arXiv subjects

Shasika Panamaldeniya

Publications and source records attributed to Shasika Panamaldeniya.

4 recordsLinked to original sources

arXiv2026

Process Development and First Cryogenic Operation of Compact Germanium Ring-Contact HPGe Prototypes

Rare-event experiments such as LEGEND-1000 require high-purity germanium (HPGe) detectors with excellent energy resolution, low electronic noise, and scalable low-background packaging. The germanium ring-contact (GeRC) concept addresses this need through a recessed ring-and-groove electrode geometry intended to preserve point-contact-like low-capacitance signal formation in larger crystals. However, reliable GeRC fabrication has remained unproven because the non-planar groove geometry complicates machining, surface recovery, conformal passivation, and especially the eventual formation of a robust lithium-diffused outer contact. We report the fabrication and first cryogenic operation of two compact n-type GeRC process-validation prototypes produced from in-house HPGe crystals at the University of South Dakota. An optimized workflow was developed for core drilling, groove cutting, non-planar polishing, conformal amorphous-germanium (a-Ge) encapsulation, Al patterning, and GeRC-specific cryogenic mounting. Two independent sputtering systems were used to test whether the thin-film sequence remains operable across substantially different deposition environments. At 77~K, both devices biased stably, showed an inferred depletion onset near 340~V from a pulser-based capacitance proxy consistent with electrostatic modeling, and produced identifiable full-energy peaks from $^{241}\mathrm{Am}$ and $^{137}\mathrm{Cs}$. These results establish a proof-of-principle process and readout baseline for geometry-specific GeRC development. They do not yet constitute a deployment-ready large-mass GeRC technology, but they define the foundation for the next step: integrating conformal lithium-paint deposition and controlled diffusion on the ring-and-groove topology.

physics.ins-det↗

arXiv2026

Internal Charge Amplification in Germanium at 77K and 4K: From Single-Free-Flight Bounds to a Physics-Informed Ionization Model

Internal charge amplification (ICA) in cryogenic high-purity germanium (HPGe) can lower detection thresholds by providing gain inside the detector crystal, but reliable operation requires a predictive estimate of the avalanche-onset \emph{critical electric field} $E_{\mathrm{crit}}$. We present a compact framework for $E_{\mathrm{crit}}$ at 77~K and 4~K (typical HPGe operating temperatures) that bridges (i) a mobility-based single-free-flight (SFF) upper bound with (ii) a physics-informed impact-ionization model incorporating energy-dependent scattering, nonparabolic (Kane) dispersion, intervalley transfer, and the high-energy ``lucky-drift'' tail. This unified treatment yields closed-form, design-useful relations, including $E_{\mathrm{crit}}^{(\mathrm{PI})}=B(T)/\ln[A(T)d]$, and a practical calibration workflow that maps measured low-field mobility $μ(T)$ and gain curves $M(V)$ (Chynoweth analysis) to device-level bias targets with propagated uncertainty bands. Example electron and hole estimates indicate that realistic transport typically lowers $E_{\mathrm{crit}}$ relative to SFF and increases the predicted change in $E_{\mathrm{crit}}$ between 77~K and 4~K. The resulting portable formulas connect materials/transport inputs to geometry, excess noise, and field shaping, providing design-ready guidance for stable, unipolar-favored ICA with controlled quenching in Ge and other cryogenic semiconductors.

physics.ins-det↗

arXiv2026

Depletion-limited Effective Hall mobility in Micrometer-Scale High-Purity Germanium Crystals

Electrostatic effects can strongly constrain charge transport in thinned high-purity germanium (HPGe), with direct implications for radiation detectors and Ge-based electronic and quantum devices. We report a systematic experimental characterization of the thickness-dependent effective Hall mobility in bulk-grown, detector-grade HPGe at room temperature using Hall-effect measurements on n- and p-type samples sequentially thinned from 2.7~mm to 7~\textmu m. The intrinsic bulk carrier mobility remains thickness independent in this regime; the observed reduction in Hall-extracted mobility arises from electrostatic surface depletion that reduces the electrically active conducting thickness. The thickness-dependent data are accurately parameterized by an empirical extended-exponential relation, $μ(t)=μ_{0}[1-\exp(-(t/τ)^β)]$, where $τ$ is a characteristic electrostatic length scale. Comparison with boundary-scattering and depletion-based models shows that Fuchs--Sondheimer scattering is negligible, while electrostatic depletion dominates the transport behavior. The hierarchy $λ_{D}<τ\lesssim W_{0}$ directly links the apparent mobility reduction to long-range screening and near-surface electric fields. These results yield a simple design guideline: maintaining thicknesses $t\gtrsim 3τ$ preserves near-bulk transport, whereas thinner structures operate in a depletion-controlled regime with strongly reduced effective conductivity.

physics.app-ph↗

arXiv2026

Hybrid-Contact Planar HPGe Process Vehicle Toward Ring-Contact Designs

Rare-event searches including dark matter, coherent elastic neutrino--nucleus scattering (CE$ν$NS), and neutrinoless double-beta decay (0$νββ$) require high-purity germanium (HPGe) detectors with ultralow noise, stable backgrounds, and electrode geometries that can scale to larger single-crystal masses. Ring-contact (ring-and-groove) designs address scalability by shaping the electric field to preserve low-capacitance readout, but their nonplanar topology motivates a lithium-contact process that is compatible with conformal deposition and robust high-voltage operation. As a process demonstration toward future ring-contact prototypes, we fabricate and characterize a hybrid-contact planar HPGe device, KL01. Here, ``hybrid'' denotes an $n^{+}$ contact formed by an in-house lithium-suspension paint followed by controlled thermal diffusion, combined with an AJA-developed a-Ge/Al $p^{+}$ contact and a-Ge sidewall passivation. At 77~K the device exhibits pA-scale leakage current under kV bias, a depletion plateau near $V_{\mathrm{dep}}\approx 1300$~V, and energy resolutions of 1.57~keV FWHM at 59.5~keV and 2.57~keV FWHM at 662~keV. These results validate the compatibility of the paint-and-diffuse lithium process with thin-film a-Ge/Al contacts and establish a practical fabrication workflow to be extended to ring-and-groove electrodes for next-generation rare-event HPGe modules.

physics.ins-det↗