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Shi-Hao Bi

Publications and source records attributed to Shi-Hao Bi.

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Suppression of Extrinsic Anomalous Hall Conductivity in Disordered Parity Anomalous Semimetal

We present an analytical investigation of the extrinsic contributions to the anomalous Hall conductivity in the context of the half-quantized Hall effect observed in disordered parity anomalous semimetal emerged from semi-magnetic topological insulator thin films. The gapless Dirac cone surface state, which embodies the quintessence of the half-quantized Hall effect, exhibits remarkable robustness against disorder scattering. Two primary extrinsic mechanisms, the side-jump and skew-scattering, are deemed irrelevant and make no contributions. These results establish the parity anomalous semimetal as a disorder-resilient quantum phase, thereby providing insights into Dirac fermion physics.

cond-mat.dis-nn

Nearly semi-elliptic relation between the minimal conductivity and Hall conductivity in unpaired Dirac fermions

Electric conductivities may reveal the topological and magnetic properties of band structures in solids, especially for two-dimensional unpaired Dirac fermions. In this work, we evaluate the longitudinal and Hall conductivity for unpaired Dirac fermions in the framework of the self-consistent Born approximation and find a nearly semi-elliptic relation between the minimal conductivity and Hall conductivities in the Dirac fermions. Near the charge neutrality point, disorder may drive a metal-insulator transition, and enhance the longitudinal conductivity. For the massless case, the minimal conductivity $σ_{xx}^*$ coexists with the half-quantized Hall conductivity $e^2/2h$, forming an indicator for the parity anomalous semimetal. The relation signals a disorder-induced metallic phase that bridges two topologically distinct insulating phases, and agrees with the recent experimental observation in magnetic topological insulators.

cond-mat.mes-hall

Disordered Parity Anomalous Semimetal

The parity anomalous semimetal is a topological state of matter characterized by its semi-metallic nature and a quantum Hall conductance of one-half $e^{2}/h$ ($e$ is the elementary charge and $h$ is the Planck constant). Here we investigate the topological phase transition driven by disorder in a semi-magnetic structure of topological insulator, and narrow-gap weak topological insulator film. We demonstrate that strong disorder not only leads to a topological transition from the parity anomalous semimetal to a diffusive metal with non-quantized anomalous Hall conductance, but also induces the topological phase in a trivial insulating phase. Our calculations of the local density of states provide clear picture for the formation of a single gapless Dirac fermion, which emerges as the disorder strength increases. The half quantized Hall effect is attributed to the existence of the gapless Dirac cone. Our findings of disorder-induced parity anomalous semimetal and diffusive metal significantly advance our understanding of the disorder-driven topological phase transition in magnetic topological insulators, opening up new avenues for further exploration in the field of quantum materials.

cond-mat.mes-hall

Half-Quantized Hall Metal and Marginal Metal in Disordered Magnetic Topological Insulators

A semimagnetic topological insulator -- a heterostructure combining a topological insulator with a ferromagnet -- exhibits a half-quantized Hall effect, characterized by a quantized Hall conductance of $\frac{1}{2}\frac{e^{2}}{h}$ (where $e$ is the elementary charge and $h$ is the Planck constant), which reinforces the established understanding of topological phenomena in condensed matter physics. However, its stability in realistic, disordered systems remains poorly understood. Here, we demonstrate the robustness of the half-quantized Hall effect in weakly disordered systems, stemming from a single gapless Dirac cone of fermions and coexisting with weak antilocalization due to the $π$ Berry phase that suppresses backscattering. Furthermore, we uncover a marginal metallic phase emerging between weak antilocalization and Anderson insulation -- a transition that defies conventional metal-insulator transitions by lacking an isolated critical point -- where both conductance and normalized localization length exhibit scale invariance, independent of system size. The half-quantized Hall metal and the marginal metallic phase challenge existing localization theories and provide insights into disorder-driven topological phase transitions in magnetic topological insulators, opening avenues for exploring quantum materials and next-generation electronic devices.

cond-mat.dis-nn