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Sheng Meng

Publications and source records attributed to Sheng Meng.

At least 91 records · Page 5Linked to original sources

Pseudospin-selective Floquet band engineering in black phosphorus

Time-periodic light field has emerged as a control knob for manipulating quantum states in solid-state materials, cold atoms and photonic systems via hybridization with photon-dressed Floquet states in the strong coupling limit, dubbed as Floquet engineering. Such interaction leads to tailored properties of quantum materials, for example, modifications of the topological properties of Dirac materials and modulation of the optical response. Despite extensive research interests over the past decade, there is no experimental evidence of momentum-resolved Floquet band engineering of semiconductors, which is a crucial step to extend Floquet engineering to a wide range of solid-state materials. Here, based on time- and angle-resolved photoemission spectroscopy measurements, we report experimental signatures of Floquet band engineering in a model semiconductor - black phosphorus. Upon near-resonance pumping at photon energy of 340 to 440 meV, a strong band renormalization is observed near the band edges. In particular, light-induced dynamical gap opening is resolved at the resonance points, which emerges simultaneously with the Floquet sidebands. Moreover, the band renormalization shows a strong selection rule favoring pump polarization along the armchair direction, suggesting pseudospin selectivity for the Floquet band engineering as enforced by the lattice symmetry. Our work demonstrates pseudospin-selective Floquet band engineering in black phosphorus, and provides important guiding principles for Floquet engineering of semiconductors.

cond-mat.mtrl-sci↗

Observation of Gapped Dirac Cones in a Two-Dimensional Su-Schrieffer-Heeger Lattice

The Su-Schrieffer-Heeger (SSH) model in a two-dimensional rectangular lattice features gapless or gapped Dirac cones with topological edge states along specific peripheries. While such a simple model has been recently realized in photonic/acoustic lattices and electric circuits, its material realization in condensed matter systems is still lacking. Here, we study the atomic and electronic structure of a rectangular Si lattice on Ag(001) by angle-resolved photoemission spectroscopy and theoretical calculations. We demonstrate that the Si lattice hosts gapped Dirac cones at the Brillouin zone corners. Our tight-binding analysis reveals that the Dirac bands can be described by a 2D SSH model with anisotropic polarizations. The gap of the Dirac cone is driven by alternative hopping amplitudes in one direction and staggered potential energies in the other one and hosts topological edge states. Our results establish an ideal platform to explore the rich physical properties of the 2D SSH model.

cond-mat.mtrl-sci↗

Moishezon manifolds with no nef and big classes

We show that a compact complex manifold $X$ has no non-trivial nef $(1,1)$-classes if there is a non-isomorphic bimeromorphic map $f\colon X\dashrightarrow Y$ isomorphic in codimension $1$ to a compact Kähler manifold $Y$ with $h^{1,1}=1$. In particular, there exist infinitely many isomorphic classes of smooth compact Moishezon threefolds with no nef and big $(1,1)$-classes. This contradicts a recent paper (Strongly Jordan property and free actions of non-abelian free groups, Proc. Edinb. Math. Soc., (2022): 1--11).

math.AG↗

Ultrafast shift current dynamics in WS$_{2}$ monolayer

The shift current effect, in materials lacking inversion symmetry, may potentially allow the performance of photovoltaics to surpass the Shockley-Queisser limit for traditional p-n junction-based photovoltaics. Although the shift-current effect has been studied from first-principles via second-order perturbation theory, an understanding of the dynamics of hot carriers is still lacking. We investigate the dynamics of the shift current in monolayer WS$_{2}$ via real-time propagation time-dependent density functional theory (rt-TDDFT). We find that the shift current can be generated within 10 - 20 fs after turning on the lights and dissipates within approximately a few tens of femtoseconds after turning off the lights. This property can be used for ultrafast photon detection. This work provides an important step toward understanding the dynamics of shift-current effects, which is crucial for device applications.

cond-mat.mtrl-sci↗

Observation of topological flat bands in the kagome semiconductor Nb$_3$Cl$_8$

The destructive interference of wavefunctions in a kagome lattice can give rise to topological flat bands (TFBs) with a highly degenerate state of electrons. Recently, TFBs have been observed in several kagome metals, including Fe$_3$Sn$_2$, FeSn, CoSn, and YMn$_6$Sn$_6$. Nonetheless, kagome materials that are both exfoliable and semiconducting are lacking, which seriously hinders their device applications. Herein, we show that Nb$_3$Cl$_8$, which hosts a breathing kagome lattice, is gapped out because of the absence of inversion symmetry, while the TFBs survive because of the protection of the mirror reflection symmetry. By angle-resolved photoemission spectroscopy measurements and first-principles calculations, we directly observe the TFB and a moderate band gap in Nb$_3$Cl$_8$. By mechanical exfoliation, we successfully obtain monolayers of Nb$_3$Cl$_8$ and confirm that they are stable under ambient conditions. In addition, our calculations show that monolayers of Nb$_3$Cl$_8$ have a magnetic ground state, thus providing opportunities to study the interplay between geometry, topology, and magnetism.

cond-mat.mtrl-sci↗

Orbital hybridization and electrostatic interaction in a double molecule transistor

Understanding the intermolecular interactions and utilize these interactions to effectively control the transport behavior of single molecule is the key step from single molecule device to molecular circuits1-6. Although many single molecule detection techniques are used to detect the molecular interaction at single-molecule level1,4,5,7,8, probing and tuning the intermolecular interaction all by electrical approaches has not been demonstrated. In this work, we successful assemble a double molecule transistor incorporating two manganese phthalocyanine molecules, on which we probe and tune the interaction in situ by implementing electrical manipulation on molecular orbitals using gate voltage. Orbital levels of the two molecules couple to each other and couple to the universal gate differently. Electrostatic interaction is observed when single electron changing in one molecule alters the transport behavior of the other, providing the information about the dynamic process of electron sequent tunneling through a molecule. Orbital hybridization is found when two orbital levels are put into degeneracy under non-equilibrium condition, making the tunneling electrons no longer localized to a specific molecule but shared by two molecules, offering a new mechanism to control charge transfer between non-covalent molecules. Current work offer a forelook into working principles of functional electrical unit based on single molecules.

cond-mat.mes-hall↗

Observation of one-dimensional Dirac fermions in silicon nanoribbons

Dirac materials, which feature Dirac cones in the reciprocal space, have been one of the hottest topics in condensed matter physics in the past decade. To date, 2D and 3D Dirac Fermions have been extensively studied, while their 1D counterparts are rare. Recently, Si nanoribbons (SiNRs), which are composed of alternating pentagonal Si rings, have attracted intensive attention. However, the electronic structure and topological properties of SiNRs are still elusive. Here, by angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy measurements, first-principles calculations, and tight-binding model analysis, we demonstrate the existence of 1D Dirac Fermions in SiNRs. Our theoretical analysis shows that the Dirac cones derive from the armchairlike Si chain in the center of the nanoribbon and can be described by the Su-Schrieffer-Heeger model. These results establish SiNRs as a platform for studying the novel physical properties in 1D Dirac materials.

cond-mat.mtrl-sci↗

Traversing double-well potential energy surfaces: photoinduced concurrent intralayer and interlayer structural transitions in XTe2 (X=Mo, W)

Manipulating crystal structure and the corresponding electronic properties in quantum materials provides opportunities for the exploration of exotic physics and practical applications. Here, by ultrafast electron diffraction, structure factor calculation and TDDFT-MD simulations, we report the photoinduced concurrent intralayer and interlayer structural transitions in the Td and 1T' phase of XTe2 (X=Mo, W). Concomitant with the interlayer structural transition by shear displacement, the ultrafast suppression of the intralayer Peierls distortion within 0.3 ps is demonstrated and attributed to Mo-Mo (W-W) bond stretching. We discuss the modification of multiple quantum electronic states associated with the intralayer and interlayer structural transitions, such as the topological band inversion and the higher-order topological state. The twin structure and the stacking fault in XTe2 are identified by the ultrafast structural response. Our work elucidates the pathway of the photoinduced intralayer and interlayer structural transitions in atomic and femtosecond spatiotemporal scale. Moreover, the concurrent intralayer and interlayer structural transitions reveals the traversal of all double-well potential energy surfaces (DWPES) by laser excitation in material system, which may be an intrinsic mechanism in the field of photoexcitation-driven symmetry engineering, beyond the single DWPES transition model and the order-disorder transition model.

cond-mat.mtrl-sci↗

Superconductive materials with MgB2-like structures from data-driven screening

Finding viable superconducting materials is of interest to the physics community as the superconductors are the playground to manifest many appealing quantum phenomena. This work exemplifies an end-to-end materials discovery towards novel MgB2-like superconductors, starting from the data-driven compound screening all the way to the experimental materialization. In addition to the known superconducting compounds, CaB2 (Tc = 9.4 ~ 28.6 K), SrGa2 (Tc = 0.1 ~ 2.4 K), BaGa2 (Tc = 0.3 ~ 3.3 K), BaAu2 (Tc = 0.0 ~ 0.5 K), and LaCu2 (Tc = 0.1 ~ 2.2 K) are newly discovered, out of ~182,000 starting structures, to be the most promising superconducting compounds that share similar atomic structures with MgB2. Moreover, BaGa2 is experimentally synthesized and measured to confirm that the compound is a BCS superconductor with Tc = 0.36 K, in good agreement with our theoretical predictions. This work provides a "once and for all" study for the MgB2-like superconductors and showcases that it is feasible to discover new materials via a data-driven approach.

cond-mat.supr-con↗

Screening promising CsV3Sb5-like kagome materials from systematic first-principles evaluation

CsV3Sb5 kagome lattice holds the promise for manifesting electron correlation, topology and superconducting. However, by far only three CsV3Sb5-like kagome materials have been experimentally spotted. In this work, we enlarge this family of materials to 1386 compounds via element species substitution, and the further screening process suggests that 28 promising candidates have superior thermodynamic stability, hence they are highly likely to be synthesized. Moreover, these compounds possess several identical electronic structures, and can be categorized into five non-magnetic and three magnetic groups accordingly. It is our hope that this work can greatly expand the viable phase space of the CsV3Sb5-like materials for investigating or tuning the novel quantum phenomena in kagome lattice.

cond-mat.mtrl-sci↗

Engineering Interlayer Hybridization in Energy Space via Dipolar Overlayers

The interlayer hybridization (IH) of van der Waals (vdW) materials is thought to be mostly associated with the unignorable interlayer overlaps of wavefunctions ($t$) in real space. Here, we develop a more fundamental understanding of IH by introducing a new physical quantity, the IH admixture ratio $α$. Consequently, an exotic strategy of IH engineering in energy space can be proposed, i.e., instead of changing t as commonly used, $α$ can be effectively tuned in energy space by changing the onsite energy difference ($2Δ$) between neighboring-layer states. In practice, this is feasible via reshaping the electrostatic potential of the surface by deposing a dipolar overlayer, e.g., crystalline ice. Our first-principles calculations unveil that IH engineering via adjusting $2Δ$ can greatly tune interlayer optical transitions in transition-metal dichalcogenide bilayers, switch different types of Dirac surface states in Bi$_2$Se$_3$ thin films, and control magnetic phase transition of charge density waves in 1H/1T-TaS$_2$ bilayers, opening new opportunities to govern the fundamental optoelectronic, topological, and magnetic properties of vdW systems beyond the traditional interlayer-distance or twisting engineering.

cond-mat.mtrl-sci↗

Orbital Design of Flat Bands in Non-Line-Graph Lattices via Line-Graph Wavefunctions

Line-graph (LG) lattices are known for having flat bands (FBs) from the destructive interference of Bloch wavefunctions encoded in pure lattice symmetry. Here, we develop a generic atomic/molecular orbital design principle for FBs in non-LG lattices. Based on linear-combination-of-atomic-orbital (LCAO) theory, we demonstrate that the underlying wavefunction symmetry of FBs in a LG lattice can be transformed into the atomic/molecular orbital symmetry in a non-LG lattice. We illustrate such orbital-designed topological FBs in three 2D non-LG, square, trigonal, and hexagonal lattices, where the designed orbitals faithfully reproduce the corresponding lattice symmetries of checkerboard, Kagome, and diatomic-Kagome lattices, respectively. Interestingly, systematic design of FBs with a high Chern number is also achieved based on the same principle. Fundamentally our theory enriches the FB physics; practically it significantly expands the scope of FB materials, since most materials have multiple atomic/molecular orbitals at each lattice site, rather than a single s orbital mandated in graph theory and generic lattice models.

cond-mat.mtrl-sci↗

Equivariant Kähler model for Fujiki's class

Let $X$ be a compact complex manifold in Fujiki's class $\mathcal{C}$, i.e., admitting a big $(1,1)$-class $[α]$. Consider $\text{Aut}(X)$ the group of biholomorphic automorphisms and $\text{Aut}_{[α]}(X)$ the subgroup of automorphisms preserving the class $[α]$ via pullback. We show that $X$ admits an $\text{Aut}_{[α]}(X)$-equivariant Kähler model: there is a bimeromorphic holomorphic map $σ\colon \widetilde{X}\to X$ from a Kähler manifold $\widetilde{X}$ such that $\text{Aut}_{[α]}(X)$ lifts holomorphically via $σ$. There are several applications. We show that $\text{Aut}_{[α]}(X)$ is a Lie group with only finitely many components. This generalizes an early result of Lieberman and Fujiki on the Kähler case. We also show that every torsion subgroup of $\text{Aut}(X)$ is almost abelian, and $\text{Aut}(X)$ is finite if it is a torsion group.

math.AG↗

Non-isomorphic endomorphisms of Fano threefolds

Let $X$ be a smooth Fano threefold. We show that $X$ admits a non-isomorphic surjective endomorphism if and only if $X$ is either a toric variety or a product of $\mathbb{P}^1$ and a del Pezzo surface; in this case, $X$ is a rational variety. We further show that $X$ admits a polarized (or amplified) endomorphism if and only if $X$ is a toric variety.

math.AG↗

Spatially indirect intervalley excitons in bilayer WSe2

Spatially indirect excitons with displaced wavefunctions of electrons and holes play a pivotal role in a large portfolio of fascinating physical phenomena and emerging optoelectronic applications, such as valleytronics, exciton spin Hall effect, excitonic integrated circuit and high-temperature superfluidity. Here, we uncover three types of spatially indirect excitons (including their phonon replicas) and their quantum-confined Stark effects in hexagonal boron nitride encapsulated bilayer WSe2, by performing electric field-tunable photoluminescence measurements. Because of different out-of-plane electric dipole moments, the energy order between the three types of spatially indirect excitons can be switched by a vertical electric field. Remarkably, we demonstrate, assisted by first-principles calculations, that the observed spatially indirect excitons in bilayer WSe2 are also momentum-indirect, involving electrons and holes from Q and K/Γ valleys in the Brillouin zone, respectively. This is in contrast to the previously reported spatially indirect excitons with electrons and holes localized in the same valley. Furthermore, we find that the spatially indirect intervalley excitons in bilayer WSe2 can exhibit considerable, doping-sensitive circular polarization. The spatially indirect excitons with momentum-dark nature and highly tunable circular polarization open new avenues for exotic valley physics and technological innovations in photonics and optoelectronics.

cond-mat.mes-hall↗

A universal model for the formation energy prediction of inorganic compounds

Harnessing the recent advance in data science and materials science, it is feasible today to build predictive models for materials properties. In this study, we employ the data of high-throughput quantum mechanics calculations based on 170,714 inorganic crystalline compounds to train a machine learning model for formation energy prediction. Different from the previous work, our model reaches a fairly good predictive ability (R2=0.982 and MAE=0.07 eVatom-1, DenseNet model) and meanwhile can be universally applied to the large phase space of inorganic materials. The improvement comes from several effective structure-dependent descriptors that are proposed to take the information of electronegativity and structure into account. This model can provide a useful tool to search for new materials in a vast phase space in a fast and cost-effective manner.

cond-mat.mtrl-sci↗

Screening 2D materials with topological flat bands

Topological flat band (TFB) has been proposed theoretically in various lattice models, to exhibit a rich spectrum of intriguing physical behaviors. However, the experimental demonstration of flat band (FB) properties has been severely hindered by the lack of materials realization. Here, by screening materials from a first-principles materials database, we identify a group of 2D materials with TFBs near the Fermi level, covering some simple line-graph and generalized line-graph FB lattice models. These include the Kagome sublattice of O in TiO2 yielding a spin-unpolarized TFB, and that of V in ferromagnetic V3F8 yielding a spin-polarized TFB. Monolayer Nb3TeCl7 and its counterparts from element substitution are found to be breathing-Kagome-lattice crystals. The family of monolayer III2VI3 compounds exhibit a TFB representing the coloring-triangle lattice model. ReF3, MnF3 and MnBr3 are all predicted to be diatomic-Kagome-lattice crystals, with TFB transitions induced by atomic substitution. Finally, HgF2, CdF2 and ZnF2 are discovered to host dual TFBs in the diamond-octagon lattice. Our findings pave the way to further experimental exploration of eluding FB materials and properties.

cond-mat.mtrl-sci↗

Manipulating Hubbard-type Coulomb blockade effect of metallic wires embedded in an insulator

Correlated states emerge in low-dimensional systems owing to enhanced Coulomb interactions. Elucidating these states requires atomic scale characterization and delicate control capabilities. In this study, spectroscopic imaging-scanning tunneling microscopy was employed to investigate the correlated states residing in the one-dimensional electrons of the monolayer and bilayer MoSe2 mirror twin boundary (MTB). The Coulomb energies, determined by the wire length, drive the MTB into two types of ground states with distinct respective out-of-phase and in-phase charge orders. The two ground states can be reversibly converted through a metastable zero-energy state with in situ voltage pulses, which tunes the electron filling of the MTB via a polaronic process, as substantiated by first-principles calculations. Our modified Hubbard model reveals the ground states as correlated insulators from an on-site U-originated Coulomb interaction, dubbed Hubbard-type Coulomb blockade effect. Our work sets a foundation for understanding correlated physics in complex systems and for tailoring quantum states for nano-electronics applications.

cond-mat.mes-hall↗