arXiv subjects

Shengyuan A. Yang

Publications and source records attributed to Shengyuan A. Yang.

At least 73 records · Page 4Linked to original sources

arXiv2023

Magnetic eight-fold nodal-point and nodal-network fermions in MnB2

Realizing topological semimetal states with novel emergent fermions in magnetic materials is a focus of current research. Based on first-principle calculations and symmetry analysis, we reveal interesting magnetic emergent fermions in an existing material MnB2. In the temperature range from 157 K to 760 K, MnB2 is a collinear antiferromagnet. We find the coexistence of eightfold nodal points and nodal net close to the Fermi level, which are protected by the spin group in the absence of spin-orbit coupling. Depending on the Neel vector orientation, consideration of spin-orbit coupling will either open small gaps at these nodal features, or transform them into magnetic linear and quadratic Dirac points and nodal rings. Below 157 K, MnB2 acquires weak ferromagnetism due to spin tilting. We predict that this transition is accompanied by a drastic change in anomalous Hall response, from zero above 157 K to 200 $Ω\cdot \text{cm}^{-1}$ below 157 K.

cond-mat.mtrl-sci↗

arXiv2023

Quadratic nodal point in a two-dimensional noncollinear antiferromagnet

Quadratic nodal point (QNP) in two dimensions has so far been reported only in nonmagnetic materials and in the absence of spin-orbit coupling. Here, by first-principles calculations and symmetry analysis, we predict stable QNP near Fermi level in a two-dimensional kagome metal-organic framework material, Cr$_3$(HAB)$_2$, which features noncollinear antiferromagnetic ordering and sizable spin-orbit coupling. Effective kp and lattice models are constructed to capture such magnetic QNPs. Besides QNP, we find Cr$_3$(HAB)$_2$ also hosts six magnetic linear nodal points protected by mirror as well as $C_{2z}T$ symmetry. Properties associated to these nodal points, such as topological edge states and quantized optical absorbance, are discussed.

cond-mat.mes-hall↗

arXiv2023

Half-Valley Ohmic Contact and Contact-Limited Valley-Contrasting Current Injection

Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however, remain an open question. Here we generalize the concept of metal/semiconductor (MS) contact into the realm of valleytronics. We propose a half-valley Ohmic contact based on FVSC/graphene heterostructure where the two valleys of FVSC separately forms Ohmic and Schottky contacts with those of graphene, thus allowing current to be valley-selectively injected through the `Ohmic' valley while being blocked in the `Schottky' valley. We develop a theory of contact-limited valley-contrasting current injection and demonstrate that such transport mechanism can produce gate-tunable valley-polarized injection current. Using RuCl$_2$/graphene heterostructure as an example, we illustrate a device concept of valleytronic barristor where high valley polarization efficiency and sizable current on/off ratio, can be achieved under experimentally feasible electrostatic gating conditions. These findings uncover contact-limited valley-contrasting current injection as an efficient mechanism for valley polarization manipulation, and reveals the potential of valleytronic MS contact as a functional building block of valleytronic device technology.

cond-mat.mes-hall↗

arXiv2023

Electrically Controllable Chiral Phonons in Ferroelectric Materials

Chiral phonons have attracted increasing attention, as they play important roles in many different systems and processes. However, a method to control phonon chirality by external fields is still lacking. Here, we propose that in displacement-type ferroelectric materials, an external electric field can reverse the chirality of chiral phonons via ferroelectric switching. Using first-principles calculations, we demonstrate this point in the well known two-dimensional ferroelectric In$_2$Se$_3$. This reversal may lead to a number of electrically switchable phenomena, such as chiral phonon induced magnetization, phonon Hall effect, and possible interface phonon modes at ferroelectric domain boundaries. Our work offers a new way to control chiral phonons, which could be useful for the design of thermal or information devices based on them.

cond-mat.mtrl-sci↗

arXiv2023

Upper bound of a band complex

Band structure for a crystal generally consists of connected components in energy-momentum space, known as band complexes. Here, we explore a fundamental aspect regarding the maximal number of bands that can be accommodated in a single band complex. We show that in principle a band complex can have no finite upper bound for certain space groups. It means infinitely many bands can entangle together, forming a connected pattern stable against symmetry-preserving perturbations. This is demonstrated by our developed inductive construction procedure, through which a given band complex can always be grown into a larger one by gluing a basic building block to it. As a by-product, we demonstrate the existence of arbitrarily large accordion type band structures containing $N_C=4n$ bands, with $n\in\mathbb{N}$.

cond-mat.mtrl-sci↗

arXiv2023

Nonlinear current response of two-dimensional systems under in-plane magnetic field

We theoretically investigate the nonlinear response current of a two-dimensional system under an in-plane magnetic field. Based on the extended semiclassical theory, we develop a unified theory including both longitudinal and transverse currents and classify contributions according to their scaling with the relaxation time. Besides time-reversal-even contributions, we reveal a previously unknown time-reversal-odd contribution to the Hall current, which occurs in magnetic systems, exhibits band geometric origin, and is linear in relaxation time. We show that the different contributions exhibit different symmetry characters, especially in their angular dependence on the field orientation, which can be used to distinguish them in experiment. The theory is explicitly demonstrated in the study of the Rashba model. Our work presents a deepened understanding of nonlinear planar transport, proposes approaches to distinguish different contributions, and sheds light on possible routes to enhance the effect in practice.

cond-mat.mes-hall↗

arXiv2023

Magnetic Real Chern Insulator in 2D Metal-Organic Frameworks

Real Chern insulators have attracted great interest, but so far, their material realization is limited to nonmagnetic crystals and to systems without spin-orbit coupling. Here, we reveal magnetic real Chern insulator (MRCI) state in a recently synthesized metal-organic framework material Co3(HITP)2. Its ground state with in-plane ferromagnetic ordering hosts a nontrivial real Chern number, enabled by the C2zT symmetry and robust against spin-orbit coupling. Distinct from previous nonmagnetic examples, the topological corner zero-modes of MRCI are spin-polarized. Furthermore, under small tensile strains, the material undergoes a topological phase transition from MRCI to a magnetic double-Weyl semimetal phase, via a pseudospin-1 critical state. Similar physics can also be found in closely related materials Mn3(HITP)2 and Fe3(HITP)2, which are also existing. Possible experimental detections and implications of an emerging magnetic flat band in the system are discussed.

cond-mat.mtrl-sci↗

arXiv2023

Observation of 2D Weyl Fermion States in Epitaxial Bismuthene

A two-dimensional (2D) Weyl semimetal featuring a spin-polarized linear band dispersion and a nodal Fermi surface is a new topological phase of matter. It is a solid-state realization of Weyl fermions in an intrinsic 2D system. The nontrivial topology of 2D Weyl cones guarantees the existence of a new form of topologically protected boundary states, Fermi string edge states. In this work, we report the realization of a 2D Weyl semimetal in monolayer-thick epitaxial bismuthene grown on SnS(Se) substrate. The intrinsic band gap of bismuthene is eliminated by the space-inversion-symmetry-breaking substrate perturbations, resulting in a gapless spin-polarized Weyl band dispersion. The linear dispersion and spin polarization of the Weyl fermion states are observed in our spin and angle-resolved photoemission measurements. In addition, the scanning tunneling microscopy/spectroscopy reveals a pronounced local density of states at the edge, suggesting the existence of Fermi string edge states. These results open the door for the experimental exploration of the exotic properties of Weyl fermion states in reduced dimensions.

cond-mat.mtrl-sci↗

arXiv2023

Three-dimensional real Chern insulator in bulk $γ$-graphyne

The real Chern insulator state, featuring nontrivial real Chern number and second-order boundary modes, has been revealed in a few two-dimensional systems. The concept can be extended to three dimensions (3D), but a proper material realization is still lacking. Here, based on first-principles calculations and theoretical analysis, we identify the recently synthesized bulk $γ$-graphyne as a 3D real Chern insulator. Its nontrivial bulk topology leads to topological hinge modes spreading across the 1D edge Brillouin zone. Under compression of the interlayer distance, the system can undergo a topological phase transition into a real nodal-line semimetal, which hosts three bulk nodal rings and topological boundary modes on both surfaces and hinges. We also develop a minimal model which captures essential physics of the system.

cond-mat.mtrl-sci↗

arXiv2023

Classification of time-reversal-invariant crystals with gauge structures

A peculiar feature of quantum states is that they may embody so-called projective representations of symmetries rather than ordinary representations. Projective representations of space groups-the defining symmetry of crystals-remain largely unexplored. Despite recent advances in artificial crystals, whose intrinsic gauge structures necessarily require a projective description, a unified theory is yet to be established. Here, we establish such a unified theory by exhaustively classifying and representing all 458 projective symmetry algebras of time-reversal-invariant crystals from 17 wallpaper groups in two dimensions-189 of which are algebraically non-equivalent. We discover three physical signatures resulting from projective symmetry algebras, including the shift of high-symmetry momenta, an enforced nontrivial Zak phase, and a spinless eight-fold nodal point. Our work offers a theoretical foundation for the field of artificial crystals and opens the door to a wealth of topological states and phenomena beyond the existing paradigms.

cond-mat.mes-hall↗

arXiv2023

Topological Hall Effect Driven by Short-Range Magnetic Orders in EuZn$_2$As$_2$

Short-range (SR) magnetic orders such as magnetic glass orders or fluctuations in a quantum system usually host exotic states or critical behaviors. As the long-range (LR) magnetic orders, SR magnetic orders can also break time-reversal symmetry and drive the non-zero Berry curvature leading to novel transport properties. In this work, we report that in EuZn$_2$As$_2$ compound, besides the LR A-type antiferromagnetic (AF) order, the SR magnetic order is observed in a wide temperature region. The magnetization measurements and electron spin resonance (ESR) measurements reveal the ferromagnetic (FM) correlations for this SR magnetic order which results in an obvious anomalous Hall effect above the AF transition. Moreover the ESR results reveal that this FM SR order coexists with LR AF order exhibiting anisotropic magnetic correlations below the AF transition. The interactions of LR and SR magnetism evolving with temperature and field can host non-zero spin charility and berry curvature leading the additional topological Hall contribution even in a centrosymmetric simple AF system. Our results indicate that EuZn$_2$As$_2$ is a fertile platform to investigate exotic magnetic and electronic states.

cond-mat.str-el↗

arXiv2023

Control over Berry Curvature Dipole with Electric Field in WTe2

Berry curvature dipole plays an important role in various nonlinear quantum phenomena. However, the maximum symmetry allowed for nonzero Berry curvature dipole in the transport plane is a single mirror line, which strongly limits its effects in materials. Here, via probing the nonlinear Hall effect, we demonstrate the generation of Berry curvature dipole by applied dc electric field in WTe2, which is used to break the symmetry constraint. A linear dependence between the dipole moment of Berry curvature and the dc electric field is observed. The polarization direction of the Berry curvature is controlled by the relative orientation of the electric field and crystal axis, which can be further reversed by changing the polarity of the dc field. Our Letter provides a route to generate and control Berry curvature dipole in broad material systems and to facilitate the development of nonlinear quantum devices.

cond-mat.mtrl-sci↗

arXiv2023

Berry curvature dipole and nonlinear Hall effect in two-dimensional Nb$_{2n+1}$Si$_n$Te$_{4n+2}$

Recent experiments have demonstrated interesting physics in a family of two-dimensional (2D) composition-tunable materials Nb$_{2n+1}$Si$_n$Te$_{4n+2}$. Here, we show that owing to its intrinsic low symmetry, metallic nature, tunable composition, and ambient stability, these materials offer a good platform for studying Berry curvature dipole (BCD) and nonlinear Hall effect. Using first-principles calculations, we find that BCD exhibits pronounced peaks in monolayer Nb$_{3}$SiTe$_{6}$ ($n=1$ case). Its magnitude decreases monotonically with $n$ and completely vanishes in the $n\rightarrow\infty$ limit. This variation manifests a special hidden dimensional crossover of the low-energy electronic states in this system. The resulting nonlinear Hall response from BCD in these materials is discussed. Our work reveals pronounced geometric quantities and nonlinear transport physics in Nb$_{2n+1}$Si$_n$Te$_{4n+2}$ family materials, which should be readily detected in experiment.

cond-mat.mtrl-sci↗

arXiv2022

Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator

In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, we report the observation of large bilinear magnetoresistance (BMR) in Bi2Se3 films decorated with transition metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce the quantum well states and reveal sizable RSS in all Bi2Se3 heterostructures with broken inversion symmetry. Our results show that charge-spin interconversion through RSS states in TIs can be fine-tuned through surface atom deposition and easily detected via BMR for potential spintronic applications.

cond-mat.mes-hall↗

arXiv2022

Plasmons in a two-dimensional nonsymmorphic nodal-line semimetal

Recent experiments have established a type of nonsymmorphic symmetry protected nodal lines in the family of two-dimensional (2D) composition tunable materials NbSi$_x$Te$_2$. Here, we theoretically study the plasmonic properties of such nonsymmorphic nodal-line semimetals. We show that the nonsymmorphic character endows the plasmons with extremely strong anisotropy. There exist both intraband and interband plasmon branches. The intraband branch is gapless and has a $q^{1/2}$ dispersion. It is most dispersive and is independent of carrier density in direction normal to the nodal line, whereas along the nodal line, its dispersion is largely suppressed and its frequency scales linearly with carrier density. The interband branches are gapped and their long wavelength limits are connected with van Hove singularities of the band structure. We find that the single particle excitations are strongly suppressed in such systems, which decreases the Landau damping of plasmons. These characters are further verified by first-principles calculations on 2D NbSi$_x$Te$_2$. Interesting features in static screening of charged impurity are also discussed. Our result reveals characteristic plasmons in a class of nonsymmorphic topological semimetals and offers guidance for its experimental detection and possible applications.

cond-mat.mes-hall↗

arXiv2022

2D Janus Niobium Oxydihalide NbO$XY$: Multifunctional High-Mobility Piezoelectric Semiconductor for Electronics, Photonics and Sustainable Energy Applications

Two-dimensional (2D) niobium oxydihalide NbOI$_2$ has been recently demonstrated as an excellent in-plane piezoelectric and nonlinear optical materials. Here we show that Janus niobium oxydihalide, NbO$XY$ (X, Y = Cl, Br, I and X$\neq$Y), is a multifunctional anisotropic semiconductor family with exceptional piezoelectric, electronic, photocatalytic and optical properties. NbO$XY$ are stable and mechancially flexible monolayers with band gap around the visible light regime of $\sim 1.9$ eV. The anisotropic carrier mobility of NbO$XY$ lies in the range of $10^3 \sim 10^4$ cm$^2$V$^{-1}$s$^{-1}$, which represents some of the highest among 2D semiconductors of bandgap $\gtrsim 2$ eV. Inversion symmetry breaking in Janus NbO$XY$ generates sizable out-of-plane $d_{31}$ piezoelectric response while still retaining a strong in-plane piezoelectricity. Remarkably, NbO$XY$ exhibits an additional out-of-plane piezoelectric response, $d_{32}$ as large as 0.55 pm/V. G$_0$W$_0$-BSE calculation further reveals the strong linear optical dichroism of NbO$XY$ in the visible-to-ultraviolet regime. The optical absorption peaks with $14\sim18$ \% in the deep UV regime ($5\sim6$ eV), outperforming the vast majority of other 2D materials. The high carrier mobility, strong optical absorption, sizable built-in electric field and band alignment compatible with overall water splitting further suggest the strengths of NbO$XY$ in energy conversion application. We further propose a directional stress sensing device to demonstrate how the out-of-plane piezoelectricity can be harnessed for functional device applications. Our findings unveil NbO$XY$ as an exceptional multifunctional 2D semiconductor for flexible electronics, optoelectronics, UV photonics, piezoelectric and sustainable energy applications.

cond-mat.mtrl-sci↗

arXiv2022

Encyclopedia of emergent particles in 528 magnetic layer groups and 394 magnetic rod groups

We present a systematic classification of emergent particles in all 528 magnetic layer groups and 394 magnetic rod groups, which describe two-dimensional and one-dimensional crystals respectively. Our approach is via constructing a correspondence between a given magnetic layer/rod group and one of the magnetic space group, such that all irreducible representations of the layer/rod group can be derived from those of the corresponding space group. Based on these group representations, we explicitly construct the effective models for possible band degeneracies and identify all emergent particles, including both spinless and spinful cases. We find that there are six kinds of particles protected by magnetic layer groups and three kinds by magnetic rod groups. Our work provides a useful reference for the search and design of emergent particles in lower dimensional crystals.

cond-mat.mtrl-sci↗

arXiv2022

Intrinsic ferromagnetic axion states and a single pair of Weyl fermions in the stable-state Mn\emph{X}$_{2}$\emph{B}$_{2}$\emph{T}$_{6}$-family materials

The intrinsic ferromagnetic (FM) axion insulators and Weyl semimetals (WSMs) with only single pair of Weyl points have drawn intensive attention but so far remain rare and elusive in real materials. Here, we propose a new class of Mn\emph{X}$_{2}$\emph{B}$_{2}$\emph{T}$_{6}$-B (\emph{X}=Ge, Sn, or Pb; \emph{B}=Sb or Bi; \emph{T}=Se or Te) family that is the stable structural form of this system. We find that the Mn\emph{X}$_{2}$\emph{B}$_{2}$\emph{T}$_{6}$-B family has not only the intrinsic FM axion insulators MnGe$_{2}$Bi$_{2}$Te$_{6}$-B, MnSn$_{2}$Bi$_{2}$Te$_{6}$-B, and MnPb$_{2}$Bi$_{2}$Te$_{6}$-B, but also the intrinsic WSM MnSn$_{2}$Sb$_{2}$Te$_{6}$-B with only a single pair of Weyl points. Thus, the Mn\emph{X}$_{2}$\emph{B}$_{2}$\emph{T}$_{6}$-B family can provide an ideal platform to explore the exotic topological magnetoelectric effect and the intrinsic properties related to Weyl points.

cond-mat.mtrl-sci↗