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Shilpi Singh

Publications and source records attributed to Shilpi Singh.

4 recordsLinked to original sources

InAs-Al Hybrid Devices Passing the Topological Gap Protocol

We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin et al. [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at both ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-60 $\mu$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes.

cond-mat.mes-hall

Extreme reductions of entropy in an electronic double dot

We experimentally study negative fluctuations of stochastic entropy production in an electronic double dot operating in nonequilibrium steady-state conditions. We record millions of random electron tunneling events at different bias points, thus collecting extensive statistics. We show that for all bias voltages the experimental average values of the minima of stochastic entropy production lie above $-k_B$, where $k_B$ is the Boltzmann constant, in agreement with recent theoretical predictions for nonequilibrium steady states. Furthermore, we also demonstrate that the experimental cumulative distribution of the entropy production minima is bounded, at all times and for all bias voltages, by a universal expression predicted by the theory. We also extend our theory by deriving a general bound for the average value of the maximum heat absorbed by a mesoscopic system from the environment and compare this result with experimental data. Finally, we show by numerical simulations that these results are not necessarily valid under non-stationary conditions.

cond-mat.stat-mech

Universal First-Passage-Time Distribution of Non-Gaussian Currents

We investigate the fluctuations of the time elapsed until the electric charge transferred through a conductor reaches a given threshold value. For this purpose, we measure the distribution of the first-passage times for the net number of electrons transferred between two metallic islands in the Coulomb blockade regime. Our experimental results are in excellent agreement with numerical calculations based on a recent theory describing the exact first-passage-time distributions for any non-equilibrium stationary Markov process. We also derive a simple analytical approximation for the first-passage-time distribution, which takes into account the non-Gaussian statistics of the electron transport, and show that it describes the experimental distributions with high accuracy. This universal approximation describes a wide class of stochastic processes and can be used beyond the context of mesoscopic charge transport. In addition, we verify experimentally a fluctuation relation between the first-passage-time distributions for positive and negative thresholds.

cond-mat.stat-mech

Determining the parameters of a random telegraph signal by digital low pass filtering

We propose a method to determine the switching rates of a random telegraph signal. We apply digital low pass filtering with varying bandwidth to the raw signal, evaluate the cumulants of the resulting distributions and compare them with the analytical prediction. This technique is useful in case of a slow detector with response time comparable to the time interval between the switching events. We demonstrate the efficiency of this method by analyzing random telegraph signals generated by individual charge tunneling events in metallic single-electron transistors.

cond-mat.mes-hall