arXiv subjects

Shanhu Wang

Publications and source records attributed to Shanhu Wang.

4 recordsLinked to original sources

arXiv2026

Intrinsic Concept Extraction Based on Compositional Interpretability

Unsupervised Concept Extraction aims to extract concepts from a single image; however, existing methods suffer from the inability to extract composable intrinsic concepts. To address this, this paper introduces a new task called Compositional and Interpretable Intrinsic Concept Extraction (CI-ICE). The CI-ICE task aims to leverage diffusion-based text-to-image models to extract composable object-level and attribute-level concepts from a single image, such that the original concept can be reconstructed through the combination of these concepts. To achieve this goal, we propose a method called HyperExpress, which addresses the CI-ICE task through two core aspects. Specifically, first, we propose a concept learning approach that leverages the inherent hierarchical modeling capability of hyperbolic space to achieve accurate concept disentanglement while preserving the hierarchical structure and relational dependencies among concepts; second, we introduce a concept-wise optimization method that maps the concept embedding space to maintain complex inter-concept relationships while ensuring concept composability. Our method demonstrates outstanding performance in extracting compositionally interpretable intrinsic concepts from a single image.

cs.CV↗

arXiv2026

Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor

The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is highly desirable but challenging for p-type transistors due to limited semiconductors with reliable hole transport and their high activation energies. Here, we achieved a robust yet efficient p-type transistor by heterogeneously integrating an ultra-wide-bandgap semiconductor and a high-k dielectric layer through van der Waals integration. The p-type transistor employs a two-dimensional hole channel on hydrogenated diamond (bandgap 5.6 eV) combined with a high-k (30.5) SrTiO3 perovskite membrane. At room temperature, the transistor exhibits stable operation with a high on-current (~200 mA/mm), low subthreshold swing (70 mV/dec), high hole mobility (566 cm^2/Vs to 572 cm^2/Vs) and high on-off ratio (~10^9). Furthermore, tuning annealing temperature allows operation in either enhancement or depletion mode. The robust p-type transistor with high efficiency holds great potential for future power electronics, UV optoelectronics, and harsh-environment electronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Artificial ferroelectric-like hysteresis in antiferroelectrics with non-uniform disorder

Antiferroelectrics exhibit unique double-hysteresis polarization loops, which have garnered significant attention due to their potential applications such as energy storage, electromechanical transduction, as well as synapse devices. However, numerous antiferroelectric materials have been reported to display signs of hysteresis loops resembling those of ferroelectric materials, and a comprehensive understanding remains elusive. In this work, we provide a phenomenological model that reproduces such widely observed artificial ferroelectric hysteresis with a superposition of numerous disordered antiferroelectric loops that have varying antiferroelectric-to-ferroelectric transition fields, particularly when these field ranges intersect. Experimentally, we realized such artificial ferroelectric-like hysteresis loops in the prototypical antiferroelectric PbZrO$_3$ and PbHfO$_3$ thin films, by introducing non-uniform local disorder (e.g., defects) via fine-tuning of the film growth conditions. These ferroelectric-like states are capable of persisting for several hours prior to transitioning back into the thermodynamically stable antiferroelectric ground state. Those results provide insights into the fundamental impact of disorder on the AFE properties and new possibilities of disorder-tailored functions.

cond-mat.mtrl-sci↗

arXiv2025

Etching-free dual-lift-off for direct patterning of epitaxial oxide thin films

Although monocrystalline oxide films offer broad functional capabilities, their practical use is hampered by challenges in patterning. Traditional patterning relies on etching, which can be costly and prone to issues like film or substrate damage, under-etching, over-etching, and lateral etching. In this study, we introduce a dual-lift-off method for direct patterning of oxide films, circumventing the etching process and associated issues. Our method involves an initial lift-off of amorphous Sr$_3$Al$_2$O$_6$ or Sr$_4$Al$_2$O$_7$ ($a$SAO) through stripping the photoresist, followed by a subsequent lift-off of the functional oxide thin films by dissolving the $a$SAO layer. $a$SAO functions as a ``high-temperature photoresist", making it compatible with the high-temperature growth of monocrystalline oxides. Using this method, patterned ferromagnetic La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ and ferroelectric BiFeO$_3$ were fabricated, accurately mirroring the shape of the photoresist. Our study presents a straightforward, flexible, precise, environmentally friendly, and cost-effective method for patterning high-quality oxide thin films.

cond-mat.mtrl-sci↗