arXiv subjects

Shengwei Jiang

Publications and source records attributed to Shengwei Jiang.

40 records · Page 3Linked to original sources

arXiv2018

Electric-field switching of two-dimensional van der Waals magnets

Controlling magnetism by purely electrical means is a key challenge to better information technology1. A variety of material systems, including ferromagnetic (FM) metals2,3,4, FM semiconductors5, multiferroics6,7,8 and magnetoelectric (ME) materials9,10, have been explored for the electric-field control of magnetism. The recent discovery of two-dimensional (2D) van der Waals magnets11,12 has opened a new door for the electrical control of magnetism at the nanometre scale through a van der Waals heterostructure device platform13. Here we demonstrate the control of magnetism in bilayer CrI3, an antiferromagnetic (AFM) semiconductor in its ground state12, by the application of small gate voltages in field-effect devices and the detection of magnetization using magnetic circular dichroism (MCD) microscopy. The applied electric field creates an interlayer potential difference, which results in a large linear ME effect, whose sign depends on the interlayer AFM order. We also achieve a complete and reversible electrical switching between the interlayer AFM and FM states in the vicinity of the interlayer spin-flip transition. The effect originates from the electric-field dependence of the interlayer exchange bias.

cond-mat.mes-hall↗

arXiv2018

Valley-selective exciton bistability in a suspended monolayer semiconductor

We demonstrate robust power- and wavelength-dependent optical bistability in fully suspended monolayers of WSe2 near the exciton resonance. Bistability has been achieved under continuous-wave optical excitation at an intensity level of 10^3 W/cm^2. The observed bistability is originated from a photo-thermal mechanism, which provides both optical nonlinearity and passive feedback, two essential elements for optical bistability. Under a finite magnetic field, the exciton bistability becomes helicity dependent, which enables repeatable switching of light purely by its polarization.

cond-mat.mes-hall↗

arXiv2018

Controlling magnetism in 2D CrI3 by electrostatic doping

The atomic thickness of two-dimensional (2D) materials provides a unique opportunity to control material properties and engineer new functionalities by electrostatic doping. Electrostatic doping has been demonstrated to tune the electrical and optical properties of 2D materials in a wide range, as well as to drive the electronic phase transitions. The recent discovery of atomically thin magnetic insulators has opened up the prospect of electrical control of magnetism and new devices with unprecedented performance. Here we demonstrate control of the magnetic properties of monolayer and bilayer CrI3 by electrostatic doping using a dual-gate field-effect device structure. In monolayer CrI3, doping significantly modifies the saturation magnetization, coercive force and Curie temperature, showing strengthened (weakened) magnetic order with hole (electron) doping. Remarkably, in bilayer CrI3 doping drastically changes the interlayer magnetic order, causing a transition from an antiferromagnetic ground state in the pristine form to a ferromagnetic ground state above a critical electron density. The result reveals a strongly doping-dependent interlayer exchange coupling, which enables robust switching of magnetization in bilayer CrI3 by small gate voltages.

cond-mat.mtrl-sci↗

arXiv2017

Observation of spin-orbit magnetoresistance in metallic thin films on magnetic insulators

A magnetoresistance effect induced by the Rashba spin-orbit interaction was predicted, but not yet observed, in bilayers consisting of normal metal and ferromagnetic insulator. Here, we present an experimental observation of this new type of spin-orbit magnetoresistance (SOMR) effect in a bilayer structure Cu[Pt]/Y3Fe5O12 (YIG), where the Cu/YIG interface is decorated with nanosize Pt islands. This new MR is apparently not caused by the bulk spin-orbit interaction because of the negligible spin-orbit interaction in Cu and the discontinuity of the Pt islands. This SOMR disappears when the Pt islands are absent or located away from the Cu/YIG interface, therefore we can unambiguously ascribe it to the Rashba spin-orbit interaction at the interface enhanced by the Pt decoration. The numerical Boltzmann simulations are consistent with the experimental SOMR results in the angular dependence of magnetic field and the Cu thickness dependence. Our finding demonstrates the realization of the spin manipulation by interface engineering.

cond-mat.mtrl-sci↗