arXiv subjects

Shinji Miwa

Publications and source records attributed to Shinji Miwa.

At least 19 recordsLinked to original sources

arXiv2026

Current-control of chaos and effects of thermal fluctuations in magnetic tunnel junctions

We theoretically investigate the chaotic behavior of spin-torque ferromagnetic resonance in magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy under thermal fluctuations. By calculating the Lyapunov exponent based on the Landau-Lifshitz-Gilbert equation, we demonstrate that an MTJ characterized by a double-well potential, composed of uniaxial magnetic anisotropy and an external magnetic field, exhibits chaotic magnetization dynamics that can be controlled by means of the DC current bias. Furthermore, we find that thermal fluctuations help to induce these chaotic magnetization dynamics, which can be regarded as noise-induced chaos. This research provides a basis for brain-inspired computing using spintronic devices and advances the understanding of the interplay between thermal fluctuations and chaos in magnetization dynamics.

cond-mat.mes-hall↗

arXiv2025

Signature of inverse orbital Hall effect in silicon studied using time-resolved terahertz polarimetry

We investigated the anomalous Hall conductivity induced in silicon by circularly polarized light at room temperature using near-infrared (NIR) pump-terahertz (THz) probe spectroscopy. The time-resolved detection scheme eliminates the large nonlinear current generated by the field-induced circular photogalvanic effect, allowing exclusive observation of a long-lived anomalous Hall conductivity of photocarriers that depends on the helicity of NIR light. The magnitude of this conductivity is comparable to that of GaAs despite silicon's much weaker spin-orbit coupling, and its robustness against NIR photon energy rules out a spin-polarization-based origin, which occurs only in the vicinity of the bandgap. These results suggest the emergence of the inverse orbital Hall effect, paving the way for silicon-based orbitronics.

cond-mat.mes-hall↗

arXiv2025

Crossover between intrinsic and temperature-assisted regimes in spin-orbit torque switching of antiferromagnetic order

Intensive studies have been made on antiferromagnets as candidate materials for next generation memory bits due to their ultrafast dynamics reaching picosecond time scales. Recent demonstrations of electrical bidirectional switching of antiferromagnetic states have attracted significant attention. However, under the presence of significant Joule heating that destabilizes the magnetic order, the timescales associated with the switching can be limited to nanoseconds or longer. Here, we present the observation of a crossover in the switching behavior of the chiral antiferromagnet Mn3Sn by tuning the magnetic layer thickness. While Joule heating interferes with switching in thicker devices, we find clear signatures of an intrinsic spin-orbit torque mechanism as the thickness is reduced, avoiding the heating effect. The suppression of heating enables switching without significant attenuation of the readout signal using pulses shorter than those required by temperature-assisted mechanisms. The crossover into the spin-orbit torque switching behavior clarifies the potential for achieving ultrafast switching as expected from the picosecond spin dynamics of antiferromagnets. Our results lay the groundwork for designing antiferromagnetic memory devices that can operate at ultrafast timescales.

cond-mat.mtrl-sci↗

arXiv2025

Magnetic resonance and microwave resistance modulation in van der Waals colossal-magnetoresistance material

Colossal magnetoresistance (CMR) is a fascinating quantum phenomenon that continues to draw significant interest in condensed matter physics. Mn3Si2Te6 has emerged as a prototypical CMR material, notable for its puzzling magnetoresistance behavior and pronounced directional anisotropy. Despite extensive research, the mechanisms driving CMR in Mn3Si2Te6 remain elusive [1-4]. In this work, we explore the magnetic resonance of Mn3Si2Te6 and observe a reduced g-factor for magnetic fields applied along the crystalline c-axis compared to the ab-plane, indicating a substantial orbital magnetization contribution along the c-axis. Furthermore, we detect resistance modulation under resonance conditions, suggesting that CMR in Mn3Si2Te6 is sensitive to the out-of-the plane spin polarization. These findings shed new light on the role of orbital magnetic moment in Mn3Si2Te6, offering a deeper understanding of the interplay between spin, orbital and lattice degrees of freedom of electrons in this system.

cond-mat.mtrl-sci↗

arXiv2025

Nonlocal Electrical Detection of Reciprocal Orbital Edelstein Effect

Spin-Orbitronics leverages the spin and orbital degrees of freedom in solids for information processing. The orbital Edelstein effect and orbital Hall effect, where the charge current induces a nonequilibrium orbital angular momentum, offer a promising method to manipulate nanomagnets efficiently using light elements. Despite extensive research, understanding the Onsager reciprocity of orbital transport, fundamentally rooted in the second law of thermodynamics and time-reversal symmetry, remains elusive. In this study, we experimentally demonstrate the Onsager reciprocity of orbital transport in an orbital Edelstein system by utilizing nonlocal measurements. This method enables the precise identification of the chemical potential generated by orbital accumulation, avoiding the limitations associated with local measurements. Remarkably, we observe that the direct and inverse orbital-charge conversion processes produce identical electric voltages, confirming Onsager reciprocity in orbital transport. Additionally, we find that the orbital decay length, approximately 100 nm at room temperature, is independent of Cu thickness and decreases with lowering temperature, revealing a distinct contrast to spin transport behavior. Our findings provide valuable insights into both the reciprocity of the charge-orbital interconversion and the nonlocal correlation of orbital degree of freedom, laying the ground for orbitronics devices with long-range interconnections.

cond-mat.mes-hall↗

arXiv2024

Spin polarization driven by molecular vibrations leads to enantioselectivity in chiral molecules

Chirality pervades multiple scientific domains-physics, chemistry, biology, and astronomy-and profoundly influences their foundational principles. Recently, the chirality-induced spin selectivity (CISS) phenomenon has captured significant attention in physical chemistry due to its potential applications and intriguing underlying physics. Despite its prominence, the microscopic mechanisms of CISS remain hotly debated, hindering practical applications and further theoretical advancements. Here we challenge the established view that attributes CISS-related phenomena to current-induced spin polarization and electron transport across interfaces. We propose that molecular vibrations in chiral molecules primarily drive spin polarization, thereby governing CISS. Employing an electrochemical cell paired with a precisely engineered magnetic multilayer, we demonstrate that the magnetic interactions akin to interlayer exchange coupling are crucial for CISS. Our theoretical study suggests that molecular vibrations facilitate chirality-dependent spin polarization, which plays a pivotal role in CISS-related phenomena such as magnetoresistance and enantiomer separation using ferromagnets. These findings necessitate a paradigm shift in the design and analysis of systems in various scientific fields, extending the role of spin dynamics from traditional areas such as solid-state physics to chemical reactions, molecular biology, and even drug discovery.

cond-mat.mtrl-sci↗

arXiv2024

Observation of chiral domain walls in an octupole-ordered antiferromagnet

Spin chirality in antiferromagnets offers new opportunities for spintronics. The kagome antiferromagnet Mn3Sn is a paradigmatic material in which the antiferromagnetic order parameter can be detected and controlled by electrical means. However, direct investigation of the magnetic texture of Mn3Sn has been challenging because of the tiny moment hosted in its magnetic octupole, hindering further clarification of this unique material. Here, we address this issue by observing the stray magnetic field from Mn3Sn using a diamond quantum scanning magnetometer. The spatially-resolved intrinsic domains and domain walls in a high-quality single-crystalline Mn3Sn film quantitatively reveal the polarization angle of the magnetic octupole in the kagome plane, the domain's local magnetization, the domain wall's width and chirality, and the octupole order in domain walls. Our nanoscale investigation of Mn3Sn, a powerful complement to macroscopic measurements, paves the road for developing chiral antiferromagnetism and its potential for spintronic applications.

cond-mat.mtrl-sci↗

arXiv2023

Spontaneous spin selectivity in chiral molecules at the interface

Chirality-induced spin selectivity (CISS) has been extensively studied over the past two decades. While current-induced spin polarization in chiral molecules is widely recognized as the fundamental principle of the CISS, only a few studies have been reported on bias-current-free CISS, where there is no bias electric current in chiral molecules. Recent studies on the chirality-induced exchange bias and current-in-plane magnetoresistance (CIP-MR) effects using chiral molecule/ferromagnet bilayer systems indicate that chiral molecules at the interface possess thermally driven broken-time-reversal symmetry, which induces bias-current-free CISS, i.e. a spontaneous effective magnetic field in the system. In this paper, we briefly review CISS-related phenomena in terms of the symmetry and discuss the mechanism of bias-current-free CISS. We also discuss the possibility of the linear magnetoelectric effect of chiral molecules, which arises from the spin polarization at the edges of molecules with metallic contacts, and its potential impact on the observed CISS phenomena.

cond-mat.mtrl-sci↗

arXiv2022

The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface

The Fe/MgO interface is an essential ingredient in spintronics as it shows giant tunneling magnetoresistance and strong perpendicular magnetic anisotropy (PMA). A recent study demonstrated that the insertion of an ultra-thin LiF layer between the Fe and MgO layers enhances PMA significantly. In this study, we perform x-ray magnetic circular dichroism measurements on Fe/LiF/MgO multilayers to reveal the origin of the PMA enhancement. We find that the LiF insertion increases the orbital-magnetic-moment anisotropy and thus the magnetic anisotropy energy. We attribute the origin of this orbital-magnetic-moment-anisotropy enhancement to the stronger electron localization and electron-electron correlation or the better interface quality with fewer defects.

cond-mat.mtrl-sci↗

arXiv2022

Observation of gigantic spin conversion anisotropy in bismuth

Whilst the g-factor can be anisotropic due to the spin-orbit interaction (SOI), its existence in solids cannot be simply asserted from a band structure, which hinders progress on studies from such the viewpoints. The g-factor in bismuth (Bi) is largely anisotropic; especially for holes at T-point, the g-factor perpendicular to the trigonal axis is negligibly small (< 0.112), whereas the g-factor along the trigonal axis is very large (62.7). We clarified in this work that the large g- factor anisotropy gives rise to the gigantic spin conversion anisotropy in Bi from experimental and theoretical approaches. Spin-torque ferromagnetic resonance was applied to estimate the spin conversion efficiency in rhombohedral (110) Bi to be 17%, which is unlike the negligibly small efficiency in Bi(111). Harmonic Hall measurements supports the large spin conversion efficiency in Bi(110). This is the first observation of gigantic spin conversion anisotropy as the clear manifestation of the g-factor anisotropy. Beyond the emblematic case of Bi, our study unveiled the significance of the g-factor anisotropy in condensed-matter physics and can pave a pathway toward establishing novel spin physics under g-factor control.

cond-mat.mtrl-sci↗

arXiv2021

Current-in-plane magnetoresistance in chiral-molecule/ferromagnetic metal bilayer due to thermally induced spin polarization

We report chirality-induced current-in-plane magnetoresistance (CIP-MR) in chiral molecule/ferromagnetic metal bilayer at room temperature. The previously reported chiralityinduced current-perpendicular-to-plane magnetoresistance (CPP-MR) originates from the chiral induced spin-selectivity (CISS) effect that needs charge-current passing through the molecule. In contrast, the observed CIP-MR in the present study requires no bias charge current through the molecule. The temperature dependence of CIP-MR suggests thermally induced spin-polarization in the chiral molecules is the key for the observed MR.

cond-mat.mtrl-sci↗

arXiv2021

Observation of spontaneous x-ray magnetic circular dichroism in a chiral antiferromagnet

X-ray magnetic circular dichroism (XMCD) signals are usually absent in antiferromagnets. In this letter, we report the observation of spontaneous XMCD spectra originating from the inverse triangular spin structure, or the polarization of the cluster magnetic octupole, in the chiral antiferromagnet Mn$_{3}$Sn thin film. The result is consistent with the recent theoretical predictions that the inverse triangular spin structure can give rise to finite XMCD signals in the absence of net magnetization [J. Phys. Soc. Jpn. 89, 083703 (2020) and Phys. Rev. Lett. 126, 157402 (2021)].

cond-mat.mtrl-sci↗

arXiv2021

Giant effective damping of octupole oscillation in an antiferromagnetic Weyl semimetal

A magnetic Weyl semimetal is a recent focus of extensive research as it may exhibit large and robust transport phenomena associated with topologically protected Weyl points in momentum space. Since a magnetic texture provides a handle for the configuration of the Weyl points and its transport response, understanding of magnetic dynamics should form a basis of future control of a topological magnet. Mn3Sn is an example of an antiferromagnetic Weyl semimetal that exhibits a large response comparable to the one observed in ferromagnets despite a vanishingly small magnetization. The non-collinear spin order in Mn3Sn can be viewed as a ferroic order of cluster magnetic octupole and breaks the time-reversal symmetry, stabilizing Weyl points and the significantly enhanced Berry curvature near the Fermi energy. Here we report our first observation of time-resolved octupole oscillation in Mn3Sn. In particular, we find the giant effective damping of the octupole dynamics, and it is feasible to conduct an ultrafast switching at < 10 ps, a hundred times faster than the case of spin-magnetization in a ferromagnet. Moreover, high domain wall velocity over 10 km/s is theoretically predicted. Our work paves the path towards realizing ultrafast electronic devices using the topological antiferromagnet.

cond-mat.mtrl-sci↗

arXiv2021

Chirality-induced effective magnetic field in a phthalocyanine molecule

Chirality in organic molecules has attracted considerable attention in the fields of chemistry, biology, and spintronics. This paper reports on perpendicular magnetization hysteresis loops of a multilayer consisting of ultrathin Fe (001), chiral phthalocyanine molecule ((P)- or (M)-PbPc-DTBPh), and MgO (001). We find a chirality-dependent shift of the hysteresis loop. Unlike the previously reported bias current induced phenomena, the result shows a chirality-induced effective magnetic field in the phthalocyanine molecule in the absence of a bias current in the system. This study opens up a new direction in the emerging field of chiral molecular spintronics.

cond-mat.mtrl-sci↗

arXiv2020

Control of spin-orbit torques by interface engineering in topological insulator heterostructures

(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized states and the strong material intermixing at the TI/FM interface are essentially unexplored. By combining interface chemical analysis and spin-transfer ferromagnetic resonance (ST-FMR) measurements, we demonstrate that intermixing plays a critical role in the generation of SOTs. By inserting a suitable normal metal spacer, material intermixing is reduced and the TI properties at the interface are largely improved, resulting in strong variations in the nature of the SOTs. A dramatic enhancement of a field-like torque, opposing and surpassing the Oersted-field torque, is observed, which can be attributed to the non-equilibrium spin density in Rashba-split surface bands and to the suppression of spin memory loss.

cond-mat.mes-hall↗

arXiv2020

Electrical Manipulation of a Topological Antiferromagnetic State

Electrical manipulation of emergent phenomena due to nontrivial band topology is a key to realize next-generation technology using topological protection. A Weyl semimetal is a three-dimensional gapless system that hosts Weyl fermions as low-energy quasiparticles. It exhibits various exotic phenomena such as large anomalous Hall effect (AHE) and chiral anomaly, which have robust properties due to the topologically protected Weyl nodes. To manipulate such phenomena, the magnetic version of Weyl semimetals would be useful as a magnetic texture may provide a handle for controlling the locations of Weyl nodes in the Brillouin zone. Moreover, given the prospects of antiferromagnetic (AF) spintronics for realizing high-density devices with ultrafast operation, it would be ideal if one could electrically manipulate an AF Weyl metal. However, no report has appeared on the electrical manipulation of a Weyl metal. Here we demonstrate the electrical switching of a topological AF state and its detection by AHE at room temperature. In particular, we employ a polycrystalline thin film of the AF Weyl metal Mn$_3$Sn, which exhibits zero-field AHE. Using the bilayer device of Mn$_3$Sn and nonmagnetic metals (NMs), we find that an electrical current density of $\sim 10^{10}$-$10^{11}$ A/m$^2$ in NMs induces the magnetic switching with a large change in Hall voltage, and besides, the current polarity along a bias field and the sign of the spin Hall angle $θ_{\rm SH}$ of NMs [Pt ($θ_{\rm SH} > 0$), Cu($θ_{\rm SH} \sim 0$), W ($θ_{\rm SH} < 0$)] determines the sign of the Hall voltage. Notably, the electrical switching in the antiferromagnet is made using the same protocol as the one used for ferromagnetic metals. Our observation may well lead to another leap in science and technology for topological magnetism and AF spintronics.

cond-mat.mtrl-sci↗

arXiv2019

Investigation of gating effect in Si spin MOSFET

A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant electric current. An unprecedented reduction in the spin accumulation voltages in a Si spin MOSFET under negative gate voltage applications is observed in a high electric bias current regime. To support our claim, the electric bias current dependence of the spin accumulation voltage under the gate voltage applications is investigated in detail and compared to a spin drift diffusion model including the conductance mismatch effect. We proved that the drastic decrease of the mobility and spin lifetime in the Si channel is due to the optical phonon emission at the high electric bias current, which consequently reduced the spin accumulation voltage.

physics.app-ph↗

arXiv2019

Reservoir computing with dipole-coupled nanomagnets

The feasibility of reservoir computing based on dipole-coupled nanomagnets is demonstrated using micro-magnetic simulations. The reservoir consists of an 2x10 array of nanomagnets. The static-magnetization directions of the nanomagnets are used as reservoir states. To update these states, we change the magnetization of one nanomagnet according to a single-bit-sequential signal. We also change the uniaxial anisotropy of the other nanomagnets using a voltage-induced magnetic-anisotropy change to enhance information flow, storage, and linear/nonlinear calculations. Binary tasks with AND, OR, and XOR operations were performed to evaluate the performance of the magnetic-array reservoir. The reservoir-computing output matrix was found to be trainable to perform AND, OR, and XOR operations with an input delay of up to three bits.

cs.ET↗