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Shiang-Bin Chiu

Publications and source records attributed to Shiang-Bin Chiu.

4 recordsLinked to original sources

I-V characteristics of SNS junctions with a multivalley normal region

In multivalley conductors the inter-valley relaxation time $τ_v$ and the inelastic relaxation time $τ_{in}$ may be significantly longer than the intra-valley momentum relaxation time $τ$. We show that this separation of time scales has dramatic effects on the I-V characteristics of SNS junctions with a multivalley normal region. We generalize the Larkin-Ovchinnikov equations describing superconducting kinetics to the case of multivalley superconductors. We use this generalization to obtain a kinetic description of multivalley SNS junctions. We find that at constant voltage bias $V$, the current $I(V)$ is nonmonotonic; it exhibits two peaks of similar magnitude $I_\text{max,1} \sim I_\text{max,2}$ at $V_1 \sim \hbar(eτ_{in})^{-1}$ and $V_2\sim \hbar(eτ_v)^{-1}$, which may greatly exceed the critical current $I_c(T)$. At constant current bias $I$ we find that in a wide interval, $I_c(T) < I \lesssim I_{\text{jump}}$, the nonlinear resistance of the junction is controlled by the long relaxation times and may be several orders of magnitude smaller than the normal state resistance.

cond-mat.supr-con

Low-temperature dissipative conductivity of superconductors with paramagnetic impurities

In s-wave superconductors with a small concentration of magnetic impurities, the only electronic excitations that remain available at low temperatures are the excitations of the system of localized spins. We discuss a new mechanism of interaction between electromagnetic waves and the localized spins in disordered superconductors. A supercurrent induces randomly distributed spin density of the itinerant electrons, which couples to the impurity spins by exchange interaction. Acceleration of the Cooper pair condensate by the external AC electric field of frequency $ω$ creates a strong, time-dependent exchange field acting on the localized spins, which is inversely proportional to $ω$. As a result, the low-frequency dissipative part of the conductivity saturates to a nonzero value. We use the fluctuation-dissipation theorem to evaluate the spectrum of equilibrium current fluctuations associated with the fluctuation in the spin subsystem. We also predict that in the presence of a DC magnetic field parallel to the superconducting film, the system of spins exhibits a large positive magnetoconductance.

cond-mat.supr-con

Direct Visualization of a Disorder Driven Electronic Smectic Phase in Nonsymmorphic Square-Net Semimetal GdSbTe

Electronic liquid crystal (ELC) phases are spontaneous symmetry breaking states believed to arise from strong electron correlation in quantum materials such as cuprates and iron pnictides. Here, we report a direct observation of a smectic phase in a weakly correlated nonsymmorphic square-net semimetal GdSbxTe2-x. Incommensurate smectic charge modulation and intense local unidirectional nanostructure, which coexist with Dirac fermions across Fermi level, are visualized by using spectroscopic imaging - scanning tunneling microscopy. As materials with highly mobile carriers are mostly weakly correlated, the discovery of such an ELC phase are anomalous and raise questions on the origin of their emergence. Specifically, we demonstrate how chemical substitution generates these symmetry breaking phases before the system undergoes a charge density wave (CDW) - orthorhombic structural transition. Our results highlight the importance of impurities in realizing ELC phases and present a new material platform for exploring the interplay among quenched disorder, Dirac fermions and electron correlation.

cond-mat.str-el

Manipulating electron waves in graphene using carbon nanotube gating

Graphene with its dispersion relation resembling that of photons offers ample opportunities for applications in electron optics. The spacial variation of carrier density by external gates can be used to create electron waveguides, in analogy to optical fiber, with additional confinement of the carriers in bipolar junctions leading to the formation of few transverse guiding modes. We show that waveguides created by gating graphene with carbon nanotubes (CNTs) allow obtaining sharp conductance plateaus, and propose applications in the Aharonov-Bohm and two-path interferometers, and a pointlike source for injection of carriers in graphene. Other applications can be extended to Bernal-stacked or twisted bilayer graphene or two-dimensional electron gas. Thanks to their versatility, CNT-induced waveguides open various possibilities for electron manipulation in graphene-based devices.

cond-mat.mes-hall