arXiv subjects

Shengchun Shen

Publications and source records attributed to Shengchun Shen.

13 recordsLinked to original sources

arXiv2026

Symmetry-engineered and electrically tunable in-plane anomalous Hall effect in oxide heterostructures

The family of Hall effects has long served as a premier probe of how symmetry, magnetic order, and topology intertwine in solids. Recently, the in-plane anomalous Hall effect (IP-AHE), a transverse Hall response driven by in-plane magnetization, has emerged as a distinct member of this family, offering innovative spintronic functionalities and illuminating intricate interplay between mirror-symmetry breaking and in-plane magnetic order. However, practical routes to deterministically and reversibly control IP-AHE remain limited. Here, we establish a symmetry-engineered IP-AHE platform, CaRuO3/La2/3Ca1/3MnO3/CaRuO3 heterostructure on NdGaO3(110), that turns strict mirror-symmetry breaking constraints into effective tuning knobs. IP-AHE in these epitaxial trilayers unambiguously couples to the CaRuO3-buffer-induced mirror-symmetry breaking and faithfully reproduces the ferromagnetic hysteresis. Ionic liquid gating further enables reversible reconfigurations of the symmetry breaking, thereby achieving electrical modulation and ON/OFF switching of IP-AHE. This highly tunable IP-AHE platform opens pathways for exploring nontrivial magnetic order and developing programmable Hall functionalities in planar geometries.

cond-mat.str-el↗

arXiv2025

Magnetic-field controlled organic spintronic memristor for neural network computation

Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic computing systems inspired by the human brain. In this study, we present a novel organic spintronic memristor based on a La0.67Sr0.33MnO3 (LSMO)/poly(vinylidene fluoride) (PVDF)/Co heterostructure, exhibiting biologically inspired synaptic behavior. Driven by fluorine atom migration within the PVDF layer, the device demonstrates both long-term depression (LTD) and long-term potentiation (LTP) under controlled electrical polarization. Distinctively, the resistance states can also be modulated by an external magnetic field via the tunneling magnetoresistance (TMR) effect, introducing a non-electrical means of tuning synaptic plasticity. This magnetic control mechanism enables multi-state modulation without compromising device performance or endurance. Furthermore, convolutional neural network (CNN) simulations incorporating this magnetic tuning capability reveal enhanced pattern recognition accuracy and improved training stability, especially at high learning rates. These findings underscore the potential of organic spintronic memristors as high-performance, low-power neuromorphic elements, particularly suited for applications in flexible and wearable electronics.

cond-mat.mes-hall↗

arXiv2023

Robust room temperature ferromagnetism in an itinerant van der Waals antiferromagnet

The coexistence of antiferromagnetic and ferromagnetic order at room temperature in single-phase van der Waals materials, particularly within the two-dimensional limit, has attracted significant research interest. Nonetheless, such materials are rare. In this work, we introduce an itinerant van der Waals antiferromagnet (Fe0.56Co0.44)5GeTe2, where the ferromagnetic order of its exfoliated flakes remains discernible up to room temperature, extending down to the monolayer limit. A notable phenomenon observed is the evident odd-even layer-number effect at high temperature (e.g., T = 150 K). Such behaviour can be expounded by a linear-chain model. Of particular interest is the robust ferromagnetic order observed in even-layer flakes at low temperature (e.g., T = 2 K), which could potentially be attributed to spin-polarized defects. The intricate interplay among magnetic field strength, layer number, and temperature gives rise to a diverse array of phenomena, holding promise not only for new physics but also for practical applications.

cond-mat.str-el↗

arXiv2023

Emergent zero-field anomalous Hall effect in a reconstructedrutileantiferromagnetic metal

Anomalous Hall effect (AHE) emerged in antiferromagnetic metals shows intriguing physics and application potential. In contrast to certain noncollinear antiferromagnets, rutile RuO$_2$ has been proposed recently to exhibit a crystal-assisted AHE with collinear antiferromagnetism. However, in RuO$_2$, the on-site magnetic moment accompanying itinerant 4d electrons is quite small, and more importantly, the AHE at zero external field is prohibited by symmetry because of the high-symmetry [001] direction of the Néel vector. Here, we show the AHE at zero field in the collinear antiferromagnet, Cr-doped RuO$_2$. The appropriate doping of Cr at Ru sites results in a rotation of the Néel vector from [001] to [110] and enhancement of the on-site magnetic moment by one order of magnitude while maintaining a metallic state with the collinear antiferromagnetism. The AHE with vanishing net moment in the Ru$_{0.8}$Cr$_{0.2}$O$_2$ exhibits an orientation dependence consistent with the [110]-oriented Néel vector. These results open a new avenue to manipulate AHE in antiferromagnetic metals.

cond-mat.mtrl-sci↗

arXiv2022

Stability of Superconducting Nd0.8Sr0.2NiO2 Thin Films

The discovery of superconducting states in the nickelate thin film with infinite-layer structure has paved a new way for studying unconventional superconductivity. So far, research in this field is still very limited due to difficulties in sample preparation. Here we report on the successful preparation of superconducting Nd0.8Sr0.2NiO2 thin film (Tc = 8.0 - 11.1 K) and study the stability of such films in ambient environment, water and under electrochemical conditions. Our work demonstrates that the superconducting state of Nd0.8Sr0.2NiO2 is remarkably stable, which can last for at least 47 days continuous exposure to air at 20 degree Celsius and 35% relative humidity. Further we show the superconductivity disappears after being immersed in de-ionized water at room temperature for 5 hours. Surprisingly, it can also survive under ionic liquid gating conditions with applied voltage up to 4 V, which is even more stable than conventional perovskite complex oxides.

cond-mat.supr-con↗

arXiv2021

Manipulate the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron-Filling

Spin-orbit-coupled Mott iridates show great similarity with parent compounds of superconducting cuprates, attracting extensive research interests especially for their electron-doped states. However, previous experiments are largely limited within a small doping range due to the absence of effective dopants, and therefore the electron-doped phase diagram remains elusive. Here we utilize an ionic-liquid-gating induced protonation method to achieve electron-doping into a 5d Mott-insulator built with SrIrO3/SrTiO3 superlattice, and achieve a systematic mapping of its electron-doped phase diagram with the evolution of the iridium valence state from 4+ to 3+, equivalent to doping of one electron per iridium ion. Along increasing doping level, the parent Mott-insulator is first turned into a localized metallic state with gradually suppressed magnetic ordering, and then further evolved into a nonmagnetic band insulating state. This work forms an important step forward for the study of electron-doped Mott iridate systems, and the strategy of manipulating the band filling in an artificially designed superlattice structure can be readily extended into other systems with more exotic states to explore.

cond-mat.str-el↗

arXiv2021

Emergent ferromagnetism with Fermi-liquid behavior in proton intercalated CaRuO3

The evolution between Fermi liquid and non-Fermi-liquid states in correlated electron systems has been a central subject in condensed matter physics because of the coupled intriguing magnetic and electronic states. An effective pathway to explore the nature of non-Fermi liquid behavior is to approach its phase boundary. Here we report a crossover from non-Fermi liquid to Fermi-liquid state in metallic CaRuO3 through ionic liquid gating induced protonation with electric field. This electronic transition subsequently triggers a reversible magnetic transition with the emergence of an exotic ferromagnetic state from this paramagnetic compound. Our theoretical analysis reveals that hydrogen incorporation plays a critical role in both the electronic and magnetic phase transitions via structural distortion and electron doping. These observations not only help understand the correlated magnetic and electronic transitions in perovskite ruthenate systems, but also provide novel pathways to design electronic phases in correlated materials.

cond-mat.str-el↗

arXiv2021

Manipulating Berry curvature of SrRuO3 thin films via epitaxial strain

Berry curvature plays a crucial role in exotic electronic states of quantum materials, such as intrinsic anomalous Hall effect. As Berry curvature is highly sensitive to subtle changes of electronic band structures, it can be finely tuned via external stimulus. Here, we demonstrate in SrRuO3 thin films that both the magnitude and sign of anomalous Hall resistivity can be effectively controlled with epitaxial strain. Our first-principles calculations reveal that epitaxial strain induces an additional crystal field splitting and changes the order of Ru d orbital energies, which alters the Berry curvature and leads to the sign and magnitude change of anomalous Hall conductivity. Furthermore, we show that the rotation of Ru magnetic moment in real space of tensile strained sample can result in an exotic nonmonotonic change of anomalous Hall resistivity with the sweeping of magnetic field, resembling the topological Hall effect observed in non-coplanar spin systems. These findings not only deepen our understanding of anomalous Hall effect in SrRuO3 systems, but also provide an effective tuning knob to manipulate Berry curvature and related physical properties in a wide range of quantum materials.

cond-mat.mtrl-sci↗

arXiv2020

Anomalous Kerr Effect in SrRuO$_3$ Thin Films

We study the magneto-optical Kerr effect (MOKE) in SrRuO$_3$ thin films, uncovering wide regimes of wavelength, temperature, and magnetic field where the Kerr rotation is not simply proportional to the magnetization but instead displays two-component behavior. One component of the MOKE signal tracks the average magnetization, while the second "anomalous" component bears a resemblance to anomalies in the Hall resistivity which have been previously reported in skyrmion materials. We present a theory showing that the MOKE anomalies arise from the non-monotonic relation between the Kerr angle and the magnetization, when we average over magnetic domains which proliferate near the coercive field. Our results suggest that inhomogeneous domain formation, rather than skyrmions, may provide a common origin for the observed MOKE and Hall resistivity anomalies.

cond-mat.str-el↗

arXiv2020

Robust ferromagnetism in highly strained SrCoO3 thin films

Epitaxial strain provides important pathways to control the magnetic and electronic states in transition metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen vacancy formation energy, which hinders the direct manipulation of their intrinsic properties. Here using a post-deposition ozone annealing method, we obtained a series of oxygen stoichiometric SrCoO3 thin films with the tensile strain up to 3.0%. We observed a robust ferromagnetic ground state in all strained thin films, while interestingly the tensile strain triggers a distinct metal to insulator transition along with the increase of the tensile strain. The persistent ferromagnetic state across the electrical transition therefore suggests that the magnetic state is directly correlated with the localized electrons, rather than the itinerant ones, which then calls for further investigation of the intrinsic mechanism of this magnetic compound beyond the double-exchange mechanism.

cond-mat.str-el↗

arXiv2020

Enhancement of superconductivity in organic-inorganic hybrid topological materials

Inducing or enhancing superconductivity in topological materials is an important route toward topological superconductivity. Reducing the thickness of transition metal dichalcogenides (e.g. WTe2 and MoTe2) has provided an important pathway to engineer superconductivity in topological matters; for instance, emergent superconductivity with Tc=0.82 K was observed in monolayer WTe2 which also hosts intriguing quantum spin Hall effect, although the bulk crystal is nonsuperconducting. However, such monolayer sample is difficult to obtain, unstable in air, and with extremely low Tc, which could pose a grand challenge for practical applications. Here we report an experimentally convenient approach to control the interlayer coupling to achieve tailored topological properties, enhanced superconductivity and good sample stability through organic cation intercalation of the Weyl semimetals MoTe2 and WTe2. The as-formed organic-inorganic hybrid crystals are weak topological insulators with enhanced Tc of 7.0 K for intercalated MoTe2 (0.25 K for pristine crystal) and 2.3 K for intercalated WTe2 (2.8 times compared to monolayer WTe2). Such organic-cationintercalation method can be readily applied to many other layered crystals, providing a new pathway for manipulating their electronic, topological and superconducting properties.

cond-mat.mtrl-sci↗

arXiv2018

Electric-field Control of Magnetism with Emergent Topological Hall Effect in SrRuO3 through Proton Evolution

Ionic substitution forms an essential pathway to manipulate the carrier density and crystalline symmetry of materials via ion-lattice-electron coupling, leading to a rich spectrum of electronic states in strongly correlated systems. Using the ferromagnetic metal SrRuO3 as a model system, we demonstrate an efficient and reversible control of both carrier density and crystalline symmetry through the ionic liquid gating induced protonation. The insertion of protons electron-dopes SrRuO3, leading to an exotic ferromagnetic to paramagnetic phase transition along with the increase of proton concentration. Intriguingly, we observe an emergent topological Hall effect at the boundary of the phase transition as the consequence of the newly-established Dzyaloshinskii-Moriya interaction owing to the breaking of inversion symmetry in protonated SrRuO3 with the proton compositional film-depth gradient. We envision that electric-field controlled protonation opens a novel strategy to design material functionalities.

cond-mat.str-el↗

arXiv2016

Observation of Quantum Griffiths Singularity and Ferromagnetism at Superconducting LaAlO3/SrTiO3(110) Interface

Diverse phenomena emerge at the interface between band insulators LaAlO3 and SrTiO3, such as superconductivity and ferromagnetism, showing an opportunity for potential applications as well as bringing fundamental research interests. Particularly, the two-dimensional electron gas formed at LaAlO3/SrTiO3 interface offers an appealing platform for quantum phase transition from a superconductor to a weakly localized metal. Here we report the superconductor-metal transition in superconducting two-dimensional electron gas formed at LaAlO3/SrTiO3(110) interface driven by a perpendicular magnetic field. Interestingly, when approaching the quantum critical point, the dynamic critical exponent is not a constant but a diverging value, which is a direct evidence of quantum Griffiths singularity raised from quenched disorder at ultralow temperatures. Furthermore, the hysteretic property of magnetoresistance was firstly observed at LaAlO3/SrTiO3(110) interfaces, which suggests potential coexistence of superconductivity and ferromagnetism.

cond-mat.supr-con↗