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Shishir Pandya

Publications and source records attributed to Shishir Pandya.

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Advancing from phenomenological to predictive theory of ferroelectric oxide solution properties through consideration of domain walls

Prediction of properties from composition is a fundamental goal of materials science and can greatly accelerate development of functional materials. It is particularly relevant for ferroelectric perovskite solid solutions where compositional variation is a primary tool for materials design. To advance beyond the commonly used Landau-Ginzburg-Devonshire and density functional theory methods that despite their power are not predictive, we elucidate the key interactions that govern ferroelectrics using 5-atom bulk unit cells and non-ground-state defect-like ferroelectric domain walls as a simple as possible but not simpler model systems. We also develop a theory relating properties at several different length scales that provides a unified framework for the prediction of ferroelectric, antiferroelectric and ferroelectric phase stabilities and the key transition temperature, coercive field and polarization properties from composition. The elucidated physically meaningful relationships enable rapid identification of promising piezoelectric and dielectric materials.

cond-mat.mtrl-sci

Single Gate P-N Junctions in Graphene-Ferroelectric Devices

Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport measurements of graphene p-n junctions formed via simple modifications to a PbZr$_{0.2}$Ti$_{0.8}$O$_3$ substrate, combined with a self-assembled layer of ambient environmental dopants. We show that the substrate configuration controls the local doping region, and that the p-n junction behavior can be controlled with a single gate. Finally, we show that the ferroelectric substrate induces a hysteresis in the environmental doping which can be utilized to activate and deactivate the doping, yielding an `on-demand' p-n junction in graphene controlled by a single, universal backgate.

cond-mat.mtrl-sci