arXiv subjects

Sheng-Hsiung Hung

Publications and source records attributed to Sheng-Hsiung Hung.

3 recordsLinked to original sources

arXiv2025

Optical switching of ferro-rotational charge-density wave states

Tailored optical excitations can steer a system along non-equilibrium pathways to metastable states with specific structural or electronic properties. The light-induced hidden state of 1T-TaS$_{2}$, with its strongly enhanced conductivity and exceptionally long lifetime, represents a unique model system for studying the ultrafast switching of correlated electronic states. We use surface-sensitive electron diffraction in combination with a femtosecond optical quench to reveal the coexistence of both charge-density-wave (CDW) 2D chiralities as a structural characteristic of the hidden state, corresponding to coexisting ferro-rotational CDW states. Density functional theory (DFT) simulations of interfaces between opposite CDW 2D chiralities predict a higher-level, fractal-type moir'{e} superstructure with a kagome band structure near the Fermi energy. More broadly, these findings suggest that heterochiral interfaces in CDW systems provide an additional structural degree of freedom, expanding the possibilities for electronic control via twist-angle engineering.

cond-mat.mes-hall↗

arXiv2024

Revealing the Charge Density Wave Proximity Effect in Graphene on 1T-TaS$_2$

The proximity-effect, whereby materials in contact appropriate each others electronic-properties, is widely used to induce correlated states, such as superconductivity or magnetism, at heterostructure interfaces. Thus far however, demonstrating the existence of proximity-induced charge-density-waves (PI-CDW) proved challenging. This is due to competing effects, such as screening or co-tunneling into the parent material, that obscured its presence. Here we report the observation of a PI-CDW in a graphene layer contacted by a 1T-TaS2 substrate. Using scanning tunneling microscopy (STM) and spectroscopy (STS) together with theoretical-modeling, we show that the coexistence of a CDW with a Mott gap in 1T-TaS2 coupled with the Dirac-dispersion of electrons in graphene, makes it possible to unambiguously demonstrate the PI-CDW by ruling out alternative interpretations. Furthermore, we find that the PI-CDW is accompanied by a reduction of the Mott gap in 1T-TaS2 and show that the mechanism underlying the PI-CDW is well-described by short-range exchange-interactions that are distinctly different from previously observed proximity effects.

cond-mat.mes-hall↗

arXiv2022

Revealing the Charge Density Wave Proximity Effect in Graphene on 1T-TaS2

Proximity effect is a very powerful approach and has been widely applied to induce electron correlations such as: superconductivity, magnetism and spin-orbit effects at the interface of heterostructure quantum materials. However, proximity induced charge density wave (CDW) state has remained elusive. We report the first observation of a novel proximity induced CDW within a graphene layer that is deposited on 1T-TaS2 crystal. By using scanning tunneling microscopy and spectroscopy to probe the interface of the graphene/1T-TaS2 heterostructure together with theoretical modeling, we show that the interactions between the Dirac-like carriers in graphene and the correlated electrons in 1T-TaS2 induce a periodic charge density modulation within graphene and modify the band structure at the surface of 1T-TaS2, resulting in a 7.5% reduction of its gap size. Our results provide a new platform to manipulate the electron charge correlations in heterostructures.

cond-mat.mes-hall↗