arXiv subjects

Shashank Kumar Ojha

Publications and source records attributed to Shashank Kumar Ojha.

At least 19 recordsLinked to original sources

arXiv2026

When electrons meet ferroelastic domain walls in Strontium Titanate

Strontium titanate (SrTiO$_3$), famously described by Nobel laureate K. A. Müller as the "drosophila of solid-state physics", has been extensively investigated over the last seventy five years for its intricate coupling of structural, electronic, and dielectric properties and continues to serve as a foundational platform for advancing oxide electronics. In its pristine form, SrTiO$_3$ exhibits quantum paraelectric behavior below 35 K and undergoes an antiferrodistortive phase transition near 105 K. This transition generates ferroelastic twin domains separated by a dense network of domain walls, which function as nanoscale structural defects with far-reaching consequences. While the static influence of ferroelastic domain walls on carrier transport in electron-doped SrTiO$_3$ is well established, recent experimental results show that the emergence of polarity at these walls, combined with strain fields and inherent quantum fluctuations, induces correlated dynamical phenomena such as glass-like relaxations of electrons and memory effects. In this review, we highlight these recent advances, focusing on the subtle interplay between the emergence of nanoscale polar order, quantum fluctuations, and long-range strain fields. We propose that understanding charge carrier dynamics in the background of these complex ferroelastic domain wall landscapes offers a new paradigm for exploring electronic transport in the presence of local polar order and quantum fluctuations, with broad implications for correlated oxides.

cond-mat.str-el↗

arXiv2026

Topological textures and emergent altermagnetic signatures in ultrathin BiFeO3

Magnetoelectric multiferroics, materials with intrinsically coupled electric polarization and magnetic order, promise ultralow-power switching, nonvolatile memory, and energy-efficient signal transduction. Yet practical deployment demands ultrathin films down to the atomic limit, where both orders typically degrade. Maintaining both order parameters at the thinnest scales in complex oxides remains a tremendous challenge, as uncompensated bound charge drives nanoscale depolarization in most ferroelectrics, while off-stoichiometry, reduced anisotropy, and charge transfer can produce magnetic dead layers in ultrathin oxides at substrate interfaces. Here, we realize a multiferroic phase of BiFeO3 that not only sustains both order parameters at room temperature with no dead layer but also exhibits signatures of emergent altermagnetism in the four-unit-cell, ultrathin limit. First-principles calculations, spin symmetry analysis, atomic-resolution imaging, and angle-resolved magnetic imaging reveal that short-circuit electrostatic boundary conditions, together with epitaxial strain, drive a continuous second-order, thickness-driven phase transition that enables the formation of multiferroic topological textures. Moreover, the imposed boundary conditions stabilize a d-wave altermagnetic time-reversal symmetry breaking, with corresponding signatures observed in magnetic circular dichroism. Collectively, these results establish a pathway to stabilize unconventional multiferroicity at device-relevant thicknesses, reframing scaling limits for oxide electronics.

cond-mat.mtrl-sci↗

arXiv2026

Anisotropic magnon transport in an antiferromagnetic trilayer heterostructure: is BiFeO$_3$ an altermagnet?

Magnons provide a route to ultra-fast transport and non-destructive readout of spin-based information transfer. Here, we report magnon transport and its emergent anisotropic nature in BiFeO$_3$ layers confined between ultrathin layers of the antiferromagnet LaFeO$_3$. Due to the confined state, BiFeO$_3$ serves as an efficient magnon transmission channel as well as a magnetoelectric knob by which to control the stack by means of an electric field. We discuss the mechanism of the anisotropic spin transport based on the interaction between the antiferromagnetic order and the electric field. This allows us to manipulate and amplify the spin transport in such a confined geometry. Furthermore, lower crystal symmetric and suppression of the spin cycloid in ultrathin BiFeO$_3$ stabilizes a non-trivial antiferromagnetic state exhibiting symmetry-protected spin-split bands that provide the non-trivial sign inversion of the spin current, which is a characteristic of an altermagnet. This work provides an understanding of the anisotropic spin transport in complex antiferromagnetic heterostructures where ferroelectricity and altermagnetism coexist, paving the way for a new route to realize electric-field control of a novel state of magnetism.

cond-mat.mes-hall↗

arXiv2025

Symmetry-designed BiFeO3 single domain spin cycloid for efficient spintronics

Deterministic control of coupled ferroelectric and antiferromagnetic orders remains a central challenge in multiferroics, limiting their integration into functional magnetoelectrics and magnonic-devices. (111)pc BiFeO3 with a robust single spin cycloid, offers direct magnetoelectric-coupling and a platform for efficient spin transport, yet multi-magnetic domains and ferroelectric-fatigue have prevented reproducible control. Here, we show that anisotropic-compressive in-plane strain stabilizes a single antiferromagnetic domain with unique spin-cycloid vector, by breaking the symmetry of the (111)pc plane. Epitaxial BiFeO3 films grown on orthorhombic NdGaO3 (011)o [(111)pc] substrates impose the required anisotropic in-plane strain and stabilizes single antiferromagnetic domain, as confirmed through direct imaging with scanning NV microscopy and non-resonant-x-ray-magnetic-scattering. Remarkably, these engineered films exhibit deterministic and non-volatile 180° switching of ferroelectric and single antiferromagnetic domains over 1,000 cycles. The monodomain state also enables anisotropic and threefold enhanced magnon transport with reduced scattering. Thus, symmetry-designed (111)pc monodomain BiFeO3 offers a robust platform for advanced magnetoelectric and magnonic applications.

cond-mat.mtrl-sci↗

arXiv2025

Colossal enhancement of spin transmission through magnon confinement in an antiferromagnet

Since Felix Bloch's introduction of the concept of spin waves in 1930, magnons (the quanta of spin waves) have been extensively studied in a range of materials for spintronics, particularly for non-volatile logic-in-memory devices. Controlling magnons in conventional antiferromagnets and harnessing them in practical applications, however, remains a challenge. In this letter, we demonstrate highly efficient magnon transport in an LaFeO$_3$/BiFeO$_3$/LaFeO$_3$ all-antiferromagnetic system which can be controlled electrically, making it highly desirable for energy-efficient computation. Leveraging spin-orbit-driven spin-charge transduction, we demonstrate that this material architecture permits magnon confinement in ultrathin antiferromagnets, enhancing the output voltage generated by magnon transport by several orders of magnitude, which provides a pathway to enable magnetoelectric memory and logic functionalities. Additionally, its non-volatility enables ultralow-power logic-in-memory processing, where magnonic devices can be efficiently reconfigured via electrically controlled magnon spin currents within magnetoelectric channels.

cond-mat.mtrl-sci↗

arXiv2025

Site-selective polar compensation of Mott electrons in a double perovskite heterointerface

Double perovskite oxides (DPOs) with two transition metal ions ($A_2$$BB^\prime$O$_6$) offer a fascinating platform for exploring exotic physics and practical applications. Studying these DPOs as ultrathin epitaxial thin films on single crystalline substrates can add another dimension to engineering electronic, magnetic, and topological phenomena. Understanding the consequence of polarity mismatch between the substrate and the DPO would be the first step towards this broad goal. We investigate this by studying the interface between a prototypical insulating DPO Nd$_2$NiMnO$_6$ and a wide-band gap insulator SrTiO$_3$. The interface is found to be insulating in nature. By combining several experimental techniques and density functional theory, we establish a site-selective charge compensation process that occurs explicitly at the Mn site of the film, leaving the Ni sites inert. We further demonstrate that such surprising selectivity, which cannot be explained by existing mechanisms of polarity compensation, is directly associated with their electronic correlation energy scales. This study establishes the crucial role of Mott physics in polar compensation process and paves the way for designer doping strategies in complex oxides.

cond-mat.mtrl-sci↗

arXiv2025

Beyond being free: glassy dynamics of SrTiO$_3$-based two-dimensional electron gas

Electron glasses offer a convenient laboratory platform to study glassy dynamics. Traditionally, the interplay between long-range Coulomb interactions and disorder is deemed instrumental in stabilizing the electron glass phase. Existing experimental studies on electron glass have focused on doped semiconductors, strongly correlated systems, granular systems, etc., all of which are far from the well-delocalized limit. In this work, we expand the study of electron glasses to a well-known quantum paraelectric SrTiO$_3$ (STO) and unveil a new scenario: how naturally occurring ferroelastic twin walls of STO could result in glassy electrons, even in a metallic state. We show that the emergent two-dimensional electron gas at the $γ$-Al$_2$O$_3$/STO interface exhibits long-lasting temporal relaxations in resistance and memory effects at low temperatures, which are hallmarks of glassiness. We also demonstrate that the glass-like relaxations could be further tuned by application of an electric field. This implies that the observed glassy dynamics is connected with the development of polarity near the structural twin walls of STO and the complex interactions among them, arising from the coupling between ferroelastic and ferroelectric orders. The observation of this glassy metal phase not only extends the concept of electron glasses to metallic systems with multiple order parameters but also contributes to the growing understanding of the fascinating and diverse physical phenomena that emerge near the quantum critical point.

cond-mat.str-el↗

arXiv2024

Morphogenesis of Spin Cycloids in a Non-collinear Antiferromagnet

Pattern formation in spin systems with continuous-rotational symmetry (CRS) provides a powerful platform to study emergent complex magnetic phases and topological defects in condensed-matter physics. However, its understanding and correlation with unconventional magnetic order along with high-resolution nanoscale imaging is challenging. Here, we employ scanning NV magnetometry to unveil the morphogenesis of spin cycloids at both the local and global scales within a single ferroelectric domain of (111)-oriented BiFeO$_3$ (which is a non-collinear antiferromagnet), resulting in formation of a glassy labyrinthine pattern. We find that the domains of locally oriented cycloids are interconnected by an array of topological defects and exhibit isotropic energy landscape predicted by first-principles calculations. We propose that the CRS of spin-cycloid propagation directions within the (111) drives the formation of the labyrinthine pattern and the associated topological defects such as antiferromagnetic skyrmions. Unexpectedly, reversing the as-grown ferroelectric polarization from [$\bar{1}$$\bar{1}$$\bar{1}$] to [111] induces a magnetic phase transition, destroying the labyrinthine pattern and producing a deterministic non-volatile non cycloidal, uniformly magnetized state. These findings highlight that (111)-oriented BiFeO$_3$ is not only important for studying the fascinating subject of pattern formation but could also be utilized as an ideal platform for integrating novel topological defects in the field of antiferromagnetic spintronics.

cond-mat.mtrl-sci↗

arXiv2024

Quantum fluctuations lead to glassy electron dynamics in the good metal regime of electron doped KTaO3

One of the central challenges in condensed matter physics is to comprehend systems that have strong disorder and strong interactions. In the strongly localized regime, their subtle competition leads to glassy electron dynamics which ceases to exist well before the insulator-to-metal transition is approached as a function of doping. Here, we report on the discovery of glassy electron dynamics deep inside the good metal regime of an electron-doped quantum paraelectric system: KTaO$_3$. We reveal that upon excitation of electrons from defect states to the conduction band, the excess injected carriers in the conduction band relax in a stretched exponential manner with a large relaxation time, and the system evinces simple aging phenomena - a telltale sign of glassy dynamics. Most significantly, we observe a critical slowing down of carrier dynamics below 35 K, concomitant with the onset of quantum paraelectricity in the undoped KTaO$_3$. Our combined investigation using second harmonic generation technique, density functional theory and phenomenological modeling demonstrates quantum fluctuation-stabilized soft polar modes as the impetus for the glassy behavior. This study addresses one of the most fundamental questions regarding the potential promotion of glassiness by quantum fluctuations and opens a route for exploring glassy dynamics of electrons in a well-delocalized regime.

cond-mat.str-el↗

arXiv2023

Orthorhombic distortion drives orbital ordering in an antiferromagnetic 3$d^1$ Mott insulator

The orbital, which represents the shape of the electron cloud, very often strongly influences the manifestation of various exotic phenomena, e.g., magnetism, metal-insulator transition, colossal magnetoresistance, unconventional superconductivity etc. in solid-state systems. The observation of the antiferromagnetism in $RE$TiO$_3$ ($RE$=rare earth) series has been puzzling since the celebrated Kugel-Khomskii model of spin-orbital super exchange predicts ferromagnetism in an orbitally degenerate $d^1$ systems. Further, the existence of the orbitally ordered vs. orbital liquid phase in both antiferromagnetic and paramagnetic phase have been unsettled issues thus far. To address these long-standing questions, we investigate single crystalline film of PrTiO$_3$. Our synchrotron X-ray diffraction measurements confirm the retention of bulk-like orthorhombic ($D_{2h}$) symmetry in the thin film geometry. We observe similar X-ray linear dichroism signal in both paramagnetic and antiferromagnetic phase, which can be accounted by ferro orbital ordering (FOO). While the presence of $D_{2h}$ crystal field does not guarantee lifting of orbital degeneracy always, we find it to be strong enough in these rare-earth titanates, leading to the FOO state. Thus, our work demonstrates the orthorhombic distortion is the driving force for the orbital ordering of antiferromagnetic $RE$TiO$_3$.

cond-mat.str-el↗

arXiv2023

Flux-flow instability across Berezinskii Kosterlitz Thouless phase transition in KTaO$_3$ (111) based superconductor

The nature of energy dissipation in 2D superconductors under perpendicular magnetic field at small current excitations has been extensively studied over the past two decades. However, dissipation mechanisms at high current drives remain largely unexplored. Here we report on the distinct behavior of energy dissipation in the AlOx/KTaO$_3$ (111) system hosting 2D superconductivity in the intermediate disorder regime. The results show that below the Berezinskii Kosterlitz Thouless (BKT) phase transition temperature ($T_\mathrm{BKT}$), hot-spots and Larkin Ovchinnikov type flux-flow instability (FFI) are the major channels of dissipation, leading to pronounced voltage instability at large currents. Furthermore, such FFI leads to a rare observation of clockwise hysteresis in current-voltage characteristics within the temperature range $T_\mathrm{BKT} < T < T_\mathrm{C}$ ($T_\mathrm{C}$ is superconducting transition temperature). These findings deepen our understanding of how a BKT system ultimately transforms to a normal state under increasing current.

cond-mat.supr-con↗

arXiv2022

Hole doping in a negative charge transfer insulator

$RE$NiO$_3$ is a negative charge transfer energy system and exhibits a temperature-driven metal-insulator transition (MIT), which is also accompanied by a bond disproportionation (BD) transition. In order to explore how hole doping affects the BD transition, we have investigated the electronic structure of single-crystalline thin films of Nd$_{1-x}$Ca$_x$NiO$_3$ by synchrotron based experiments and {\it ab-initio} calculations. For a small value of $x$, we find that the doped holes are localized on one or more Ni sites around the dopant Ca$^{2+}$ ions, while the BD state for the rest of the lattice remains intact. The effective charge transfer energy ($Δ$) increases with Ca concentration and the formation of BD phase is not favored above a critical $x$, suppressing the insulating phase. Our present study firmly demonstrates that the appearance of BD mode is essential for the MIT and settles a long-standing debate about the role of structural distortions for the MIT of the $RE$NiO$_3$ series.

cond-mat.str-el↗

arXiv2022

Electronic and magnetic properties of epitaxial thin film of Nd\tsubscript{0.5}Ba\tsuscriptb{0.5}MnO\tsubscript{3}

Contradictory reports about the electronic and magnetic behavior of bulk Nd0:5Ba0:5MnO3 with uniform disorder exist in the literature. In this work, we investigate the thin films of Nd0:5Ba0:5MnO3, grown by pulsed laser deposition. The success of epitaxial growth in a layer-by-layer mode and high quality of the films have been confirmed by in-situ reflection high energy electron diffraction, atomic force microscopy, X-ray reflectivity, and, X-ray diffraction. These films are found to be insulting and exhibit spin-glass behavior at low temperatures. The study offers an opportunity to tune the competition between charge/orbital ordering and ferromagnetism in half-doped manganites through heterostructure engineering.

cond-mat.mtrl-sci↗

arXiv2021

Electron trapping and detrapping in an oxide two-dimensional electron gas: The role of ferroelastic twin walls

The choice of electrostatic gating over the conventional chemical doping for phase engineering of quantum materials is attributed to the fact that the former can reversibly tune the carrier density without affecting the system's level of disorder. However, this proposition seems to break down in field-effect transistors involving SrTiO$_3$ (STO) based two-dimensional electron gases. Such peculiar behavior is associated with the electron trapping under an external electric field. However, the microscopic nature of trapping centers remains an open question. In this paper, we investigate electric field-induced charge trapping/detrapping phenomena at the conducting interface between band insulators $γ$-Al$_2$O$_3$ and STO. Our transport measurements reveal that the charge trapping under +ve back gate voltage ($V_g$) above the tetragonal to cubic structural transition temperature ($T_c$) of STO is contributed by the electric field-assisted thermal escape of electrons from the quantum well, and the clustering of oxygen vacancies (OVs) as well. We observe an additional source of trapping below the $T_c$, which arises from the trapping of free carriers at the ferroelastic twin walls of STO. Application of -ve $V_g$ results in a charge detrapping, which vanishes above $T_c$ also. This feature demonstrates the crucial role of structural domain walls in the electrical transport properties of STO based heterostructures. The number of trapped (detrapped) charges at (from) the twin wall is controlled by the net polarity of the wall and is completely reversible with the sweep of $V_g$.

cond-mat.mes-hall↗

arXiv2021

Spin liquid behavior of a three-dimensional magnetic system Ba$_3$NiIr$_2$O$_9$ with $S$ = 1

The quantum spin liquid (QSL) is an exotic phase of magnetic materials where the spins continue to fluctuate without any symmetry breaking down to zero temperature. Among the handful reports of QSL with spin $S\ge$1, examples with magnetic ions on a three-dimensional magnetic lattice are extremely rare since both larger spin and higher dimension tend to suppress quantum fluctuations. In this work, we offer a new strategy to achieve 3-D QSL with high spin by utilizing two types of transition metal ions, both are magnetically active but located at crystallographically inequivalent positions. We design a 3-D magnetic system Ba$_3$NiIr$_2$O$_9$ consisting of interconnected corner shared NiO$_6$ octahedra and face shared Ir$_2$O$_9$ dimer, both having triangular arrangements in \textit{a-b} plane. X-ray absorption spectroscopy measurements confirm the presence of Ni$^{2+}$ ($S$=1). Our detailed thermodynamic and magnetic measurements reveal that this compound is a realization of gapless QSL state down to at least 100 mK. Ab-initio calculations find a strong magnetic exchange between Ir and Ni sublattices and in-plane antiferromagnetic coupling between the dimers, resulting in dynamically fluctuating magnetic moments on both the Ir and Ni sublattice.

cond-mat.str-el↗

arXiv2020

Oxygen Vacancy-Induced Topological Hall effect in a Nonmagnetic Band Insulator

The discovery of skyrmions has sparked tremendous interests about topologically nontrivial spin textures in recent times. The signature of noncoplanar nature of magnetic moments can be observed as topological Hall effect (THE) in electrical measurement. Realization of such nontrivial spin textures in new materials and through new routes is an ongoing endeavour due to their huge potential for future ultra-dense low-power memory applications. In this work, we report oxygen vacancy (OV) induced THE and anomalous Hall effect (AHE) in a 5$d^0$ system KTaO$_3$. The observation of weak antilocalization behavior and THE in the same temperature range strongly implies the crucial role of spin-orbit coupling (SOC) behind the origin of THE. Ab initio calculations reveal the formation of the magnetic moment on Ta atoms around the OV and Rashba-type spin texturing of conduction electrons. In the presence of Rashba SOC, the local moments around vacancy can form bound magnetic polarons (BMP) with noncollinear spin texture, resulting THE. Scaling analysis between transverse and longitudinal resistance establishes skew scattering driven AHE in present case. Our study opens a route to realize topological phenomena through defect engineering.

cond-mat.mtrl-sci↗

arXiv2020

Oxygen vacancy induced electronic structure modification of KTaO$_3$

The observation of metallic interface between band insulators LaAlO$_3$ and SrTiO$_3$ has led to massive efforts to understand the origin of the phenomenon as well as to search for other systems hosting such two dimensional electron gases (2-DEG). However, the understanding of the origin of the 2-DEG is very often hindered as several possible mechanisms such as polar catastrophe, cationic intermixing and oxygen vacancy (OV) etc. can be operative simultaneously. The presence of a heavy element makes KTaO$_3$ (KTO) based 2-DEG a potential platform to investigate spin orbit coupling driven novel electronic and magnetic phenomena. In this work, we investigate the sole effect of the OV, which makes KTO metallic. Our detailed \textit{ab initio} calculations not only find partially filled conduction bands in the presence of an OV but also predict a highly localized mid-gap state due to the linear clustering of OVs around Ta. Photoluminescence measurements indeed reveal the existence of such mid-gap state and O $K$-edge X-ray absorption spectroscopy finds electron doping in Ta $t_{2g}^*$ antibonding states. This present work suggests that one should be cautious about the possible presence of OVs within KTO substrate in interpreting metallic behavior of KTO based 2-DEG.

cond-mat.mtrl-sci↗

arXiv2019

Epitaxial stabilization of ultra thin films of high entropy perovskite

High entropy oxides (HEOs) are a class of materials, containing equimolar portions of five or more transition metal and/or rare-earth elements. We report here about the layer-by-layer growth of HEO [(La$_{0.2}$Pr$_{0.2}$Nd$_{0.2}$Sm$_{0.2}$Eu$_{0.2}$)NiO$_3$] thin films on NdGaO$_3$ substrates by pulsed laser deposition. The combined characterizations with in-situ reflection high energy electron diffraction, atomic force microscopy, and X-ray diffraction affirm the single crystalline nature of the film with smooth surface morphology. The desired +3 oxidation of Ni has been confirmed by an element sensitive X-ray absorption spectroscopy measurement. Temperature dependent electrical transport measurements revealed a first order metal-insulator transition with the transition temperature very similar to the undoped NdNiO$_3$. Since both of these systems have a comparable tolerance factor, this work demonstrates that the electronic behaviors of $A$-site disordered perovskite-HEOs are primarily controlled by the average tolerance factor.

cond-mat.str-el↗