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Shirin Mozaffari

Publications and source records attributed to Shirin Mozaffari.

22 records · Page 2Linked to original sources

Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2

Here, we present a study on the Fermi-surface of the Dirac type-II semi-metallic candidate NiTe$_2$ via the temperature and angular dependence of the de Haas-van Alphen (dHvA) effect measured in single-crystals grown through Te flux. In contrast to its isostructural compounds like PtSe$_2$, band structure calculations predict NiTe$_2$ to display a tilted Dirac node very close to its Fermi level that is located along the $Γ$ to A high symmetry direction within its first Brillouin zone (FBZ). The angular dependence of the dHvA frequencies is found to be in agreement with the first-principle calculations when the electronic bands are slightly shifted with respect to the Fermi level ($\varepsilon_F$), and therefore provide support for the existence of a Dirac type-II node in NiTe$_2$. Nevertheless, we observed mild disagreements between experimental observations and density Functional theory calculations as, for example, nearly isotropic and light experimental effective masses. This indicates that the dispersion of the bands is not well captured by DFT. Despite the coexistence of Dirac-like fermions with topologically trivial carriers, samples of the highest quality display an anomalous and large, either linear or sub-linear magnetoresistivity. This suggests that Lorentz invariance breaking Dirac-like quasiparticles dominate the carrier transport in this compound.

cond-mat.mtrl-sci↗

Multiple Dirac Nodes and Symmetry Protected Dirac Nodal Line in Orthorhombic $α$-RhSi

Owing to their chiral cubic structure, exotic multifold topological excitations have been predicted and recently observed in transition metal silicides like $β$-RhSi. Herein, we report that the topological character of RhSi is also observed in its orthorhombic $α$-phase which displays multiple types of Dirac nodes very close to the Fermi level ($\varepsilon_F$) with the near absence of topologically trivial carriers. We discuss the symmetry analysis, band connectivity along high-symmetry lines using group representations, the band structure, and the nature of the Dirac points and nodal lines occurring near $\varepsilon_F$. The de Haas-van Alphen effect (dHvA) indicates a Fermi surface in agreement with the calculations. We find an elliptically-shaped nodal line very close to $\varepsilon_F$ around and near the $S$-point on the $k_y-k_z$ plane that results from the intersection of two upside-down Dirac cones. The two Dirac points of the participating Kramers degenerate bands are only 5 meV apart, hence an accessible magnetic field might induce a crossing between the spin-up partner of the upper-Dirac cone and the spin-down partner of the lower Dirac cone, possibly explaining the anomalies observed in the magnetic torque.

cond-mat.str-el↗

Superconducting Phase-Diagram of H3S under High Magnetic Fields

We report the temperature dependence of the upper critical fields $μ_0H_{c2}(T)$ of the high temperature superconductor H$_3$S under applied pressures of 155 and 160 GPa through the electrical resistance transition observed under DC and pulsed magnetic fields up to 65 T, a record high combination of fields and pressures. We find that $H_{c2}(T)$ generally follows the Werthamer, Helfand and Hohenberg (WHH) formalism at low fields, albeit with noticeable deviations upon approaching our experimental limit of $μ_0H = 65$ T. In fact, $H_{c2}(T)$ displays a remarkably linear dependence on temperature over an extended temperature range also found in multigap or in strongly-coupled superconductors. The best fit of $H_{c2}(T)$ to the WHH formula yields a negligible value for the Maki parameter $α$ and for spin-orbit scattering constant $λ_{\text{SO}}$. However, its behavior is relatively well-described by a model based on strong coupling superconductivity with a coupling constant $λ\sim 2$. Therefore, we conclude that H$_3$S behaves as a strong-coupled orbital-limited superconductor over the entire range of temperatures and fields used for our measurements.

cond-mat.str-el↗

Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content

We report the effect of oxygen pressure during growth ($P_{O_{2}}$) on the electronic and magnetic properties of PrAlO$_3$ films grown on $\rm TiO_{2}$-terminated SrTiO$_3$ substrates. Resistivity measurements show an increase in the sheet resistance as $P_{O_{2}}$ is increased. The temperature dependence of the sheet resistance at low temperatures is consistent with Kondo theory for $P_{O_{2}} \ge 10^{-5}$ torr. Hall effect data exhibit a complex temperature dependence that suggests a compensated carrier density. We observe behavior consistent with two different types of carriers at interfaces grown at $P_{O_{2}} \ge 10^{-4}$ torr. For these interfaces, we measured a moderate positive magnetoresistance (MR) due to a strong spin-orbit (SO) interaction at low magnetic fields that evolves into a larger negative MR at high fields. Positive high MR values are associated with samples where a fraction of carriers are derived from oxygen vacancies. Analysis of the MR data permitted the extraction of the SO interaction critical field ( e.g. $ H_{SO}=$1.25 T for $P_{O_{2}}=10^{-5}$ torr). The weak anti-localization effect due to a strong SO interaction becomes smaller for higher $P_{O_{2}}$ grown samples, where MR values are dominated by the Kondo effect, particularly at high magnetic fields.

cond-mat.str-el↗