arXiv subjects

Shanming Ke

Publications and source records attributed to Shanming Ke.

4 recordsLinked to original sources

arXiv2026

Optically driven thermodynamic transition from free- to locked-epitaxy

Controlling crystallographic orientation in quasi-van der Waals (vdW) epitaxy remains a fundamental challenge, especially for material systems located near the boundary between weakly and strongly coupled growth regimes. In such marginal systems, epitaxial selection is governed by a delicate thermodynamic competition between surface-energy penalties and interfacial interaction gains, giving rise to two archetypal limits: vdW-dominated free-epitaxy and strong interfacial coupling dominated locked-epitaxy. However, dynamically driving transitions between these regimes has remained elusive. Here, we demonstrate that external light irradiation can deterministically induce such a transition. Using the thermodynamically frustrated Fe4N/mica interface as a model system, we show that photo-excited carriers act as a chemical potentiator, significantly enhancing the interfacial chemical affinity. Within a quantitative thermodynamic description, this optical modulation increases the locking criterion (I_lock)-defined as the ratio of interfacial energy gain to surface-energy cost-beyond its critical threshold. As a result, the system switches from vdW-dominated free-epitaxy with (001) orientation to chemically locked-epitaxy with (111) orientation. Our findings establish light as a non-invasive and switchable control knob to dynamically reconfigure the interfacial energy landscape in quasi-vdW epitaxy, enabling programmable access to distinct epitaxial states beyond intrinsic material limitations.

cond-mat.mtrl-sci↗

arXiv2025

Universal thermodynamic framework for quasi-van der Waals epitaxy

van der Waals (vdW) epitaxy is conventionally regarded as a rotation-free and strain-free growth mode driven by weak, isotropic interactions, yet many interfaces paradoxically exhibit strictly locked orientations that defy standard surface-energy models. We resolve this inconsistency by establishing a unified quantitative framework for 2D-3D systems, in which strong electrostatic and chemical interactions compete with entropic forces. We introduce a two-tier descriptor set-the predictive index (I_pre) and the thermodynamic locking criterion (I_lock)-to quantify the energetic sufficiency for locked epitaxy. Our theory accurately predicted the competitive interactions at the interface within the 2D-3D system, precisely characterized whether the epitaxial layer underwent free growth or was constrained in a locked growth mode, demonstrating robust consistency with diverse experimental observations. This framework unifies orientation selection in 3D-on-2D films and rotational locking in 2D-on-3D layers within a single-phase diagram. Our work provides a generalizable, predictive route to controlling epitaxial orientation across a broad spectrum of layered heterostructure

cond-mat.mtrl-sci↗

arXiv2023

Flexo-photovoltaic effect and above-bandgap photovoltage in halide perovskites

Halide perovskites have outstanding photovoltaic properties which have been optimized through interfacial engineering. However, as these materials approach the limits imposed by the physics of semiconductor junctions, it is urgent to explore alternatives, such as the bulk photovoltaic effect, whose physical origin is different and not bound by the same limits. In this context, we focus on the flexo-photovoltaic effect, a type of bulk photovoltaic effect that was recently observed in oxides under strain gradients. We have measured the flexo-photovoltaic effect of MAPbBr3 and MAPbI3 crystals under bending and found it to be orders of magnitude larger than for SrTiO3, the benchmark flexo-photovoltaic oxide. For sufficiently large strain gradients, photovoltages bigger than the bandgap can be produced. Bulk photovoltaic effects are additive and, for MAPbI3, the flexo-photovoltage exists on top of a native bulk photovoltage that is hysteretic, consistent with the electrically switchable macroscopic polarization of this material. The results suggest that harnessing the flexo-photovoltaic effect through strain gradient engineering can provide a functional leap forward for halide perovskites.

cond-mat.mtrl-sci↗

arXiv2019

Observation of a Room Temperature Two-dimensional Ferroelectric Metal

Materials with reduced dimensions have been shown to host a wide variety of exotic properties and novel quantum states that often defy textbook wisdom1-5. Ferroelectric polarization and metallicity are well-known examples of mutually exclusive properties that cannot coexist in bulk solids because the net electric field in a metal can be fully screened by free electrons6. An atomically thin metallic layer capped by insulating layers has shown decent conductivity at room temperature7. Moreover, a penetrating polarization field can be employed to induce an ion displacement and create an intrinsic polarization in the metallic layer. Here we demonstrate that a ferroelectric metal can be artificially synthesized through imposing a strong polarization field in the form of ferroelectric/unit-cell-thin metal superlattices. In this way the symmetry of an atomically thin conductive layer can be broken and manipulated by a neighboring polar field, thereby forming a two-dimensional (2D) ferroelectric metal. The fabricated of (SrRuO3)1/(BaTiO3)10 superlattices exhibit ferroelectric polarization in an atomically thin layer with metallic conductivity at room temperature. A multipronged investigation combining structural analyses, electrical measurements, and first-principles electronic structure calculations unravels the coexistence of 2D electrical conductivity in the SrRuO3 monolayer accompanied by the electric polarization. Such 2D ferroelectric metal paves a novel way to engineer a quantum multi-state with unusual coexisting properties, such as ferroelectrics, ferromagnetics and metals, manipulated by external fields8,9.

cond-mat.mtrl-sci↗