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Shiyong Wang

Publications and source records attributed to Shiyong Wang.

At least 37 records · Page 2Linked to original sources

Quantum-size effect induced Andreev bound states in ultrathin metallic islands proximitized by a superconductor

While Andreev bound states (ABSs) have been realized in engineered superconducting junctions, their direct observation in normal metal/superconductor heterostructures-enabled by quantum confinement-remains experimentally elusive. Here, we report the detection of ABSs in ultrathin metallic islands (Bi, Ag, and SnTe) grown on the s-wave superconductor NbN. Using high-resolution scanning tunneling microscopy and spectroscopy, we clearly reveal in-gap ABSs with energies symmetric about the Fermi level. While the energies of these states show no position dependence, their wave functions exhibit spatial oscillations, demonstrating a quantum size effect. Both the energy levels and spatial distribution of the ABSs can be reproduced by our effective model in which a metallic island is coupled to the superconducting substrate via the proximity effect. We demonstrate that the coupling strength plays a critical role in determining the ABS energies. Our work introduces a novel physical platform for implementing ABSs, which hold promise for significant device applications.

cond-mat.supr-con↗

Imaging moiré flat bands and Wigner molecular crystals in twisted bilayer MoTe2

Two-dimensional semiconducting moiré materials have emerged as a highly tunable platform for exploring novel quantum phenomena. Recently, tMoTe2 has attracted significant attentions due to the observation of the long-sought fractional quantum anomalous Hall effect. However, a comprehensive microscopic understanding of the tMoTe2 moiré superlattice remains elusive. Here, we report STM/STS studies in dual-gated tMoTe2 moiré devices with twist angles ranging from 2.3 to 3.8 deg. The device consists of two independent back-gates, one enables an ohmic contact for tMoTe2, while the other fine-tunes the Fermi level of tMoTe2. This dual-gate control enables direct measurement of the electronic structure in tMoTe2 under varied displacement fields and moiré filling factors, by fine tuning the gate voltage and the tip bias. Our STS spectra and spatial imaging reveal that the low-energy moiré flat bands are predominantly localized in the XM and MX regions of the moiré superlattice. At zero E-field, these bands form a honeycomb lattice with non-trivial topology, whereas an applied E-field drives a transition into two distinct triangular lattices with trivial topology. The spatial distributions align with large-scale first-principle calculations, demonstrating that the topological flat bands arise from the K-valley hybridization between the top and bottom MoTe2 layers. Furthermore, we show that the effective moiré potential depth can be controlled via gate and tip biases. At sufficient potential depths, we observe the emergence of Wigner molecular crystals, transitioning MX triangular lattice into a Kagome lattice at MX moiré filling factor 3. These results elucidate the microscopic origin of topological flat bands in tMoTe2 and demonstrate electric-field control of topology and correlated electronic orders, paving the way to engineer exotic quantum phases in moiré simulators.

cond-mat.mes-hall↗

Density-dependent spin susceptibility and effective mass in monolayer MoSe2

Atomically thin MoSe2 is a promising platform for investigating quantum phenomena due to its large effective mass, high crystal quality, and strong spin-orbit coupling. In this work, we demonstrate a triple-gate device design with bismuth contacts, enabling reliable ohmic contact down to low electron densities, with a maximum Hall mobility of approximately 22,000 cm2/Vs. Low-temperature transport measurements illustrate metal-insulator transitions, and density-dependent quantum oscillation sequences. Enhanced spin susceptibility and density-dependent effective mass are observed, attributed to interaction effects and valley polarization. These findings establish monolayer MoSe2 as a versatile platform for further exploring interaction-driven quantum states.

cond-mat.mes-hall↗

Real-space study of zero-field correlation in tetralayer rhombohedral graphene

Rhombohedral graphene (RG) has emerged as a promising platform for exploring exotic quantum phenomena, such as quantum magnetism, unconventional superconductivity, and fractional quantum anomalous Hall effects. Despite its potential, atomic-scale investigations of RG remain limited, hindering a detailed microscopic understanding of the origins of these correlated states. In this study, we employ scanning probe microscopy and spectroscopy to probe the intrinsic electronic states in trilayer and tetralayer RG. We identify a correlated insulating state with a 17 meV gap at the charge neutrality point in tetralayer RG, which is absent in the trilayer configuration. This gap is suppressed by applying a perpendicular magnetic field or doping the charge carrier density and does not exhibit inter-valley coherence patterns. We attribute this phenomenon to a symmetry-broken layer antiferromagnetic state, characterized by ferrimagnetic ordering in the outermost layers and antiferromagnetic coupling between them. To further investigate this magnetic correlated state, we conduct local scattering experiments. Within the correlated regime, a bound state emerges around a non-magnetic impurity but is absent near magnetic impurities, suggesting that non-magnetic doping induces a spin texture in the ferrimagnetic surface layers. Outside the correlated regime, Friedel oscillations are observed, allowing precise determination of the band dispersion in tetralayer RG. These findings provide atomic-scale evidences of zero-field correlations in RG and may be extended to study other exotic phases in RG.

cond-mat.mes-hall↗

Topological surface state dominated nonlinear transverse response and microwave rectification at room temperature

Nonlinear Hall effect (NLHE) offers a novel means of uncovering symmetry and topological properties in quantum materials, holding promise for exotic (opto)electronic applications such as microwave rectification and THz detection. The BCD-independent NLHE could exhibit a robust response even at room temperature, which is highly desirable for practical applications. However, in materials with bulk inversion symmetry, the coexistence of bulk and surface conducting channels often leads to a suppressed NLHE and complex thickness-dependent behavior. Here, we report the observation of room-temperature nonlinear transverse response in 3D topological insulator Bi2Te3 thin films, whose electrical transport properties are dominated by topological surface state (TSS). By varying the thickness of Bi2Te3 epitaxial films from 7 nm to 50 nm, we found that the nonlinear transverse response increases with thickness from 7 nm to 25 nm and remains almost constant above 25 nm. This is consistent with the thickness-dependent basic transport properties, including conductance, carrier density, and mobility, indicating a pure and robust TSS-dominated linear and nonlinear transport in thick (>25 nm) Bi2Te3 films. The weaker nonlinear transverse response in Bi2Te3 below 25 nm was attributed to Te deficiency and poorer crystallinity. By utilizing the TSS-dominated electrical second harmonic generation, we successfully achieved the microwave rectification from 0.01 to 16.6 GHz in 30 nm and bulk Bi2Te3. Our work demonstrated the room temperature nonlinear transverse response in a paradigm topological insulator, addressing the tunability of the topological second harmonic response by thickness engineering.

cond-mat.mtrl-sci↗

Tunable topological edge states in black phosphorus-like Bi(110)

We have investigated the structures and electronic properties of ultra-thin Bi(110) films grown on an s-wave superconductor substrate using low-temperature scanning tunneling microscopy and spectroscopy. Remarkably, our experimental results validate the theoretical predictions that the manipulation of Bi(110) surface atom buckling can control the topological phase transition. Notably, we have observed robust unreconstructed edge states at the edges of both 3-bilayer (BL) and 4-BL Bi(110) films, with the 4-BL film displaying stronger edge state intensity and a smaller degree of atomic buckling. First-principle calculations further substantiate these findings, demonstrating a gradual reduction in buckling as the film thickness increases, with average height differences between two Bi atoms of approximately 0.19 Å, 0.10 Å, 0.05 Å, and 0.00 Å for the 1-BL, 2-BL, 3-BL, and 4-BL Bi(110) films, respectively. When Bi films are larger than 2 layers, the system changes from a trivial to a non-trivial phase. This research sets the stage for the controlled realization of topological superconductors through the superconducting proximity effect, providing a significant platform for investigating Majorana zero modes and fabricating quantum devices.

cond-mat.mtrl-sci↗

Atomic-Scale Imaging of Fractional Spinon Quasiparticles in Open-Shell Triangulene Spin-$\frac{1}{2}$ Chains

The emergence of spinon quasiparticles, which carry spin but lack charge, is a hallmark of collective quantum phenomena in low-dimensional quantum spin systems. While the existence of spinons has been demonstrated through scattering spectroscopy in ensemble samples, real-space imaging of these quasiparticles within individual spin chains has remained elusive. In this study, we construct individual Heisenberg antiferromagnetic spin-$\frac{1}{2}$ chains using open-shell [2]triangulene molecules as building blocks. Each [2]triangulene unit, owing to its sublattice imbalance, hosts a net spin-$\frac{1}{2}$ in accordance with Lieb's theorem, and these spins are antiferromagnetically coupled within covalent chains with a coupling strength of $J = 45$ meV. Through scanning tunneling microscopy and spectroscopy, we probe the spin states, excitation gaps, and their spatial excitation weights within covalent spin chains of varying lengths with atomic precision. Our investigation reveals that the excitation gap decreases as the chain length increases, extrapolating to zero for long chains, consistent with Haldane's gapless prediction. Moreover, inelastic tunneling spectroscopy reveals an m-shaped energy dispersion characteristic of confined spinon quasiparticles in a one-dimensional quantum box. These findings establish a promising strategy for exploring the unique properties of excitation quasiparticles and their broad implications for quantum information.

cond-mat.mtrl-sci↗

Artificially built Kondo chains with organic radicals on metallic surfaces: new model system of heavy fermion quantum criticality

Heavy fermion quantum criticality is an extremely rich domain of research which represents a framework to understand strange metals as a consequence of a Kondo breakdown transition. Here we provide an experimental realization of such systems in terms of organic radicals on a metallic surface. The ground state of organic radicals is a Kramer's doublet that can be modeled by a spin 1/2 degree of freedom. Using on-surface synthesis and scanning tunneling microscopy (STM) tip manipulation, one can controllably engineer and characterize chains of organic radicals on a Au(111) surface. The spatial-resolved differential conductance reveals site-dependent low-energy excitations, which support the picture of emergent many-body Kondo physics. Using quantum Monte Carlo simulations, we show that a Kondo lattice model of spin chains on a metallic surface reproduces accurately the experimental results. This allows us to interpret the experimental results in terms of a heavy fermion metal, below the coherence temperature. We foresee that the tunability of these systems will pave the way to realize quantum simulators of heavy fermion criticality.

cond-mat.mes-hall↗

Ultra-Long Homochiral Graphene Nanoribbons Grown Within h-BN Stacks for High-Performance Electronics

Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van der Waals encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult to control, prone to contamination, and unscalable. Here, we report on the transfer-free direct growth of high-quality graphene nanoribbons (GNRs) within h-BN stacks. The as-grown embedded GNRs exhibit highly desirable features being ultralong (up to 0.25 mm), ultranarrow ( < 5 nm), and homochiral with zigzag edges. Our atomistic simulations reveal that the mechanism underlying the embedded growth involves ultralow GNR friction when sliding between AA'-stacked h-BN layers. Using the grown structures, we demonstrate the transfer-free fabrication of embedded GNR field-effect devices that exhibit excellent performance at room temperature with mobilities of up to 4,600 $cm^{2} V^{-1} s^{-1}$ and on-off ratios of up to $10^{6}$. This paves the way to the bottom-up fabrication of high-performance electronic devices based on embedded layered materials.

cond-mat.mes-hall↗

Topological edge and corner states in Bi fractals on InSb

Topological materials hosting metallic edges characterized by integer quantized conductivity in an insulating bulk have revolutionized our understanding of transport in matter. The topological protection of these edge states is based on symmetries and dimensionality. However, only integer-dimensional models have been classified, and the interplay of topology and fractals, which may have a non-integer dimension, remained largely unexplored. Quantum fractals have recently been engineered in metamaterials, but up to present no topological states were unveiled in fractals realized in real materials. Here, we show theoretically and experimentally that topological edge and corner modes arise in fractals formed upon depositing thin layers of bismuth on an indium antimonide substrate. Scanning tunneling microscopy reveals the appearance of (nearly) zero-energy modes at the corners of Sierpiński triangles, as well as the formation of outer and inner edge modes at higher energies. Unexpectedly, a robust and sharp depleted mode appears at the outer and inner edges of the samples at negative bias voltages. The experimental findings are corroborated by theoretical calculations in the framework of a continuum muffin-tin and a lattice tight-binding model. The stability of the topological features to the introduction of a Rashba spin-orbit coupling and disorder is discussed. This work opens the perspective to novel electronics in real materials at non-integer dimensions with robust and protected topological states.

cond-mat.mes-hall↗

Twisted bilayer zigzag-graphene nanoribbon junctions with tunable edge states

Stacking two-dimensional layered materials such as graphene and transitional metal dichalcogenides with nonzero interlayer twist angles has recently become attractive because of the emergence of novel physical properties. Stacking of one-dimensional nanomaterials offers the lateral stacking offset as an additional parameter for modulating the resulting material properties. Here, we report that the edge states of twisted bilayer zigzag graphene nanoribbons (TBZGNRs) can be tuned with both the twist angle and the stacking offset. Strong edge state variations in the stacking region are first revealed by density functional theory (DFT) calculations. We construct and characterize twisted bilayer zigzag graphene nanoribbon (TBZGNR) systems on a Au(111) surface using scanning tunneling microscopy. A detailed analysis of three prototypical orthogonal TBZGNR junctions exhibiting different stacking offsets by means of scanning tunneling spectroscopy reveals emergent near-zero-energy states. From a comparison with DFT calculations, we conclude that the emergent edge states originate from the formation of flat bands whose energy and spin degeneracy are highly tunable with the stacking offset. Our work highlights fundamental differences between 2D and 1D twistronics and spurs further investigation of twisted one-dimensional systems.

cond-mat.mes-hall↗

Observation of magnetism induced topological edge state in antiferromagnetic topological insulator MnBi4Te7

Breaking time reversal symmetry in a topological insulator may lead to quantum anomalous Hall effect and axion insulator phase. MnBi4Te7 is a recently discovered antiferromagnetic topological insulator with TN ~12.5 K, which is constituted of alternatively stacked magnetic layer (MnBi2Te4) and non-magnetic layer (Bi2Te3). By means of scanning tunneling spectroscopy, we clearly observe the electronic state present at a step edge of a magnetic MnBi2Te4 layer but absent at non-magnetic Bi2Te3 layers at 4.5 K. Furthermore, we find that as the temperature rises above TN, the edge state vanishes, while the point defect induced state persists upon temperature increasing. These results confirm the observation of magnetism induced edge states. Our analysis based on an axion insulator theory reveals that the nontrivial topological nature of the observed edge state.

cond-mat.mtrl-sci↗

Quantum phase transition in magnetic nanographenes on a lead superconductor

Quantum spins, referred to the spin operator preserved by full SU(2) symmetry in the absence of the magnetic anistropy, have been proposed to host exotic interactions with superconductivity4. However, spin orbit coupling and crystal field splitting normally cause a significant magnetic anisotropy for d/f-shell spins on surfaces6,9, breaking SU(2) symmetry and fabricating the spins with Ising properties10. Recently, magnetic nanographenes have been proven to host intrinsic quantum magnetism due to their negligible spin orbital coupling and crystal field splitting. Here, we fabricate three atomically precise nanographenes with the same magnetic ground state of spin S=1/2 on Pb(111) through engineering sublattice imbalance in graphene honeycomb lattice. Scanning tunneling spectroscopy reveals the coexistence of magnetic bound states and Kondo screening in such hybridized system. Through engineering the magnetic exchange strength between the unpaired spin in nanographenes and cooper pairs, quantum phase transition from the singlet to the doublet state has been observed, in consistent with quantum models of spins on superconductors. Our work demonstrates delocalized graphene magnetism host highly tunable magnetic bound states with cooper pairs, which can be further developed to study the Majorana bound states and other rich quantum physics of low-dimensional quantum spins on superconductors.

cond-mat.mes-hall↗

Catalytic growth of ultralong graphene nanoribbons on insulating substrates

Graphene nanoribbons (GNRs) with widths of a few nanometres are promising candidates for future nano-electronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the direct growth of micrometre-long GNRs on insulating substrates, which is essential for the fabrication of nano-electronic devices, remains an immense challenge. Here, we report the epitaxial growth of GNRs on an insulating hexagonal boron nitride (h-BN) substrate through nanoparticle-catalysed chemical vapor deposition (CVD). Ultra-narrow GNRs with lengths of up to 10 μm are synthesized. Remarkably, the as-grown GNRs are crystallographically aligned with the h-BN substrate, forming one-dimensional (1D) moiré superlattices. Scanning tunnelling microscopy reveals an average width of 2 nm and a typical bandgap of ~1 eV for similar GNRs grown on conducting graphite substrates. Fully atomistic computational simulations support the experimental results and reveal a competition between the formation of GNRs and carbon nanotubes (CNTs) during the nucleation stage, and van der Waals sliding of the GNRs on the h-BN substrate throughout the growth stage. Our study provides a scalable, single-step method for growing micrometre-long narrow GNRs on insulating substrates, thus opening a route to explore the performance of high-quality GNR devices and the fundamental physics of 1D moiré superlattices.

cond-mat.mes-hall↗

Topological Defects Induced High-Spin Quartet State in Truxene-Based Molecular Graphenoids

Topological defects in graphene materials introduce exotic properties which are absent in their defect-free counterparts with both fundamental importance and technological implications. Although individual topological defects have been widely studied, collective magnetic behaviors originating from well-organized multiple topological defects remain a great challenge. Here, we studied the collective magnetic properties originating from three pentagon topological defects in truxene-based molecular graphenoids by using scanning tunneling microscopy and non-contact atomic force microscopy. Unpaired $π$ electrons are introduced into the aromatic topology of truxene molecular graphenoids one by one by dissociating hydrogen atoms at the pentagon defects via atom manipulation. Scanning tunneling spectroscopy measurements together with density functional theory calculations suggest that the unpaired electrons are ferromagnetically coupled, forming a collective high-spin quartet state of S=3/2. Our work demonstrates that the collective spin ordering can be realized through engineering regular patterned topological defects in molecular graphenoids, providing a new platform for designer one-dimensional ferromagnetic spin chains and two-dimensional ferromagnetic networks.

cond-mat.mes-hall↗

Coexistence of Ferroelectric-like Polarization and Dirac-like Surface State in TaNiTe5

By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), piezoresponse force microscopy (PFM) and first-principles calculations, we have studied the low-energy band structure, atomic structure and charge polarization on the surface of a topological semimetal candidate TaNiTe5. Dirac-like surface states were observed on the (010) surface by ARPES, consistent with the first-principles calculations. On the other hand, PFM reveals a switchable ferroelectric-like polarization on the same surface. We propose that the noncentrosymmetric surface reconstruction observed by STM could be the origin of the observed ferroelectric-like state in this novel material. Our findings provide a new platform with the coexistence of ferroelectric-like surface charge distribution and novel surface states.

cond-mat.mtrl-sci↗

Edge Disorder in Bottom-Up Zigzag Graphene Nanoribbons: Implications for Magnetism and Quantum Electronic Transport

We unveil the nature of the structural disorder in bottom-up zigzag graphene nanoribbons along with its effect on the magnetism and electronic transport on the basis of scanning probe microscopies and first-principles calculations. We find that edge-missing m-xylene units emerging during the cyclodehydrogenation step of the on-surface synthesis are the most common point defects. These "bite'' defects act as spin-1 paramagnetic centers, severely disrupt the conductance spectrum around the band extrema, and give rise to spin-polarized charge transport. We further show that the electronic conductance across graphene nanoribbons is more sensitive to "bite" defects forming at the zigzag edges than at the armchair ones. Our work establishes a comprehensive understanding of the low-energy electronic properties of disordered bottom-up graphene nanoribbons.

cond-mat.mtrl-sci↗

Braiding Majorana Zero Mode in An Electrically Controllable Way

To realize the braiding operations of Majorana zero mode in the vortex cores of a topological superconductor (TSC), a novel approach is proposed in this letter to replace the common tip (or tip-like) method. Instead of on top of the TSC thin film, arrays of electrically controllable pining centers are built beneath the film, hence detecting can proceed along with braiding. It does not only increase the braiding rate, but also enables the braiding to be performed in an electrically controllable way and to be integrated into large scale. Our work paves the way towards large-scale topological quantum computation.

cond-mat.other↗