arXiv subjects

Shimpei Nishiyama

Publications and source records attributed to Shimpei Nishiyama.

3 recordsLinked to original sources

arXiv2026

Interplay of Electric Dipole Spin Resonance and Multilevel Landau-Zener Interference in p-Type Silicon Quantum Dots

In this work, we examine microwave responses of the Pauli spin blockade (PSB) leakage current through a p-type silicon double quantum dot. We observe more than the expected two resonance lines with the main resonance line exhibits both positive and negative peaks as a function of the magnetic field, corresponding to enhancement and suppression of the PSB leakage current, respectively. We attribute the observed spectra to the interplay between two spin rotation mechanisms: spin-orbit-mediated electric dipole spin resonance (EDSR) and multilevel Landau-Zener (MLLZ) interference, both of which are present in electrically driven devices with strong spin-orbit coupling (and enhanced in the vicinity of orbital level crossings). A numerical simulation taking into account both mechanisms show agreement with the experimental results. While these unconventional spectral behaviours can be readily suppressed away from the orbital level crossing or in devices with weak spin-orbit coupling, our study showcases the potential complexity of spin-rotating mechanisms for electrically driven spin qubits.

cond-mat.mes-hall↗

arXiv2021

4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot

We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2\,K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi-qubit platforms.

cond-mat.mes-hall↗

arXiv2021

RF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot

We have embedded a physically defined p-channel silicon MOS quantum dot (QD) device into an impedance transformer RC circuit. To decrease the parasitic capacitance and surpass the cutoff frequency of the device which emerges in MOS devices that have a top gate and act as RC low-pass filter, we fabricate a new device to reduce the device's top gate area from 400 $\mbox{$μ$m}^2$ to 0.09 $\mbox{$μ$m}^2$. Having a smaller top gate eliminates the cutoff frequency problem preventing the RF signal from reaching QD. We show that we have fabricated a single QD properly, which is essential for RF single-electron transistor technique. We also analyze and improve the impedance matching condition and show that it is possible to perform readout of charge transition at 4.2 K by RF reflectometry, which will get us to fast readout of charge and spin states.

cond-mat.mes-hall↗