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Shereif Y. Mujahed

Publications and source records attributed to Shereif Y. Mujahed.

3 recordsLinked to original sources

Stress calculation in linear scaling DFT: convergence and dynamics

We present the approach needed to calculate stress within density functional theory (DFT) using a localised orbital basis, both for exact diagonalisation and linear scaling approaches, and demonstrate our implementation within the large scale DFT code Conquest. For the linear scaling approach, we test the rate of convergence of stress with density matrix range, and compare it to the convergence of energy and forces for different materials with a range of band gaps. We show that excellent convergence is found for modest cutoffs, and show that large-scale isothermal-isobaric molecular dynamics is stable and accurate.

cond-mat.mtrl-sci

Highly accurate local basis sets for large-scale DFT calculations in CONQUEST

Given the widespread use of density functional theory (DFT), there is an increasing need for the ability to model large systems (beyond 1,000 atoms). We present a brief overview of the large-scale DFT code Conquest, which is capable of modelling such large systems, and discuss approaches to the generation of consistent, well-converged pseudo-atomic basis sets which will allow such large scale calculations. We present tests of these basis sets for a variety of materials, comparing to fully converged plane wave results using the same pseudopotentials and grids.

cond-mat.mtrl-sci

Structural properties of Silicon-Germanium and Germanium-Silicon Core-Shell Nanowires

Core-shell nanowires made of Si and Ge can be grown experimentally with excellent control for different sizes of both core and shell. We have studied the structural properties of Si/Ge and Ge/Si core-shell nanowires aligned along the $[110]$ direction, with diameters up to 10.2~nm and varying core to shell ratios, using linear scaling Density Functional Theory (DFT). We show that Vegard's law, which is often used to predict the axial lattice constant, can lead to an error of up to 1\%, underlining the need for a detailed \emph{ab initio} atomistic treatment of the nanowire structure. We analyse the character of the intrinsic strain distribution and show that, regardless of the composition or bond direction, the Si core or shell always expands. In contrast, the strain patterns in the Ge shell or core are highly sensitive to the location, composition and bond direction. The highest strains are found at heterojunction interfaces and the surfaces of the nanowires. This detailed understanding of the atomistic structure and strain paves the way for studies of the electronic properties of core-shell nanowires and investigations of doping and structure defects.

cond-mat.mtrl-sci