Shashwat Rathkanthiwar

arXiv2025

On the Origin of Carrier Loss in Mg-Doped N-Polar GaN

The neutral $(V_N-3Mg_{Ga})^0$ complex was found to be the primary compensator in Mg-doped, N-polar GaN. The experimental data showed a sharp drop in hole concentration once [Mg] exceeded ~$10^{19} cm^{-3}$. Temperature-dependent Hall measurements, in conjunction with a charge balance model, revealed that the carrier loss was due to a drastic reduction in acceptor concentration ($N_A$), suggesting that a significant fraction of Mg atoms incorporated in an electrically neutral configuration. A quantitative semi-empirical model based on the grand canonical formalism pointed to the formation of $(V_N-3Mg_{Ga})^0$ complexes as the primary cause for the observed carrier loss.

cond-mat.mtrl-sci↗

arXiv2023

Polarization Independent Grating in GaN-on-Sapphire Photonic Integrated Circuit

In this work, we report the realization of a polarization-insensitive grating coupler, single-mode waveguide, and ring resonator in the GaN-on-Sapphire platform. We provide a detailed demonstration of the material characterization, device simulation, and experimental results. We achieve a grating coupler efficiency of -5.2 dB/coupler with a 1dB and 3dB bandwidth of 40 nm and 80 nm, respectively. We measure a single-mode waveguide loss of -6 dB/cm. The losses measured here are the lowest in a GaN-on-Sapphire photonic circuit. This demonstration provides opportunities for the development of on-chip linear and non-linear optical processes using the GaN-on-Sapphire platform. To the best of our knowledge, this is the first demonstration of an integrated photonic device using a GaN HEMT stack with 2D electron gas.

physics.optics↗