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Shelby Fields

Publications and source records attributed to Shelby Fields.

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Giant spontaneous Kerr effect and its self-doping dependence in altermagnetic MnTe

Altermagnetism, a third class of collinear magnetism with spin-split bands and vanishing net magnetization, has emerged in hexagonal {\alpha}-MnTe, a promising platform for ultrafast, stray-field-free spintronics. Whether MnTe's macroscopic symmetry-breaking signatures reflect ideal altermagnetic order or are activated by defects remains open. Here we report giant spontaneous Kerr rotations of up to 1500 rad in {\alpha}-MnTe single crystals at the telecommunication wavelength of 1550 nm, onsetting precisely at the N\'eel temperature TN = 307 K. The signal appears in disjoint macroscopic patches whose amplitude tracks the sample conductivity, and a hole-conducting {\alpha}-MnTe film reproduces this response together with an anomalous Hall effect. Within a single crystal, Kerr-active regions are optically distinct from their Kerr-silent surroundings in co-registered reflection maps. These observations indicate that carrier self-doping, rather than ideal altermagnetic order alone, governs the giant magneto-optical response, and establish telecom-wavelength Kerr imaging as a practical readout for altermagnetic spintronics.

cond-mat.str-el

Interface, bulk and surface structure of heteroepitaxial altermagnetic {\alpha}-MnTe films grown on GaAs(111)

Epitaxial MnTe films have recently seen a spur of research into their altermagnetic semiconducting properties. However, those properties may be extremely sensitive to structural and chemical modifications. We report a detailed investigation of the synthesis of the altermagnet {\alpha}-MnTe on GaAs(111) which reveals the bulk defect structure of this material, the mechanism by which it releases strain from the underlying substrate and the impact of oxidation on its surface. X-ray diffraction measurements show that {\alpha}-MnTe layers with thicknesses spanning 45nm to 640nm acquire lattice parameters different from bulk mostly due to thermal strain caused by the substrate rather than strain from the lattice mismatch. Through high resolution transmission electron microscopy (TEM) measurement, we then unveil a misfit dislocation array at the interface, revealing the mechanism by which lattice strain is relaxed. TEM also reveals a stacking fault in the bulk, occurring along a glide plane parallel to the interface. The combination of TEM with polarized neutron reflectometry measurements finally reveals the impact of oxidation on the chemistry of the surface of uncapped MnTe. Our findings highlight the subtle role of epitaxy in altering the structure of {\alpha}-MnTe providing potential opportunities to tune the altermagnetic properties of this material.

cond-mat.mtrl-sci