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Shaokui Su

Publications and source records attributed to Shaokui Su.

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The Sample Pre-selection and Characterization Station at the SECUF: Instrumentation, Capabilities, and Representative Scientific Achievements

The Synergetic Extreme Condition User Facility (SECUF) is a comprehensive, state-of-the-art user facility designed to provide integrated extreme physical conditions-including ultrahigh pressure, ultralow temperature, strong magnetic fields, and ultrafast optical fields-for frontier research in condensed matter physics and materials science. Within SECUF, the F2 Sample Pre-selection and Characterization Station plays a pivotal supporting role. Its mission is to provide comprehensive sample synthesis, processing, pre-screening, and characterization services to prepare high-quality specimens for subsequent experiments under extreme conditions. This paper details the specifications and performance of ten core instrument systems within these units. Furthermore, we highlight several breakthrough scientific achievements enabled by the F2 Station, encompassing the discovery of novel quantum spin supersolid states, pressure-induced high-temperature superconductivity in nickelates, giant anomalous Hall angles, and molecular water in lunar soil. We also outline ongoing technical developments that expand the station's capabilities, such as integrated high-pressure cells and self-built ancillary measurement systems.

cond-mat.str-el

Hybridization Gap and Edge States in Strained-layer InAs/In0.5Ga0.5Sb Quantum Spin Hall Insulator

The hybridization gap in strained-layer InAs/InxGa1-xSb quantum spin Hall insulators (QSHIs) is significantly enhanced compared to binary InAs/GaSb QSHI structures, where the typical indium composition, x, ranges between 0.2 and 0.4. This enhancement prompts a critical question: to what extent can quantum wells (QWs) be strained while still preserving the fundamental QSHI phase? In this study, we demonstrate the controlled molecular beam epitaxial (MBE) growth of highly strained-layer QWs with an indium composition of x = 0.5. These structures possess a substantial compressive strain within the In0.5Ga0.5Sb QW. Detailed crystal structure analyses confirm the exceptional quality of the resulting epitaxial films, indicating coherent lattice structures and the absence of visible dislocations. Transport measurements further reveal that the QSHI phase in InAs/In0.5Ga0.5Sb QWs is robust and protected by time-reversal symmetry. Notably, the edge states in these systems exhibit giant magnetoresistance when subjected to a modest perpendicular magnetic field. This behavior is in agreement with the Z2 topological property predicted by the Bernevig-Hughes-Zhang (BHZ) model, confirming the preservation of topologically protected edge transport in the presence of enhanced bulk strain.

cond-mat.mtrl-sci