arXiv subjects

Shen J. Dillon

Publications and source records attributed to Shen J. Dillon.

4 recordsLinked to original sources

arXiv2026

Grain-Size Dependence of Thermal and Electrical Properties in (Cr,Mo,Ta,V,W)C1-δ High-Entropy Carbide Ceramics

Thermal and electrical transport in high-entropy carbides can be influenced by grain-boundary scattering, but the relevant microstructural regime remains uncertain. Here, near-fully dense $(Cr,Mo,Ta,V,W)C_{1-δ}$ ceramics were densified by spark plasma sintering at 1750-1950 °C, producing average grain sizes from 9.3 $\pm$ 4.9 to 28.8 $\pm$ 15.3 $μ$m while retaining the rock-salt phase. Heat capacities were measured experimentally and estimated by the Neumann-Kopp law with the latter used to calculate thermal conductivity. Thermal conductivity values were in the range of 6.8-7.1 W $m^{-1}$ $K^{-1}$ at room temperature, but showed no systematic dependence on grain size within the investigated range. Room-temperature electrical resistivity values were in the range of 151.9 to 177.0 $μΩ$ cm and likewise showed no grain-size dependence. The electron contribution to room-temperature thermal conductivity was estimated to be approximately 58-68% of total thermal conductivity as estimated using the Wiedemann-Franz law and the theoretical Lorenz number. The results indicated that processing-induced grain coarsening did not produce clearly resolvable transport-property changes under the conditions investigated leading to the conclusion that intrinsic disorder and defect chemistry may exert stronger influences on properties.

cond-mat.mtrl-sci↗

arXiv2026

The Case Against Hall-Petch Hardening in High Entropy Carbide Ceramics

Grain size is often used with the Hall-Petch relationship to justify differences in hardness in ceramic materials. Herein, hardness does not vary systematically with grain-size for fully dense, single-phase (Cr,Mo,Ta,V,W)C1-δ high entropy carbide ceramics for grain sizes that varied by a factor of three. Fully dense, single-phase ceramics with grain sizes from 9.3+/-0.3 to 28.8+/-0.7 microns exhibited a pronounced indentation size effect, with Vickers hardness decreasing from ~28-30 GPa at 0.49 N to ~20-21 GPa at 9.81 N, and Berkovich nanohardness ranging from 26 to 30 GPa at 10 mN. However, at a given load, hardness remained within a narrow range across the grain-size series, and no consistent Hall-Petch dependence was resolved. The lack of grain-size dependence likely indicates that the deformation volume sampled by the indenter was not controlled by grain-boundary interactions; instead, hardness was governed primarily by indentation load and local response of the rock salt carbide matrix.

cond-mat.mtrl-sci↗

arXiv2026

Grain Growth Kinetics in (Cr,Mo,Ta,V,W)C1-δ High-Entropy Carbide Ceramics

Understanding grain-boundary mobility during spark plasma sintering can enable microstructure control in high-entropy carbides, yet quantitative grain-growth kinetics remain scarce. In this work, grain growth kinetics and densification behavior were investigated for single-phase fully dense (Cr,Mo,Ta,V,W)C1-δ high-entropy carbide ceramics. Specimens were densified by spark plasma sintering for a constant dwell time of 10 min at temperatures between 1750 °C and 1950 °C to isolate the role of temperature on microstructural evolution. Increasing sintering temperature produced grain growth and increased lattice parameter, while maintaining a single-phase rock salt structure. Elemental mapping showed a progressive reduction of Ta segregation with increasing sintering temperature, suggesting enhanced chemical homogenization at elevated temperatures. Grain growth kinetics were analyzed using a normal grain growth model with an assumed growth exponent of n=3, physically reasonable for grain-boundary-controlled growth influenced by solute and vacancy pinning. Arrhenius analysis of the growth factor yielded an apparent activation energy of approximately 620 kJ mol-1, comparable to diffusion-controlled processes in refractory transition-metal carbides. Densification curves revealed rapid consolidation prior to reaching the peak temperature followed by temperature-dominated grain coarsening. These results establish quantitative relationships between densification temperature, grain growth, and diffusion kinetics in a carbide system, providing insight into the microstructural stability of high-entropy, ultra-high-temperature carbide ceramics.

cond-mat.mtrl-sci↗

arXiv2026

Ductility and Brittle Fracture of Tungsten by Disconnection Pile-up on Twin Boundaries

Refractory body-centered cubic (BCC) metals and alloys are of extraordinary importance in modern technological and structural applications. However, their wider adoption in science and technology is severely restricted by low-temperature brittleness, quantified by an unacceptably high value of the brittle-to ductile transition temperature (DBTT). The DBTT of these alloys is known to depend strongly on the particular microstructure of the material following mechanisms that are not well understood. Here we apply cross-scale molecular dynamics (MD), a simulation approach that preserves full atomic resolution while capturing the collective evolution of dislocations, twins, and cracks in near-micron-scale volumes, to investigate ductility and fracture in single-crystal tungsten pillars as a function of initial defect microstructure, deformation conditions, and temperature. The simulations reveal a sequence of microscopic processes conducive to failure: dislocation starvation, nucleation and growth of twins, pinning of the twin boundaries at surface asperities, resulting in disconnection pile-ups that trigger crack nucleation and propagation at low macroscopic stresses along incoherent boundary segments. By resolving these processes within a single atomistic framework, our simulations connect defect-level dynamics to macroscopic fracture behavior and identify microstructural pathways capable of shifting the DBTT through targeted promotion or suppression of the underlying deformation mechanisms.

cond-mat.mtrl-sci↗