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Shinya Kasai

Publications and source records attributed to Shinya Kasai.

At least 19 recordsLinked to original sources

Observation of charge-to-spin conversion with giant efficiency at Ni$_{0.8}$Fe$_{0.2}$/Bi$_{2}$WO$_{6}$ interface

Magnetization switching using spin-orbit torque offers a promising route to developing non-volatile memory technologies. The prerequisite, however, is the charge-to-spin current conversion, which has been achieved traditionally by harnessing the spin-orbit interaction in heavy metals, topological insulators, and heterointerfaces hosting a high-mobility two-dimensional electron gas. Here, we report the observation of charge-to-spin current conversion at the interface between ferromagnetic Ni$_{0.8}$Fe$_{0.2}$ and ferroelectric Bi$_{2}$WO$_{6}$ thin films. The resulting spin-orbit torque consists of damping-like and field-like components, and the estimated efficiency amounts to about 0.48 $\pm$ 0.02, which translates to 0.96 $\pm$ 0.04 nm$^{-1}$ in terms of interfacial efficiency. These numbers are comparable to contemporary spintronic materials exhibiting giant spin-orbit torque efficiency. We suggest that the Rashba Edelstein effect underpins the charge-to-spin current conversion on the interface side of Ni$_{0.8}$Fe$_{0.2}$. Further, we provide an intuitive explanation for the giant efficiency in terms of the spin-orbit proximity effect, which is enabled by orbital hybridization between W and Ni (Fe) atoms across the interface. Our work highlights that Aurivillius compounds are a potential addition to the emerging transition metal oxide-based spin-orbit materials.

cond-mat.mtrl-sci

Pattern recognition with neuromorphic computing using magnetic-field induced dynamics of skyrmions

Nonlinear phenomena in physical systems can be used for brain-inspired computing with low energy consumption. Response from the dynamics of a topological spin structure called skyrmion is one of the candidates for such a neuromorphic computing. However, its ability has not been well explored experimentally. Here, we experimentally demonstrate neuromorphic computing using nonlinear response originating from magnetic-field induced dynamics of skyrmions. We designed a simple-structured skyrmion-based neuromorphic device and succeeded in handwritten digit recognition with the accuracy as large as 94.7 % and waveform recognition. Notably, there exists a positive correlation between the recognition accuracy and the number of skyrmions in the devices. The large degree of freedoms of skyrmion systems, such as the position and the size, originate the more complex nonlinear mapping and the larger output dimension, and thus high accuracy. Our results provide a guideline for developing energy-saving and high-performance skyrmion neuromorphic computing devices.

cs.ET

Negative correlation between the linear and the nonlinear conductance in magnetic tunnel junctions

The current-voltage ($IV$) characteristics beyond the linear response regime of magnetic tunnel junction (MTJ) is systematically investigated. We find a clear negative correlation between the two coefficients to characterize the linear ($I$$\propto$$V$) and the lowest-order nonlinear ($I$$\propto$$V^3$) currents, which holds regardless of the temperature and the thickness of the tunnel barrier. This observation cannot simply be explained by the standard tunneling model such as the Brinkman model, suggesting a mechanism intrinsic to MTJ. We propose a phenomenological model based on the Julliére model that attributes the observed negative correlation to the spin-flip tunneling assisted by a magnon. These results suggest a fundamental law between the linear and the nonlinear response of MTJ.

cond-mat.mes-hall

Quantum-well tunneling anisotropic magnetoresistance above room temperature

Quantum-well (QW) devices have been extensively investigated in semiconductor structures. More recently, spin-polarized QWs were integrated into magnetic tunnel junctions (MTJs). In this work, we demonstrate the spin-based control of the quantized states in iron $3d$-band QWs, as observed in experiments and theoretical calculations. We find that the magnetization rotation in the Fe QWs significantly shifts the QW quantization levels, which modulate the resonant-tunneling current in MTJs, resulting in a tunneling anisotropic magnetoresistance (TAMR) effect of QWs. This QW-TAMR effect is sizable compared to other types of TAMR effect, and it is present above the room-temperature. In a QW MTJ of Cr/Fe/MgAl$_2$O$_4$/top electrode, where the QW is formed by a mismatch between Cr and Fe in the $d$ band with $Δ_1$ symmetry, a QW-TAMR ratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at 380K. The magnetic control of QW transport can open new applications for spin-coupled optoelectronic devices, ultra-thin sensors, and memories.

cond-mat.mes-hall

Deterministic influence of substrate-induced oxygen vacancy diffusion on $Bi_{2}WO_{6}$ thin film growth

In oxide epitaxy, the growth temperature and background oxygen partial pressure are considered as the most critical factors that control the phase stability of an oxide thin film. Here, we report an unusual case wherein diffusion of oxygen vacancies from the substrate overpowers the growth temperature and oxygen partial pressure to deterministically influence the phase stability of $Bi_{2}WO_{6}$ thin film grown by the pulsed laser deposition technique. We show that when grown on an oxygen-deficient $SrTiO_{3}$ substrate, the $Bi_{2}WO_{6}$ film exhibits a mixture of (001) and (100)/(010)-oriented domains alongside (001)-oriented impurity $WO_{3}$ phases. The (100)/(010)-oriented $Bi_{2}WO_{6}$ phases form a self-organized 3D nanopillar-structure, yielding a very rough film surface morphology. Oxygen annealing of the substrate or using a few monolayer-thick $SrRuO_{3}$ as the blocking layer for oxygen vacancy diffusion enables growing high-quality single-crystalline $Bi_{2}WO_{6}$ (001) thin film exhibiting an atomically smooth film surface with step-terrace structure. We propose that the large oxide-ion conductivity of $Bi_{2}WO_{6}$ facilitates diffusion of oxygen vacancies from the substrate during the film growth, accelerating the evaporation of volatile Bismuth (Bi), which hinders the epitaxial growth. Our work provides a general guideline for high-quality thin film growth of Aurivillius compounds and other oxide-ion conductors containing volatile elements.

cond-mat.mtrl-sci

Voltage-controlled magnetic anisotropy under the electronic structure modulation in quantum wells

Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access memories (MRAMs). Here, we show that manipulating the condensed states, i.e., introducing quantum well (QW) can significantly influence the VCMA in a Cr/Fe-QW/MgAl2O4 based magnetic tunnel junction (MTJ). Only for the MTJ with an even number of Fe atomic layers, we observed a novel A-shaped VCMA curve for a particular QW state, where magnetic anisotropy energy (MAE) reaches a local maximum at zero bias and reduces when applying both positive and negative bias, i.e., a novel bi-polar VCMA effect. Our ab initio calculations demonstrate that the QW states give an additional contribution to perpendicular magnetic anisotropy (PMA), which can explain not only the A-shaped VCMA but also the Fe-layer-number parity dependence of VCMA. The present study suggests that the QW-modulated VCMA should open a new pathway to design VCMA-assisted MRAM.

cond-mat.mtrl-sci

Multiple modes of a single spin torque oscillator under the non-linear region

A numerical investigation is conducted for a single spin-torque oscillator under the non-linear region. A large angle precession triggers the generation of multiple modes without any feedbacked circuits and/or magnetic couplings with neighboring oscillators. Our simulations show that a single eigenmode of a given spin-torque oscillator can trigger up to six discrete modes as the sideband modes. These findings will offer the new functionality to the STO for developing the spintronic logic circuits.

physics.app-ph

Generation of Multipeak Spectrum of Spin Torque Oscillator in Non-linear Regime

We investigate the spectral characteristics of spin torque oscillator (STO) excited by the spin Hall-induced spin current. We observe that the modest spin current injection triggers the conventional single peak oscillating behavior of STO. As the spin current is further increased to enter the non-linear regime, we find the transition of the spectrum from a single peak to multipeak structure whose frequency spacing is constant. This behavior can be primarily explained by the extremely broadened peak of the STO, which is accompanied by the frequency-dependent filtering by the transmission line. To explain the observation more quantitatively, we also discuss that the multipeak may reflect the characteristics of the intrinsic dynamics of STO in the non-linear regime.

cond-mat.mes-hall

Thermoelectric microscopy of magnetic skyrmions

The magnetic skyrmion is a nanoscale topological object characterized by the winding of the magnetic moments, appearing in magnetic materials with broken inversion symmetry. Because of its low current threshold for driving, the skyrmions have been intensely studied toward novel storage applications by using electron-beam, X-ray, and visible light microscopies. Here, we show that the skyrmions can be imaged via thermoelectric signals of spin-caloritronic phenomena in combination with focused heating. We applied a local temperature gradient to a CoFeB/Ta/W multilayer film with scanning a heating position and, by exploiting a Hall bar structure, mapped the magnitude as well as the direction of the resultant thermoelectric current distributions, which link to skyrmions' inner magnetic textures. This method also enables the observation of skyrmion dynamics under driving current pulses, being a useful imaging technique for the development of skyrmion devices.

cond-mat.mes-hall

Giant interfacial perpendicular magnetic anisotropy in Fe/CuIn$_{1-x}$Ga$_x$Se$_2$ beyond Fe/MgO

We study interfacial magnetocrystalline anisotropies in various Fe/semiconductor heterostructures by means of first-principles calculations. We find that many of those systems show perpendicular magnetic anisotropy (PMA) with a positive value of the interfacial anisotropy constant $K_{\rm i}$. In particular, the Fe/CuInSe$_2$ interface has a large $K_{\rm i}$ of $\sim 2.3\,{\rm mJ/m^2}$, which is about 1.6 times larger than that of Fe/MgO known as a typical system with relatively large PMA. We also find that the values of $K_{\rm i}$ in almost all the systems studied in this work follow the well-known Bruno's relation, which indicates that minority-spin states around the Fermi level provide dominant contributions to the interfacial magnetocrystalline anisotropies. Detailed analyses of the local density of states and wave-vector-resolved anisotropy energy clarify that the large $K_{\rm i}$ in Fe/CuInSe$_2$ is attributed to the preferable $3d$-orbital configurations around the Fermi level in the minority-spin states of the interfacial Fe atoms. Moreover, we have shown that the locations of interfacial Se atoms are the key for such orbital configurations of the interfacial Fe atoms.

cond-mat.mtrl-sci

Nonlinear electric field effect on perpendicular magnetic anisotropy in Fe/MgO interfaces

The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(001) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly through post-annealing temperature and measurement temperature dependences. A large coefficient of the electric field effect of more than 200 fJ/Vm was observed in the negative range of electric field, as well as an areal energy density of perpendicular magnetic anisotropy (PMA) of around 600 uJ/m2. More interestingly, nonlinear behavior, giving rise to a local minimum around +100 mV/nm, was observed in the electric field dependence of magnetic anisotropy, being independent of the post-annealing and measurement temperatures. The insensitivity to both the interface conditions and the temperature of the system suggests that the nonlinear behavior is attributed to an intrinsic origin such as an inherent electronic structure in the Fe/MgO interface. The present study can contribute to the progress in theoretical studies, such as ab initio calculations, on the mechanism of the electric field effect on PMA.

cond-mat.mtrl-sci

Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates

We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy based magnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat surface were achieved using a MgO buffer layer. A tunnel magnetoresistance (TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure on a 7.5-nm-thick MgO buffer. Spin-transfer torque induced magnetization switching was achieved in the MTJs with a 2-nm-thick polycrystalline CFA film as a switching layer. Using a thermal activation model, the intrinsic critical current density (Jc0) was determined to be 8.2 x 10^6 A/cm^2, which is lower than 2.9 x 10^7 A/cm^2, the value for epitaxial CFA-MTJs [Appl. Phys. Lett. 100, 182403 (2012)]. We found that the Gilbert damping constant evaluated using ferromagnetic resonance measurements for the polycrystalline CFA film was ~0.015 and was almost independent of the CFA thickness (2~18 nm). The low Jc0 for the polycrystalline MTJ was mainly attributed to the low damping of the CFA layer compared with the value in the epitaxial one (~0.04).

cond-mat.mtrl-sci

Signature of Coherent Transport in Epitaxial Spinel-based Magnetic Tunnel Junctions Probed by Shot Noise Measurement

We measured the shot noise in fully epitaxial Fe/MgAl2OX/Fe-based magnetic tunneling junctions (MTJs). While the Fano factor to characterize the shot noise is very close to unity in the antiparallel configuration, it is reduced to 0.98 in the parallel configuration. This observation shows the sub-Poissonian process of electron tunneling in the parallel configuration, indicating the coherent tunneling through the spinel-based tunneling barrier of the MTJ.

cond-mat.mes-hall

Dynamics of coupled vortices in a pair of ferromagnetic disks

We here experimentally demonstrate that coupled gyration modes can be resonantly excited primarily by the ac current in a pair of ferromagnetic disks with varied separating distance. The sole gyrotropic mode clearly splits into a higher and a lower frequency modes for different configurations of polarities via dipolar interaction. These experimental results indicate that the magnetostatically coupled pair of vortices behaves similar to a diatomic molecule with bonding and anti-bonding states. These findings lead to the possible extension of designing the magnonic band structure in a chain or an array of vortices.

cond-mat.mes-hall

Conductance Anomaly and Fano Factor Reduction in Quantum Point Contacts

We report an experimental study on the shot noise as well as the dc transport properties of a quantum point contact (QPC) whose conductance anomaly can be tuned electrostatically by the gate electrodes. By controlling the single QPC so that it has no anomaly or an anomaly at $0.5 G_0$, $0.8 G_0$ or $0.9 G_0$ ($G_0 = 2e^2/h$), we prove that the anomaly always accompanies the Fano factor reduction due to the asymmetric transmission of the two spin-dependent channels for the conductance lower than $G_0$. For the QPC tuned to have the anomaly at $0.5 G_0$ the channel asymmetry is found to be as large as 67% with the spin gap energy gradually evolving as the conductance increases.

cond-mat.mes-hall

Control of Domain Wall Position by Electrical Current in Structured Co/Ni Wire with Perpendicular Magnetic Anisotropy

We report the direct observation of the current-driven domain wall (DW) motion by magnetic force microscopy in a structured Co/Ni wire with perpendicular magnetic anisotropy. The wire has notches to define the DW position. It is demonstrated that single current pulses can precisely control the DW position from notch to notch with high DW velocity of 40 m/s.

cond-mat.mtrl-sci

Dynamical pinning of domain wall in magnetic nanowire induced by Walker breakdown

Transmission probability of a domain wall through a magnetic nanowire is investigated as a function of the external magnetic field. Very intriguing phenomenon is found that the transmission probability shows a significant drop after exceeding the threshold driving field, which contradicts our intuition that a domain wall is more mobile in the higher magnetic field. The micromagnetics simulation reveals that the domain wall motion in the wire with finite roughness causes the dynamical pinning due to the Walker breakdown, which semi-quantitatively explains our experimental results.

cond-mat.mtrl-sci

Switching magnetic vortex core by a single nanosecond current pulse

In a ferromagnetic nanodisk, the magnetization tends to swirl around in the plane of the disk and can point either up or down at the center of this magnetic vortex. This binary state can be useful for information storage. It is demonstrated that a single nanosecond current pulse can switch the core polarity. This method also provides the precise control of the core direction, which constitutes fundamental technology for realizing a vortex core memory.

cond-mat.other