SearcharxivSearch

arXiv subjects

Shanquan Chen

Publications and source records attributed to Shanquan Chen.

4 recordsLinked to original sources

RAIL: Rethinking Auditory Intelligence in Large Audio-Language Models with a CHC-Grounded Benchmark

Humans process rich auditory environments through tightly integrated cognitive capabilities such as audio perception, audio reasoning, and memory. Despite recent progress in large audio-language models (LALMs) across speech understanding and multimodal audio reasoning, current evaluation paradigms remain largely task- or modality-centric, focusing on end performance while overlooking underlying auditory cognitive behaviours. This reveals a fundamental gap between how auditory cognition is understood in humans and how it is evaluated in LALMs, particularly in the lack of frameworks that operationalise cognitive principles beyond task-level metrics to systematically capture model behaviour. In this work, we introduce RAIL, a human-centric evaluation paradigm grounded in the Cattell-Horn-Carroll (CHC) cognitive framework. RAIL formalises auditory cognition into five core capabilities and develop them into structured evaluation tasks that probe how models process, retain, and integrate auditory information. We further construct a cognitively grounded benchmark with principled data curation and human-aligned evaluation protocols. Evaluating 26 state-of-the-art LALMs, we find that current models exhibit highly uneven performance across cognitive abilities. RAIL establishes a new evaluation paradigm that moves beyond task-centric benchmarking toward cognitively grounded assessment of auditory intelligence.

cs.SD

Nitrogen doping induced metal-insulator transition with iso-symmetric character in rutile VO2

Metal-insulator transitions (MITs) in correlated oxides offer immense potential for next-generation Mottronic devices. However, their integration into practical applications is often hindered by the coupling of MITs with symmetry-lowering structural phase transitions, which limits switching speed and endurance. In this study, we engineered an iso-symmetric MIT on average in epitaxial rutile VO2 thin films via an in-situ nitrogen doping strategy. Nitrogen incorporation effectively suppresses V-V dimerization, enabling an iso-symmetric MIT, while preserving the original crystal symmetry. Furthermore, in-operando time-resolved optical reflectivity measurements revealed a shortened switching time in nitrogen-doped films, highlighting their enhanced performance. Our findings provide critical insights into the underlying mechanisms of MITs and introduce anion doping as a powerful tool for tailoring phase transitions in strongly correlated electron systems. This approach opens new avenues for the development of high-performance electronic and photonic devices.

cond-mat.mtrl-sci

Small polarons mediated near-room-temperature metal-insulator transition in vanadium dioxide and their hopping dynamics

Researchers pursuing advanced photoelectric devices have discovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Despite theoretical investigations suggesting that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellipsometry measurements and first-principles calculations. We illustrate the complementary role of polaron dynamics in facilitating Peierls and Mott transitions, thereby contributing to the MIT processes. Furthermore, our observations and characterizations of conventional metallic and correlated plasmons in the respective phases of the VO2 film offer valuable insights into their electron structures. This investigation enhances comprehension of the MIT mechanism in correlated systems and underscores the roles of polarons, lattice distortions, and electron correlations in facilitating phase transition processes in strongly-correlated systems. Additionally, the detailed detection of small polarons and plasmons serves as inspiration for the development of new device functionalities.

physics.app-ph

Spin State Disproportionation in Insulating Ferromagnetic LaCoO3 Epitaxial Thin Films

The origin of insulating ferromagnetism in epitaxial LaCoO3 films under tensile strain remains elusive despite extensive research efforts have been devoted. Surprisingly, the spin state of its Co ions, the main parameter of its ferromagnetism, is still to be determined. Here, we have systematically investigated the spin state in epitaxial LaCoO3 thin films to clarify the mechanism of strain induced ferromagnetism using element-specific x-ray absorption spectroscopy and dichroism. Combining with the configuration interaction cluster calculations, we unambiguously demonstrate that Co3+ in LaCoO3 films under compressive strain (on LaAlO3 substrate) are practically a low spin state, whereas Co3+ in LaCoO3 films under tensile strain (on SrTiO3 substrate) have mixed high spin and low spin states with a ratio close to 1:3. From the identification of this spin state ratio, we infer that the dark strips observed by high-resolution scanning transmission electron microscopy indicate the position of Co3+ high spin state, i.e., an observation of a spin state disproportionation in tensile-strained LaCoO3 films. This consequently explains the nature of ferromagnetism in LaCoO3 films.

cond-mat.mtrl-sci