arXiv subjects

Shigeru Tsukamoto

Publications and source records attributed to Shigeru Tsukamoto.

13 recordsLinked to original sources

arXiv2021

Single-crystal graphene on Ir(110)

A single-crystal sheet of graphene is synthesized on the low-symmetry substrate Ir(110) by thermal decomposition of C$_2$H$_4$ at 1500 K. Using scanning tunneling microscopy, low-energy electron diffraction, angle-resolved photoemission spectroscopy, and ab initio density functional theory the structure and electronic properties of the adsorbed graphene sheet and its moiré with the substrate are uncovered. The adsorbed graphene layer forms a wave pattern of nm wave length with a corresponding modulation of its electronic properties. This wave pattern is demonstrated to enable the templated adsorption of aromatic molecules and the uniaxial growth of organometallic wires. Not limited to this, graphene on Ir(110) is also a versatile substrate for 2D-layer growth and makes it possible to grow epitaxial layers on ureconstructed Ir(110).

cond-mat.mtrl-sci↗

arXiv2020

Efficient calculation of the Green's function in scattering region for electron-transport simulations

We propose a first-principles method of efficiently evaluating electron-transport properties of very long systems. Implementing the recursive Green's function method and the shifted conjugate gradient method in the transport simulator based on real-space finite-difference formalism, we can suppress the increase in the computational cost, which is generally proportional to the cube of the system length to a linear order. This enables us to perform the transport calculations of double-walled carbon nanotubes~(DWCNTs) with 196,608 atoms. We find that the conductance spectra exhibit different properties depending on the periodicity of doped impurities in DWCNTs and they differ from the properties for systems with less than 1,000 atoms.

cond-mat.mes-hall↗

arXiv2019

Analytical PAW Projector Functions for Reduced Bandwidth Requirements

Large scale electronic structure calculations require modern high performance computing (HPC) resources and, as important, mature HPC applications that can make efficient use of those. Real-space grid-based applications of Density Functional Theory (DFT) using the Projector Augmented Wave method (PAW) can give the same accuracy as DFT codes relying on a plane wave basis set but exhibit an improved scalability on distributed memory machines. The projection operations of the PAW Hamiltonian are known to be the performance critical part due to their limitation by the available memory bandwidth. We investigate on the utility of a 3D factorizable basis of Hermite functions for the localized PAW projector functions which allows to reduce the bandwidth requirements for the grid representation of the projector functions in projection operations. Additional on-the-fly sampling of the 1D basis functions eliminates the memory transfer almost entirely. For an quantitative assessment of the expected memory bandwidth savings we show performance results of a first implementation on GPUs. Finally, we suggest a PAW generation scheme adjusted to the analytically given projector functions.

physics.comp-ph↗

arXiv2018

Contour integral method for obtaining the self-energy matrices of electrodes in electron transport calculations

We propose an efficient computational method for evaluating the self-energy matrices of electrodes to study ballistic electron transport properties in nanoscale systems. To reduce the high computational cost incurred in large systems, a contour integral eigensolver based on the Sakurai-Sugiura method combined with the shifted biconjugate gradient method is developed to solve exponential-type eigenvalue problem for complex wave vectors. A remarkable feature of the proposed algorithm is that the numerical procedure is very similar to that of conventional band structure calculations. We implement the developed method in the framework of the real-space higher-order finite difference scheme with nonlocal pseudopotentials. Numerical tests for a wide variety of materials validate the robustness, accuracy, and efficiency of the proposed method. As an illustration of the method, we present the electron transport property of the free-standing silicene with the line defect originating from the reversed buckled phases.

cond-mat.mtrl-sci↗

arXiv2017

Improvement of accuracy of wave-function-matching method for transport calculation

The wave-function-matching (WFM) technique for first-principles transport-property calculations was modified by Sørensen {\it et al.} so as to exclude rapidly decreasing evanescent waves [Sørensen {\it et al.}, Phys. Rev. B {\bf 77}, 155301 (2008)]. However, this method lacks translational invariance of the transmission probability with respect to insertion of matching planes and consistency between the sum of the transmission and reflection probabilities and the number of channels in the transition region. We reformulate the WFM method since the original methods are formulated to include all the generalized Bloch waves. It is found that the translational invariance is destroyed by the overlap of the layers between the electrode and transition regions and by the pseudoinverses used to exclude the rapidly decreasing evanescent waves. We then devise a method that removes the overlap and calculates the transmission probability without the pseudoinverses. As a result, we find that the translational invariance of the transmission probability with respect to insertion of the extra layers is properly retained and the sum of the transmission and reflection probabilities exactly agrees with the number of channels. In addition, we prove that the accuracy in the transmission probability of this WFM technique is comparable with that obtained by the nonequilibrium Green's function method. Furthermore, we carry out the electron transport calculations on two-dimensional graphene sheets embedded with B--N line defects sandwiched between a pair of semi-infinite graphene electrodes and find the dependence of the electron transmission on the transverse momentum perpendicular to the direction of transport.

cond-mat.mes-hall↗

arXiv2016

First-principles calculation method and its applications for two-dimensional materials

We present details of our effective computational methods based on the real-space finite-difference formalism to elucidate electronic and magnetic properties of the two-dimensional (2D) materials within the framework of the density functional theory. The real-space finite-difference formalism enables us to treat truly 2D computational models by imposing individual boundary condition on each direction. The formulae for practical computations under the boundary conditions specific to the 2D materials are derived and the electronic band structures of 2D materials are demonstrated using the proposed method. Additionally, we introduce other first-principles works on the MoS2 monolayer focusing on the modulation of electronic and magnetic properties originating from lattice defects.

cond-mat.mes-hall↗

arXiv2015

Real-space method for first-principles electron-transport calculations: self-energy terms of electrodes for large systems

We present a fast and stable numerical technique to obtain the self-energy terms of electrodes for first-principles electron-transport calculations. Although first-principles calculations based on the real-space finite-difference method are advantageous for execution on massively parallel computers, large-scale transport calculations are hampered by the computational cost and numerical instability of the computation of the self-energy terms. Using the orthogonal complement vectors of the space spanned by the generalized Bloch waves that actually contribute to transport phenomena, the computational accuracy of transport properties is significantly improved with a moderate computational cost. To demonstrate the efficiency of the present technique, the electron-transport properties of a Stone-Wales (SW) defect in graphene and silicene are examined. The resonance scattering of the SW defect is observed in the conductance spectrum of silicene since the $σ^\ast$ state of silicene lies near the Fermi energy. In addition, we found that one conduction channel is sensitive to a defect near the Fermi energy, while the other channel is hardly affected. This characteristic behavior of the conduction channels is interpreted in terms of the bonding network between the bilattices of the honeycomb structure in the formation of the SW defect. The present technique enables us to distinguish the different behaviors of the two conduction channels in graphene and silicene owing to its excellent accuracy.

cond-mat.mes-hall↗

arXiv2015

First-principles calculation method for electron transport based on grid Lippmann-Schwinger equation

We develop a first-principles electron-transport simulator based on the Lippmann--Schwinger (LS) equation within the framework of the real-space finite-difference scheme. In our fully real-space based LS (grid LS) method, the ratio expression technique for the scattering wave functions and the Green's function elements of the reference system is employed to avoid numerical collapse. Furthermore, we present analytical expressions and/or prominent calculation procedures for the retarded Green's function, which are utilized in the grid LS approach. In order to demonstrate the performance of the grid LS method, we simulate the electron-transport properties of the semiconductor/oxide interfaces sandwiched between semi-infinite metal electrodes. The results confirm that the leakage current through the (001)Si/SiO$_2$ model becomes much larger when the dangling-bond (DB) state is induced by a defect in the oxygen layer while that through the (001)Ge/GeO$_2$ model is insensitive to the DB state.

cond-mat.mes-hall↗

arXiv2011

First-principles study on atomic configuration of electron-beam irradiated C$_{60}$ clusters

A theoretical study proposes the atomic configuration of electron-beam irradiated C$_{60}$ thin films. We examined the electronic structure and electron-transport properties of the C$_{60}$ clusters using density-functional calculations and found that a rhombohedral C$_{60}$ polymer with $sp^3$-bonded dumbbell-shaped connections at the molecule junction is a semiconductor with a narrow band gap while the polymer changes to exhibit metallic behavior by forming $sp^2$-bonded peanut-shaped connections. Conductance below the Fermi level increases and the peak of the conductance spectrum arising from the $t_{u1}$ states of a C$_{60}$ molecule becomes obscure after the connections are rearranged. The present rohmbohedral film, including the [2+2] four-membered rings and peanut-shaped connections, is a candidate to represent the structure of the metallic C$_{60}$ polymer at the initial stage of electron-beam irradiation.

cond-mat.mtrl-sci↗

arXiv2010

Real-space electronic-structure calculations with full-potential all-electron precision for transition-metals

We have developed an efficient computational scheme utilizing the real-space finite-difference formalism and the projector augmented-wave (PAW) method to perform precise first-principles electronic-structure simulations based on the density functional theory for systems containing transition metals with a modest computational effort. By combining the advantages of the time-saving double-grid technique and the Fourier filtering procedure for the projectors of pseudopotentials, we can overcome the egg box effect in the computations even for first-row elements and transition metals, which is a problem of the real-space finite-difference formalism. In order to demonstrate the potential power in terms of precision and applicability of the present scheme, we have carried out simulations to examine several bulk properties and structural energy differences between different bulk phases of transition metals, and have obtained excellent agreement with the results of other precise first-principles methods such as a plane wave based PAW method and an all-electron full-potential linearized augmented plane wave (FLAPW) method.

cond-mat.mtrl-sci↗

arXiv2003

Magnetic orderings in Al nanowires suspended between electrodes

A theoretical analysis of a relation between atomic and spin-electronic structures for the ground state of single-row aluminum nanowires suspended between Al(001) electrodes is demonstrated using first-principles molecular-dynamics simulations. We obtain a unusual result that a 3-aluminum-atom nanowire sandwiched between the electrodes does not manifest magnetic ordering although an isolated aluminum trimer molecule in a straight line is spin-polarized. On the other hand, a 5-atom nanowire exhibits ferromagnetic ordering, where three central atoms form a spin-polarized trimer. Moreover, in the case of an 8-atom nanowire, the middle atoms in the nanowire form two spin-polarized trimers with antiferromagnetic ordering.

cond-mat↗

arXiv2002

Sudden Suppression of Electron-Transmission Peaks in Finite-Biased Nanowires

Negative differential conductance (NDC) is expected to be an essential property to realize fast switching in future electronic devices. We here present a thorough analysis on electron transportability of a simple atomic-scale model consisting of square prisms, and clarify the detailed mechanism of the occurrence of NDC phenomenon in terms of the changes of local density of states upon applying bias voltages to the electrodes. Boosting up bias voltages, we observe sudden suppression of transmission peaks which results in NDC behavior in the current-voltage characteristic. This suppression is explained by the fact that when the bias voltage exceeds a certain threshold, the conduction channels contributing to the current flow are suddenly closed up to deny the electron transportation.

cond-mat.mtrl-sci↗

arXiv2002

Electron-Transport Properties of Na Nanowires under Applied Bias Voltages

We present first-principles calculations on electron transport through Na nanowires at finite bias voltages. The nanowire exhibits a nonlinear current-voltage characteristic and negative differential conductance. The latter is explained by the drastic suppression of the transmission peaks which is attributed to the electron transportability of the negatively biased plinth attached to the end of the nanowire. In addition, the finding that a voltage drop preferentially occurs on the negatively biased side of the nanowire is discussed in relation to the electronic structure and conduction.

cond-mat.mtrl-sci↗