arXiv subjects

Shahriar Aghaeimeibodi

Publications and source records attributed to Shahriar Aghaeimeibodi.

At least 19 recordsLinked to original sources

arXiv2025

Broadband and high-precision two-level system loss measurement using superconducting multi-wave resonators

Two-level systems (TLS) are known to be a dominant source of dissipation and decoherence in superconducting qubits. Superconducting resonators provide a convenient way to study TLS-induced loss due to easier design and fabrication in comparison to devices that include non-linear elements. However, accurately measuring TLS-induced loss in a resonator in the quantum regime is challenging due to low signal-to-noise ratio (SNR) and the temporal fluctuations of the TLS, leading to uncertainties of 30% or more. To address these limitations, we develop a multi-wave resonator device that extends the resonator length from a standard quarter-wave $λ/4$ to $Nλ/4$ where $N = 37$ at 6GHz. This design provides two key advantages: the TLS-induced fluctuations are reduced by a factor of $\sqrt{N}$ due to spatial averaging over an increased number of independent TLS, and the measurement SNR for a given intra-resonator energy density improves by a factor of $\sqrt{N}$. The multi-wave resonator also has fundamental and harmonic resonances that allow one to study the frequency dependence of TLS-induced loss. In this work we fabricate both multi-wave and quarter-wave coplanar waveguide resonators formed from thin-film aluminum on a silicon substrate, and characterize their TLS properties at both 10mK and 200mK. Our results show that the power-dependent TLS-induced loss measured from both types of resonators agree well, with the multi-wave resonators achieving a five-fold reduction in measurement uncertainty due to TLS fluctuations, down to 5%. The $Nλ/4$ resonator also provides a measure of the fully unsaturated TLS-induced loss due to the improved measurement SNR at low intra-resonator energy densities. Finally, measurements across seven harmonic resonances of the $Nλ/4$ resonator between 4GHz - 6.5GHz reveals no frequency dependence in the TLS-induced loss over this range.

quant-ph↗

arXiv2025

Preserving phase coherence and linearity in cat qubits with exponential bit-flip suppression

Cat qubits, a type of bosonic qubit encoded in a harmonic oscillator, can exhibit an exponential noise bias against bit-flip errors with increasing mean photon number. Here, we focus on cat qubits stabilized by two-photon dissipation, where pairs of photons are added and removed from a harmonic oscillator by an auxiliary, lossy buffer mode. This process requires a large loss rate and strong nonlinearities of the buffer mode that must not degrade the coherence and linearity of the oscillator. In this work, we show how to overcome this challenge by coloring the loss environment of the buffer mode with a multi-pole filter and optimizing the circuit to take into account additional inductances in the buffer mode. Using these techniques, we achieve near-ideal enhancement of cat-qubit bit-flip times with increasing photon number, reaching over $0.1$ seconds with a mean photon number of only $4$. Concurrently, our cat qubit remains highly phase coherent, with phase-flip times corresponding to an effective lifetime of $T_{1,\text{eff}} \simeq 70$ $μ$s, comparable with the bare oscillator lifetime. We achieve this performance even in the presence of an ancilla transmon, used for reading out the cat qubit states, by engineering a tunable oscillator-ancilla dispersive coupling. Furthermore, the low nonlinearity of the harmonic oscillator mode allows us to perform pulsed cat-qubit stabilization, an important control primitive, where the stabilization can remain off for a significant fraction (e.g., two thirds) of a $3~\mathrm{μs}$ cycle without degrading bit-flip times. These advances are important for the realization of scalable error-correction with cat qubits, where large noise bias and low phase-flip error rate enable the use of hardware-efficient outer error-correcting codes.

quant-ph↗

arXiv2025

Hardware-efficient quantum error correction via concatenated bosonic qubits

In order to solve problems of practical importance, quantum computers will likely need to incorporate quantum error correction, where a logical qubit is redundantly encoded in many noisy physical qubits. The large physical-qubit overhead typically associated with error correction motivates the search for more hardware-efficient approaches. Here, using a microfabricated superconducting quantum circuit, we realize a logical qubit memory formed from the concatenation of encoded bosonic cat qubits with an outer repetition code of distance $d=5$. The bosonic cat qubits are passively protected against bit flips using a stabilizing circuit. Cat-qubit phase-flip errors are corrected by the repetition code which uses ancilla transmons for syndrome measurement. We realize a noise-biased CX gate which ensures bit-flip error suppression is maintained during error correction. We study the performance and scaling of the logical qubit memory, finding that the phase-flip correcting repetition code operates below threshold, with logical phase-flip error decreasing with code distance from $d=3$ to $d=5$. Concurrently, the logical bit-flip error is suppressed with increasing cat-qubit mean photon number. The minimum measured logical error per cycle is on average $1.75(2)\%$ for the distance-3 code sections, and $1.65(3)\%$ for the longer distance-5 code, demonstrating the effectiveness of bit-flip error suppression throughout the error correction cycle. These results, where the intrinsic error suppression of the bosonic encodings allows us to use a hardware-efficient outer error correcting code, indicate that concatenated bosonic codes are a compelling paradigm for reaching fault-tolerant quantum computation.

quant-ph↗

arXiv2025

Low-Loss Superconducting Resonators Fabricated from Tantalum Films Grown at Room Temperature

The use of $α$-tantalum in superconducting circuits has enabled a considerable improvement of the coherence time of transmon qubits. The standard approach to grow $α$-tantalum thin films on silicon involves heating the substrate, which takes several hours per deposition and prevents the integration of this material with wafers containing temperature-sensitive components. We report a detailed experimental study of an alternative growth method of $α$-tantalum on silicon, which is achieved at room temperature through the use of a niobium seed layer. Despite a substantially higher density of oxygen-rich grain boundaries in the films sputtered at room temperature, resonators made from these films are found to have state-of-the-art quality factors, comparable to resonators fabricated from tantalum grown at high temperature. This finding challenges previous assumptions about correlations between material properties and microwave loss of superconducting thin films, and opens a new avenue for the integration of tantalum into fabrication flows with limited thermal budget.

physics.app-ph↗

arXiv2024

Single-Shot Readout and Weak Measurement of a Tin-Vacancy Qubit in Diamond

The negatively charged tin-vacancy center in diamond (SnV$^-$) is an emerging platform for building the next generation of long-distance quantum networks. This is due to the SnV$^-$'s favorable optical and spin properties including bright emission, insensitivity to electronic noise, and long spin coherence times at temperatures above 1 Kelvin. Here, we demonstrate measurement of a single SnV$^-$ electronic spin with a single-shot readout fidelity of $87.4\%$, which can be further improved to $98.5\%$ by conditioning on multiple readouts. We show this performance is compatible with rapid microwave spin control, demonstrating that the trade-off between optical readout and spin control inherent to group-IV centers in diamond can be overcome for the SnV$^-$. Finally, we use weak quantum measurement to study measurement induced dephasing; this illuminates the fundamental interplay between measurement and decoherence in quantum mechanics, and makes use of the qubit's spin coherence as a metrological tool. Taken together, these results overcome an important hurdle in the development of the SnV$^-$ based quantum technologies, and in the process, develop techniques and understanding broadly applicable to the study of solid-state quantum emitters.

quant-ph↗

arXiv2024

Demonstrating a long-coherence dual-rail erasure qubit using tunable transmons

Quantum error correction with erasure qubits promises significant advantages over standard error correction due to favorable thresholds for erasure errors. To realize this advantage in practice requires a qubit for which nearly all errors are such erasure errors, and the ability to check for erasure errors without dephasing the qubit. We demonstrate that a "dual-rail qubit" consisting of a pair of resonantly coupled transmons can form a highly coherent erasure qubit, where transmon $T_1$ errors are converted into erasure errors and residual dephasing is strongly suppressed, leading to millisecond-scale coherence within the qubit subspace. We show that single-qubit gates are limited primarily by erasure errors, with erasure probability $p_\text{erasure} = 2.19(2)\times 10^{-3}$ per gate while the residual errors are $\sim 40$ times lower. We further demonstrate mid-circuit detection of erasure errors while introducing $< 0.1\%$ dephasing error per check. Finally, we show that the suppression of transmon noise allows this dual-rail qubit to preserve high coherence over a broad tunable operating range, offering an improved capacity to avoid frequency collisions. This work establishes transmon-based dual-rail qubits as an attractive building block for hardware-efficient quantum error correction.

quant-ph↗

arXiv2023

Microwave Spin Control of a Tin-Vacancy Qubit in Diamond

The negatively charged tin-vacancy (SnV-) center in diamond is a promising solid-state qubit for applications in quantum networking due to its high quantum efficiency, strong zero phonon emission, and reduced sensitivity to electrical noise. The SnV- has a large spin-orbit coupling, which allows for long spin lifetimes at elevated temperatures, but unfortunately suppresses the magnetic dipole transitions desired for quantum control. Here, by use of a naturally strained center, we overcome this limitation and achieve high-fidelity microwave spin control. We demonstrate a pi-pulse fidelity of up to 99.51+/0.03%$ and a Hahn-echo coherence time of T2echo = 170.0+/-2.8 microseconds, both the highest yet reported for SnV- platform. This performance comes without compromise to optical stability, and is demonstrated at 1.7 Kelvin where ample cooling power is available to mitigate drive induced heating. These results pave the way for SnV- spins to be used as a building block for future quantum technologies.

quant-ph↗

arXiv2023

Efficient Photonic Integration of Diamond Color Centers and Thin-Film Lithium Niobate

On-chip photonic quantum circuits with integrated quantum memories have the potential to radically progress hardware for quantum information processing. In particular, negatively charged group-IV color centers in diamond are promising candidates for quantum memories, as they combine long storage times with excellent optical emission properties and an optically-addressable spin state. However, as a material, diamond lacks many functionalities needed to realize scalable quantum systems. Thin-film lithium niobate (TFLN), in contrast, offers a number of useful photonic nonlinearities, including the electro-optic effect, piezoelectricity, and capabilities for periodically-poled quasi-phase matching. Here, we present highly efficient heterogeneous integration of diamond nanobeams containing negatively charged silicon-vacancy (SiV) centers with TFLN waveguides. We observe greater than 90\% transmission efficiency between the diamond nanobeam and TFLN waveguide on average across multiple measurements. By comparing saturation signal levels between confocal and integrated collection, we determine a $10$-fold increase in photon counts channeled into TFLN waveguides versus that into out-of-plane collection channels. Our results constitute a key step for creating scalable integrated quantum photonic circuits that leverage the advantages of both diamond and TFLN materials.

physics.optics↗

arXiv2021

Inverse-designed multi-dimensional silicon photonic transmitters

Modern microelectronic processors have migrated towards parallel computing architectures with many-core processors. However, such expansion comes with diminishing returns exacted by the high cost of data movement between individual processors. The use of optical interconnects has burgeoned as a promising technology that can address the limits of this data transfer. While recent pushes to enhance optical communication have focused on developing wavelength-division multiplexing technology, this approach will eventually saturate the usable bandwidth, and new dimensions of data transfer will be paramount to fulfill the ever-growing need for speed. Here we demonstrate an integrated intra- and inter-chip multi-dimensional communication scheme enabled by photonic inverse design. Using inverse-designed mode-division multiplexers, we combine wavelength- and mode- multiplexing and send massively parallel data through nano-photonic waveguides and optical fibres. Crucially, as we take advantage of an orthogonal optical basis, our approach is inherently scalable to a multiplicative enhancement over the current state of the art.

physics.app-ph↗

arXiv2021

Electrical tuning of tin-vacancy centers in diamond

Group-IV color centers in diamond have attracted significant attention as solid-state spin qubits because of their excellent optical and spin properties. Among these color centers, the tin-vacancy (SnV$^{\,\textrm{-}}$) center is of particular interest because its large ground-state splitting enables long spin coherence times at temperatures above 1$\,$K. However, color centers typically suffer from inhomogeneous broadening, which can be exacerbated by nanofabrication-induced strain, hindering the implementation of quantum nodes emitting indistinguishable photons. Although strain and Raman tuning have been investigated as promising techniques to overcome the spectral mismatch between distinct group-IV color centers, other approaches need to be explored to find methods that can offer more localized control without sacrificing emission intensity. Here, we study electrical tuning of SnV$^{\,\textrm{-}}$ centers in diamond via the direct-current Stark effect. We demonstrate a tuning range beyond 1.7$\,$GHz. We observe both quadratic and linear dependence on the applied electric field. We also confirm that the tuning effect we observe is a result of the applied electric field and is distinct from thermal tuning due to Joule heating. Stark tuning is a promising avenue toward overcoming detunings between emitters and enabling the realization of multiple identical quantum nodes.

physics.optics↗

arXiv2021

A Quantum Photonic Interface for Tin-Vacancy Centers in Diamond

The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions, long-lived spin ground states, and potential for integration with nanophotonics. Tin-vacancy (SnV$^{\,\textrm{-}}$) centers in diamond are of particular interest because they exhibit narrow-linewidth emission in nanostructures and possess long spin coherence times at temperatures above 1 K. However, a nanophotonic interface for SnV$^{\,\textrm{-}}$ centers has not yet been realized. Here, we report cavity enhancement of the emission of SnV$^{\,\textrm{-}}$ centers in diamond. We integrate SnV$^{\,\textrm{-}}$ centers into one-dimensional photonic crystal resonators and observe a 40-fold increase in emission intensity. The Purcell factor of the coupled system is 25, resulting in channeling of the majority of photons ($90\%$) into the cavity mode. Our results pave the way for the creation of efficient, scalable spin-photon interfaces based on SnV$^{\,\textrm{-}}$ centers in diamond.

physics.optics↗

arXiv2020

Narrow-linewidth tin-vacancy centers in a diamond waveguide

Integrating solid-state quantum emitters with photonic circuits is essential for realizing large-scale quantum photonic processors. Negatively charged tin-vacancy (SnV$^-$) centers in diamond have emerged as promising candidates for quantum emitters because of their excellent optical and spin properties including narrow-linewidth emission and long spin coherence times. SnV$^-$ centers need to be incorporated in optical waveguides for efficient on-chip routing of the photons they generate. However, such integration has yet to be realized. In this Letter, we demonstrate the coupling of SnV$^-$ centers to a nanophotonic waveguide. We realize this device by leveraging our recently developed shallow ion implantation and growth method for generation of high-quality SnV$^-$ centers and the advanced quasi-isotropic diamond fabrication technique. We confirm the compatibility and robustness of these techniques through successful coupling of narrow-linewidth SnV$^-$ centers (as narrow as $36\pm2$ MHz) to the diamond waveguide. Furthermore, we investigate the stability of waveguide-coupled SnV$^-$ centers under resonant excitation. Our results are an important step toward SnV$^-$-based on-chip spin-photon interfaces, single-photon nonlinearity, and photon-mediated spin interactions.

physics.optics↗

arXiv2019

Hybrid integration methods for on-chip quantum photonics

The goal of integrated quantum photonics is to combine components for the generation, manipulation, and detection of non-classical light in a phase stable and efficient platform. Solid-state quantum emitters have recently reached outstanding performance as single photon sources. In parallel, photonic integrated circuits have been advanced to the point that thousands of components can be controlled on a chip with high efficiency and phase stability. Consequently, researchers are now beginning to combine these leading quantum emitters and photonic integrated circuit platforms to realize the best properties of each technology. In this article, we review recent advances in integrated quantum photonics based on such hybrid systems. Although hybrid integration solves many limitations of individual platforms, it also introduces new challenges that arise from interfacing different materials. We review various issues in solid-state quantum emitters and photonic integrated circuits, the hybrid integration techniques that bridge these two systems, and methods for chip-based manipulation of photons and emitters. Finally, we discuss the remaining challenges and future prospects of on-chip quantum photonics with integrated quantum emitters.

physics.app-ph↗

arXiv2019

Chiral light-matter interactions using spin-valley states in transition metal dichalcogenides

Chiral light-matter interactions can enable polarization to control the direction of light emission in a photonic device. Most realizations of chiral light-matter interactions require external magnetic fields to break time-reversal symmetry of the emitter. One way to eliminate this requirement is to utilize strong spin-orbit coupling present in transition metal dichalcogenides that exhibit a valley dependent polarized emission. Such interactions were previously reported using plasmonic waveguides, but these structures exhibit short propagation lengths due to loss. Chiral dielectric structures exhibit much lower loss levels and could therefore solve this problem. We demonstrate chiral light-matter interactions using spin-valley states of transition metal dichalcogenide monolayers coupled to a dielectric waveguide. We use a photonic crystal glide plane waveguide that exhibits chiral modes with high field intensity, coupled to monolayer WSe2. We show that the circularly polarized emission of the monolayer preferentially couples to one direction of the waveguide, with a directionality as high as 0.35, limited by the polarization purity of the bare monolayer emission. This system enables on-chip directional control of light and could provide new ways to control spin and valley degrees of freedom in a scalable photonic platform.

physics.optics↗

arXiv2019

A silicon photonic add-drop filter for quantum emitters

Integration of single-photon sources and detectors to silicon-based photonics opens the possibility of complex circuits for quantum information processing. In this work, we demonstrate integration of quantum dots with a silicon photonic add-drop filter for on-chip filtering and routing of telecom single photons. A silicon microdisk resonator acts as a narrow filter that transfers the quantum dot emission and filters the background over a wide wavelength range. Moreover, by tuning the quantum dot emission wavelength over the resonance of the microdisk we can control the transmission of the emitted single photons to the drop and through channels of the add-drop filter. This result is a step toward the on-chip control of single photons using silicon photonics for applications in quantum information processing, such as linear optical quantum computation and boson sampling.

physics.optics↗

arXiv2019

A fiber-integrated single photon source emitting at telecom wavelengths

Fiber-coupled single photon sources are essential components of photonics-based quantum information processors. Most fiber-coupled single photon sources require careful alignment between fibers and quantum emitters. In this work, we present an alignment-free fiber-integrated single photon source based on an InAs/InP quantum dot emitting at telecom wavelengths. We designed a nanobeam containing the quantum dots attached to a fiber taper. The adiabatic tapered coupler of the nanobeam enables efficient light coupling to the fiber taper. Using a tungsten probe in a focused ion beam system, we transferred the nanobeam to the fiber taper. The observed fiber-coupled single photon emission occurs with a brightness of 1.5% and purity of 86%. This device provides a building block for fiber-optic quantum circuits that have various applications, such as quantum communication and distributed quantum computing.

cond-mat.mes-hall↗

arXiv2018

Large Stark Tuning of InAs/InP Quantum Dots

InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However, geometric differences in each quantum dot leads to slightly different emission wavelengths and hinders the possibility of generating multiple identical quantum emitters on the same chip. Stark tuning is an efficient technique to overcome this issue as it can control the emission energy of individual quantum dots through the quantum-confined Stark effect. Realizing this technique in InAs/InP quantum dots has previously been limited to shifts of less than 0.8 meV due to jumps in the emission energy because of additional charges at high electric field intensities. We demonstrate up to 5.1 meV of Stark tuning in the emission wavelength of InAs/InP quantum dots. To eliminate undesirable jumps to charged state, we use a thin oxide insulator to prevent carrier injection from the contacts, thereby significantly improves the tuning range of the Stark effect. Moreover, the single-photon nature and narrow linewidth of the quantum dot emission is preserved under a wide range of applied electric fields. Using photoluminescence intensity measurements and time-resolved lifetime spectroscopy we confirmed that this Stark tuning range is limited by carrier tunneling at high electric fields. This result is an important step toward integrating multiple identical quantum emitters at telecom wavelengths on-a-chip, which is crucial for realizing complex quantum photonic circuits for quantum information processing.

cond-mat.mes-hall↗

arXiv2018

Integration of Quantum Emitters with Lithium Niobate Photonics

The integration of quantum emitters with integrated photonics enables complex quantum photonic circuits that are necessary for photonic implementation of quantum simulators, computers, and networks. Thin-film lithium niobate is an ideal material substrate for quantum photonics because it can tightly confine light in small waveguides and has a strong electro-optic effect that can switch and modulate single photons at low power and high speed. However, lithium niobite lacks efficient single-photon emitters, which are essential for scalable quantum photonic circuits. We demonstrate deterministic coupling of single-photon emitters with a lithium niobate photonic chip. The emitters are composed of InAs quantum dots embedded in an InP nanobeam, which we transfer to a lithium niobate waveguide with nanoscale accuracy using a pick-and place approach. An adiabatic taper transfers single photons emitted into the nanobeam to the lithium niobate waveguide with high efficiency. We verify the single photon nature of the emission using photon correlation measurements performed with an on-chip beamsplitter. Our results demonstrate an important step toward fast, reconfigurable quantum photonic circuits for quantum information processing.

quant-ph↗