-end acceleration of the entire read-mapping process, from indexing using a unique data organization schema to filtering and read alignment with an optimized Wagner Fischer algorithm. A comprehensive performance evaluation with real genomic data shows that DART-PIM achieves a 5.7x and 257x improvement in throughput and a 92x and 27x energy efficiency enhancement compared to state-of-the-art GPU and PIM implementations, respectively.

cs.AR

VVTEAM: A Compact Behavioral Model for Volatile Memristors

Volatile memristors have recently gained popularity as promising devices for neuromorphic circuits, capable of mimicking the leaky function of neurons and offering advantages over capacitor-based circuits in terms of power dissipation and area. Additionally, volatile memristors are useful as selector devices and for hardware security circuits such as physical unclonable functions. To facilitate the design and simulation of circuits, a compact behavioral model is essential. This paper proposes V-VTEAM, a compact, simple, general, and flexible behavioral model for volatile memristors, inspired by the VTEAM nonvolatile memristor model and developed in MATLAB. The validity of the model is demonstrated by fitting it to an ion drift/diffusion-based Ag/SiOx/C/W volatile memristor, achieving a relative root mean error square of 4.5%.

cs.AR

Bitwise Logic Using Phase Change Memory Devices Based on the Pinatubo Architecture

This paper experimentally demonstrates a near-crossbar memory logic technique called Pinatubo. Pinatubo, an acronym for Processing In Non-volatile memory ArchiTecture for bUlk Bitwise Operations, facilitates the concurrent activation of two or more rows, enabling bitwise operations such as OR, AND, XOR, and NOT on the activated rows. We implement Pinatubo using phase change memory (PCM) and compare our experimental results with the simulated data from the original Pinatubo study. Our findings highlight a significant four-orders of magnitude difference between resistance states, suggesting the robustness of the Pinatubo architecture with PCM technology.

cs.AR

Assessing the Performance of Stateful Logic in 1-Selector-1-RRAM Crossbar Arrays

Resistive Random Access Memory (RRAM) crossbar arrays are an attractive memory structure for emerging nonvolatile memory due to their high density and excellent scalability. Their ability to perform logic operations using RRAM devices makes them a critical component in non-von Neumann processing-in-memory architectures. Passive RRAM crossbar arrays (1-RRAM or 1R), however, suffer from a major issue of sneak path currents, leading to a lower readout margin and increasing write failures. To address this challenge, active RRAM arrays have been proposed, which incorporate a selector device in each memory cell (termed 1-selector-1-RRAM or 1S1R). The selector eliminates currents from unselected cells and therefore effectively mitigates the sneak path phenomenon. Yet, there is a need for a comprehensive analysis of 1S1R arrays, particularly concerning in-memory computation. In this paper, we introduce a 1S1R model tailored to a VO2-based selector and TiN/TiOx/HfOx/Pt RRAM device. We also present simulations of 1S1R arrays, incorporating all parasitic parameters, across a range of array sizes from $4\times4$ to $512\times512$. We evaluate the performance of Memristor-Aided Logic (MAGIC) gates in terms of switching delay, power consumption, and readout margin, and provide a comparative evaluation with passive 1R arrays.

cs.AR

Roadmap to Neuromorphic Computing with Emerging Technologies

The roadmap is organized into several thematic sections, outlining current computing challenges, discussing the neuromorphic computing approach, analyzing mature and currently utilized technologies, providing an overview of emerging technologies, addressing material challenges, exploring novel computing concepts, and finally examining the maturity level of emerging technologies while determining the next essential steps for their advancement.

eess.SP

A Pipelined Memristive Neural Network Analog-to-Digital Converter

With the advent of high-speed, high-precision, and low-power mixed-signal systems, there is an ever-growing demand for accurate, fast, and energy-efficient analog-to-digital (ADCs) and digital-to-analog converters (DACs). Unfortunately, with the downscaling of CMOS technology, modern ADCs trade off speed, power and accuracy. Recently, memristive neuromorphic architectures of four-bit ADC/DAC have been proposed. Such converters can be trained in real-time using machine learning algorithms, to break through the speedpower-accuracy trade-off while optimizing the conversion performance for different applications. However, scaling such architectures above four bits is challenging. This paper proposes a scalable and modular neural network ADC architecture based on a pipeline of four-bit converters, preserving their inherent advantages in application reconfiguration, mismatch selfcalibration, noise tolerance, and power optimization, while approaching higher resolution and throughput in penalty of latency. SPICE evaluation shows that an 8-bit pipelined ADC achieves 0.18 LSB INL, 0.20 LSB DNL, 7.6 ENOB, and 0.97 fJ/conv FOM. This work presents a significant step towards the realization of large-scale neuromorphic data converters.

eess.SY

Low-power Rapid Planar Superconducting Logic Devices

The rapid-pace growing demand for high-performance computation and big-data manipulation entails substantial increase in global power consumption, and challenging thermal management. Thus, there is a need in allocating competitive alternatives for complementary metal-oxide-semiconductor (CMOS) technologies. Superconducting platforms, such as rapid single flux quantum (RSFQ) lack electric resistance and excel in power efficiency and time performance. However, traditional RSFQs require 3D geometry for their Josephson junctions (JJs) imposing a large footprint, and hence preventing device miniaturization and increasing processing time. Here, we demonstrate that RSFQ logic circuits of planar geometry with weak-link bridges are scalable, relatively easy to process and are CMOS-compatible on a Si chip. Universal logic gates, as well as combinational arithmetic circuiting that are based on these devices are demonstrated. The power consumption and processing time of these logic circuits were as low as 0.8 nW and 13 ps, an order of magnitude improvement with respect to the equivalent traditional-RSFQ logic circuits and two orders of magnitude with respect to CMOS. The competitive performance of planar RSFQ logic circuits renders them for promising CMOS substitutes, especially in the supercomputational realm.

cond-mat.supr-con

Transimpedance Amplifier with Automatic Gain Control Based on Memristors for Optical Signal Acquisition

Transimpedance amplifiers (TIA) play a crucial role in various electronic systems, especially in optical signal acquisition. However, their performance is often hampered by saturation issues due to high input currents, leading to prolonged recovery times. This paper addresses this challenge by introducing a novel approach utilizing a memristive automatic gain control (AGC) to adjust the TIA's gain and enhance its dynamic range. We replace the typical feedback resistor of a TIA with a valence-change mechanism (VCM) memristor. This substitution enables the TIA to adapt to a broader range of input signals, leveraging the substantial OFF/ON resistance ratio of the memristor. This paper also presents the reading and resetting sub-circuits essential for monitoring and controling the memristor's state. The proposed circuit is evaluated through SPICE simulations. Furthermore, we extend our evaluation to practical testing using a printed circuit board (PCB) integrating the TIA and memristor. We show a remarkable 40 dB increase in the dynamic range of our TIA memristor circuit compared to traditional resistor-based TIAs.

cs.AR

ClaPIM: Scalable Sequence CLAssification using Processing-In-Memory

DNA sequence classification is a fundamental task in computational biology with vast implications for applications such as disease prevention and drug design. Therefore, fast high-quality sequence classifiers are significantly important. This paper introduces ClaPIM, a scalable DNA sequence classification architecture based on the emerging concept of hybrid in-crossbar and near-crossbar memristive processing-in-memory (PIM). We enable efficient and high-quality classification by uniting the filter and search stages within a single algorithm. Specifically, we propose a custom filtering technique that drastically narrows the search space and a search approach that facilitates approximate string matching through a distance function. ClaPIM is the first PIM architecture for scalable approximate string matching that benefits from the high density of memristive crossbar arrays and the massive computational parallelism of PIM. Compared with Kraken2, a state-of-the-art software classifier, ClaPIM provides significantly higher classification quality (up to 20x improvement in F1 score) and also demonstrates a 1.8x throughput improvement. Compared with EDAM, a recently-proposed SRAM-based accelerator that is restricted to small datasets, we observe both a 30.4x improvement in normalized throughput per area and a 7% increase in classification precision.

cs.LG

Enabling Relational Database Analytical Processing in Bulk-Bitwise Processing-In-Memory

Bulk-bitwise processing-in-memory (PIM), an emerging computational paradigm utilizing memory arrays as computational units, has been shown to benefit database applications. This paper demonstrates how GROUP-BY and JOIN, database operations not supported by previous works, can be performed efficiently in bulk-bitwise PIM for relational database analytical processing. We extend the gem5 simulator and evaluated our hardware modifications on the Star Schema Benchmark. We show that compared to previous works, our modifications improve (on average) execution time by 1.83X, energy by 4.31X, and the system's lifetime by 3.21X. We also achieved a speedup of 4.65X over MonetDB, a modern state-of-the-art in-memory database.

cs.AR

TDPP: Two-Dimensional Permutation-Based Protection of Memristive Deep Neural Networks

The execution of deep neural network (DNN) algorithms suffers from significant bottlenecks due to the separation of the processing and memory units in traditional computer systems. Emerging memristive computing systems introduce an in situ approach that overcomes this bottleneck. The non-volatility of memristive devices, however, may expose the DNN weights stored in memristive crossbars to potential theft attacks. Therefore, this paper proposes a two-dimensional permutation-based protection (TDPP) method that thwarts such attacks. We first introduce the underlying concept that motivates the TDPP method: permuting both the rows and columns of the DNN weight matrices. This contrasts with previous methods, which focused solely on permuting a single dimension of the weight matrices, either the rows or columns. While it's possible for an adversary to access the matrix values, the original arrangement of rows and columns in the matrices remains concealed. As a result, the extracted DNN model from the accessed matrix values would fail to operate correctly. We consider two different memristive computing systems (designed for layer-by-layer and layer-parallel processing, respectively) and demonstrate the design of the TDPP method that could be embedded into the two systems. Finally, we present a security analysis. Our experiments demonstrate that TDPP can achieve comparable effectiveness to prior approaches, with a high level of security when appropriately parameterized. In addition, TDPP is more scalable than previous methods and results in reduced area and power overheads. The area and power are reduced by, respectively, 1218$\times$ and 2815$\times$ for the layer-by-layer system and by 178$\times$ and 203$\times$ for the layer-parallel system compared to prior works.

cs.CR

Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors

Processing-in-memory (PIM) is attractive to overcome the limitations of modern computing systems. Numerous PIM systems exist, varying by the technologies and logic techniques used. Successful operation of specific logic functions is crucial for effective processing-in-memory. Memristive non-stateful logic techniques are compatible with CMOS logic and can be integrated into a 1T1R memory array, similar to commercial RRAM products. This paper analyzes and demonstrates two non-stateful logic techniques: 1T1R logic and scouting logic. As a first step, the used 1T1R SiO\textsubscript{x} valence change mechanism memristors are characterized in reference to their feasibility to perform logic functions. Various logical functions of the two logic techniques are experimentally demonstrated, showing correct functionality in all cases. Following the results, the challenges and limitations of the RRAM characteristics and 1T1R configuration for the application in logical functions are discussed.

cs.AR