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Shengying Yue

Publications and source records attributed to Shengying Yue.

13 recordsLinked to original sources

Four-phonon scattering and coherent heat transport in ultrawide-bandgap SrSnO3

SrSnO3 is a promising ultrawide-bandgap perovskite oxide whose thermal transport is governed by structural distortions and anharmonic lattice dynamics. Here, we investigate the lattice thermal conductivity (kL) of orthorhombic and cubic SrSnO3 within a unified first-principles framework combining self-consistent phonon renormalization, three- and four-phonon scattering, and coherent heat transport. Bonding analysis reveals a rigid Sn-O octahedral framework embedded in a weakly bonded Sr sublattice, giving rise to low-frequency vibrational modes susceptible to strong anharmonic effects. Four-phonon scattering is identified as a key mechanism limiting particle-like heat conduction, reducing the Peierls thermal conductivity by 19.4% at 300 K in the orthorhombic phase and by 52.1% at 1300 K in the cubic phase, while the coherent contribution provides a finite channel that partially compensates this reduction. We further show that the apparent agreement between three-phonon calculations and experimental thermal conductivity at room temperature is not indicative of a complete physical description. Instead, it arises from a near cancellation between four-phonon suppression of the particle-like channel and the neglected coherent contribution. This cancellation breaks down when the full temperature dependence is considered, where only the combined treatment improves agreement with the experimentally observed scaling behavior. A physically consistent description of kL therefore requires phonon renormalization, four-phonon scattering, and coherent transport to be treated on equal footing rather than inferred from three-phonon agreement at a single temperature. These results provide microscopic insight into thermal transport in ultrawide-bandgap stannate perovskites and establish a benchmark for anharmonic transport in strongly distorted oxides.

cond-mat.mtrl-sci

A review of simulation, measurement techniques, and development in chip thermal design

As integrated circuits advance toward higher power densities, three-dimensional integration, and heterogeneous packaging, chip thermal management has become a key bottleneck limiting device performance, reliability, and lifetime. This article systematically reviews numerical simulation methods and experimental measurement techniques for chip thermal design, with particular emphasis on the technical challenges associated with multiscale and multiphysics coupling, thermal boundary resistance measurement, and high-heat-flux cooling. We first introduce macro- and device-scale thermal simulation methods, including equivalent thermal-circuit models, the finite element method, and computational fluid dynamics, and discuss the application of phonon transport theory and molecular dynamics at microscopic scales. We then examine the advantages and limitations of infrared thermography, thermoreflectance, Raman thermometry, and embedded sensors. Current limitations include the enormous computational cost, inaccurate multiscale coupling, expensive experimental facilities, and the physical limits of conventional cooling technologies. Finally, we discuss emerging directions, including AI-accelerated thermal simulation, embedded microchannel liquid cooling, two-phase cooling, advanced high-thermal-conductivity materials, and multiphysics co-design, with the aim of advancing chip thermal management toward greater efficiency and intelligence.

cond-mat.mtrl-sci

Metavalent Bonding-Induced Phonon Hardening and Giant Anharmonicity in BeO

The search for materials with intrinsically low thermal conductivity ($κ_L$) is critical for energy applications, yet conventional descriptors often fail to capture the complex interplay between bonding and lattice dynamics. Here, first-principles calculations are used to contrast the thermal transport in covalent zincblende (zb) and metavalent rocksalt (rs) BeO. We find that the metavalent bonding in rs-BeO enhances lattice anharmonicity, activating multi-phonon scattering channels and suppressing phonon transport. This results in an ultralow $κ_L$ of 24 W m$^{-1}$ K$^{-1}$ at 300 K, starkly contrasting with the zb phase (357 W m$^{-1}$ K$^{-1}$). Accurately modeling such strongly anharmonic systems requires explicit inclusion of temperature-dependent phonon renormalization and four-phonon scattering. These contributions, negligible in zb-BeO, are essential for high-precision calculations of the severely suppressed $κ_L$ in rs-BeO. Finally, we identify three key indicators to guide the discovery of metavalently bonded, incipient-metallic materials: (i) an NaCl-type crystal structure, (ii) large Grüneisen parameters ($\textgreater$2), and (iii) a breakdown of the Lyddane-Sachs-Teller relation. These findings provide microscopic insight into thermal transport suppression by metavalent bonding and offer a predictive framework for identifying promising thermoelectrics and phase-change materials.

cond-mat.mtrl-sci

Intrinsic Fracture Nonreciprocity at the Nanoscale

We reveal intrinsic fracture nonreciprocity, manifesting as directional asymmetry in crack resistance, in two-dimensional heterostructures engineered through lattice-mismatched interfaces. Density-functional theory combined with machine-learning molecular dynamics show that intrinsic lattice mismatch between bonded component crystals imprints asymmetric prestrain states at crack tips, governing bond-breaking thresholds through charge redistribution. The failure criterion obeys a universal exponential scaling law between normalized charge density and bond strain, insensitive to bonding chemistry and local atomic environment. The magnitude of nonreciprocity scales systematically with lattice mismatch, reaching 49% at 10% mismatch. Validation across hexagonal, square, rectangular, and oblique two-dimensional lattices confirms universality, establishing interface strain engineering as a general design principle that bridges electronic structure to nanoscale failure, enabling rational design of damage-tolerant nanostructures.

cond-mat.mtrl-sci

Strain-Gradient-Driven Decoupling of Thermal Suppression from Anisotropy in \b{eta}-Ga2O3

Strain gradients, ubiquitous in flexible devices and epitaxial nanostructures, are a major blind spot for thermal transport in \b{eta}-Ga2O3. We establish that strain gradient unlocks a thermal conductivity (k) suppression mechanism fundamentally more potent than uniform strain: moderate uniaxial gradients (0.6%/nm) suppress k by 32-37% (27-30%) in thin films (nanowires), intensifying to 43.3% with biaxial gradients. This reduction far exceeds that from equivalent uniform strain and surpasses benchmark materials like silicon and BAs. Critically, a surprising decoupling emerges: while 3% uniform strain alters thermal anisotropy by ~25%, strain gradient strongly suppresses k with preserving this ratio. Mechanistically, strain gradients-induced symmetry breaking and enhanced mode coupling anisotropically activate forbidden scattering channels, making gradient-driven scattering dominant over intrinsic phonon scattering below 6.25 THz. These findings redefine non-uniform strain from a parasitic flaw into a powerful design tool for engineering thermal isolation and heat flux in next-generation flexible and high-power \b{eta}-Ga2O3 electronics.

cond-mat.mtrl-sci

Crystal-symmetry-based selection rules for anharmonic phonon-phonon scattering from a group theory formalism

Anharmonic phonon-phonon scattering serves a critical role in heat conduction in solids. Previous studies have identified many selection rules for possible phonon-phonon scattering channels imposed by phonon energy and momentum conservation conditions and crystal symmetry. However, the crystal-symmetry-based selection rules have mostly been \textit{ad hoc} so far in selected materials, and a general formalism that can summarize known selection rules and lead to new ones in any given crystal is still lacking. In this work, we apply a general formalism for symmetry-based scattering selection rules based on the group theory to anharmonic phonon-phonon scatterings, which can reproduce known selection rules and guide the discovery of new selection rules between phonon branches imposed by the crystal symmetry. We apply this formalism to analyze the phonon-phonon scattering selection rules imposed by the in-plane symmetry of graphene, and demonstrate the significant impact of symmetry-breaking strain on the lattice thermal conductivity. Our work quantifies the critical influence of the crystal symmetry on the lattice thermal conductivity in solids and suggests routes to engineer heat conduction by tuning the crystal symmetry.

cond-mat.mtrl-sci

Impact of Electron-Phonon Interaction on Thermal Transport: A Review

A thorough understanding of the microscopic picture of heat conduction in solids is critical to a broad range of applications, from thermal management of microelectronics to more efficient thermoelectric materials. The transport properties of phonons, the major microscopic heat carriers in semiconductors and insulators, particularly their scattering mechanisms, have been a central theme in microscale heat conduction research. In the past two decades, significant advancements have been made in computational and experimental efforts to probe phonon-phonon, phonon-impurity, and phonon-boundary scattering channels in detail. In contrast, electron-phonon scatterings were long thought to have negligible effects on thermal transport in most materials under ambient conditions. This article reviews the recent progress in first-principles computations and experimental methods that show clear evidence for a strong impact of electron-phonon interaction on phonon transport in a wide variety of technologically relevant solid-state materials. Under thermal equilibrium conditions, electron-phonon interactions can modify the total phonon scattering rates and renormalize the phonon frequency, as determined by the imaginary part and the real part of the phonon self-energy, respectively. Under nonequilibrium transport conditions, electron-phonon interactions can affect the coupled transport of electrons and phonons in the bulk through the "phonon or electron drag" mechanism as well as the interfacial thermal transport. Based on these recent results, we evaluate the potential use of electron-phonon interactions to control thermal transport in solids. We also provide an outlook on future directions of computational and experimental developments.

cond-mat.mtrl-sci

Phonon softening near topological phase transitions

Topological phase transitions occur when the electronic bands change their topological properties, typically featuring the closing of the bandgap. While the influence of topological phase transitions on electronic and optical properties has been extensively studied, its implication on phononic properties and thermal transport remains unexplored. In this work, we use first-principles simulations to show that certain phonon modes are significantly softened near topological phase transitions, leading to increased phonon-phonon scattering and reduced lattice thermal conductivity. We demonstrate this effect using two model systems: pressure-induced topological phase transition in $\rm ZrTe_5$ and chemical composition induced topological phase transition in $\rm{Hg_{1-x}Cd_{x}Te}$. We attribute the phonon softening to emergent Kohn anomalies associated with the closing of the bandgap. Our study reveals the strong connection between electronic band structures and lattice instabilities and opens up a potential direction towards controlling heat conduction in solids.

cond-mat.mtrl-sci

Soft phonons and ultralow lattice thermal conductivity in the Dirac semimetal Cd3As2

Recently, Cd3As2 has attracted intensive research interest as an archetypical Dirac semimetal, hosting three-dimensional linear-dispersive electronic bands near the Fermi level. Previous studies have shown that single-crystalline Cd3As2 has an anomalously low lattice thermal conductivity, ranging from 0.3 W/mK to 0.7 W/mK at 300 K, which has been attributed to point defects. In this work, we combine first-principles lattice dynamics calculations and temperature-dependent high-resolution Raman spectroscopy of high-quality single-crystal thin films grown by molecular beam epitaxy to reveal the existence of a group of soft optical phonon modes at the Brillouin zone center of Cd3As2. These soft phonon modes significantly increase the scattering phase space of heat-carrying acoustic phonons and are the origin of the low lattice thermal conductivity of Cd3As2. Furthermore, we show that the interplay between the phonon-phonon Umklapp scattering rates and the soft optical phonon frequency explains the unusual non-monotonic temperature dependence of the lattice thermal conductivity of Cd3As2. Our results further suggest that the soft phonon modes are potentially induced by a Kohn anomaly associated with the Dirac nodes, in analogy to similar, nonetheless weaker, effects in graphene and Weyl semimetals.

cond-mat.mtrl-sci

Widely Tunable Optical and Thermal Properties of Dirac Semimetal Cd$_3$As$_2$

In this paper we report a detailed analysis of the temperature-dependent optical properties of epitaxially grown cadmium arsenide (Cd$_3$As$_2$), a newly discovered three-dimensional Dirac semimetal. Dynamic Fermi level tuning -- instigated from Pauli-blocking in the linear Dirac cone -- and varying Drude response, generate large variations in the mid and far-infrared optical properties. We demonstrate thermo-optic shifts larger than those of traditional III-V semiconductors, which we attribute to the obtained large thermal expansion coefficient as revealed by first-principles calculations. Electron scattering rate, plasma frequency edge, Fermi level shift, optical conductivity, and electron effective mass analysis of Cd$_3$As$_2$ thin-films are quantified and discussed in detail. Our ab initio density functional study and experimental analysis of epitaxially grown Cd$_3$As$_2$ promise applications for nanophotonic and nanoelectronic devices, such as reconfigurable metamaterials and metasurfaces, nanoscale thermal emitters, and on-chip directional antennas.

physics.app-ph

Coherent Phonon Transport in Two-dimensional Graphene Superstructures

Coherent wave effects of thermal phonons hold promise of transformative opportunities in thermal transport control but remain largely unexplored due to the small wavelength of thermal phonons, typically below a few nanometers. This small length scale indicates that, instead of artificial phononic crystals, a more promising direction is to examine the coherent phonon effects in natural materials with hierarchical superstructures matching the thermal phonon wavelength. In this work, we use first-principles simulations to characterize the previously unstudied thermal properties of D-graphene and T-graphene, two-dimensional carbon allotropes based upon the traditional graphene structure but containing a secondary, in-plane periodicity. We find that despite very similar atomic structure and bonding strength, D-graphene and T-graphene possess significantly different thermal properties than that of pristine graphene. At room temperature, the calculated thermal conductivity of D-graphene and T-graphene is 600 Wm-1K-1 and 800 Wm-1K-1 compared to over 3000 Wm-1K-1 for graphene. We attribute these distinct properties to the presence of naturally occurring, low frequency optical phonon modes that display characteristics of phonon coherence and arise from a folding of the acoustic modes and the associated frequency gap opening, a phenomenon also found in superlattices where an out of plane periodicity is introduced. Furthermore, we observe significantly enhanced Umklapp scatterings in D- and T-graphene that largely suppress the hydrodynamic phonon transport in pristine graphene. Our study presents D-graphene and T-graphene as ideal model systems to explore the coherent phonon effects in 2D and demonstrates the potential of using coherent phonon effects to significantly modify thermal transport of 2D materials without making drastic changes to their fundamental compositions.

cond-mat.mtrl-sci

Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strain

Epitaxial growth of III-V semiconductors on Si is a promising route for silicon photonics. Threading dislocations and the residual thermal stress generated during growth are expected to affect the thermal conductivity of the III-V semiconductors, which is crucial for efficient heat dissipation from photonic devices built on this platform. In this work, we combine a non-contact laser-induced transient thermal grating technique with ab initio phonon simulations to investigate the in-plane thermal transport of epitaxial GaAs-based buffer layers on Si, employed in the fabrication of III-V quantum dot lasers. Surprisingly, we find a significant reduction of the in-plane thermal conductivity of GaAs, up to 19%, as a result of a small in-plane biaxial stress of 250 MPa. Using ab initio phonon calculations, we attribute this effect to the enhancement of phonon-phonon scattering caused by the in-plane biaxial stress, which breaks the cubic crystal symmetry of GaAs. Our results indicate the importance of eliminating the residual thermal stress in the epitaxial III-V layers on Si to avoid the reduction of thermal conductivity and facilitate heat dissipation. Additionally, our results showcase potential means of effectively controlling thermal conductivity of solids with external strain/stress.

cond-mat.mtrl-sci

Hydrodynamic Phonon Transport Perpendicular to Diffuse-Gray Boundaries

In this paper, we examine the application of an ideal phonon-hydrodynamic material as the heat transfer medium between two non-hydrodynamic contacts with a finite temperature difference. We use the integral-equation approach to solve a modified phonon Boltzmann transport equation with the displaced Bose-Einstein distribution as the equilibrium distribution between two boundaries perpendicular to the heat transfer direction. When the distance between the boundaries is smaller than the phonon normal scattering mean free path, our solution converges to the ballistic limit as expected. In the other limit, we find that, although the local thermal conductivity in the bulk of the hydrodynamic material approaches infinity, the thermal boundary resistance at the hydrodynamic/non-hydrodynamic interfaces becomes dominant. Our study provides insights to both the steady-state thermal characterization of phonon-hydrodynamic materials and the practical application of phonon-hydrodynamic materials for thermal management.

cond-mat.mtrl-sci