arXiv subjects

Shan Guan

Publications and source records attributed to Shan Guan.

At least 19 recordsLinked to original sources

arXiv2026

Superfast hole spin qubits enabled by uniaxial strain-boosted spin-orbit coupling

Two-dimensional (2D) electron/hole gases confined in semiconductor heterostructures suffer from weak Rashba spin-orbit coupling (SOC) for manipulating spin degreee of freedom via an electric rather than a magnetic field. Here, we show that complementary metal-oxide-semiconductor technology-accessible strain could substantially enhance the linear Rashba SOC of the top hole subband in Ge/SiGe quantum wells (QWs) to a level comparable to that of 2D Rashba materials through enhancing the mixture of the light-hole and heavy-hole bands. We further show that strongly enhanced Rashba SOC boosts the Rabi frequency of hole spin qubits confined in Ge/SiGe QWs by two orders of magnitude to an unprecedented 40 GHz, more than one order of magnitude faster than other qubit platforms. We also demonstrate that the hole spin rotation with Rabi frequency > 25 GHz enters a new regime being immune to gate control-induced electric noise, opening a new avenue to simultaneously improve the gate speed and gate fidelity. Our findings provide a new routine to substantially enhance the Rashba SOC in 2D semiconductor hole gases to a level that is great for spintronic applications.

cond-mat.mes-hall↗

arXiv2025

Protected valley splitting against interface disorder toward scalable silicon electron spin qubits

Regardless of various material design strategies, experimentally achieving substantial and controllable valley splitting in Si/SiGe quantum wells remains a central challenge for ensuring high gate uniformity. This difficulty arises from unavoidable atomic-scale disorder at the interface, caused by alloy randomness, which suppresses valley splitting and, more critically, induces large variations. Here, we demonstrate that CMOS-compatible uniaxial strain can substantially enhance valley splitting, rendering it immune to interface disorder. Atomistic pseudopotential calculations show that uniaxial strain linearly restores the valley splitting suppressed by interfacial disorder, with a large enhancement rate, while keeping disorder-induced variations within a narrow distribution. We reveal that uniaxial strain introduces a new coupling channel between bulk valleys in adjacent Brillouin zones through a small momentum transfer, which markedly reduces the susceptibility of valley splitting to interfacial disorder. These findings establish a viable route to improve gate uniformity in silicon-based spin qubits, paving the way for scalable quantum processors.

cond-mat.mes-hall↗

arXiv2025

Giant Magneto-Optical Effects in Two-Dimensional Flat-Band Antiferromagnets

In this work, we reveal giant magneto-optical responses in two-dimensional(2D) antiferromagnets with nearly flat electronic bands, based on first-principles calculations and group-theoretical analysis. We identify a record-large second-order magneto-optical Schafer-Hubert(SH) effect, featuring a polarization rotation angle of 28 degree, in monolayer antiferromagnetic RuOCl2, driven by flatband-enhanced interband optical transitions. Both the valence and conduction bands exhibit pronounced directional flatness, giving rise to highly anisotropic optical absorption and broadband hyperbolic frequency windows spanning the entire visible spectrum. This anisotropy leads to an exceptionally strong linear dichroism (LD) reaching 50%, far exceeding values reported in other 2D magnetic systems. Remarkably, the giant SH effect and LD appear at distinct photon energies, reflecting a momentum-direction-dependent crossover between flat and dispersive bands. Both responses are further amplified with increasing RuOCl2 film thickness. Our results establish flat-band antiferromagnets as a fertile platform for realizing giant nonlinear magneto-optical effects and open new avenues for 2D opto-spintronic device applications.

cond-mat.mtrl-sci↗

arXiv2025

Raman Forbidden Layer-Breathing Modes in Layered Semiconductor Materials Activated by Phonon and Optical Cavity Effects

We report Raman forbidden layer-breathing modes (LBMs) in layered semiconductor materials (LSMs). The intensity distribution of all observed LBMs depends on layer number, incident light wavelength and refractive index mismatch between LSM and underlying substrate. These results are understood by a Raman scattering theory via the proposed spatial interference model, where the naturally occurring optical and phonon cavities in LSMs enable spatially coherent photon-phonon coupling mediated by the corresponding one-dimensional periodic electronic states. Our work reveals the spatial coherence of photon and phonon fields on the phonon excitation via photon/phonon cavity engineering.

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arXiv2024

Cavity-enhanced circular dichroism in a van der Waals antiferromagnet

Broken symmetry plays a pivotal role in determining the macroscopic electrical, optical, magnetic, and topological properties of materials. Circular dichroism (CD) has been widely employed to probe broken symmetry in various systems, from small molecules to bulk crystals, but designing CD responses on demand remains a challenge, especially for antiferromagnetic materials. Here, we develop a cavity-enhanced CD technique to sensitively probe the magnetic order and broken symmetry in the van der Waals antiferromagnet FePS3. By introducing interfacial inversion asymmetry in cavity-coupled FePS3 crystals, we demonstrate that the induced CD is strongly coupled with the zig-zag antiferromagnetic order of FePS3 and can be tuned both spectrally and in magnitude by varying the cavity length and FePS3 thickness. Our findings open new avenues for using cavity-modulated CD as a sensitive diagnostic probe to detect weak broken symmetries, particularly at hidden interfaces, and in systems exhibiting hidden spin polarization or strong correlations.

cond-mat.mes-hall↗

arXiv2023

Hidden Zeeman-type spin polarization in bulk crystals

Exploring hidden effects that have been overlooked given the nominal global crystal symmetry but are indeed visible in solid-state materials has been a fascinating subject of research recently. Here, we introduce a novel hidden Zeeman-type spin polarization (HZSP) in nonmagnetic bulk crystals with sublattice structures. In the momentum space of these crystals, the doubly degenerate bands formed in a certain plane can exhibit a uniform spin configuration with opposite spin orientations perpendicular to this plane, whereas such degenerate states are spatially separated in a pair of real-space sectors. Interestingly, we find that HZSP can manifest itself in both centrosymmetric and non-centrosymmetric materials. We further demonstrate the important role of nonsymmorphic twofold screw-rotational symmetry played in the formation of HZSP. Moreover, two representative material examples, i.e., centrosymmetric WSe$_2$ and noncentrosymmetric BaBi$_4$O$_7$, are identified to show HZSP via first-principles calculations. Our finding thus not only opens new perspectives for hidden spin polarization research but also significantly broadens the range of materials towards spintronics applications.

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arXiv2021

The emergent linear Rashba spin-orbit coupling offering the fast manipulation of hole-spin qubits in germanium

The electric dipole spin resonance (EDSR) combining strong spin-orbit coupling (SOC) and electric-dipole transitions facilitates fast spin control in a scalable way, which is the critical aspect of the rapid progress made recently in germanium (Ge) hole-spin qubits. However, a puzzle is raised because centrosymmetric Ge lacks the Dresselhaus SOC, a key element in the initial proposal of the hole-based EDSR. Here, we demonstrate that the recently uncovered finite k-linear Rashba SOC of 2D holes offers fast hole spin control via EDSR with Rabi frequencies in excellent agreement with experimental results over a wide range of driving fields. We also suggest that the Rabi frequency can reach 500 MHz under a higher gate electric field or multiple GHz in a replacement by [110]oriented wells. These findings bring a deeper understanding for hole-spin qubit manipulation and offer design principles to boost the gate speed.

cond-mat.mes-hall↗

arXiv2021

Tunable magnetism in ferroelectric α-In2Se3 by hole-doping

Two-dimensional (2D) multiferroics attract intensive investigations because of underlying science and their potential applications. Although many 2D systems have been observed/predicted to be ferroelectric or ferromagnetic, 2D materials with both ferroic properties are still scarce. By using first-principles calculations, we predict that hole-doping can induce robust ferromagnetism in 2D ferroelectric α-In2Se3 due to its unique flat band structure, and the Curie temperature (TC) can be much higher than room temperature. Moreover, the doping concentration, strain, and number of layers can effectively modulate the magnetic moment and the TC of the material. Interestingly, strong magnetoelectric coupling is found at the surface of hole doped multilayer α-In2Se3, which allows non-volatile electric control of magnetization. Our work provides a feasible approach for designing/searching 2D multiferroics with great potential in future device applications, such as memory devices and sensors.

cond-mat.mtrl-sci↗

arXiv2020

Valley-dependent properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$

In a recent work, new two-dimensional materials, the monolayer MoSi$_{2}$N$_{4}$ and WSi$_{2}$N$_{4}$, have been successfully synthesized in experiment, and several other monolayer materials with the similar structure, such as MoSi$_{2}$As$_{4}$, have been predicted [{\color{blue}Science 369, 670-674 (2020)}]. Here, based on first-principles calculations and theoretical analysis, we investigate the electronic and optical properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$. We show that these materials are semiconductors, with a pair of Dirac-type valleys located at the corners of the hexagonal Brillouin zone. Due to the broken inversion symmetry and the effect of spin-orbit coupling, the valley fermions manifest spin-valley coupling, valley-contrasting Berry curvature, and valley-selective optical circular dichroism. We also construct the low-energy effective model for the valleys, calculate the spin Hall conductivity and the permittivity, and investigate the strain effect on the band structure. Our result reveals interesting valley physics in monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$, suggesting their great potential for valleytronics and spintronics applications.

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arXiv2020

Emergence of the strong tunable linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum

Two-dimensional hole gases in semiconductor quantum wells are promising platforms for spintronics and quantum computation but suffer from the lack of the $\bf{k}$-linear term in the Rashba spin-orbit coupling (SOC), which is essential for spin manipulations without magnetism and commonly believed to be a $\bf{k}$-cubic term as the lowest order. Here, contrary to conventional wisdom, we uncover a strong and tunable $\bf{k}$-linear Rashba SOC in two-dimensional hole gases (2DHG) of semiconductor quantum wells by performing atomistic pseudopotential calculations combined with an effective Hamiltonian for a model system of Ge/Si quantum wells. Its maximal strength exceeds 120 meVÅ, comparable to the highest values reported in narrow bandgap III-V semiconductor 2D electron gases, which suffers from short spin lifetime due to the presence of nuclear spin. We also illustrate that this emergent $\bf{k}$-linear Rashba SOC is a first-order direct Rashba effect, originating from a combination of heavy-hole-light-hole mixing and direct dipolar intersubband coupling to the external electric field. These findings confirm Ge-based 2DHG to be an excellent platform towards large-scale quantum computation.

cond-mat.mes-hall↗

arXiv2020

Electrically switchable hidden spin polarization in antiferroelectric crystals

Hidden spin polarization (HSP) emerges in centrosymmetric crystals where visible spin splittings in the real space can be observed because of the lack of inversion symmetry in each local sector. Starting from tight-binding models, we introduce nonsymmorphic antiferroelectric (AFE) crystals as a new class of functional materials that can exhibit strong local spin polarization. Such AFE crystals can be basically classified as in-plane and out-of-plane AFE configurations, and can be reversibly switched to the ferroelectric phase by an electric field to manifest global spin splittings, enabling a nonvolatile electrical control of spin-dependent properties. Based on first-principle calculations, we predict the realization of strong HSP in the AFE phase of a newly-discovered two-dimensional materials, quintuple-layer (QL) LiBiO$_2$. Furthermore, the spontaneous electric polarization ($\sim$ 0.3 nC/m) and the transition barrier as well as the tunable spin polarization of QL-LiBiO$_2$ are discussed.

cond-mat.mtrl-sci↗

arXiv2020

Two-dimensional antiferromagnetic Dirac fermions in monolayer TaCoTe$_2$

Dirac point in two-dimensional (2D) materials has been a fascinating subject of research. Recently, it has been theoretically predicted that Dirac point may also be stabilized in 2D magnetic systems. However, it remains a challenge to identify concrete 2D materials which host such magnetic Dirac point. Here, based on first-principles calculations and theoretical analysis, we propose a stable 2D material, the monolayers TaCoTe$_2$, as an antiferromagnetic (AFM) 2D Dirac material. We show that it has an AFM ground state with an out-of-plane Néel vector. It hosts a pair of 2D AFM Dirac points on the Fermi level in the absence of spin-orbit coupling (SOC). When the SOC is considered, a small gap is opened at the original Dirac points. Meanwhile, another pair of Dirac points appear on the Brillouin zone boundary below the Fermi level, which are robust under SOC and have a type-II dispersion. Such a type-II AFM Dirac point has not been observed before. We further show that the location of this Dirac point as well as its dispersion type can be controlled by tuning the Néel vector orientation.

cond-mat.mtrl-sci↗

arXiv2019

Valley-Layer Coupling: A New Design Principle for Valleytronics

We introduce the concept of valley-layer coupling (VLC) in two-dimensional materials, where the low-energy electronic states in the emergent valleys have valley-contrasted layer polarization such that each state is spatially localized on the top or bottom super-layer. The VLC enables a direct coupling between valley and gate electric field, opening a new route towards electrically controlled valleytronics. We analyze the symmetry requirements for the system to host VLC, demonstrate our idea via first-principles calculations and model analysis of a concrete 2D material example, and show that an electric, continuous, wide-range, and switchable control of valley polarization can be achieved by VLC. Furthermore, we find that systems with VLC can exhibit other interesting physics, such as valley-contrasting linear dichroism and optical selection of the electric polarization of interlayer excitons.

cond-mat.mes-hall↗

arXiv2019

Two-dimensional nodal-loop half metal in monolayer MnN

Two-dimensional (2D) materials with nodal-loop band crossing have been attracting great research interest. However, it remains a challenge to find 2D nodal loops that are robust against spin-orbit coupling (SOC) and realized in magnetic states. Here, based on first-principles calculations and theoretical analysis, we predict that monolayer MnN is a 2D nodal-loop half metal with fully spin polarized nodal loops. We show that monolayer MnN has a ferromagnetic ground state with out-of-plane magnetization. Its band structure shows half metallicity with three low-energy bands belonging to the same spin channel. The crossing between these bands forms two concentric nodal loops centered around the $Γ$ point near the Fermi level. Remarkably, the nodal loops and their spin polarization are robust under SOC, due to the protection of a mirror symmetry. We construct an effective model to characterize the fully polarized emergent nodal-loop fermions. We also find that a uniaxial strain can induce a loop transformation from a localized single loop circling around $Γ$ to a pair of extended loops penetrating the Brillouin zone.

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arXiv2018

Monolayer Mg$_{2}$C: Negative Poisson's ratio and unconventional 2D emergent fermions

Novel two-dimensional (2D) emergent fermions and negative Poisson's ratio in 2D materials are fascinating subjects of research. Here, based on first-principles calculations and theoretical analysis, we predict that the hexacoordinated Mg$_{2}$C monolayer hosts both exotic properties. We analyze its phonon spectrum, reveal the Raman active modes, and show that it has small in-plane stiffness constants. Particularly, under the tensile strain in the zigzag direction, the Mg$_{2}$C monolayer shows an intrinsic negative Poisson's ratio $\sim -0.023$, stemming from its unique puckered hinge structure. The material is metallic at its equilibrium state. A moderate biaxial strain can induce a metal-semimetal-semiconductor phase transition, during which several novel types of 2D fermions emerge, including the anisotropic Dirac fermions around 12 tilted Dirac points in the metallic phase, the $2$D double Weyl fermions in the semimetal phase where the conduction and valence bands touch quadratically at a single Fermi point, and the 2D pseudospin-1 fermions at the critical point of the semimetal-semiconductor phase transition where three bands cross at a single point on the Fermi level. In addition, uniaxial strains along the high-symmetry directions break the three-fold rotational symmetry and reduce the number of Dirac points. Interestingly, it also generates 2D type-II Dirac points. We construct effective models to characterize the properties of these novel fermions. Our result reveals Mg$_{2}$C monolayer as an intriguing platform for the study of novel 2D fermions, and also suggests its great potential for nanoscale device applications.

cond-mat.mes-hall↗

arXiv2018

Tunable ferroelectricity and anisotropic electric transport in monolayer $β$-GeSe

Low-dimensional ferroelectricity has attracted tremendous attention due to its huge potential in device applications. Here, based on first-principles calculations, we predict the existence of spontaneous in-plane electrical polarization and ferroelectricity in monolayer $β$-GeSe, a polymorph of GeSe with a boat conformation newly synthesized in experiment. The magnitude of the polarization is about $0.16$ nC/m, which is comparable to that of monolayer SnTe studied in recent experiment, and the intrinsic Curie temperature is estimated to be above 200 K. Interestingly, owing to its puckered structure, the physical properties of $β$-GeSe can be easily controlled by strain. The Curie temperature can be raised above room temperature by applying a ($\sim 1\%$) tensile strain, and the magnitude of polarization can be largely increased by strains in either armchair or zigzag directions. Furthermore, we find that for the case with electron doping, applying strain can readily tune the anisotropic electric transport with the preferred conducting direction rotated by $90^\circ$, which is connected with a strain-induced Lifshitz transition. The ratio between the effective masses along the two in-plane directions can undergo a dramatic change of two orders of magnitude even by a 2% strain. Our result reveals monolayer $β$-GeSe as a promising platform for exploring ferroelectricity in two-dimensions and for nanoscale mechano-electronic device applications.

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arXiv2018

Hybrid Structures and Strain-Tunable Electronic Properties of Carbon Nanothreads

The newly synthesized ultrathin carbon nanothreads have drawn great attention from the carbon community. Here, based on first-principles calculations, we investigate the electronic properties of carbon nanothreads under the influence of two important factors: the Stone-Wales (SW) type defect and the lattice strain. The SW defect is intrinsic to the polymer-I structure of the nanothreads and is a building block for the general hybrid structures. We find that the bandgap of the nanothreads can be tuned by the concentration of SW defects in a wide range of $3.92 \sim 4.82$ eV, interpolating between the bandgaps of $sp^{3}$-(3,0) structure and the polymer-I structure. Under strain, the bandgaps of all the structures, including the hybrid ones, show a nonmonotonic variation: the bandgap first increases with strain, then drops at large strain above 10%. The gap size can be effectively tuned by strain in a wide range ($>0.5$ eV). Interestingly, for $sp^{3}$-(3,0) structure, a switch of band ordering occurs under strain at the valence band maximum, and for the polymer-I structure, an indirect-to-direct-bandgap transition occurs at about 8% strain. The result also indicates that the presence of SW defects tends to stabilize the bandgap size against strain. Our findings suggest the great potential of structure- and strain-engineered carbon nanothreads in optoelectronic and photoelectrochemical applications as well as stress sensors.

cond-mat.mtrl-sci↗

arXiv2018

Nonsymmorphic-symmetry-protected hourglass Dirac loop, nodal line, and Dirac point in bulk and monolayer $X_3$SiTe$_6$ ($X=$ Ta, Nb)

Nonsymmorphic space group symmetries can generate exotic band-crossings in topological metals and semimetals. Here, based on symmetry analysis and first-principles calculations, we reveal rich band-crossing features in the existing layered compounds Ta$_3$SiTe$_6$ and Nb$_3$SiTe$_6$, enabled by nonsymmorphic symmetries. We show that in the absence of spin-orbit coupling (SOC), these three-dimensional (3D) bulk materials possess accidental Dirac loops and essential fourfold nodal lines. In the presence of SOC, there emerges an hourglass Dirac loop---a fourfold degenerate nodal loop, on which each point is a neck-point of an hourglass-type dispersion. We show that this interesting type of band-crossing is protected and dictated by the nonsymmorphic space group symmetries, and it gives rise to drumhead-like surface states. Furthermore, we also investigate these materials in the monolayer form. We show that these two-dimensional (2D) monolayers host nodal lines in the absence of SOC, and the nodal lines transform to essential spin-orbit Dirac points when SOC is included. Our work suggests a realistic material platform for exploring the fascinating physics associated with nonsymmorphic band-crossings in both 3D and 2D systems.

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