arXiv subjects

Shishun Zhao

Publications and source records attributed to Shishun Zhao.

5 recordsLinked to original sources

arXiv2026

Energy-efficient spin Hall nano-oscillators using near-compensated CoGd ferrimagnets

Conventional spin Hall nano-oscillators (SHNOs) based on ferromagnets face practical limitations due to high threshold current densities and large external magnetic field requirements. Ferrimagnets provide an attractive alternative due to their unique magnetic dynamics and potential for energy-efficient spintronic devices. In this study, we report rare-earth-transition-metal (RE-TM) ferrimagnetic SHNOs utilizing Co1-xGdx alloys, in which compositional tuning enables high-performance operation near the magnetization compensation. The optimized SHNO operates at a low current density (1.43*10^7 A/cm^2), a small magnetic field (5 mT), and exhibits a narrow linewidth (0.61 MHz) simultaneously, showing an order-of-magnitude improvement over its ferromagnetic counterparts. This enhanced performance arises from high spin-orbit torque efficiency, low magnetic anisotropy, reduced effective magnetization, and minimized nonlinearity near the compensation point. These results establish RE-TM ferrimagnets as a promising material platform for next-generation spintronic devices and offer new strategies for realizing energy-efficient, high-performance spintronic oscillators.

cond-mat.mtrl-sci↗

arXiv2026

All-electric picosecond field-free spin-orbit torque switching in magnetic trilayers

Spin-orbit torque (SOT) enables the electrical manipulation of the magnetization with high speed and low energy consumption for magnetic random-access memory (MRAM) applications. Previous studies of short-pulse SOT switching have mainly focused on the nanosecond regime, whereas reports employing picosecond pulses remain scarce and have largely relied on field-assisted switching using bulky, high-power laser systems, limiting prospects for chip-level integration. Here, we introduce an all-electrical on-chip nanoplasma pulse generator capable of producing pulses as short as 6.4 ps, enabling ultrafast picosecond field-free SOT switching in magnetic trilayers. We show that reducing the pulse width lowers the writing energy by 2-3 orders of magnitude, with ultrafast Joule heating assistance playing an essential role in the enhanced efficiency of the picosecond regime. Our demonstration of ultrafast, all-electrical, and field-free SOT switching establishes the nanoplasma pulse generator as an on-chip platform for ultrafast spintronic studies, with promise for high-speed, energy-efficient, and scalable SOT-MRAM technologies.

cond-mat.mtrl-sci↗

arXiv2025

Interpretable Deep Regression Models with Interval-Censored Failure Time Data

Deep neural networks (DNNs) have become powerful tools for modeling complex data structures through sequentially integrating simple functions in each hidden layer. In survival analysis, recent advances of DNNs primarily focus on enhancing model capabilities, especially in exploring nonlinear covariate effects under right censoring. However, deep learning methods for interval-censored data, where the unobservable failure time is only known to lie in an interval, remain underexplored and limited to specific data type or model. This work proposes a general regression framework for interval-censored data with a broad class of partially linear transformation models, where key covariate effects are modeled parametrically while nonlinear effects of nuisance multi-modal covariates are approximated via DNNs, balancing interpretability and flexibility. We employ sieve maximum likelihood estimation by leveraging monotone splines to approximate the cumulative baseline hazard function. To ensure reliable and tractable estimation, we develop an EM algorithm incorporating stochastic gradient descent. We establish the asymptotic properties of parameter estimators and show that the DNN estimator achieves minimax-optimal convergence. Extensive simulations demonstrate superior estimation and prediction accuracy over state-of-the-art methods. Applying our method to the Alzheimer's Disease Neuroimaging Initiative dataset yields novel insights and improved predictive performance compared to traditional approaches.

stat.ML↗

arXiv2024

Nanoscale spin rectifiers for harvesting ambient radiofrequency energy

Radiofrequency harvesting using ambient wireless energy could be used to reduce the carbon footprint of electronic devices. However, ambient radiofrequency energy is weak (less than -20 dBm), and thermodynamic limits and high-frequency parasitic impedance restrict the performance of state-of-the-art radiofrequency rectifiers. Nanoscale spin rectifiers based on magnetic tunnel junctions have recently demonstrated high sensitivity, but suffer from a low a.c.-to-d.c. conversion efficiency (less than 1%). Here, we report a sensitive spin rectifier rectenna that can harvest ambient radiofrequency signals between -62 and -20 dBm. We also develop an on-chip co-planar waveguide-based spin rectifier array with a large zero-bias sensitivity (around 34,500 mV/mW) and high efficiency (7.81%). Self-parametric excitation driven by voltage-controlled magnetic anisotropy is a key mechanism that contributes to the performance of the spin-rectifier array. We show that these spin rectifiers can wirelessly power a sensor at a radiofrequency power of -27 dBm.

cond-mat.mtrl-sci↗

arXiv2018

Ionic Modulation of Interfacial Magnetism through Electrostatic Doping in Pt/YIG bilayer heterostructure

Voltage modulation of yttrium iron garnet (YIG) with compactness, high speed response, energy efficiency and both practical/theoretical siginificances can be widely applied to various YIG based spintronics such as spin Hall, spin pumping, spin Seeback effects. Here we initial an ionic modulation of interfacial magnetism process on YIG/Pt bilayer heterostructures, where the Pt capping would influence the ferromagnetic (FMR) field position significantly, and realize a significant magnetism enhancement in bilayer system. A large voltage induced FMR field shifts of 690 Oe has been achieved in YIG (13 nm)/Pt (3 nm) multilayer heterostructures under a small voltage bias of 4.5 V. The remarkable ME tunability comes from voltage induced extra FM ordering in Pt metal layer near the Pt/YIG interface. The first-principle theoretical simulation reveal that the electrostatic doping induced Pt5+ ions have strong magnetic ordering due to uncompensated d orbit electrons. The large voltage control of FMR change pave a foundation towards novel voltage tunable YIG based spintronics.

cond-mat.mtrl-sci↗