arXiv subjects

Shi Xue Dou

Publications and source records attributed to Shi Xue Dou.

16 recordsLinked to original sources

arXiv2021

Epitaxial growth of bilayer Bi(110) on two-dimensional ferromagnetic Fe3GeTe2

Heterostructures of two-dimensional (2D) layered materials with selective compositions play an important role in creating novel functionalities. Effective interface coupling between 2D ferromagnet and electronic materials would enable the generation of exotic physical phenomena caused by intrinsic symmetry breaking and proximity effect at interfaces. Here, epitaxial growth of bilayer Bi(110) on 2D ferromagnetic Fe3GeTe2 (FGT) with large magnetic anisotropy has been reported. Bilayer Bi(110) islands are found to extend along fixed lattice directions of FGT. The six preferred orientations could be divided into two groups of three-fold symmetry axes with the difference approximately to 26°. Moreover, dI/dV measurements confirm the existence of interface coupling between bilayer Bi(110) and FGT. A variation of the energy gap at the edges of bilayer Bi(110) is also observed which is modulated by the interface coupling strengths associated with its buckled atomic structure. This system provides a good platform for further study of the exotic electronic properties of epitaxial Bi(110) on 2D ferromagnetic substrate and promotes potential applications in the field of spin devices.

cond-mat.mtrl-sci↗

arXiv2021

Superconductivity in Layered van der Waals Hydrogenated Germanene at High Pressure

Structural and superconducting transitions of layered van der Waals (vdW) hydrogenated germanene (GeH) were observed under high-pressure compression and decompression processes. GeH possesses a superconducting transition at critical temperature (Tc) of 5.41 K at 8.39 GPa. A crystalline to amorphous transition occurs at 16.80 GPa while superconductivity remains. An abnormally increased Tc up to 6.1 K has been observed in the decompression process while the GeH remained amorphous. Thorough in-situ high-pressure synchrotron X-ray diffraction and in-situ high-pressure Raman spectroscopy with the density functional theory simulations suggest that the superconductivity of GeH should be attributed to the increased density of states at the Fermi level as well as the enhanced electron-phonon coupling effect under high pressure. The decompression-driven superconductivity enhancement arises from pressure-induced phonon softening related to an in-plane Ge-Ge phonon mode. As an amorphous metal hydride superconductor, GeH provides a platform to study amorphous hydride superconductivity in layered vdW materials.

cond-mat.supr-con↗

arXiv2020

Kondo holes in the 2D itinerant Ising ferromagnet Fe3GeTe2

Heavy fermion (HF) states emerge in correlated quantum materials due to the interplay between localized magnetic moments and itinerant electrons, but rarely appear in 3d-electron systems due to high itinerancy of d-electrons. Here, an anomalous enhancement of Kondo screening is observed at the Kondo hole of local Fe vacancies in Fe3GeTe2 which is a recently discovered 3d-HF system featuring of Kondo lattice and two-dimensional itinerant ferromagnetism. An itinerant Kondo-Ising model is established to reproduce the experimental results which provides insight of the competition between Ising ferromagnetism and Kondo screening. This work explains the microscopic origin of the d-electron HF states and inspires study of the enriched quantum many-body phenomena with Kondo holes in Ising ferromagnets.

cond-mat.mtrl-sci↗

arXiv2017

Realization of Flat Band with Possible Nontrivial Topology in Electronic Kagome Lattice

The energy dispersion of fermions or bosons vanishes in momentum space if destructive quantum interference occurs in a frustrated Kagome lattice with only nearest-neighbour (NN) hopping. A discrete flat band (FB) without any dispersion is consequently formed, promising emergence of fractional quantum Hall states (FQHS) at high temperatures. Here, we report experimental realization of a FB with possible nontrivial topology in an electronic Kagome lattice on a twisted multilayer silicene. The electrons are localized in the Kagome lattice due to quantum destructive interference, and thus, their kinetic energy is quenched, which gives rise to a FB peak in density of states. A robust and pronounced one-dimensional edge state has been revealed at Kagome edge, which resides at higher energy than the FB. Our observations of the FB and the exotic edge state in electronic Kagome lattice open up the possibility towards the realization of fractional Chern insulators in two-dimensional materials.

cond-mat.mtrl-sci↗

arXiv2017

Transition from insulator to superconductor and significant enhancement of superconductivity in FeSe films via tuning Fe-vacancy disorders

In contrast to its bulk crystals, the FeSe film or layer exhibits better superconductivity performance, which attract much interest in its fundamental research as well as potential application. In present work, transition from insulator to superconductor and significant enhancement of superconductivity were achieved in the high quality (00l) oriented FeSe films via controlling the thickness as well as the Fe/Se ratio. The highest Tc up to 15.2 K (almost 2 times higher than those of bulk crystals) and Hc2 up to 35.5 T are obtained in our atmosphere-stable FeSe thin film with practical thickness (240 nm), implying their great potential application in the electronic devices at high magnetic fields. More importantly, it was found that the Fe-vacancy disorder in FeSe films is the intrinsic factor determining the evolution of the superconductivity, rather than thickness effect. In our non-superconducting FeSe film with Fe/Se ratio of 1.00:1.09, insulating \b{eta}-Fe1-xSe phase with iron-vacancy disorders is the main phase and more likely to be the parent phase of FeSe superconducting system. Tuning the Fe-vacancy disorders via changing the Fe/Se ratio can dramatically vary the concentration of charge carrier and introduce proper electron doping, which finally leads to the transition from insulator to superconductor and further enhancement in the superconductivity. Intriguingly, our results also indicate that when the Fe/Se ratio of film is beyond a critical value, superconducting FeSe films will become instable, and phase separation occurs with new non-superconducting phase precipitating in the superconducting matrix, causing the degradation in the superconductivity. The results in present work help us to well understand the intrinsic mechanism of superconductivity among Fe-Se superconducting system and provide a new strategy to further pursue higher Tc in these materials.

cond-mat.supr-con↗

arXiv2016

Beyond Bean's critical state model: On the origin of paramagnetic Meissner effect

Solving phenomenological macroscopic equations instead of microscopic Ginzburg-Landau equations for superconductors is much easier and can be advantageous in a variety of applications. However, till now, only Bean's critical state model is available for the description of irreversible properties. Here we propose a plausible overall macroscopic model for both reversible and irreversible properties, combining London theory and Bean's model together based on superposition principle. First, a simple case where there is no pinning is discussed, from which a microscopic basis for Bean's model is explored. It is shown that a new concept of 'flux share' is needed when the field is increased above the lower critical field. A portion of magnetic flux is completely shielded, named as 'Meissner share' and the rest penetrates through vortices, named as 'vortices share'. We argue that the flux shares are irreversible if there is pinning. It is shown that the irreversible flux shares can be the reason for observed peculiar reversible magnetization behavior near zero field. The overall macroscopic model seems to be valuable for the analysis of fundamental physical properties as well. As an example, it is shown the origin of paramagnetic Meissner effect can be explained by the phenomenological macroscopic model.

cond-mat.supr-con↗

arXiv2015

Mg coating induced superconductivity in the FeSe ultrathin film

The transition from insulator to superconductor was achieved in the non-superconducting FeSe ultrathin film via simple Mg coating technique in present work. It was found that in non-superconducting FeSe ultrathin film without Mg coating, insulating \b{eta}-Fe1-xSe phase with iron-vacancy disorders is the main phase and more likely to be the parent phase of FeSe superconducting system. Proper Mg coating on the surface of FeSe films can lead to Mg entering FeSe crystal lattice to fill up these Fe vacancies rather than replace Fe. Simultaneously, additional electron doping is introduced and the electron carrier concentration in this parent phase can be tuned, which is responsible for the SIT and evolution of superconductivity in this system. However, abnormal decrease of electron concentration was found in FeSe film with excessive Mg coating, which brings about the severe degradation in superconducting performance.

cond-mat.supr-con↗

arXiv2015

Observation of van Hove Singularities in Twisted Silicene Multilayers

Interlayer interactions perturb the electronic structure of two-dimensional materials and lead to new physical phenomena, such as van Hove singularities and Hofstadter's butterfly pattern. Silicene, the recently discovered two-dimensional form of silicon, is quite unique, in that silicon atoms adopt competing sp 2 and sp 3 hybridization states leading to a low-buckled structure promising relatively strong interlayer interaction. In multilayer silicene, the stacking order provides an important yet rarely explored degree of freedom for tuning its electronic structures through manipulating interlayer coupling. Here, we report the emergence of van Hove singularities in the multilayer silicene created by an interlayer rotation. We demonstrate that even a large-angle rotation (> 20 o ) between stacked silicene layers can generate a Moire pattern and van Hove singularities due to the strong interlayer coupling in multilayer silicene. Our study suggests an intriguing method for expanding the tunability of the electronic structure for electronic applications in this two-dimensional material.

cond-mat.mtrl-sci↗

arXiv2015

Investigation of Electron-Phonon Coupling in Epitaxial Silicene by In-situ Raman Spectroscopy

In this letter, we report that the special coupling between Dirac fermion and lattice vibrations, in other words, electron-phonon coupling (EPC), in silicene layers on Ag(111) surface was probed by an in-situ Raman spectroscopy. We find the EPC is significantly modulated due to tensile strain, which results from the lattice mismatch between silicene and the substrate, and the charge doping from the substrate. The special phonon modes corresponding to two-dimensional electron gas scattering at edge sites in the silicene were identified. Detecting relationship between EPC and Dirac fermion through the Raman scattering will provide a direct route to investigate the exotic property in buckled two-dimensional honeycomb materials.

cond-mat.mtrl-sci↗

arXiv2014

Effects of Oxygen Adsorption on the Surface State of Epitaxial Silicene on Ag(111)

Epitaxial silicene, which is one single layer of silicon atoms packed in a honeycomb structure, demonstrates a strong interaction with the substrate that dramatically affects its electronic structure. The role of electronic coupling in the chemical reactivity between the silicene and the substrate is still unclear so far, which is of great importance for functionalization of silicene layers. Here, we report the reconstructions and hybridized electronic structures of epitaxial 4x4 silicene on Ag(111), which are revealed by scanning tunneling microscopy and angle-resolved photoemission spectroscopy. The hybridization between Si and Ag results in a metallic surface state, which can gradually decay due to oxygen adsorption. X-ray photoemission spectroscopy confirms the decoupling of Si-Ag bonds after oxygen treatment as well as the relatively oxygen resistance of Ag(111) surface, in contrast to 4x4 silicene [with respect to Ag(111)]. First-principles calculations have confirmed the evolution of the electronic structure of silicene during oxidation. It has been verified experimentally and theoretically that the high chemical activity of 4x4 silicene is attributable to the Si pz state, while the Ag(111) substrate exhibits relatively inert chemical behavior.

cond-mat.mes-hall↗

arXiv2014

Tuning the Band Gap in Silicene by Oxidation

Silicene monolayers grown on Ag(111) surfaces demonstrate a band gap that is tunable by oxygen adatoms from semimetallic to semiconducting type. By using low-temperature scanning tunneling microscopy, it is found that the adsorption configurations and amounts of oxygen adatoms on the silicene surface are critical for band-gap engineering, which is dominated by different buckled structures in R13xR13, 4x4, and 2R3x2R3 silicene layers. The Si-O-Si bonds are the most energy-favored species formed on R13xR13, 4x4, and 2R3x2R3 structures under oxidation, which is verified by in-situ Raman spectroscopy as well as first-principles calculations. The silicene monolayers retain their structures when fully covered by oxygen adatoms. Our work demonstrates the feasibility of tuning the band gap of silicene with oxygen adatoms, which, in turn, expands the base of available two-dimensional electronic materials for devices with properties that is hardly achieved with graphene oxide.

cond-mat.mtrl-sci↗

arXiv2014

Unabridged phase diagram for single-phased FeSexTe1-x thin films

A complete phase diagram and its corresponding physical properties are essential prerequisites to understand the underlying mechanism of iron based superconductivity. For the structurally simplest 11 (FeSeTe) system, earlier attempts using bulk samples have not been able to do so due to the fabrication difficulties. Here, thin FeSexTe1-x films with the Se content covering the full range were fabricated by using pulsed laser deposition method. Crystal structure analysis shows that all films retain the tetragonal structure in room temperature. Significantly, the highest superconducting transition temperature (TC = 20 K) occurs in the newly discovered domain, 0.6 - 0.8. The single-phased superconducting dome for the full Se doping range is the first of its kind in iron chalcogenide superconductors. Our results present a new avenue to explore novel physics as well as to optimize superconductors.

cond-mat.supr-con↗

arXiv2006

Alignment of Carbon Nanotube Additives for Improved Performance of Magnesium Diboride Superconductors

The rapid progress on MgB2 superconductor since its discovery[1] has made this material a strong competitor to low and high temperature superconductors (HTS) for applications with a great potential to catch the niche market such as in magnetic resonant imaging (MRI). Thanks to the lack of weak links and the two-gap superconductivity of MgB2 [2,3] a number of additives have been successfully used to enhance the critical current density, Jc and the upper critical field, Hc2.[4-12] Carbon nanotubes (CNTs) have unusually electrical, mechanical and thermal properties[13-16] and hence is an ideal component to fabricate composites for improving their performance. To take advantages of the extraordinary properties of CNTs it is important to align CNTs in the composites. Here we report a method of alignment of CNTs in the CNT/MgB2 superconductor composite wires through a readily scalable drawing technique. The aligned CNT doped MgB2 wires show an enhancement in magnetic Jc(H) by more than an order of magnitude in high magnetic fields, compared to the undoped ones. The CNTs have also significantly enhanced the heat transfer and dissipation. CNTs have been used mainly in structural materials, but here the advantage of their use in functional composites is shown and this has wider ramifications for other functional materials.

cond-mat.supr-con↗

arXiv2005

Off-axis MgB2 films using an in situ annealing pulsed laser deposition method

Highly smooth and c-axis oriented superconducting MgB2 thin films were prepared by pulsed laser deposition (PLD) with off-axis geometry. The films were deposited on Al2O3-C substrates perpendicularly aligned to a stoichiometric MgB2 target in a 120 mTorr high purity Ar background gas. An in situ annealing was carried out at 650C for 1 min in a 760 Torr Ar atmosphere. Despite the short annealing time, an x-ray theta-2 theta scan shows fairly good crystallization, according to the clear c-axis oriented peaks for the films. Both atomic force microscopy and the x-ray diffraction results indicate that the crystallite size is less than 50nm. The root mean square roughness of our off-axis film is ~4 nm in a 5x5 square micron area. The Tc onset value of the best off-axis film reaches 33.1 K with a narrow transition width of 0.9 K. The films showed no anisotropy in Hc2-T curves when parallel and perpendicular fields were applied. The slope of Hc2-T curves in low field regime is 1 T/K, which is among the highest reported values.

cond-mat.supr-con↗

arXiv2003

In situ annealing of superconducting MgB2 films prepared by pulsed laser deposition

The in situ annealing conditions of pulsed laser deposited MgB2 films were studied. The precursor films were deposited at 250 C from a stoichiometric MgB2 target in a 120mTorr Ar atmosphere. The films were then in situ annealed at a temperature from 450 C to 800 C and an annealing time from 1 minute to 10 minutes. We found that the superconducting properties depend in a crucial way on the annealing conditions: temperature, heating rate and time. The best film with a thickness of ~600nm was obtained under the following annealing conditions: Tanneal=680-690 C, tanneal=1 min, heating rate= 38 C/min. The Tc onset of the film is 28K with a transition width of ~10K. The hysteresis loop of magnetic moment of the film indicates weak field dependence in high fields. Magneto-optical imaging of the film showed quite homogeneous magnetic flux penetration, indicating structural homogeneity. The films without annealing showed no superconductivity.

cond-mat.supr-con↗

arXiv2003

Direct visualization of iron sheath shielding effect in MgB_2 superconducting wires

Local magneto-optical imaging and global magnetization measurement techniques were used in order to visualize shielding effects in the superconducting core of MgB_2 wires sheathed by ferromagnetic iron (Fe). The magnetic shielding can provide a Meissner-like state in the superconducting core in applied magnetic fields up to ~1T. The maximum shielding fields are shown to correlate with the saturation fields of magnetization in Fe-sheaths. The shielding has been found to facilitate the appearance of an overcritical state, which is capable of achieving a critical current density (J_c) in the core which is larger than J_c in the same wire without the sheath by a factor of ~2. Other effects caused by the magnetic interaction between the sheath and the superconducting core are discussed.

cond-mat.supr-con↗