arXiv subjects

Shahnaz Aas

Publications and source records attributed to Shahnaz Aas.

4 recordsLinked to original sources

arXiv2019

Geometric band properties in strained monolayer transition metal dichalcogenides using simple band structures

Monolayer transition metal dichalcogenides (TMDs) bare large Berry curvature hotspots readily exploitable for geometric band effects. Tailoring and enhancement of these features via strain is an active research direction. Here, we consider spinless two- and three-band, and spinful four-band models capable to quantify Berry curvature and orbital magnetic moment of strained TMDs. First, we provide a $k\cdot p$ parameter set for MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$ in the light of the recently released ab initio and experimental band properties. Its validity range extends from $K$ valley edge to about hundred millielectron volts into valence and conduction bands for these TMDs. To expand this over a larger part of the Brillouin zone, we incorporate strain to an available three-band tight-binding Hamiltonian. With these techniques we demonstrate that both the Berry curvature and the orbital magnetic moment can be doubled compared to their intrinsic values by applying typically a 2.5% biaxial tensile strain. These simple band structure tools can find application in the quantitative device modeling of the geometric band effects in strained monolayer TMDs.

cond-mat.mtrl-sci↗

arXiv2018

Strain dependence of photoluminescence and circular dichroism in transition metal dichalcogenides: a k.p analysis

Within a two-band $k\cdot p$ method we analyze different types of strain for the $K$ valley optical characteristics of a freestanding monolayer MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$. We predict that circular polarization selectivity for energies above the direct transition onset deteriorates/improves by tensile/compressive strain. Wide range of available strained-sample photoluminescence data can be reasonably reproduced by this simple bandstructure combined with accounting for excitons at a variational level. According to this model strain impacts optoelectronic properties through its hydrostatic component, whereas the shear strain only causes a rigid wavevector shift of the valley. Furthermore, under the stress loading of flexible substrates the presence of Poisson's effect or the lack of it are examined individually for the reported measurements.

cond-mat.mes-hall↗

arXiv2018

Graphene Based Adaptive Thermal Camouflage

In nature adaptive coloration has been effectively utilized for concealment and signaling. Various biological mechanisms have evolved that can tune the reflectivity for visible and ultraviolet light. These examples inspire many artificial systems for mimicking adaptive coloration to match the visual appearance to their surroundings. Thermal camouflage, however, has been an outstanding challenge which requires an ability to control of the emitted thermal radiation from the surface. Here we report a new class of active thermal surfaces capable of efficient real-time electrical-control of thermal emission over the full infrared (IR) spectrum without changing the temperature of the surface. Our approach relies on electro-modulation of IR absorptivity and emissivity of multilayer graphene via reversible intercalation of nonvolatile ionic liquids. The demonstrated devices are light (30 g/m2), thin (<50 um) and ultra-flexible which can conformably coat their environment. In addition, combining active thermal surfaces with a feedback mechanism, we demonstrate realization of an adaptive thermal camouflage system which can reconfigure its thermal appearance and blend itself with the thermal background in a few seconds. Furthermore, we show that these devices can disguise hot objects as cold and cold ones as hot in a thermal imaging system. We anticipate that, the electrical control of thermal radiation will impact on a variety of new technologies ranging from adaptive IR optics to heat management for outer space applications.

physics.app-ph↗

arXiv2013

Optical bistability in one dimensional doped photonic crystals with spontaneously generated coherence

We investigate optical bistability in a multilayer one-dimensional photonic crystal where the central layer is doped with $Λ$-type three level atoms. We take into account the influence of spontaneously generated coherence when the lower atomic levels are sufficiently close to each other, in which case Kerr-type nonlinear response of the atoms is enhanced. We calculate the propagation of a probe beam in the defect mode window using numerical nonlinear transfer matrix method. We find that Rabi frequency of a control field acting on the defect layer and the detuning of the probe field from the atomic resonance can be used to control the size and contrast of the hysteresis loop and the threshold of the optical bistability. In particular we find that, at the optimal spontaneously generated coherence, three orders of magnitude lower threshold can be achieved relative to the case without the coherence.

quant-ph↗